Journal of Materials Chemistry C
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2017
·Vol. 5
·期 40
·10652-10659
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IF 5.256
Weiyao Wei,Cheng Yang,Jiaying Mai,Yanfen Gong,Longsen Yan,Kai Zhao,Honglong Ning,Sujuan Wu,Jinwei Gao,Xingsen Gao,Guofu Zhou,Xubing Lu,J.-M. Liu
The interface between the dielectric and the active layer plays a critical role on the performance of solution-processed organic thin-film transistors (OTFTs). However, the creation of a high quality interface still represents a considerable challenge because it requires the balancing of surface energy with surface wettability. This study shows that UV-ozone treatment is very effective to obtain a high quality interface between a dielectric SiO2 film and a solution-processed 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) semiconductor film. After only one minute UV-ozone exposure on the SiO2 surface, the hole mobility at room temperature reaches 6.50 cm2 (V s)−1 for a solution-processed C8-BTBT-OTFT. UV-ozone treatment can not only modify both surface energy and surface wettability but also clean the SiO2 surface. Consequently, it changes the degree of ordered growth, grain sizes, and grain boundaries in C8-BTBT films. Hence, UV-ozone treatment is a simple and efficient way to produce the desirable interface qualities that enable the highly ordered growth of C8-BTBT films. Using this method it is also very promising to produce a high-quality interface between the dielectric film and other solution-processed organic semiconductors to fabricate other high-performance OTFT applications.
研究领域:
材料科学
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电子工程
✓ 已验证
产品关联
DOI
高影响因子
Results in Physics
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2020
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IF 4.019
Yuan Zhao,Xiaoliang Liu,Guangdi Feng,Lu Lyu,Lin Li,Shitan Wang,Jie Jiang,Youzhen Li,Dongmei Niu,Haipeng Xie,Yongli Gao
The modification of C 60 nano-interlayers on the organic field-effect transistors (OFETs) based on 2,7-diocty[1]benzothieno-[3,2-b]benzothiophene (C8-BTBT)/SiO 2 was addressed at both the electronic structure and device level. It is observed that a band bending occurs in C8-BTBT layer with the insertion of C 60 , which induces a strong hole accumulation at the interface region, facilitating the formation of high concentration conducting channel when the interface is incorporated into OFETs. The strong acceptor C 60 may cause charge transfer from the trap states in C8-BTBT, resulting in a field-effect operation with decreased threshold voltage. However, the increasing disorder in C8-BTBT induced by the C 60 nano-interlayer may reduce the hole mobility at the C8-BTBT/SiO 2 interface region and change the growth model of C8-BTBT. In addition, as confirmed by the transfer characteristic of the OFETs, the thin C 60 insertion layer isn’t continuous enough to induce an ambipolar transport behavior despite its high mobility. The competition between the two opposite effects results in compromised performance in such OFETs. The device performance parameters deteriorate generally with increasing the C 60 nano-interlayer thickness. So, it is inferred that the C 60 interlayer alone cannot improve the performance of the C8-BTBT/SiO 2 -based OFETs without further optimization. Importantly, the device performance exhibits an abnormal improvement with a 6 nm C 60 interlayer, which might be ascribed to a higher energy level shift of C8-BTBT caused by a quasi-continuous C 60 film at this thickness.
研究领域:
材料科学
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电子工程
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纳米技术
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产品关联
DOI
高影响因子
Nanoscale Research Letters
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2019
·Vol. 14
·期 1
·1-8
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IF 3.159
Mai Jiaying,Tang Naiwei,He Waner,Zou Zhengmiao,Luo Chunlai,Zhang Aihua,Fan Zhen,Wu Sujuan,Zeng Min,Gao Jinwei,Zhou Guofu,Lu Xubing,Liu J-M
We performed a systematic study of the influence of environmental conditions on the electrical performance characteristics of solution-processed 2,7-dioctyl [1] benzothieno[3,2-b][1]-benzothiophene (C8-BTBT) thin-film transistors (TFTs). Four environmental exposure conditions were considered: high vacuum (HV), O 2 , N 2 , and air. The devices exposed to O 2 and N 2 for 2 h performed in a manner similar to that of the device kept in HV. However, the device exposed to air for 2 h exhibited significantly better electrical properties than its counterparts. The average and highest carrier mobility of the 70 air-exposed C8-BTBT TFTs were 4.82 and 8.07 cm 2 V -1 s -1 , respectively. This can be compared to 2.76 cm 2 V -1 s -1 and 4.70 cm 2 V -1 s -1 , respectively, for the 70 devices kept in HV. Furthermore, device air stability was investigated. The electrical performance of C8-BTBT TFTs degrades after long periods of air exposure. Our work improves knowledge of charge transport behavior and mechanisms in C8-BTBT OTFTs. It also provides ideas that may help to improve device electrical performance further.
研究领域:
材料科学
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电子工程
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半导体物理
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DOI
PubMed
高影响因子
ADVANCED MATERIALS
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2013
·Vol. 25
·期 40
·5762-5766
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IF 14.829
Congcheng Fan,Arjan P. Zoombelt,Hao Jiang,Weifei Fu,Jiake Wu,Wentao Yuan,Yong Wang,Hanying Li,Hongzheng Chen,Zhenan Bao
Graphical Organic single-crystalline p-n junctions are grown from mixed solutions. First, C 60 crystals (n-type) form and, subsequently, C8-BTBT crystals (p-type) nucleate heterogeneously on the C 60 crystals. Both crystals continue to grow simultaneously into single-crystalline p-n junctions that exhibit ambipolar charge transport characteristics. This work provides a platform to study organic single-crystalline p-n junctions.
