CHEMPHYSCHEM
·
2020
·Vol. 21
·期 5
·397-405
·
IF 3.144
Feiyu Zhao,Xue Luo,Lixiang Liu,Jianhang Lv,Xianping Fan,Xvsheng Qiao,Yang Xu,Lorenz Kienle,Xianghua Zhang,Guodong Qian
Graphical Improved responsivity : GeSe micro-sheets and micro-belts were synthesized by a chemical orientation growth method in 1-octadecene solvent and oleic acid solvent, respectively. The photodetectors based on single micro-belt showed a broadband spectral photoresponse with high responsivity (5562 A/W) and detectivity (3.01×10 12 Jones). It demonstrates significant application potential in the visible and NIR photodetection. GeSe micro-sheets and micro-belts have been synthesized by a facile one-pot wet chemical method in 1-octadecene solvent and oleic acid solvent, respectively. The adsorption of more oleic acid molecules on the (002) plane promoted growth along [010] direction of the GeSe micro-belts and limited carrier transport in this direction, resulting in higher carrier concentration and mobility of the GeSe micro-belts. The performance of the photodetectors based on the single GeSe micro-sheet and the single GeSe micro-belt was investigated under illumination at 532 nm, 980 nm and 1319 nm. Both, photodetectors based on a single GeSe micro-sheet and a single GeSe micro-belt, exhibit a high photoresponse, short response/recovery times, and long-term durability. Moreover, the photodetector based on a single GeSe micro-belt displays a broadband response with a high responsivity (5562 A/W at 532 nm, 1546 A/W at 980 nm) and detectivity (3.01×10 12 Jones at 532 nm, 8.38×10 11 Jones at 980 nm). These excellent characteristics render single GeSe micro-belts very interesting for use as highly efficient photodetectors, especially in the NIR region.
研究领域:
材料科学
·
光学工程
·
纳米技术
✓ 已验证
DOI
高影响因子
Nanophotonics
·
2019
·Vol. 9
·期 2
·327-336
·
IF 6.908
Yuting Zhao,Shuaiwen Gan,Leiming Wu,Jiaqi Zhu,Yuanjiang Xiang,Xiaoyu Dai
Germanium selenide (GeSe) nanosheets are stable and inexpensive and considered to have a great potential for photovoltaic applications, however we have demonstrated that GeSe nanosheets are also promising for sensing technology, in this paper. By spin-coating the GeSe nanosheets on the surface of noble metal (Au), we have obtained a surface plasmon resonance (SPR) sensor with significantly enhanced sensitivity, and the performance of the sensor is closely related to the thickness of the GeSe film. By detecting different refractive index solutions, we have obtained the optimized sensitivity with 3581.2 nm/RIU (which is nearly 80% improvement compared to traditional SPR sensors) and figure of merit with 14.37 RIU −1 . Moreover, the proposed SPR sensor was vastly superior in sensing Pb 2+ heavy metal ions after coating it with chitosan and GeSe composite. A maximum sensitivity of 30.38 nm/μg/l has been verified, which is nearly six times better than that of conventional SPR sensor. Our results demonstrated that GeSe nanosheets overlayer with modified SPR sensor has its great potential in heavy metal detection and chemical-specific molecular identification.
研究领域:
纳米技术
·
光学
·
传感器
·
环境科学
✓ 已验证
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2022
·
IF 5.532
Siming Luo,Yang Yu,Ningyan Cheng,Xiang Qi,Siwei Luo,Yundan Liu,Jianxin Zhong
Two-dimensional (2D) materials display excellent photoelectric behaviors which makes them promising candidates for photodetectors and related fields. Germanium selenide (GeSe), as an advanced photosensitive 2D material, owns remarkable photo absorption and fast carrier mobility . However, its photo-electron conversion efficiency suffers from high carrier recombination. Building heterojunctions is one effective strategy to facilitate the separation efficiency of photoinduced electron-hole. Here, hybridization of GeSe and CdS is realized and prepared by assembling CdS nanodots on the electrodeposited GeSe film in an ethanol solution, to form a p-n type heterogeneous film on the ITO substrate. A PEC-type photodetector is fabricated based on the GeSe/CdS heterogeneous film, which displays obviously strengthened photocurrent density and photoresponsivity. Meanwhile, such GeSe/CdS PEC photodetector exhibits the capability of self-powered photoresponse and good stability. This heterogeneous structure paves an accessible and practical way for promoting GeSe hybrids toward high-efficient photoelectric conversion devices.
