JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2016
·Vol. 27
·期 8
·8094-8099
·
IF 1.798
Cao Renping,Peng Dedong,Fu Ting,Luo Zhiyang,Zhou Shenlin,Jiang Shenhua,Fu Jingwei
KSrVO 4 :Eu 3+ phosphors are synthesized by solid-state reaction method in air. Host KSrVO 4 under excitation at 345 nm emits green–yellow light with the CIE chromaticity coordinates (0.3466, 0.4425), and its broad emission band peaking at ~545 nm covers the range 400–750 nm due to 3 T 1,2 → 1 A 1 transitions in [VO 4 ] 3− group. KSrVO 4 :Eu 3+ phosphor under excitation at 315 and 394 nm shows red emission with the CIE chromaticity coordinates (0.6279, 0.3717), and the emission spectra in the range of 560–750 nm contains four narrow emission bands owing to 5 D 0 → 7 F
J
( J = 1, 2, 3, and 4) transitions of Eu 3+ ion, respectively. The optimal Eu 3+ doping concentration is ~4 mol%. The lifetime decreases from 0.991 to 0.893 ms with increasing Eu 3+ concentration within the range 0.5–6 mol%. The possible luminous mechanism is analyzed by the simplified energy level diagrams of VO 4
3− group and Eu 3+ ion, and energy transfer process in KSrVO 4 :Eu 3+ phosphor. The experimental results indicate that KSrVO 4 :Eu 3+ phosphor will be possible to be used as red phosphor candidate for white light-emitting diode (LED) based on ultraviolet (~315 nm) and near ultraviolet (~395 nm) LED chips.
研究领域:
材料科学
·
光学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2021
·
IF 5.316
Shichang Xu,Yanjie Zhang,Xiuping Wu,Jinlong Wang,Bing Li,Jingjie Yu
The red@green core-shell emitting phosphor with monodisperse luminescence center was successfully constructed by Eu 2+ doped Sr 2 Si 5 N 8 and Sr 2 Si 5 N 8 @SrSi 2 O 2 N 2 via a deposition-precipitation (DP) method. Compared to traditional solid state reaction (SSR) method, under excitation at 370 nm, Sr 2 Si 5 N 8 :0.05Eu 2+ phosphor prepared by DP method exhibits red emission at 611 nm and an ~1.4-fold luminescent intensity enhancement. Interestingly, upon near-ultraviolet (NUV) excitation, Eu 2+ doped Sr 2 Si 5 N 8 @SrSi 2 O 2 N 2 phosphors prepared by DP method exhibit a dual emission feature with the green emission at 538 nm and red emission peak at 611 nm. The elemental line scanning spectrum of the energy dispersive X-ray analysis indicates a core@shell structure of Sr 2 Si 5 N 8 @SrSi 2 O 2 N 2 . Furthermore, this red@green core-shell emitting phosphor can be encapsulated in ultra-low melting Sn-F-P-O glass to achieve the white light with excellent color quality Ra = 85) and low correlated color temperature (4484 K) when pumped by near ultraviolet LED chips.
研究领域:
材料科学
·
光学工程
✓ 已验证
产品关联
DOI
高影响因子
MATERIALS RESEARCH BULLETIN
·
2022
·
IF 5.6
Renping Cao,Zhiyi Huang,Bang Lan,Lan Li,Xuehua Yi,Zhiyang Luo,Chenxing Liao,Jing Wang
Ca 3 Zn 3 Te 2 O 12 :Bi 3+ , Ca 3 Zn 3 Te 2 O 12 :Eu 3+ , Ca 3 Zn 3 Te 2 O 12 :Eu 3+ /Bi 3+ are prepared successfully in air. The crystal phase, microscopic image, and optical properties of samples are investigated by the X-ray difractometer, scanning electron microscopy, and edinburgh steady-state FLS 980 spectrograph. The green emission of Ca 3 Zn 3 Te 2 O 12 :Bi 3+ phosphor with excitation at 314 nm is observed and its broad emission spectrum in the range of 360 - 790 nm is attributed to the 3 P 1 → 1 S 0 transition of Bi 3+ ion. Under excitation at 395 nm, the red emission of Ca 3 Zn 3 Te 2 O 12 :Eu 3+ is found, the chromaticity coordinates are (0.6392, 0.3605), and its PL spectrum is in the rang of 575 - 750 nm because of the 5 D 0 → 7 F 0 , 7 F 1 , 7 F 2 , 7 F 3 , and 7 F 4 transations of Eu 3+ ion. The doping Bi 3+ ion can affect the luminescence properties of Ca 3 Zn 3 Te 2 O 12 :Eu 3+ phosphor. The adjustable color light from green to yellow of Ca 3 Zn 3 Te 2 O 12 :Eu 3+ , Bi 3+ phosphor with excitation at 314 nm is revealed when Eu 3+ concentration is changed from 0 to 12 mol%. When the excitation wavelength is 395 nm, Ca 3 Zn 3 Te 2 O 12 :Eu 3+ , Bi 3+ phosphor only emits red light with emission spectrum in the rang of 575 - 750 nm. The energy level diagrams of Eu 3+ and Bi 3+ in Ca 3 Zn 3 Te 2 O 12 :Eu 3+ , Bi 3+ are drawn, which is used to analyze the luminous mechanism of samples.
