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CIGS
Nanoscale Research Letters · 2018 ·Vol. 13 ·期 1 ·1-7 · IF 3.125

Phase-Selective Synthesis of CIGS Nanoparticles with Metastable Phases Through Tuning Solvent Composition

Zhang Xiaokun,Liu Shuai,Wu Fang,Peng Xiaoli,Yang Baoguo,Xiang Yong

I-III-VI 2 compounds have shown great interests in the application of functional semiconductors. Among them, Cu(In,Ga)S 2 has been a promising candidate due to its excellent optoelectronic properties. Although the polymorphs of Cu(In,Ga)S 2 have been attracted extensive attentions, the efforts to developing the methodologies for phase-controlled synthesis of them are rare. In this paper, we reported a phase-selective synthesis of CIGS nanoparticles with metastable phases via simply changing the composition of solvents. For the wet chemistry synthesis, the microstructure of the initial nuclei is decisive to the crystal structure of final products. In the formation of Cu(In,Ga)S 2 , the solvent environment is the key factor, which could affect the coordination of monomers and influence the thermodynamic conditions of Cu-S nucleation. Moreover, wurtzite and zincblende Cu(In,Ga)S 2 nanoparticles are selectively prepared by choosing pure en or its mixture with deionized water as reaction solvent. The as-synthesized wurtzite Cu(In,Ga)S 2 possess a band gap of 1.6 eV and a carrier mobility of 4.85 cm 2 /Vs, which indicates its potential to construct a heterojunction with hexagonal-structured CdS for solar cells.

CAS / MDL: 10025-82-8
研究领域: 材料科学 · 半导体物理
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SOLAR ENERGY · 2020 · IF 4.608

Quantum yield enhancement of Mn-doped CsPbCl3 perovskite nanocrystals as luminescent down-shifting layer for CIGS solar cells

Fan Sui,Mingyue Pan,Zhengyan Wang,Ming Chen,Wenjie Li,Yan Shao,Weimin Li,Chunlei Yang

The emission and absorption properties of Mn doped CsPbCl 3 NC make it ideal candidates as luminescent down shifting layer material for solar cells, However, effective Mn doping and further quantum yield improvement remains challenging. We present our modified hot injection route to obtain Mn doped CsPbCl 3 nanocrystals with different morphologies and enhanced quantum yield. The samples presented were synthesized with precursor MnCl 2 and PbCl 2 with the ratio of 1:1, 1:2, 1:2.5 and 1:3. For samples with lower Mn doping level, the as prepared samples are uniform nanocubes with average size of 11 nm. When MnCl 2 amount is increased beyond 2.5, large piece of nanosheets were found by TEM and AFM with ultrathin thickness and strong quantum confinement effect. CsPbCl 3 nanocrystals with optimal Mn doping level show enhanced quantum yield of 69%. Luminescent down shifting layers prepared from Mn doped CsPbCl 3 nanocrystals successfully increased short-circuit current (6.67%) and PCE (1.67%) of Cu(In,Ga)Se 2 solar cell.

研究领域: 材料科学 · 能源技术 · 纳米科技
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Materials Today Energy · 2025 · IF 8.6

A stepwise solvent-annealing strategy for high-efficiency four-terminal Perovskite/Cu(InGa)Se2 tandem solar cells

Dandan Chen,Fengxia Yang,Mei Yang,Wenming Chai,Weidong Zhu,Chunfu Zhang,Yun Zhao,Yan Li

Perovskite and Cu(InGa)Se 2 (CIGS) tandem solar cells are emerging as an exciting prospect to achieve high-performance, cost effective, and lightweight all-thin-film photovoltaics, wherein perovskite solar cells (PSCs) fabricated using high-quality wide-bandgap perovskite films are critical to realize the high-efficiency PSC/CIGS tandem solar cells. Herein, a stepwise dimethyl sulfoxide (DMSO) solvent-annealing strategy is proposed to fabricate wide-bandgap (1.68 eV) Cs 0.15 FA 0.65 MA 0.2 PbI 2.4 Br 0.6 films via stepwise heating recipe, that is annealed at 100 °C firstly and then 80 °C. This modified solvent-annealing method makes for the Cs 0.15 FA 0.65 MA 0.2 PbI 2.4 B r0.6 films with full coverage, large grains, improved crystallinity, and free of impurities. Opaque PSCs with the desired Cs 0.15 FA 0.65 MA 0.2 PbI 2.4 B r0.6 films exhibit a champion power conversion efficiency (PCE) of 21.66 % and excellent stability. Furthermore, using an optimized IZO transparent electrode, the semitransparent PSCs with an impressive PCE of 21.26 % and a high bifaciality factor of 92.2 % are fabricated. These PSCs can further enable the four-terminal (4-T) PSC/CIGS tandem solar cells with a summed PCE of 29.36 %, surpassing of most the similar tandem solar cells reported earlier.

