CERAMICS INTERNATIONAL
·
2024
·
IF 5.1
Shang Gao,Boyu Hu,Xin Song,Zhigang Dong,Renke Kang
Chemical mechanical polishing (CMP) offers promising pathway to smooth 4H-SiC. Dispersion stability of polishing slurry is crucial factor affecting 4H-SiC performance. Particles in polishing slurry can easily agglomerate due to poor dispersion stability, affecting surface quality of wafers. Nano-Al 2 O 3 is common particle in the slurry that directly controls mechanical removal. In this paper, the impact of different dispersants (PEG, (NaPO 3 ) 6 , and NH 4 PAA) on the dispersibility of slurry containing nano-Al 2 O 3 is studied. Results indicate that the slurry containing NH 4 PAA exhibits the greatest dispersion stability with superior 4H-SiC surface quality, with surface roughness (Sa) reaching 1.054 nm. The slurry containing PEG shows poor dispersion, leading to poor SiC surface quality, and the Sa reached 5.314 nm. The dispersion mechanism of different dispersants is also discussed.
研究领域:
材料科学
·
化学工程
✓ 已验证
产品关联
DOI
高影响因子
VACUUM
·
2024
·
IF 3.8
Bomin Feng,Jun Chen,Yifei Yang,Mao Yang,Hongbing Wang,Changyin Zhong,Yawei Hao,Jinhua Yang,Jian Jiao,Yunxi Yao
It is vital to understand the BN/SiC interface formation process. In this work, we choose 4H–SiC (0001) single crystalline surfaces as substrates to grow BN thin films by chemical vapor deposition with a borane-ammonia complex precursor. The chemical composition, surface morphology , and crystalline phase of the prepared BN/4H–SiC (0001) thin films were comprehensively characterized with XPS, Raman, AFM, SEM and TEM techniques. With the optimized preparation conditions, BN thin films with high crystallinity and low oxygen content (2.8 at%) can be fabricated. Three key factors of pretreatment of precursor, pyrolysis temperature, and post heat treatment have great effect on the growth of BN thin films. The successfully prepared BN/SiC (0001) thin films with the optimized growth conditions provide an ideal model system to study the influence of the various growth parameters on the quality of the BN thin films and the interface structures .
研究领域:
材料科学
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表面科学
✓ 已验证
产品关联
DOI
高影响因子
ECS Journal of Solid State Science and Technology
·
2024
·Vol. 13
·期 12
·124002
·
IF 1.8
Zifeng Ni,Menghao Xia,Guomei Chen,Jie Yu,Xueyu Lu,Shanhua Qian,Da Bian
In order to meet the requirements of atomic-level smoothness and non-damaging wafer surface with a high material removal rate (MRR) of silicon carbide (SiC), a new method assisted by photoelectron-Fenton reaction was studied to assist in chemical mechanical polishing. The coupling effects of ultraviolet light, electric field, and Fenton reaction in improving the slurry oxidation performance and the oxidation ability on the 4H-SiC wafer surface has been verified by measuring the oxidation-reduction potential, using probe detection methods, and conducting electrochemical experiments. Through immersion oxidation experiments, the oxidation mechanisms of SiC wafers were analyzed in depth using scanning electron microscope, energy-dispersive spectrometry, and X-ray photoelectron spectroscopy tests. The results showed that the photoelectro-Fenton reaction greatly enhanced the oxidation ability of the slurry, which improved the efficiency of oxide layer generation on the wafer surface. The high MRR of 102.4 nm h−1 and the low surface roughness (Ra) of 0.57 nm can be obtained after polishing under the condition of pH = 3, and the polishing and synergistic mechanism of 4H-SiC in the photoelectron-Fenton reaction solution was proposed.
