APPLIED CATALYSIS A-GENERAL
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2022
·
IF 5.723
Feilin Zhao,Chizhong Wang,Dongdong Wang,Yimeng Yin,Jie Yu,Jinchi Han,Jie Zeng,Huazhen Chang
A series of Cd-doped NiO catalysts were prepared and tested in the N 2 O catalytic decomposition reaction. In comparison with NiO, it was found that the Cd 0.04 Ni catalyst showed higher N 2 O decomposition activity in the temperature range of 300–450 °C with or without O 2 , and lower activation energy (77.8 kJ mol −1 ). The incorporation of Cd into the NiO lattice was verified by X-ray diffraction (XRD) patterns and Raman spectra. This led to the distortion of the original NiO structure and weakened the Ni-O bond. X-ray photoelectron spectroscopy (XPS) results showed that compared with NiO and CdO, Cd 0.04 Ni possessed higher Ni 2+ and Cd (n+1)+ contents, which might have been induced by the electron transfer behavior between CdO and NiO. A possible mechanism for active site regeneration and O 2 desorption over Cd 0.04 Ni was proposed. The Cd 0.04 Ni catalyst also exhibited good resistance to NO and O 2 .
研究领域:
催化化学
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环境科学
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Energy Materials
·
2021
·
IF 6.024
Tao Chen,Hongwei Ming,Baoli Zhang,Chen Zhu,Jian Zhang,Qi Zhou,Di Li,Hongxing Xin,Xiaoying Qin
Thermoelectric properties of CuSb1–xCdxSe2 (x = 0–0.08) compounds, prepared by vacuum melting, were studied at temperatures of 300–675 K. The results indicate that Cd doping causes both remarkable increase in the Seebeck coefficient and drastic drop of lattice thermal conductivity. The enhancement of thermopower originates mainly from increase of electronic density of states, while the drop of lattice thermal conductivity can be ascribed to enhanced phonon scattering by introduced impurity (dopant) atoms. As a consequence, thermoelectric figure of merit ZT is improved with a maximum ZT = 0.55 (at 675 K) being reached for CuSb0.98Cd0.02Se2, which is around 2.2-fold higher than that of the CuSbSe2 pristine compound. Our results indicate that Cd substitution is a feasible way to improve thermoelectric performance of the CuSbSe2-based system.
研究领域:
材料科学
·
热电学
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2019
·
IF 4.175
Shanshan Pan,Hui Liu,Zhili Li,Li You,Shengnan Dai,Jiong Yang,Kai Guo,Jun Luo
Due to the lone-pair-induced anharmonic rattling, InTe exhibits intrinsically ultralow thermal conductivity , which was considered as a candidate for thermoelectric application. However, the poor electrical transport properties result in low thermoelectric conversion efficiency. In this work, Cd doping in InTe have been performed with the aim to optimize the carrier concentration and increase the power factor. Furthermore, an essential enhancement of carrier mobility can be realized via prolonging the annealing time, leading to improved thermoelectric performance. As a result, the maximum thermoelectric figure of merit zT of 0.87 at 773 K has been achieved for In 0.98 Cd 0.02 Te undergoing 7 days annealing treatment (In 0.98 Cd 0.02 Te-7days), which is 67% higher than the value of InTe after 2 days annealing (InTe-2days, zT = 0.52@773 K). The average zT increases significantly from 0.26 for InTe-2days to 0.53 for In 0.98 Cd 0.02 Te-7days in the temperature range of 323–823 K. Thus, both introducing Cd dopant and regulating the annealing time have obvious effects on improving the thermoelectric performance of InTe.
研究领域:
材料科学
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热电学
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产品关联
DOI
高影响因子
ECS Journal of Solid State Science and Technology
·
2021
·Vol. 10
·期 12
·124003
·
IF 2.07
Xinli Wang,Jin Li
Doping is an effective functional modification method for improving the optical, electrical, and magnetic properties of semiconductors. Here, Cd-doped wurtzite ZnO-quantum-dot (ZQ) zero-dimensional nanomaterials were successfully prepared via liquid-phase synthesis. The experimental results showed that Cd doping can effectively shorten the bandgap, where the optical bandgap range of Cd-doping photocatalysts were 3.31–3.36 eV; in particular, the Cd5-ZQ (Cd contents of 0.5 wt%) sample reduced the bandgap from 3.39 to 3.31 eV compared to that of pure ZQ. This is consistent with the experimental results, where the simulation calculation results indicated the bandgap reduced from 3.107 to 2.912 eV after introducing Cd. Photoluminescence spectroscopy results confirmed the Cd-ion dopants efficiently capture excited electrons and further prolongs the charge lifetime. The degradation of a methylene blue solution under simulated solar light irradiation revealed that the photocatalytic properties of Cd-ZQ nanomaterial with suitable dopant concentration (Cd content 0.5 wt%) was significantly better than those of pure ZQ. The underlying mechanism involves a synergistic effect, and a reasonable and convenient strategy for uprate performance is presented.
