JOURNAL OF ALLOYS AND COMPOUNDS
·
2021
·
IF 5.316
Xinhong Zhao,Kai Li,Yongchu Fang,Yu Tao,Xiaoxian Song,Haiting Zhang,Huaqing Yu,Zaoxue Yan
Flexible photodetectors based on vertically stacked PEDOT:PSS/PbS/CsPbCl 3 were prepared by a simple low temperature spin-coating method. Due to the synergistic effect, the flexible PEDOT:PSS/PbS/CsPbCl 3 photodetectors exhibited a high responsivity of 6.67 A/W and detectivity of 5.78 × 10 10 Jones under a relatively low external bias. The photocurrent of a series of continuous-bending shown that the flexible PEDOT:PSS/PbS/CsPbCl 3 photodetectors had excellet photocurrent stability and reproducibility. The results indicate that the vertically stacked PEDOT:PSS/PbS/CsPbCl 3 architecture has great potential in wearable and portable low-voltage optoelectronic devices.
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
2D Materials
·
2024
·Vol. 11
·期 2
·025024
·
IF 4.5
Bo Zhang,Yunjie Liu,Bing Hu,Fuhai Guo,Mingcong Zhang,Siqi Li,Weizhuo Yu,Lanzhong Hao
Due to its large absorption coefficient and high carrier mobility, SnS exhibits strong promise in the area of optoelectronic devices. Nevertheless, the fabrication of large-area, high-quality films for SnS photodetectors (PDs) with superior photoresponse remains a formidable task, seriously limiting its further practical application. In the present study, we report a superior-performance broadband PD founded on the epitaxial SnS film. Large-area uniform SnS films were grown epitaxially on (100)-oriented KBr using magnetron sputtering technique, further exfoliated, and transferred in a wafer size to fabricated two-ends PD devices. Benefitting from high crystallization and unique photoconductive-bolometric coupling effect, the two modes of operation exhibit a wide range of spectral responses from the visible to near-infrared wavelength (405–1920 nm). Particularly noteworthy is the SnS device fabricated, which demonstrates an impressive responsivity of 95.5 A W−1 and a detectivity of 7.8 × 1011 Jones, outperforming other devices by 1–2 orders of magnitude. In addition, SnS PD shows excellent environmental durability. This work provides a robust approach to develop high-performance broadband SnS PDs, while simultaneously offering deep insight into the light–matter interactions.
研究领域:
材料科学
·
光学工程
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
Nanomaterials
·
2023
·Vol. 13
·期 13
·1996
·
IF 5.3
Mutan Luo,Run Chen,Zhaowei Zhu,Chuantong Cheng,Xin Ning,Beiju Huang
A high-efficiency photodetector consisting of colloidal PbS quantum dots (QDs) and single-layer graphene was prepared in this research. In the early stage, PbS QDs were synthesized and characterized, and the results showed that the product conformed with the characteristics of high-quality PbS QDs. Afterwards, the photodetector was derived through steps, including the photolithography and etching of indium tin oxide (ITO) electrodes and the graphene active region, as well as the spin coating and ligand substitution of the PbS QDs. After application testing, the photodetector, which was prepared in this research, exhibited outstanding properties. Under visible and near-infrared light, the highest responsivities were up to 202 A/W and 183 mA/W, respectively, and the highest detectivities were up to 2.24 × 1011Jones and 2.47 × 108Jones, respectively, with light densities of 0.56 mW/cm2and 1.22 W/cm2, respectively. In addition to these results, the response of the device and the rise and fall times for the on/off illumination cycles showed its superior performance, and the fastest response times were approximately 0.03 s and 1.0 s for the rise and fall times, respectively. All the results illustrated that the photodetector based on PbS and graphene, which was prepared in this research, possesses the potential to be applied in reality.Keywords:PbS quantum dots;graphene;indium tin oxide;photodetector;high responsivity and detectivity
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
NANOTECHNOLOGY
·
2021
·Vol. 32
·期 22
·225204
·
IF 3.874
Yali Liu,Xiaoxiang Wu,Wenxuan Guo,Mengge Li,Xinyue Niu,Jiadong Yao,Ying Yu,Boran Xing,Xiaoyuan Yan,Shucheng Zhang,Jian Sha,Yewu Wang
Heterojunction integrated by two-dimensional/three-dimensional materials has shown great potential applications in optoelectronic devices because of its fast response speed, high specific detectivity and broad spectral response. In this work, the vertical n-Si/p-GaTe heterojunction has been designed and fabricated, which shows a high responsivity up to 5.73 A W−1 and a fast response time of 20 μs at zero bias benifitting from the high efficiency of light absorption, internal photocurrent gain and strong built-in electrical field. A specific detectivity of 1012 Jones and a broad spectral response ranging from 300 to 1100 nm can also be achieved. This work provides an alternative strategy for high-performance self-powered optoelectronic devices.