研究领域:
材料科学
·
光学
✓ 已验证
产品关联
DOI
高影响因子
Materials Today Chemistry
·
2024
·
IF 6.7
Chengliang Lyu,Dashuai Sun,Zeyu Lyu,Sida Shen,Pengcheng Luo,Zhihang Yue,Zheng Lu,Luhui Zhou,Hongpeng You
Near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) light sources have great potential for applications in information encryption , night vision, and non-destructive testing. However, designing efficient NIR phosphors with wide emission band remains a significant challenge. Here, we report a garnet-type NIR phosphor Gd 2 Mg 3 Ge 3 O 12 :Cr 3+ ,Yb 3+ (GMG:Cr 3+ ,Yb 3+ ). The GMG:0.06Cr 3+ phosphor shows a broadband emission peaking at 828 nm under 450 nm excitation, with a full width at half maximum (FWHM) of 188 nm. When Yb 3+ ions are introduced to construct Cr 3+ -Yb 3+ energy transfer, the obtained GMG:Cr 3+ ,Yb 3+ phosphor displays further widened emission band with a FWHM of 272 nm. Moreover, GMG:Cr 3+ ,Yb 3+ phosphor and commercial blue LED chips are combined to create NIR pc-LEDs, which have a photoelectric efficiency of 5.76% @ 100 mA and a maximum NIR output power of 17.21 mW @ 100 mA, demonstrating its potential applications in night vision, non-destructive testing, and information encryption.
研究领域:
材料科学
·
光电子学
·
固态照明
·
光子学
✓ 已验证
DOI
高影响因子
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
·
2024
·Vol. 130
·期 4
·1-9
·
IF 2.5
Qian Di,Jin Yahong,Li Yanmei,Wu Haoyi,Hu Yihua
Phosphor-converted light-emitting diodes (pc-LEDs) with broadband near-infrared (NIR) emissions have garnered significant research interest. Their performance is primarily determined by the type of NIR phosphor used. Herein, a broadband NIR-emitting phosphor, Y 3 Sc 2 Al 3 O 12 :Cr 3+ , is synthesized. The blue-light excitation of the Y 3 Sc 2 Al 3 O 12 :Cr 3+ phosphor produces a broadband emission spectrum ranging from 640 to 1000 nm with a full width at half maximum (FWHM) of 113 nm. The NIR emission intensity maintains approximately 50% of the initial room-temperature intensity at 423 K. The structure–property relationship is also comprehensively studied. Encapsulating the as-obtained NIR phosphor into prototype pc-LEDs produces an NIR output power of 58.1 mW at a 1230 mA driving current and a photoelectric conversion efficiency of 3.5% at 30 mA. Finally, night-vision applications are implemented using the as-fabricated pc-NIR-LEDs device.
研究领域:
材料科学
·
光电子学
·
固态照明
·
红外技术
·
荧光粉化学
✓ 已验证
DOI
高影响因子
JOURNAL OF LUMINESCENCE
·
2023
·
IF 3.6
Xidong Wang,Li Xu,Luhan Wang,Shuyang Bao,Yu Wang,Qianxiong Wen,Yanrong Liang,Zhaopin Chen,Xiaoli Fang,Weidong Xiang
As an inorganic color conversion material, phosphor-in-glass film (PiF) has received extensive attention in the sphere of laser-driven white lighting due to its excellent integrated performance. The yellow-emitting phosphor La 3 Si 6 N 11 :Ce has excellent thermal stability and wide emission band, which makes it more competitive than Y 3 Al 5 O 12 :Ce in laser-driven white lighting. Herein, we embedded La 3 Si 6 N 11 :Ce phosphor powder in a silicate glass matrix (SiO 2 –B 2 O 3 –CaO–Na 2 O) and sintered it on a sapphire substrate. In the silica-rich glass system, the network structure of silica-oxygen tetrahedral glass is more rigid and the thermal erosion of the phosphor by the silica-based glass is less, which makes the phosphor maintain better performance after low-temperature co-sintering. The quantum efficiency in the optimized LSN phosphor-in-glass film (LSN PiF) is up to 81 %, and the thermal conductivity is 10.2 Wm −1 K −1 , showing good thermal stability. Impressively, the LSN PiF produces a bright near-white light (0.3323,0.346) at a blue laser of 5.6 W, with corresponding luminous efficiency up to 195 lm/W. Moreover, LSN PiF can maintain about 80 % of the initial luminous intensity after continuous lighting for 24 h at the incident power of 3.5 W. These outstanding properties can advance the development of LSN phosphors in high power laser lighting applications.