研究领域:
材料科学
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化学
✓ 已验证
产品关联
DOI
高影响因子
Materials Today Chemistry
·
2020
·
IF 0
Xiangyan Hou,Huanhuan Liu,Yimeng Zhang,Mengpei Jiang,Long Yuan,Jingyu Shi,Changmin Hou
Cd-doped In 2 O 3 was synthesized by a facile solvothermal, template-free preparation method. The phase structure and properties were characterized by various methods. The surface of Cd-doped In 2 O 3 became coarse compared with that of pure In 2 O 3 , according to the scanning electron microscopeimages, which enhanced the ability to absorb the gas. The electron paramagnetic resonance showed that the Cd-doped In 2 O 3 can generate more defects and oxygen vacancies . By measuring the gas sensitivity, the response of Cd-doped In 2 O 3 was 1.6 times than that of pure In 2 O 3 . Thus, Cd-doped In 2 O 3 can promote gas-sensing performance compared with pure In 2 O 3 .
研究领域:
材料科学
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化学传感器
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纳米技术
✓ 已验证
产品关联
DOI
JOURNAL OF ALLOYS AND COMPOUNDS
·
2021
·
IF 5.316
Xiaogong Lv,Chengjun Zhu,Yiming Wang,Lei Wang,Jianming Shi
Kesterite Cu 2 Zn 1- x Cd x Sn(S,Se) 4 (CZCTSSe) alloy thin films were fabricated by the water-based solution approach. The influence of Cd doping on the morphology, phase structure, element valence states, optical, electrical, and device performance were comprehensively examined. Cd was clearly alloyed into the Cu 2 ZnSn(S,Se) 4 (CZTSSe) absorber layer to form the CZCTSSe compound. By controlling the relative Cd content, band gap values ( E g ) of the CZCTSSe thin films were engineered between 1.10 eV and 1.21 eV. In addition, doping with Cd led to the enhancement of grain growth as well as improvement of the conductivity and photoelectric property of the absorber layer. In particular, the CZCTSSe ( x = 0.4) absorber layer exhibited a pure phase, larger grain size, compact and uniform topography, suitable band gap, Cu-poor and (Cd+Zn)-rich composition, higher conductivity and better photoelectric response. Power conversion efficiency (PCE) is improved from 4.37% of the CZCTSSe ( x = 0.0) device to 5.16% of CZCTSSe ( x = 0.4) device, and the increases of short-circuit current ( J sc ) achieved to 8.94 mA/cm 2 . The encouraging results suggest that doping of Cd is an effective way to improve CZTSSe film properties and promote device efficiency.
研究领域:
材料科学
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光伏技术
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ELECTROANALYTICAL CHEMISTRY
·
2019
·
IF 3.218
Yuan Dang,Xiaojiao Wang,Rongrong Cui,Shuangli Chen,Yuanzhen Zhou
A sensitive and selective electrochemical sensor based on poly-(nicotinic acid) (PNA) film and Cd-doped ZnWO 4 (Cd-ZnWO 4 ) nanoneedles organic-inorganic nanocomposite modified carbon paste electrodes (PNA(ii)/Cd(0.02)-ZnWO 4 /CPE) is successfully constructed and applied to study the catalytic oxidation of hydroquinone (HQ) and catechol (CC). X-ray diffraction (XRD), scanning electron microscope (SEM) and electrochemical techniques are used to characterize the composition , morphology and electrochemical properties of the modified electrode . The sensor exhibits strong electrocatalytical activity towards the oxidation of HQ and CC for the higher specific surface area of Cd-ZnWO 4 nanoneedles, fluent electron transfer capacity and the synergistic effect of inorganic Cd-ZnWO 4 and organic PNA. Wide linear ranges are obtained as 1–56 μM for HQ and 2–35 μM for CC, with the detection limits of 0.17 μM and 0.03 μM, in the differential pulse voltammetry (DPV) determination of HQ and CC, respectively. Satisfactory repeatability, stability and anti-interference performance are also achieved on PNA (ii)/Cd(0.02)-ZnWO 4 /CPE. Meanwhile, the proposed sensor realizes the detection of CC and HQ spiked in local tap water samples successfully.