研究领域:
光电技术
·
材料科学
·
半导体器件
✓ 已验证
DOI
高影响因子
IEEE TRANSACTIONS ON ELECTRON DEVICES
·
2023
·Vol. 70
·期 8
·4251-4256
·
IF 3.1
Biao He,Yongkai Jing,Xinfa Zhu,Chao Fan,Chun Sun,Yonghui Zhang,Mengjun Wang,Hongxing Zheng,Erping Li
In this work, light detectors utilizing p-type tin monosulfide (p-SnS) few layers with an Au/SnS/Ag Schottky structure are demonstrated. These detectors exhibit broad-spectrum light detection capabilities spanning the visible to near-infrared (NIR) wavelength range. Notably, under NIR 850 nm illumination, the detectors exhibit exceptional photodetection performance with an ultrahigh responsivity of up to 1652.87 $\text{A}\cdot \text{W}^{-{1}}$ , an extremely specific detectivity of $8.05\times 10^{{12}}$ cm $\cdot $ Hz $^{\text {1/{2}}}\cdot \text{W}^{-{1}}$ , and a rapid response time of approximately 6.5 ms. These characteristics surpass those of most 2-D materials-based detectors and even outperform commercial InGaAs (Hamamatsu, InGaAs G8370-85) and Silicon (Hamamatsu, Si S9119-01) detectors. The remarkable photoresponse is attributed to the SnS/Ag Schottky structure, which facilitates the separation of excited electron–hole pairs. Our findings suggest a promising route for developing high-performance optoelectronics based on p-SnS.
研究领域:
光电子学
·
半导体物理
·
纳米材料科学
·
器件物理
·
光学工程
✓ 已验证
DOI
高影响因子
Advanced Electronic Materials
·
2018
·Vol. 4
·期 7
·1800154
·
IF 5.466
Qiu Li,Aixiang Wei,Jianting Lu,Lili Tao,Yibin Yang,Dongxiang Luo,Jun Liu,Ye Xiao,Yu Zhao,Jingbo Li
Layered 2D semiconductors, such as graphene and transition-metal dichalcogenides (TMDs), are receiving intensive attention owing to their great performance in electronic and optoelectronic application during the past few years. Among them, SnS has similar anisotropy to black phosphorus and high photoresponse in the near infrared range, rendering it as an ideal candidate for infrared photodetectors. In this work, large-size (up to 330 µm) and high-quality single-crystalline SnS nanoplates are synthesized successfully via controlled chemical vapor deposition technique and characterized by field-emission scanning electron microscopy, X-ray diffraction, confocal Raman system, atomic force microscope, transmission electron microscopy, and photoluminescence spectroscopy. Photodetectors based on as-grown SnS nanoplates are fabricated with back-gated field effect transistors (FETs) configuration, exhibiting a high mobility of 17.1 cm 2 V −1 s −1 . Photodetectors based on the SnS FETs demonstrate excellent optoelectronic performance both in visible and near-infrared spectral range. Typically, photoresponsivity of 197.7 A W −1 , photoresponse time of 39 ms, and external quantum efficiency of 6.06 × 10 4 % are exhibited under the irradiation of 405 nm laser. The wide response range and ultrahigh sensitivity make the large-area single crystal SnS nanoplate a promising candidate for future application in optoelectronics.
研究领域:
材料科学
·
纳米科技
·
半导体物理
·
光电子学
·
凝聚态物理
✓ 已验证
DOI
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2020
·
IF 6.984
Shusheng Pan,Ziyue Rao,Yujie Wu,Zhiyu Liu,Jun Ge,Shan Zhang
In this study, a temperature self-regulating solar reactor based on VO 2 thermochromic coating is demonstrated. The temperature of solar reactor can be stabilized at 68.8 °C, which is corresponded to the critical point of metal-to-insulator transition of VO 2 . By employing the solar reactor, the orthorhombic phase CsPbI 3 microwires have been synthesized through solution phase reaction route. Strong emission peaks at 490 nm and 470 nm have been observed in CsPbI 3 microwires under ultraviolet and soft X-ray excitation, respectively. The high performance photodetector based on CsPbI 3 microwire show a detectivity of 1.09 × 10 14 Jones, responsivity of 4.72 A/W, rapid rise and decay time of 0.96 and 0.93 s at 325 nm. Our results demonstrate that the temperature self-regulating solar reactor can be applied for energy-saving solution phase reactor for synthesizing high quality inorganic materials.
