Xiaogang Guo,Taotao Liang,Huisheng Huang,Binfang Yuan,Jing Wang
In 21st century, the microchip plays an essential role in data and information security, and preventing information leakage stored in chips becomes more challenging. This paper firstly introduced electrophoretic assembly technique and surface functionalization to design the C-doped nano-Al/Co 3 O 4 functional energetic material (nFEM) coating with triple stability of anti-wetting, micro-structure and energy-release for at least one year, and the energetic film was integrated with copper based-chip to construct the C-doped Al/Co 3 O 4 nFEM-chip to realize its self-destruction. Product shows outstanding anti-wetting properties with high water contact angle of 168 ± 1° and extremely low sliding angle of ∼ 1°, and well weather resistance in variable environments. Impressively, the output of heat (Q) of product can reach up to 3598 J/g nearly 85% of theoretical value with a relatively low activation energy of 235.46 kJ/mol, and keeps almost thermopositive stability even for immersed samples for fifty cycles after one year exposure test. In addition, C-doped Al/Co 3 O 4 nFEM-chip after immersion and exposure tests can also be effectively destroyed or ignited with a dazzling flame in an ultrashort time (<1ms), demonstrating the great advantage and huge application potentials for the design of other functional transient-chips with nano/micro-scale high-energy systems applied in different environments, even underwater.
Self-destructing chips have promising applications for securing data. This paper proposes a new concept of energetic diodes for the first time, which can be used for self-destructive chips. A simple two-step electrochemical deposition method is used to prepare ZnO/CuO/Al energetic diode, in which N-type ZnO and P-type CuO are constricted to a PN junction. This paper comprehensively discusses the material properties, morphology, semiconductor characteristics, and exploding performances of the energetic diode. Experimental results show that the energetic diode has typical rectification with a turn-on voltage of about 1.78 V and a reverse leakage current of about 3 × 10 −4 A. When a constant voltage of 70 V loads to the energetic diode in the forward direction for about 0.14 s or 55 V loads in the reverse direction for about 0.17 s, the loaded power can excite the energetic diode exploding and the current rises to about 100 A. Due to the unique performance of the energetic diode, it has a double function of rectification and explosion. The energetic diode can be used as a logic element in the normal chip to complete the regular operation, and it can release energy to destroy the chip accurately.
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