研究领域:
材料科学
·
光学
·
光子学
·
照明技术
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2015
·Vol. 26
·期 9
·6776-6780
·
IF 1.569
Cao Renping,Xu Haidong,Peng Dedong,Gou Qingdong,Zhou Shenlin,Liu Pan,Yu Xiaoguang
BaWO 4 :Sm 3+ , Mo 6+ /K + phosphors are synthesized by a high temperature solid-state reaction method in air. The very strong emission bands peaking at ~600 and 644 nm and the strongest excitation band peaking at ~403 nm are assigned to the 4 G 5/2 → 6 H J (J = 7/2 and 9/2) and 6 H 5 / 2 → 4 F 7 / 2 transitions of Sm 3+ ion, respectively. The optimal Sm 3+ doping concentration is ~5 mol%. Emission intensity of BaWO 4 :Sm 3+ phosphor is increased more than twice owing to charge compensation when the K + ion is codoped as charge compensator, however, Mo 6+ ions is small influence to its emission intensity. The energy transfers and luminous mechanism are explained by using energy level diagrams of WO 4
2− group and Sm 3+ ion. Lifetimes of Ba 0.925 WO 4 :0.05Sm 3+ , Ba 0.925 W 0.9 Mo 0.1 O 4 :0.05Sm 3+ , and Ba 0.9 K 0.05 WO 4 :0.05Sm 3+ phosphors with excitation 403 nm are about 0.933, 0.882, and 0.693 ms, respectively. The experiment results indicate that BaWO 4 :Sm 3+ , Mo 6+ /K + phosphors will be a potential red phosphor candidate for white LEDs based on near UV (~403 nm) LED chip and research contents are useful to improve luminescence properties of Sm 3+ -doped phosphors.
研究领域:
材料科学
·
光学
✓ 已验证
产品关联
DOI
高影响因子
Applied Sciences-Basel
·
2015
·Vol. 5
·期 4
·1494-1502
·
IF 1.484
Wangqing Shen,Yiwen Zhu,Zhengling Wang
Sr4Si3O8Cl4co-doped with Eu2+, Bi3+were prepared by the high temperature reaction. The structure and luminescent properties of Sr4Si3O8Cl4:Eu2+, Bi3+were investigated. With the introduction of Bi3+, luminescent properties of these phosphors have been optimized. Compared with Sr3.90Si3O8Cl4:0.10Eu2+, the blue-green phosphor Sr3.50Si3O8Cl4:0.10Eu2+, 0.40Bi3+shows stronger blue-green emission with broader excitation in near-UV range. Bright blue-green light from the LED means this phosphor can be observed by the naked eye. Hence, it may have an application in near UV LED chips.Keywords:luminescent properties;phosphors;light-emitting diodes;Sr4Si3O8Cl4
研究领域:
材料科学
·
光学工程
✓ 已验证
产品关联
DOI
高影响因子
INORGANIC CHEMISTRY COMMUNICATIONS
·
2023
·
IF 3.8
Chunkai Wang,Ruirui Cui,Jun Zhang,Chaoyong Deng
In this study, a Ba 3 MgTa 2 O 9 : x Sm 3+ orange-red phosphor was synthesized by a high-temperature solid-phase reaction method, and its fluorescence properties were analyzed. The Ba 3 MgTa 2 O 9 : x Sm 3+ phosphor exhibited three emission peaks at 561 nm ( 4 G 5/2 → 6 H 5/2 ), 595 nm ( 4 G 5/2 → 6 H 7/2 ), and 642 nm ( 4 G 5/2 → 6 H 9/2 ) under the excitation of 407 nm. The Ba 3 MgTa 2 O 9 :0.05Sm 3+ phosphor had good thermal stability and excellent color stability at different temperatures. Ba 3 MgTa 2 O 9 :0.05Sm 3+ phosphor is the best doping concentration phosphor, with a high color purity of 98.52 %. The XRD of the Sm 3+ ion-doped phosphor showed that its crystal structure and morphology were stable, and the doping of Sm 3+ ions did not affect its crystal structure significantly. Therefore, the Sm 3+ ion-doped phosphors in this study have potential applications and are expected to be used in the field of WLED.