研究领域:
材料科学
·
纳米光电子学
·
无机功能材料
·
能源材料
·
半导体器件
✓ 已验证
DOI
高影响因子
Small
·
2017
·Vol. 13
·期 25
·1700364
·
IF 8.643
Xuhai Liu,Dejian Yu,Fei Cao,Xiaoming Li,Jianping Ji,Jun Chen,Xiufeng Song,Haibo Zeng
All-inorganic photodetectors based on scattered CsPbBr 3 nanoplatelets with lateral dimension as large as 10 µm are fabricated, and the CsPbBr 3 nanoplatelets are solution processed governed by a newly developed ion-exchange soldering mechanism. Under illumination of a 442 nm laser, the photoresponsivity of photodetectors based on these scattered CsPbBr 3 nanoplatelets is as high as 34 A W −1 , which is the largest value reported from all-inorganic perovskite photodetectors with an external driven voltage as small as 1.5 V. Moreover, the rise and fall times are 0.6 and 0.9 ms, respectively, which are comparable to most of the state-of-the-art all-inorganic perovskite-based photodetectors. All the material synthesis and device characterization are conducted at room temperature in ambient air. This work demonstrates that the solution-processed large CsPbBr 3 nanoplatelets are attractive candidates to be applied in low-voltage, low-cost, ultra highly integrated optoelectronic devices.
研究领域:
材料科学
·
光电子学
·
纳米科技
·
半导体器件
·
凝聚态物理
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2020
·
IF 4.65
Fa Cao,Ling Jin,Yong Wu,Xiaohong Ji
Self-powered Ultraviolet (UV) photodetectors (PDs) have attracted great attention due to their outstanding performance. Herein, we report the successful fabrication of self-powered UV PDs based on ZnO/CuI/Au heterojunction . An ultra-high on/off ratio of 4250 and fast rise/decay times of 0.41/0.08 s have been demonstrated from the ZnO/CuI/Au PD. Moreover, the PD exhibits a high responsivity of 61.5 mA/W and detectivity of 1.7 × 10 10 Jones. The device displays long-term cyclic stability with 98.9% retention after 1000 cycles continuous test and superior environmental stability with 97.1% retention tested after 6 months. The synergistic effects of plasmonic Au nanoparticles and ZnO/CuI pn heterostructure play important roles in the enhancement of the photodetect ability. The concept of employing plasmonic Au nanoparticles onto the heterostructure indicates huge potential in achieving self-powered UV PDs for practical applications.
研究领域:
材料科学
·
光电子学
·
纳米技术
·
半导体物理
·
器件工程
✓ 已验证
DOI
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2025
·
IF 13.2
Runchao Dong,Bartosz Orwat,Beata Luszczynska,Jia Zhang,Hongxin Yin,Genqiang Liu,Weijun Li,Dongdong Zhang,Zhentao Du,Weiyou Yang,Huan He,Fengmei Gao,Shanliang Chen
Controlling the interface properties and surface carrier dynamics of nanostructured semiconductors is crucial for enhancing the electrical and optical performance of photoelectrochemical (PEC) photodetectors (PDs). Herein, a novel self-powered PEC ultraviolet (UV) PD applicable to harsh underwater environments is developed based on integrated self-supporting SiC/GaN heterojunction nanowire arrays. Whole single-crystal integrated self-supporting SiC nanoarrays are encapsulated by high-quality GaN films via two-step anodization and high-temperature nitridation processes. The optimized heterojunction nanoarrays PEC UV PD with 40 min nitridation duration (SiC/GaN-40) demonstrates outstanding photodetection capabilities with high responsivity ( R λ , 698 mA/W), excellent detectivity ( D ⁎ , 1.66 × 10 11 Jones), remarkable external quantum efficiency ( EQE , 231.2 %), and rapid rise/decay times ( τ r / τ d , 127.93/214.92 ms) under 375-nm light illumination at 0.6 V bias voltage. Moreover, the SiC/GaN-40 device demonstrates excellent self-powered performance, achieving exceptional R λ , D ⁎ , EQE, and τ r / τ d , of 588.24 mA/W, 9.3 × 10 10 Jones, 194.9 %, and 160/199 ms, respectively. Furthermore, the device exhibits excellent long-term operational and aging stability even under harsh underwater environments, such as pH-universal and wide-temperature solutions. This study provides a valuable reference for exploring high-responsivity and reliable PEC PDs suitable for harsh underwater optical communication, thus advancing the heterojunction and interfacial engineering strategies for next-generation optoelectronics.