研究领域:
材料科学
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化学工程
✓ 已验证
产品关联
DOI
高影响因子
LANGMUIR
·
2024
·
IF 3.7
Xin Song,Boyu Hu,Jiani Guo,Renke Kang,Shang Gao
Single-oxidant slurries are prevalently utilized in chemical and mechanical polishing (CMP) of 4H-SiC crystal. Nevertheless, it is a challenge to achieve a high material removal rate (MRR) and surface quality using single oxidant slurries to meet the needs of global planarization and damage-free nanoscale surface processing of SiC wafers. To solve this challenge, a novel method is proposed for SiC CMP processing using the double oxidant slurry. This slurry mainly consists of alumina (Al2O3) abrasive particles, potassium permanganate (KMnO4), potassium persulfate (K2S2O8), and deionized water. Post CMP, MRR is 1045 nm/h calculated by scratch method, and surface roughness Sa is 0.33 nm measured by 3D optical surface morphometer, with the measurement area of 868 μm × 868 μm. Both the MRR and Sa are far better than those under the single oxidant slurry condition. CMP mechanism with double-oxidant slurry conditions is elucidated by energy dispersive spectrometer and X-ray photoelectron spectrometer. Initially, the Si–C bond on the SiC wafer surface was oxidized by KMnO4, then MnO2 as the reduction product of KMnO4 can also catalyze the S2O82– to further oxidize SiC wafer surface, and eventually the oxidation layers were removed by mechanical action of nano-Al2O3 abrasive particles during CMP processing. These findings offer a pioneering approach and novel perspectives to achieve a higher MRR of 4H-SiC CMP, with potential implications for the application in high-performance SiC devices.
研究领域:
材料科学
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化学工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
International Journal of Precision Engineering and Manufacturing
·
2021
·Vol. 22
·期 5
·951-963
·
IF 2.106
He Yan,Yuan Zewei,Song Shuyuan,Gao Xingjun,Deng Wenjuan
Photocatalysis-assisted chemical mechanical polishing, in which the photocatalysis oxidation and silica abrasives polishing are combined, is a novel finishing technique for 4H–SiC wafer. This paper characterizes the effect of pressure and abrasives on the MRR and surface quality and discusses mechanical and chemical interaction based three slurries that resulted in maximum material removal rate (1.18 μm/h) with PCMP slurry. The polished silicon carbide wafer was examined with atomic force microscope, transmission electron microscope and X-ray photoelectron spectroscopy for surface quality and material removal mechanism. The results show that an atomically smooth and flat 4H–SiC (0001) surface (Ra about 0.247 nm) was obtained by PCMP. The interface of crystal and amorphous layer of 4H–SiC wafer was flat without introducing crystallographic subsurface damage, and the atoms and lattice fringes of the crystal layer are arranged in regular order. The existence of a thin silicon oxycarbide layer, which are various forms of functional groups such as Si–C, Si–C–O, Si–O, Si 4 C 4 O 4 , C–O, and C = O, at the interface. And, it also demonstrates that the amorphous layer is composed of oxide layer (4–6 nm) and distorted layer. The silicon carbide surface is mechanically activated, oxidized and mechanically removed in turn, which is the main method of material removal.
研究领域:
材料科学
·
半导体加工技术
✓ 已验证
产品关联
DOI
高影响因子
APPLIED SURFACE SCIENCE
·
2025
·
IF 6.9
Chong Shan,Zhiwei He,Erxi Wang,Xiaohui Zhao,Zhan Sui,Jianjun Cao
A biomimetic superhydrophobic surface was fabricated on single-crystal 4H-SiC using a two-step femtosecond laser processing strategy followed by surface silanization. Drawing inspiration from the micro/nanostructures of butterfly wings and shark skin, a hybrid hierarchical architecture was engineered by first generating microscale grid patterns and then inscribing small grooves within each grid cell. This morphology significantly enhanced surface roughness and provided the structural basis for wettability modulation. Systematic characterization revealed that laser-induced oxidation introduced abundant polar functional groups, resulting in superhydrophilicity, which was subsequently converted into superhydrophobicity (water contact angle ∼ 154°) via octyltriethoxysilane (OTES) modification. The resulting surface exhibited excellent robustness to processing parameters, with superhydrophobicity achieved across a wide range of laser powers (30–110 mW) and grid spacings (50–150 μ m ). EDS and XPS analyses confirmed the transformation of polar oxide species into nonpolar chemical groups following modification. Functional demonstrations showed that the fabricated surface possessed strong self-cleaning and anti-icing capabilities, with water droplets rapidly rolling off to remove contaminants and delaying ice nucleation by over threefold compared to untreated SiC. This work provides a scalable, maskless, and environmentally friendly approach to functionalize SiC surfaces, paving the way for their application in harsh environments such as aerospace, microfluidics, and power electronics.
