JOURNAL OF ALLOYS AND COMPOUNDS
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2025
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IF 6.3
Mengchun Zhu,Shengyi Yang,Guanzhen Zou,Haiyuan Xin,Zhenhua Ge,Ying Wang,Bingsuo Zou,Yurong Jiang
As a promising material, lead selenide (PbSe) colloidal quantum dots (CQDs) are widely studied for its applications in the next generation photodetectors due to their solution-processability and low cost. However, the (100) surfaces PbSe QDs are usually passivated incompletely by the traditional liquid-phase ligand exchange with the halogen ligands when the diameter of PbSe QDs is larger than 5.0 nm. As compared to the traditional strategies of the halogen ligands, in this work methylammonium acetate (MAAc) was added as an additive into the PbI 2 ligand solution to form the perovskite intermediate (i.e. MAPbI 3-x Ac x ) as the ligand attached onto the (100) face of PbSe, in this way, to enhance the surface passivation and the dispersion of PbSe CQDs. Therefore, the as-synthesized infrared photodetector ITO/ZnO/PbSe-MAPbI 3-x Ac x /Ag showed decreased dark current by more than five-fold, and thus its device performance is enhanced greatly. As a result, a high photoresponsivity of 0.32 mA/W with a specific detectivity of 1.16 × 10 11 Jones was obtained from the photodetector ITO/ZnO/PbSe-MAPbI 3-x Ac x /Ag under 47.8 µW/cm 2 1550 nm illumination. Thus, it provides a supplemental solution to completely surface-passivate CQDs in large size for next generation optoelectronics.
研究领域:
材料科学
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光电技术
✓ 已验证
产品关联
DOI
高影响因子
Small
·
2022
·Vol. 18
·期 48
·2205356
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IF 15.153
Mohan Yuan,Huicheng Hu,Ya Wang,Hang Xia,Xingchen Zhang,Binbin Wang,Ziyang He,Mengxuan Yu,Yun Tan,Zhaorong Shi,Kanghua Li,Xuke Yang,Ji Yang,Mingyu Li,Xiao Chen,Liuyong Hu,Xiang Peng,Jungang He,Chao Chen,Xinzheng Lan,Jiang Tang
Lead selenide (PbSe) colloidal quantum dots (CQDs) are promising candidates for optoelectronic applications. To date, PbSe CQDs capped by halide ligands exhibit improved stability and solar cells using these CQDs as active layers have reported a remarkable power conversion efficiency (PCE) up to 10%. However, PbSe CQDs are more prone to oxidation, requiring delicate control over their processability and compromising their applications. Herein, an efficient strategy that addresses this issue by an in situ cation-exchange process is reported. This is achieved by a two-phase ligand exchange process where PbI 2 serves as both a passivating ligand and cation-source inducing transformation of CdSe to PbSe. The defect density and carrier lifetime of PbSe CQD films are improved to 1.05 × 10 16 cm −3 and 12.2 ns, whereas the traditional PbSe CQD films possess 1.9 × 10 16 cm −3 defect density and 10.2 ns carrier lifetime. These improvements are translated into an enhancement of photovoltaic performance of PbSe solar cells, with a PCE of up to 11.6%, ≈10% higher than the previous record. Notably, the approach enables greatly improved stability and a two-month stability is successfully demonstrated. This strategy is expected to promote the fast development of PbSe CQD applications in low-cost and high-performance optoelectronic devices.
研究领域:
材料科学
·
光电子学
✓ 已验证
DOI
PubMed
高影响因子
ADVANCED MATERIALS
·
2025
·
IF 26.8
Yifan Chen,Qi Wei,Shuixian Yang,Tao Zhang,Hongfei Chen,Zhihao Fu,Chao Lu,Zhengyong Liu,Yanxiong Wu,Jingshun Pan,Mingjie Li,Zhaohui Li
The mid-infrared focal plane array (FPA) imager has developed over recent decades to become multifunctional, powerful, reliable, miniaturized, and cost-effective. However, the complexity of the refrigerated packaging process (such as dewar flask) and traditional fabrication technology (such as flip-chip) continues to contribute significantly to the high cost of industrial production. Here, a simple, low-cost, and effective type of uncooled mid-infrared FPA imager is reported through the monolithic integration of mid-infrared Pb 1-x Sn x Se nanocrystals (NCs) PIN heterojunction (PbS/Pb 1-x Sn x Se/ZnO) photodetectors and glass-based readout integrated circuits (ROICs). Sn-doping in PbSe NCs not only weakens the internal photocarrier-phonon coupling to reduce thermal noise but also optimizes the energy band structure of the heterojunction to enhance mid-infrared performance. Finally, the PbS/Pb 0.86 Sn 0.14 Se/ZnO heterojunction photodetector demonstrates a dark current (2.7 x 10 −7 A mm −2 at −0.5 V), a detectivity of 7.46 × 10 9 Jones at a peak wavelength of 4.25 µm, air stability (retaining 96.7% performance at 300 K for 360 days) and the corresponding uncooled mid-infrared FPA (64 × 64 pixels) achieves excellent thermal sensitivity of 133 mK. These results underscore the substantial potential applications of mid-infrared FPA based on the heterojunction, including spectral imaging, gas leak detection, and chemical reagent identification.
研究领域:
光电子学
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纳米技术
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红外成像
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半导体器件
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材料科学
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传感器技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）