✓ 已验证
产品关联
DOI
高影响因子
ADVANCED MATERIALS
·
2025
·
IF 26.8
Yingjie Zhao,Jiaming Hu,Zhefeng Lou,Lanxin Xu,Wenbin Li,Xiao Lin,Xiaorui Zheng
Analogous to the pivotal SiO 2 /Si junction in modern electronics, the β-Bi 2 SeO 5 /Bi 2 O 2 Se architecture has been demonstrated to enhance the performance of electronic devices. However, its potential to improve the optoelectronic properties of Bi 2 O 2 Se, such as responsivity and detectivity, remains unexplored. The photodetection performance of Bi 2 O 2 Se is primarily limited by intrinsic selenium vacancies at its surface, which lead to low photocurrent and instability. To address this, a defect-engineered β-Bi 2 SeO 5 /Bi 2 O 2 Se heterojunction is constructed with an atomically sharp interface via a developed UV-assisted oxidation strategy. This heterostructure successfully suppresses surface vacancies while enabling dual functionality—surface passivation and photoactive charge separation, resulting in substantially enhanced optoelectronic performance. First-principles calculations confirm a stable type-II band alignment with interfacial transitions enabling efficient carrier dissociation. The visible-near-infrared transparency and high- k of β-Bi 2 SeO 5 further enable top-gated phototransistors with dynamically tunable photoresponse, achieving the largely improved metrics of responsivity (1.2 × 10 4 A W −1 ), detectivity (1.5 × 10 13 Jones), and on/off ratio (2.3 × 10 6 ). Additionally, by using thermal scanning probe lithography, a high-resolution (pixel pitch = 6.5 µm) β-Bi 2 SeO 5 /Bi 2 O 2 Se phototransistor array is fabricated and its imaging capabilities are demonstrated. The results establish an effective defect-engineered strategy with in situ large-area growth capability of β-Bi 2 SeO 5 and high-resolution device patterning, making β-Bi 2 SeO 5 /Bi 2 O 2 Se a promising photoresponsive platform for advanced optoelectronic devices.
研究领域:
光电子学
·
材料科学
·
纳米技术
·
半导体物理
·
器件工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ADVANCED MATERIALS
·
2017
·Vol. 29
·期 32
·1700439
·
IF 19.791
Lei Fu,Feng Wang,Bin Wu,Nian Wu,Wei Huang,Hanlin Wang,Chuanhong Jin,Lin Zhuang,Jun He,Lei Fu,Yunqi Liu
As a member of the group IVB transition metal dichalcogenides (TMDs) family, hafnium disulfide (HfS 2 ) is recently predicted to exhibit higher carrier mobility and higher tunneling current density than group VIB (Mo and W) TMDs. However, the synthesis of high-quality HfS 2 crystals, sparsely reported, has greatly hindered the development of this new field. Here, a facile strategy for controlled synthesis of high-quality atomic layered HfS 2 crystals by van der Waals epitaxy is reported. Density functional theory calculations are applied to elucidate the systematic epitaxial growth process of the S-edge and Hf-edge. Impressively, the HfS 2 back-gate field-effect transistors display a competitive mobility of 7.6 cm 2 V −1 s −1 and an ultrahigh on/off ratio exceeding 10 8 . Meanwhile, ultrasensitive near-infrared phototransistors based on the HfS 2 crystals (indirect bandgap ≈1.45 eV) exhibit an ultrahigh responsivity exceeding 3.08 × 10 5 A W −1 , which is 10 9 -fold higher than 9 × 10 −5 A W −1 obtained from the multilayer MoS 2 in near-infrared photodetection. Moreover, an ultrahigh photogain exceeding 4.72 × 10 5 and an ultrahigh detectivity exceeding 4.01 × 10 12 Jones, superior to the vast majority of the reported 2D-materials-based phototransistors, imply a great promise in TMD-based 2D electronic and optoelectronic applications.
研究领域:
材料科学
·
纳米技术
·
半导体器件
·
光电子学
·
凝聚态物理
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）