研究领域:
分析化学
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材料科学
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2022
·
IF 10.383
Xiangbao Yuan,Haiyun Li,Jing Fan,Lin Zhang,Feng Ran,Menglei Feng,Peiyuan Li,Weixiang Kong,Shijian Chen,Zhigang Zang,Shuangpeng Wang
The effect of substitutional metal dopants in NiOx on the structural and electronic structures is of great interest, particularly for increasing the p-type conductivities as a hole transport layer (HTL) applied in perovskite solar cells (PSCs). In this paper, experimental fabrications and density functional theory calculations have been carried out on Cd-doped NiOx films to examine the effect of divalent doping on the electronic and geometric structures of NiOx. The results indicate that divalent Cd dopants reduced the formation energy of the Ni vacancy (VNi) and created more VNi in the films, which enhanced the p-type conductivity of the NiOx films. In addition, Cd doping also deepened the valence band edge, reduced the monomolecular Shockley–Read–Hall (SRH) recombination losses, and promoted hole extraction and transport. Hence, the PSCs with Cd:NiOx HTLs manifest a high efficiency of 20.47%, a high photocurrent density of 23.00 mA cm–2, and a high fill factor of 79.62%, as well as negligible hysteresis and excellent stability. This work illustrates that divalent elements such as Cd, Zn, Co, etc. may be potential dopants to improve the p-type conductivity of the NiOx films for applications in highly efficient and stabilized PSCs.
研究领域:
材料科学
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能源科学
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计算化学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
International Journal of Applied Ceramic Technology
·
2023
·Vol. 21
·期 2
·1220-1230
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IF 2.1
Yi Qin,Mengxue Wang,Xiaohan Li,Yajuan Zhang,Shenglai Tang,Jianfeng Zhu,Ting Zhao
SnSe-based materials have attracted widespread attention in thermoelectrics due to their outstanding thermoelectric performance. However, the pristine and unmodified polycrystalline SnSe reveals poor electrical properties. Doping and constructing nanostructured composite architectures to produce energy filtering effect proved to be an effective method to strengthen thermoelectric performance. In this study, Ti 3 C 2 /Sn 0.98 Cd 0.02 Se composites are successfully fabricated by the solvothermal method combined with the electrostatic self-assembly method and spark plasma sintering. The phase interface introduced by incorporating Ti 3 C 2 into Sn 0.98 Cd 0.02 Se can effectively filter low-energy carriers due to its generation of energy barriers, thereby the Seebeck coefficient of x wt% Ti 3 C 2 /Sn 0.98 Cd 0.02 Se x = (0.05, 0.5, 1) samples is better than that of the pristine Sn 0.98 Cd 0.02 Se over the whole temperature range. Meanwhile, high conductivity was also obtained in 1 wt% Ti 3 C 2 /Sn 0.98 Cd 0.02 Se sample so that the high power factor of 3.31 μWcm −1 K − 2 was acquired at 773 K. Ultimately, a peak ZT value of 0.41 was obtained at 773 K, compared with pristine Sn 0.98 Cd 0.02 Se, and the thermoelectric performance improved by 24%. This study offers an available approach to efficiently enhance the thermoelectric properties of polycrystalline SnSe-based materials.
研究领域:
材料科学
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热电学
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纳米技术
✓ 已验证
DOI
高影响因子
PHYSICA SCRIPTA
·
2024
·Vol. 99
·期 8
·085969
·
IF 2.6
Renzhong Xue,Xiaosong Liu,Liuyang Zhao,Xiang Zhu
In this study, Na1/3(Ca1−xCdx)1/3Bi1/3Cu3Ti4O12 (x = 0, 0.2, 0.4, 0.8, and 1.0) ceramics were prepared via solid-state method. Effects of substitution of Ca2+ with Cd2+ on the microstructure, dielectric response, and non-Ohmic properties of Na1/3Ca1/3Bi1/3Cu3Ti4O12 ceramics were studied systematically. Results showed that all samples possessed single perovskite phase, in which grain size increased with the increase in Cd2+ doping content. Energy band gaps and activation energy first increased and then decreased, achieving their maxima (4.22 and 0.642 eV, respectively) at x = 0.2. Besides, dielectric constant of doped samples increased with the decrease in dielectric loss in frequency range of 40–106 Hz. Moreover, improvement in non-Ohmic properties was also observed with Cd2+ doping. The optimal dielectric properties (dielectric constant of ∼12,500, dielectric loss of ∼0.032 at 10 kHz, nonlinear coefficient of ∼3.42, and breakdown strength of ∼2.7 kV·cm−1) were achieved at x = 0.2. Dielectric response mechanism of ceramics followed internal barrier layer capacitor model while nonlinear ohmic properties were derived from Schottky barrier structure. Dielectric relaxation peaks at high temperatures (120 °C–220 °C) were associated with grain boundaries. Therefore, partial substitution of Ca2+ with Cd2+ can improve simultaneously dielectric and non-Ohmic properties of Na1/3Ca1/3Bi1/3Cu3Ti4O12 ceramics, which is conducive to their application in high-energy-density storage capacitors and varistors.
