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INORGANIC CHEMISTRY · 2020 · IF 4.825

Ultraviolet-A Persistent Luminescence of a Bi3+-Activated LiScGeO4 Material

Zhihao Zhou,Puxian Xiong,Huailu Liu,Mingying Peng

Long persistent phosphors (LPPs) with ultraviolet (UV) luminescence have great potential for application in the fields of biomedicine, environmental, and catalysis. However, it is currently limited by the design and development of remarkable UV LPPs with a suitable spectral region and an ultralong afterglow decay time. Herein, we develop a new type of Bi3+-activated LiScGeO4 LPP, which exhibits bright ultraviolet-A (UVA) persistent luminescence (PersL). Because of the existence of numerous stabilized effective traps, the as-synthesized phosphors can undergo an ultralong PersL decay time far longer than 12 h. The PersL properties, effective trap depths, distributions, and types, as well as the possible mechanism for the PersL behavior of LiScGeO4:Bi3+, are comprehensively surveyed utilizing PersL excitation spectra, PersL decay analyses, thermoluminescence experiments, and X-ray photoelectron spectroscopy. This work can cover the shortage of LPPs in the UV region and also can lay the foundation for the development of more excellent UV LPPs toward versatile novel applications.

研究领域: 材料科学 · 生物医学 · 环境科学 · 催化领域
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ECS Journal of Solid State Science and Technology · 2021 ·Vol. 10 ·期 5 ·055011 · IF 2.07

A Novel White-Light-Emitting Phosphor Based on Bi3+-Doped BaLu2MgGa2Si2O12 for Near-UV Excited White LEDs

Jian Zhang,Ming Wang,Zhiyong Fang,Xiaohui Lai,Zhiqiang Zhong,Rui Zhang

Bi3+-activated luminescence materials have gained growing attentions for optoelectronic applications. In this work, a novel BaLu2MgGa2Si2O12: Bi3+ garnet phosphor was synthesized through a traditional high-temperature solid phase reaction method. The crystal structure was ascertained through X-ray diffraction analysis and Rietveld structural refinement. The particle morphology and constituent elements distributions were investigated through scanning electron microscope and element mapping. Excited at 330 or 370 nm, the phosphors exhibit two emission peaks located at 413 and 495 nm, which is ascribed to the allowed transitions of Bi3+: 3P1 → 1S0. The luminescence intensity reaches the maximum at the 4 mol% Bi3+ doping content, and the emission color is easily manipulated by tuning the excitation wavelength. Besides, the luminescence intensity at 150 ℃ remains 80% of that at room temperature. These results suggest that the novel phosphors have promising application in the near-UV excited white LEDs.

研究领域: 材料科学 · 光学
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JOURNAL OF MOLECULAR STRUCTURE · 2023 · IF 3.8

A potential cyan phosphor for full spectrum light-emitting diodes: Bi3+ activated SrBaGdGaO5 phosphor

Gaoliang Wang,Jian Li,Liuyang Xu,Honglei Yuan,Xianke Sun

Bi 3+ activated phosphors show potential applications in white light emitting diodes. Here, Bi 3+ activated SrBaGdGaO 5 phosphors with different Bi 3+ concentrations were prepared. The phase and oxidation states, absorbance/excitation/emission spectra, decay characteristics, and thermostability were researched. Depending on excitation of NUV light, the Bi 3+ activated SrBaGdGaO 5 phosphors emit cyan light originating from the radiative 3 P 1  →  1 S 0 transitions of Bi 3+ . On the basis of temperature-dependence emission spectra, the activation energy was calculated as 0.305 eV. The warm white light with a correlated color temperature of 4106 K and a color rendering index of 89.2 was emitted by the WLED device consisting of near ultraviolet LED chips, SrBaGdGaO 5 :Bi 3+ and CaAlSiN 3 :Eu 2+ phosphors. The luminescence performance of the cyan SrBaGdGaO 5 :Bi 3+ phosphors indicates that they can remedy the cyan absence for full spectrum white lighting emitting diodes.