研究领域:
材料科学
·
光学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2021
·
IF 5.316
Pu Fan,Zefeng Xu,Qi Luo,Zongjie He,Yuhui Chen,Qiqi Miao,Cong Huang,Xiaoguang Liu,Ling Li
Phosphor-converted white LEDs are realized by combining blue InGaN chips with yellow and red emitting materials. Due to the lack of efficient red phosphor materials, we can design a broadband yellow phosphor material containing as many red components as possible. We found an abnormal broadband yellow-emitting Ba 2 CaB 2 Si 4 O 14 :Eu 2+ borosilicate phosphor inspired by natural minerals, which has been synthesized by traditional high temperature solid-state method. The structural information and photoluminescence characteristics of Ba 2 CaB 2 Si 4 O 14 :Eu 2+ were characterized in detail, and applied to the fabrication of white LED devices. Excited by near ultraviolet light at 365 nm, it displays a wide emission band from 400 to 800 nm centered on the 595 nm peak. White LED devices were fabricated by physically mixing the yellow phosphor Ba 2 CaB 2 Si 4 O 14 :Eu 2+ and synthesized blue phosphor BaMgAl 10 O 17 :Eu 2+ with 365 nm UV chip as excitation. The correlation color temperature (CCT) value and the chromaticity coordinates of the fabricated WLED devices were found to be 5522 K and (0.3293, 0.3036) respectively. In conclusion, Ba 2 CaB 2 Si 4 O 14 :Eu 2+ has great potential in the preparation of near UV excited white LEDs.
研究领域:
材料科学
·
光电技术
·
光子学
✓ 已验证
DOI
高影响因子
Advanced Optical Materials
·
2025
·
IF 7.2
Yimin Zhou,Fei Tang,Chenyang Li,Xinzhe Fang,Xuan Li,Jia Xiao,Guowei Du,Shijie Xu
The substrate-free ultrathin phosphor-glass composite (PGC) provides significant advantages for all-inorganic light-emitting diodes (LEDs), offering enhanced resistance to light radiation and chemical corrosion. However, achieving a PGC thickness below 100 µm remains challenging due to its brittle nature. Herein, this work presents a novel strategy to fabricate an ultrathin cyan PGC for all-inorganic LEDs, based on our home-synthesized Ce-activated Ca 2 YAlGa 2 Si 2 O 12 phosphor (CYAGS:Ce). The phosphor emits bright cyan light centered at λ em 497 nm with a FWHM of 93 nm and an internal quantum yield (IQY) greater than 60%. The luminescence mechanism, including concentration and thermal quenching, is investigated in detail. Using tape-casting and low-temperature co-firing, an ultrathin PGC with a thickness of 98 µm is achieved. Structural and luminescence properties are compared to highlight the glass matrix's influence. Furthermore, based on as-prepared ultrathin PGCs, a compact LEDs with a low correlated color temperature (CCT, 3384 K) and high color-rendering index (CRI, R a = 85.7) is obtained by integrating both red and cyan PGCs with a commercial 420 nm blue chip. This work advances the understanding of CYAGS:Ce cyan phosphor and provides a versatile strategy for fabricating ultrathin PGCs, highlighting their potential applications in all-inorganic LED lighting.
研究领域:
材料科学
·
光电子学
·
固态照明
·
无机化学
✓ 已验证
产品关联
DOI
高影响因子
INORGANIC CHEMISTRY
·
2020
·
IF 4.825
Peipei Dang,Dongjie Liu,Yi Wei,Guogang Li,Hongzhou Lian,Mengmeng Shang,Jun Lin
Phosphor-converted white-light-emitting diodes (pc-WLEDs) rely on combining a near-ultraviolet (n-UV) or blue chip with trichromatic and yellow-emitting phosphors. It is challenging to discover cyan-green-emitting (480–520 nm) phosphors for compensating the spectral gap and producing full-spectrum white light. In this work, we successfully discovered two unprecedented bright cyan-green emitting Rb3RV2O8 (R = Y, Lu) phosphors that gives emission bands centered at 500 nm upon 362 nm n-UV light excitation. Interestingly, the both self-activated compounds exhibit high internal quantum efficiencies (IQEs) of 71% for Rb3YV2O8 and 85% for Rb3LuV2O8, respectively. Moreover, controllable emission color can be successfully tuned from cyan-green to orange-red across the warm white light region by design strategy of VO43– → Eu3+ energy transfer. The thermal quenching of as-prepared phosphors could be effectively mitigated by this design strategy. Finally, the as-fabricated n-UV (λex = 370 nm) pumped phosphor-converted (pc) W-LED devices utilizing Rb3RV2O8 (R = Y, Lu) along with commercial phosphors demonstrate well-distributed warm white light with high color-rendering index (CRI) of 91.9 and 93.5, and a low correlated color temperature (CCT) of 5095 and 4946 K. It suggests that the both vanadate phosphors have potential applications in full-spectrum pc-WLEDs.
研究领域:
材料科学
·
光电子学
·
固态照明
·
无机化学
·
光子学
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）