研究领域:
材料科学
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电子工程
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产品关联
DOI
高影响因子
CHEMISTRY-A EUROPEAN JOURNAL
·
2022
·Vol. 28
·期 46
·e202200877
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IF 5.02
Junfeng Qu,Shuhong Xu,Yiping Cui,Chunlei Wang
Graphical Cd-doped Cs 3 Cu 2 I 5 was synthesized by room-temperature grinding. [CuI 4 ] and [CdI 4 ] tetrahedrons act as photoluminescent centers separately, resulting in the emission colour manipulated by not only Cd feeding amount but also excitation wavelength. The as-prepared Cd-doped Cs 3 Cu 2 I 5 was made into anti-counterfeiting ink and printed on paper. The pattern shows different colours when the excitation wavelength increases from 310 nm to 330 nm. With the development of intellectual properties, concern about advanced anti-counterfeiting is accumulating, which conventional single-modal luminescence can no longer satisfy. As one of rapidly developing 0D materials, copper-based perovskite shows great potential to realize multiple luminescent centers for complex emissions. In this work, Cd was doped into Cs 3 Cu 2 I 5 and showed resultant emission at 560 nm which surprisingly showed a red-shifted excitation peak from that of intrinsic self-trapped emission, resulting in excitation-wavelength dependent emission. When the excitation wavelength increased from 290 nm to 330 nm, the emission of Cd-doped Cs 3 Cu 2 I 5 changed from deep blue to cold white and finally yellow. Afterwards, Cd-doped Cs 3 Cu 2 I 5 was mixed with polystyrene to prepare anti-counterfeiting ink for silk-screen printing. Meanwhile, Cd-doped Cs 3 Cu 2 I 5 maintains outstanding stability after doping, no matter under ambient, continuous UV radiation or high-temperature environment. The intensity can be almost totally recovered after heating-and-cooling cycles. This study lays groundwork for future research into multiple luminescent center manipulation in 0D materials.
研究领域:
材料科学
·
光电子学
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纳米技术
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防伪技术
✓ 已验证
DOI
高影响因子
MICROCHIMICA ACTA
·
2024
·Vol. 191
·期 5
·1-12
·
IF 5.3
Wei Zhanxiang,Qin Cong,Yang Xuhui,Zhu Linghao,Zhao Xiaoyan,Cao Jianliang,Wang Yan
Abstract The detection of hazardous CO gas is an important research content in the domain of the Internet of Things (IoT). Herein, we introduced a facile metal-organic frameworks (MOFs)-templated strategy to synthesize Cd-doped Co 3 O 4 nanosheets (Cd-Co 3 O 4 NSs) aimed at boosting the CO-sensing performance. The synthesized Cd-Co 3 O 4 NSs feature a multihole nanomeshes structure and a large specific surface area (106.579 m 2 ·g -1 ), which endows the sensing materials with favorable gas diffusion and interaction ability. Furthermore, compared with unadulterated Co 3 O 4 , the 2 mol % Cd-doped Co 3 O 4 (2% Cd-Co 3 O 4 ) sensor exhibits enhanced sensitivity (244%) to 100 ppm CO at 200 °C and a comparatively low experimental limit of detection (0.5 ppm/experimental value). The 2% Cd-Co 3 O 4 NSs show good selectivity, reproducibility, and long-term stability. The improved CO sensitivity signal is probably owing to the stable nanomeshes construction, high surface area, and rich oxygen vacancies caused by cadmium doping. This study presents a facile avenue to promote the sensing performance of p-type metal oxide semiconductors by enhancing the surface activity of Co 3 O 4 combined with morphology control and component regulation. Graphical Abstract
研究领域:
材料科学
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传感器技术
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纳米技术
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环境监测
·
物联网(IoT)
✓ 已验证
产品关联
DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）