研究领域:
材料科学
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应用物理
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纳米技术
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表面工程
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仿生学
✓ 已验证
产品关联
DOI
高影响因子
Small
·
2024
·
IF 13
Hulin Wang,Weijun Li,Marko Gloginjić,Srdjan Petrović,Tetyana V. Krupska,Vladimir V. Turov,Jialong Zhao,Weiyou Yang,Zhentao Du,Shanliang Chen
Emerging photoelectrochemical (PEC) photodetectors (PDs) have notable advantages over conventional PDs and have attracted extensive attention. However, harsh liquid environments, such as those with high corrosivity and attenuation, substantially restrict their widespread application. Moreover, most PEC PDs are constructed by assembling numerous nanostructures on current collector substrates, which inevitably contain abundant interfaces and defects, thus greatly weakening the properties of PDs. To address these challenges, a high-performance pH-universal PEC ultraviolet (UV) PD based on a whole single-crystal integrated self-supporting 4 H -SiC nanopore array photoelectrode is constructed, which is fabricated using a two-step anodic oxidation approach. The PD exhibits excellent photodetection behavior, with high responsivity (218.77 mA W −1 ), detectivity (6.64 × 10 13 Jones), external quantum efficiency (72.47%), and rapid rise/decay times (17/48 ms) under 375 nm light illumination with a low intensity of 0.15 mW cm −2 and a bias voltage of 0.6 V, which is fall in the state-of-the-art of the wide-bandgap semiconductor-based PDs reported thus far. Furthermore, the SiC PEC PD exhibits excellent photoresponse and long-term operational stability in pH-universal liquid environments. The improved photodetection performance of the SiC PEC PD is primarily attributed to the synergistic effect of the nanopore array structure, integrated self-supporting configuration, and single-crystal structure of the whole photoelectrode.
研究领域:
材料科学
·
光电检测
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纳米技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Nano Energy
·
2022
·
IF 19.069
Linlin Zhou,Tao Yang,Zhi Fang,Jiadong Zhou,Yapeng Zheng,Chunyu Guo,Laipan Zhu,Enhui Wang,Xinmei Hou,Kuo-Chih Chou,Zhong Lin Wang
Piezoelectric polarization promoted photoelectrochemical (PE-PEC) water splitting is a promising strategy to obtain hydrogen energy by converting light, kinetic, and electrical energy into chemical energy . However, novel piezoelectric semiconductors are urgently needed owing to the improper band positions and poor stability of most current piezoelectric materials . In this work, a method of inducing piezopotential in N doped 4H-SiC nanohole arrays (NHAs) for water splitting is proposed. The modulation effects of N doping with various contents on the electronic structure and piezoelectricity of 4H-SiC are comprehensively analyzed. By introducing piezoelectric field to regulate transport behavior of charges, the current density of NHAs reaches 6.50 mA cm −2 at 1.4 V Ag/AgCl , indicating a 50.1% enhancement compared with that without polarization (4.33 mA cm −2 at 1.4 V Ag/AgCl ). The conjunction mechanism of photoelectric catalytic capacity and piezoelectricity of N doped 4H-SiC NHAs is elaborated, providing powerful guidance for manufacturing piezoelectric semiconductor photoanodes in PE-PEC water splitting.
研究领域:
材料科学
·
能源转化
·
半导体技术
✓ 已验证
产品关联
DOI
高影响因子
ACS Photonics
·
2024
·
IF 6.5
Shulin Sha,Kai Tang,Maosheng Liu,Peng Wan,Zeng Liu,Da Ning Shi,Caixia Kan,Mingming Jiang
Ferroelectric materials, known for their superior spontaneous polarization and pyroelectric and photovoltaic effects, offer a promising avenue for fabricating high-performance optoelectronic devices. Herein, we report an ultraviolet (UV) photodetector (PDs) based on BaTiO3@MXene/4H-SiC heterostructure, with its photosensitive properties significantly boosted by the ferro-pyro-phototronic effect. In the detector, the incorporation of MXene nanosheets boosts the spontaneous ferroelectric polarization of BaTiO3 nanocrystals, thereby strengthening the built-in electric field at the BaTiO3/4H-SiC heterojunction. The resulted BaTiO3@MXene/4H-SiC heterostructure can work in a self-biasing manner, with robust performances, including responsivity (∼187.74 mA/W), specific detectivity (∼6.52 × 1013 Jones), external quantum efficiency (∼75.07%), response/recovery time (∼74.3/122.7 μs) upon 310 nm light irradiation. Particularly, the superlinear increase of the photocurrent, which results from the hot-carrier multiplication in MXene nanosheets, allows the device to produce additional photocurrent under ultraviolet illumination. Theoretical analysis confirms that the surface modification of MXene nanosheets can effectively alter the length of the Ti–O bonds on BaTiO3 nanocrystal surfaces, thus enhancing their spontaneous ferroelectric polarization. Being seamlessly integrated into an ultraviolet wireless communication system, the BaTiO3@MXene/4H-SiC self-powered photodetector demonstrates promising application prospects in optoelectronic interconnection circuits. This study provides an optimization strategy for advanced BaTiO3 nanocrystals toward future high-performance electronic and optoelectronic devices in existing applications.