CAS / MDL: 18868-43-4
研究领域: 材料科学 · 光伏技术 · 能源工程
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ACS Applied Energy Materials · 2022 · IF 6.959

Chemical-Bath-Deposited Zn(S,O) Buffer Achieves 12.0% Efficient Solution-Processed CIGS Solar Cells

Shuaiqi Han,Jingjing Jiang,Xinge Liu,Bingyan Li,Kangjie Zhang,Shasha Hao,Shaotang Yu,Weibo Yan,Hao Xin

The state-of-the-art copper indium gallium selenide Cu(In,Ga)Se2 (CIGS) thin-film solar cells are fabricated based on vacuum methods and use cadmium sulfide as the buffer layer. Considering the cost-effective production and environmental safety, fabrication of a CIGS absorber via the solution process and using a cadmium-free buffer layer is desirable. Here, we report engineering of a chemical-bath-deposited zinc sulfoxide Zn(S,O) buffer layer for solution-processed CIGS solar cells. Our results show that optimization of the deposition time and annealing process of the Zn(S,O) film to avoid cracking is critical to obtain a dense and uniform Zn(S,O) buffer layer. Benefited from the large band gap of Zn(S,O) and light-soaking-induced device performance improvement, a champion CIGS solar cell with a power conversion efficiency of 12.0% (without antireflection coating) has been achieved. This is the first time that the Zn(S,O) buffer layer has been applied to a solution-processed CIGS absorber and achieves highly efficient CIGS solar cells. The effect of light-soaking on the heterojunction property and the stability of device performance are discussed.

研究领域: 光伏技术 · 材料科学 · 薄膜太阳能电池 · 可再生能源
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OPTICAL MATERIALS · 2023 · IF 3.9

Controllable and innovative preparation of Zn(O,S) buffer layers for CIGS thin film solar cells

Haoran Li,Jiao Wang,Yanping Wang,Aimei Zhao,Bing Li,Wei Li

The band gap of CdS (E g  = 2.4 eV) was narrow, which made it unable to transmit short-wave sunlight through the CIGS absorber layer. Zn(O,S) thin film , prepared by doping O into ZnS, had a wider band gap, and the raw material was green and non-toxic, making it suitable as a buffer layer for solar cells. However, CBD-Zn(O,S) usually takes longer than CdS deposition. In this work, By shortening the deposition time through the fast hydrolysis of TAA . Na 3 NTA was added in the solutions to improve the quality of Zn(O,S) thin films. The effect of Na 3 NTA concentration on the complex ion contents was investigated. When Na 3 NTA was added at a concentration of 0.04 M along with TAA (0.04 M), the film had a high T% of 88.6%, E g of 3.76 eV, and a dense grain distribution. ZnS and ZnO grew at (111) and (100) crystals, respectively. Raman and XPS analyses showed the existence of Zn–S and Zn–O bonds, indicating the high crystalline quality of the Zn(O,S) thin films prepared with CBD. Finally, when the optimal concentrations of ZnSO 4 , NH 4 OH, Na 3 NTA, and TAA were 0.04 M, 0.48 M, 0.04 M, and 0.04 M, respectively, the prepared Zn(O,S) thin films could be used as a cadmium-free buffer layer for solar cells.

研究领域: 材料科学 · 光伏技术 · 薄膜技术
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MICROCHEMICAL JOURNAL · 2026 · IF 5.2

Phase transformation and roasting kinetics of scrap CIGS materials in chlorination roasting assisted by ammonium chloride

Xiang Li,Baozhong Ma,Shuhe Zhao,Zhihe Cao,Chengyan Wang,Yongqiang Chen

The kinetics of chlorination roasting of Scrap CIGS Materials was discussed. • The control steps for weight gain by roasting and chlorination of Scrap CIGS Materials were determined. • The separation rate of indium and gallium in Scrap CIGS Materials can be improved by studying the roasting kinetics. The strategy of efficient separation of valuable components from spent Copper indium gallium diselenide (CIGS) solar cell via oxidation roasting was proposed. Almost all of Se in the scrap CIGS volatilizes into the gas phase in the form of gaseous SeO 2 , copper, indium, and gallium exist in the form of mixed oxides (CIGO) in the roasting slag. To further achieve the efficient separation of indium, gallium and copper, the paper discusses the thermal behavior of indium, gallium and copper in the roasting slag during the chlorination roasting process using ammonium chloride as the chlorine source. Based on thermodynamic calculations and thermal roasting kinetics, the pyrolysis behavior of indium gallium copper mixed oxide slag during the chlorination roasting process was measured. During the chlorination roasting process of CIGO, as the roasting temperature increases, the order in which chlorides are formed is: indium chloride > gallium chloride > copper chloride. The kinetic mechanisms of indium chloride and gallium chloride during the chlorination roasting process of CIGO were determined by the FWO, KAS and Starink methods. The mean activation energies calculated by the three methods are 95.58 kJ/mol (indium chloride) and 78.87 kJ/mol (gallium chloride) respectively. The roasting temperature has a certain influence on the microstructure evolution of the CIGO chlorination combustion products. This research provides theoretical support for the comprehensive recycling of the discarded CIGS components. Download: Download high-res image (105KB) Download: Download full-size image

CAS / MDL: 12125-02-9
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