研究领域:
材料科学
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电子工程
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有机半导体
✓ 已验证
产品关联
DOI
PubMed
高影响因子
SYNTHETIC METALS
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2017
·
IF 2.435
Yuan Zhao,Xiaoliang Liu,Lu Lyu,Lin Li,Wenjun Tan,Shitan Wang,Can Wang,Dongmei Niu,Haipeng Xie,Han Huang,Yongli Gao
Modification by ultra-thin fullerene (C 60 ) insertion layer of about 1 monolayer on the electronic structure and the film growth of 2,7-diocty[1]benzothieno-[3,2-b]benzothiophene (C8-BTBT) on silicon oxide (SiO 2 ) is investigated using ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and X-ray diffraction (XRD). It is found that the ultra-thin C 60 insertion layer doesn’t induce an ambipolar charge transport characteristic but it indeed lifts up the energy levels of C8-BTBT, resulting in p-doping and hole accumulation at the semiconductor-dielectric interface. The charge transfer from trap states residing in the band gap of C8-BTBT to the lowest unoccupied molecular orbital (LUMO) of C 60 most likely leads to a decrease of threshold voltage for corresponding organic field effect transistors (OFETs) based on such a configuration. Band bending and decrease of the ionization potential (IP) are observed in the C8-BTBT film attributed to the increasing ordering of molecular orientation with the deposition of C8-BTBT. The HOMO downward shift is clearly bigger with the C 60 insertion layer than that without. A typical Volmer-Weber (VW) growth mode is detected due to the weaker van der Waals interaction between C8-BTBT and the underlying layer of C 60 /C8-BTBT than that between the C8-BTBT molecules. Compared to without C 60 interlayer, the molecular packing is a little more disordered at low coverages, resulting in more C8-BTBT molecules to lean away from the interface normal. The C8-BTBT film in such a structure phase has the HOMO closer to the E F than that at an almost perfectly vertically standing up configuration. Our results show that the introduction of C 60 insertion layer lifts up the HOMO of C8-BTBT and improves the energy level alignment at the interface.
研究领域:
材料科学
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物理化学
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半导体器件
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DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
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2023
·Vol. 33
·期 23
·2213788
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IF 19
Yanling Xiao,Wei Deng,Jiajing Hong,Xiaobin Ren,Xiujuan Zhang,Jialin Shi,Fangming Sheng,Xiaohong Zhang,Jiansheng Jie
Application-oriented growth of patterned organic semiconductor (OSC) thin films with a single domain is a nonnegotiable requirement for the manufacturing of high-performance organic electronic devices. However, the prevalent selective-wetting patterning method remains a challenge in controlling the density of nucleation events in microscale spaces, resulting in thin films with high grain boundary density and no preferential orientation spherulites. Herein, a simple double-blade-coating printing technique using a combination of wetting-patterned substrates to produce an array of highly crystalline OSC thin films is developed. Specifically, the approach confines the OSC crystallization on a molecular-flat water surface in specific areas, enabling a significant reduction in the number of nuclei. Consequently, patterned 2,7-dioctyl[1]benzothieno[3,2-b] benzothiophene (C 8 -BTBT) thin films comprising single-crystal domains are achieved with an exceptionally high yield of 62.5%. The organic field-effect transistor array developed from such patterns of C 8 -BTBT single-crystalline films exhibits an excellent average mobility of 11.5 cm 2 V −1 s −1 which is 12.5-fold higher compared to that of the reference sample fabricated via conventional single-blade coating. It is believed that this approach can be widely applied to other soluble organic materials, thereby opening up opportunities for fabricating multicomponent integrated electronics.
研究领域:
材料科学
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纳米技术
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有机电子学
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半导体器件
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DOI
高影响因子
ADVANCED MATERIALS
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2019
·Vol. 31
·期 16
·1900763
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IF 25.809
Yuanhong Gao,Ya Yi,Xinwei Wang,Hong Meng,Dangyuan Lei,Xue-Feng Yu,Paul K. Chu,Jia Li
The interfacial charge effect is crucial for high-sensitivity organic phototransistors (OPTs), but conventional layered and hybrid OPTs have a trade-off in balancing the separation, transport, and recombination of photogenerated charges, consequently impacting the device performance. Herein, a novel hybrid-layered phototransistor (HL-OPT) is reported with significantly improved photodetection performance, which takes advantages of both the charge-trapping effect (CTE) and efficient carrier transport. The HL-OPT consisting of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) as conduction channel, C8-BTBT:[6,6]-phenyl-C 61 -butyric acid methyl ester (PC 61 BM) bulk heterojunction as photoactive layer, and sandwiched MoO 3 interlayer as a charge-transport interlayer exhibits outstanding photodetection characteristics such as a photosensitivity ( I light / I dark ) of 2.9 × 10 6 , photoresponsivity ( R ) of 8.6 × 10 3 A W −1 , detectivity ( D* ) of 3.4 × 10 14 Jones, and external quantum efficiency of 3 × 10 6 % under weak light illumination of 32 µW cm −2 . The mechanism and strategy described here provide new insights into the design and optimization of high-performance OPTs spanning the ultraviolet and near infrared (NIR) range as well as fundamental issues pertaining to the electronic and photonic properties of the devices.
研究领域:
光电子学
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有机电子学
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光电探测器
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材料科学
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纳米技术
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）