研究领域: 材料科学 · 光学工程
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JOURNAL OF RARE EARTHS · 2024 ·Vol. 43 ·期 3 ·543-551 · IF 5.2

A narrow-band blue emitting phosphor by co-doping Bi3+ and alkali metal ions (Li+, Na+ and K+) with dual luminescence center

Lang Ruan,Zeyun Zhou,Yi Hu,Ruifeng Peng,Xiaoyan Chen,Ming Cheng,Zhi Zhou,Mao Xia

The technology of solid-state lighting has developed for decades in various industries. Phosphor, as an element part, determines the application domain of lighting products. For instance, blue and red-emitting phosphors are required in the process of plant supplementing light, arrow-band emitting phosphors are applied to backlight displays, etc. In this work, a Bi 3+ -activated blue phosphor was obtained in a symmetrical and compact crystal structure of Gd3SbO7 (GSO). Then, the co-doping strategy of alkali metal ions (Li + , Na + , and K + ) was used to optimize the performance. The result shows that the photoluminescence intensity is increased by 2.1 times and 1.3 times respectively by introducing Li + and K + ions. Not only that, it also achieves narrow-band emitting with the full width of half-maximum (FWHM) reaching 42 nm through Na + doping, and its excitation peak position also shifts from 322 to 375 nm, which can be well excited by near-ultraviolet (NUV) light emitting diode (LED) chips (365 nm). Meanwhile, the electroluminescence spectrum of GSO:0.6 mol%Bi 3+ ,3 wt%Na + matches up to 93.39% of the blue part of the absorption spectrum of chlorophyll a . In summary, the Bi 3+ -activated blue phosphor reported in this work can synchronously meet the requirements of plant light replenishment and field emission displays .

研究领域: 材料科学 · 光学工程 · 固体照明 · 光电子学 · 农业光生物学
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JOURNAL OF ALLOYS AND COMPOUNDS · 2024 · IF 5.8

Zero-thermal-quenching broadband yellow-emitting Bi3+-activated phosphors based on metal to metal charge transfer

Ke Chen,Peixin Gao,Zengtao Zhang,Yibiao Ma,Zan Luo,Maxim S. Molokeev,Zhi Zhou,Mao Xia

Bi 3+ -activated phosphors have been proven to have potential applications foreground in white light-emitting diodes (WLED), plant growth lamps and temperature sensing. Therefore, it is urgent to exploit high-efficiency Bi 3+ -activated phosphors. Herein, a novel broadband yellow-emitting phosphor Ba 2 GdGaO 5 :Bi 3+ with high internal quantum efficiency (IQE = 77%) was obtained based on metal to metal charge transfer (MMCT) between Bi 3+ ground state and Gd 3+ excited states. The photoluminescence excitation (PLE) spectrum and photoluminescence (PL) spectrum range from 225 nm to 400 nm and 400 nm to 700 nm, respectively, which can avoid the reabsorption phenomenon efficiently. Besides, Ba 2 GdGaO 5 :Bi 3+ has superior thermal stability and it shows zero-thermal-quenching at 150 °C. The K + doping hardly changes the thermal stability and can improve the PL intensity to 133.1% when the K + concentration is 2%. Finally, a phosphor-convert WLED (pc-WLED) was simply synthesized by Ba 2 GdGaO 5 :Bi 3+ and BaMgAl 10 O 17 :Eu 2+ (BAM:Eu 2+ ) phosphors. The doping of Eu 3+ can significantly enhance the color rendering index (CRI, from 88.1 to 91.5) and reduce the correlated color temperature (CCT, from 4911 K to 4014 K). The above experimental results demonstrated that the phosphor has great application prospect in WLED.

研究领域: 材料科学 · 发光材料 · 固态化学 · 光电子学 · 无机功能材料
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