研究领域:
材料科学
·
光电子学
·
纳米技术
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MATERIALS PROCESSING TECHNOLOGY
·
2021
·
IF 5.551
Wantang Wang,Baoguo Zhang,Yunhui Shi,Tengda Ma,Jiakai Zhou,Ru Wang,Hanxiao Wang,Nengyuan Zeng
Chemical mechanical polishing (CMP) has revolutionized the processing of semiconductor material such as silicon carbide (SiC). However, the strong chemical bond between silicon atoms and carbon atoms gives SiC materials a very high mechanical hardness and chemical stability. Therefore, SiC wafers may suffer from a low material removal rate (MRR) and serious subsurface damage when traditional CMP methods are used. In this study, to improve the CMP properties of Si-face of the 4H-SiC wafers, the synergistic effect of UV and TiO 2 on the activation of persulfate (PS) was investigated for the first time. The response surface method was employed to study the effect of pH, PS concentration, and TiO 2 dosage on CMP in-depth, and to ultimately optimize the polishing process. The analysis demonstrated that an MRR of 608 nm/h can be obtained with the average surface roughness ( Sq ) of 0.521 nm when the pH is 6, in which the TiO 2 dosage is 0.015 wt% and the PS concentration is 3 wt%. Polarization curves , AC impedance spectra and X-ray photoelectron spectroscopy tests were performed to further analyze the chemical action of the slurry, which showed that the introduction of UV-TiO 2 strongly enhances the chemical action of slurry and results in the formation of a passivated layer on the SiC surface. Finally, based on the radical quenching experiments and the results mentioned above, a model that relates to the removal of 4H-SiC by UV-TiO 2 synergistic activation of PS is proposed.
研究领域:
材料科学
·
半导体加工
✓ 已验证
产品关联
DOI
高影响因子
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
·
2025
·
IF 4.6
Jiawen Yao,Jingkuang Wen,Liyuan Yin,Hanxiao Li,Yongtian Lu,Chufeng Sun,Zhehan Li,Hang Zhang,Jisheng Pan
This paper systematically investigates the effects of anodic oxidation parameters on the electrochemical tribological behavior of 4H-SiC wafers. Material removal characteristics are quantitatively characterized via coefficient of friction (COF) curves, wear morphologies, and wear areas. Results show that the electric field significantly reduces COF and enhances material removal rate. Increasing voltage alters silicon carbide (SiC) surface oxidation characteristics, triggering abrupt COF changes. Silica abrasives reduce wear on Si 3 N 4 grinding balls, further lowering the average COF while increasing its fluctuations. The material removal efficiency of 150 nm and 100 nm SiO 2 abrasives increases by 17.5 times and 7.9 times, respectively, compared to the abrasive-free condition.
研究领域:
材料科学
·
表面工程
·
电化学
·
微纳加工
·
半导体材料
✓ 已验证
产品关联
DOI
高影响因子
WEAR
·
2025
·
IF 6.1
Zhijun CHEN,Qiusheng YAN,Jisheng PAN,Hanhao LIU,Kaiyuan LUO,Jingyuan ZHENG
In photocatalytic-assisted magnetorheological polishing(PMRP), both the opacity of the magnetorheological fluid and the non-magnetic properties of the photocatalyst limit the processing efficiency and quality of SiC wafers. In this paper, the magnetorheological fluid is prepared by using photocatalysts with different physical phases(liquid/solid) and properties(magnetic/non-magnetic), and then the friction chemical mechanism is carried out on SiC. The results show that the transmittance of the magnetorheological fluid and the distribution state of the photocatalyst synergistically cooperate to control the chemical oxidation rate of single-crystal SiC. When using magnetic particles with photocatalytic coatings for processing, the photocatalytic reaction spots can be effectively constrained and the SiC oxidation efficiency can be improved.
研究领域:
材料科学
·
化学工程
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）