研究领域:
材料科学
·
光电技术
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2022
·
IF 6.371
Zeqing Hu,Xiaolong Liang,Deming Dong,Kairui Zhang,Zhou Li,Jiming Song
The potential thermoelectric Cu 2 GeSe 3 is limited by the unfavorable exorbitant electrical conductivity and the subsequent high electrical thermal conductivity . In this regard, we highlight a compensatory compositing strategy to synergistically optimize its thermoelectric properties by adding GeSe second-phase. Experimental results demonstrated that the GeSe additive compensated the carrier concentration and mobility to some extent, which suppressed the exorbitant electrical conductivity and led to much reduced electrical thermal conductivity and the final low thermal conductivity in (GeSe) x (Cu 2 GeSe 3 ) 1–x composites. Meanwhile, due to the decreased carrier mobility , the GeSe additive could also increase the effective mass of the Cu 2 GeSe 3 matrix, which significantly enhanced the Seebeck coefficient and power factor. Finally, with the synergistically optimized electrical and thermal transport properties of Cu 2 GeSe 3 via GeSe addition, the final figure-of-merit ZT values of composites were significantly improved. The peak ZT of the average of three times trials of 0.49 was achieved at 723 K for (GeSe) 0.02 (Cu 2 GeSe 3 ) 0.98 composite, which was 188% higher than its pristine counterpart.
研究领域:
材料科学
·
热电学
·
能量转换
·
固体物理
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry A
·
2018
·Vol. 6
·期 18
·8215-8220
·
IF 9.931
Mingtao Yan,Xiaojian Tan,Zhiwei Huang,Guoqiang Liu,Peng Jiang,Xinhe Bao
Rhombohedral GeSe is a promising p-type thermoelectric material with a multivalley band structure. However, its figure of merit ZT, especially average ZT is still relatively low compared with the state-of-art thermoelectric materials. Here, we show that alloying with AgSbTe2 can synergistically optimize the electronic and thermal transport properties of GeSe. On one hand, alloying can tune the crystal field and promote the band convergence between the lower light valence band and higher heavy valence band. The rising light valence band maximum increases both the density of state effective mass and carrier mobility, leading to a significantly improved power factor. On the other hand, the phonon scattering is also enhanced by the alloying effect, resulting in a low lattice thermal conductivity of 0.7 W m−1K−1 at 754 K. A peak ZT of ≈1.0 at 754 K was achieved in GeSeAg0.2Sb0.2Te0.4 and more importantly, the ZTavg (0.65) between 301 K and 754 K was improved by more than 56% compared to GeSeAg0.2Sb0.2Se0.4 (ZTavg = 0.41).
研究领域:
材料科学
·
热电学
·
凝聚态物理
·
能量转换材料
✓ 已验证
DOI
高影响因子
INSTRUMENTATION SCIENCE & TECHNOLOGY
·
2022
·
IF 1.509
Ze-Ying Hao,Yao Liu,Zhou-Hao Zhao,Qi Wang
Although surface plasmon resonance (SPR) methods are frequently employed due to their remarkable advantages such as reduced sample requirements, they confront a significant challenge in terms of sensitivity improvement. GeSe is an appropriate material for resolving this issue. According to the theoretical basis of the research, GeSe is a two-dimensional material which is a direct band gap semiconductor that may be utilized to promote electron transport and stimulate greater SPR phenomena. The first use of GeSe in an optical fiber sensor is reported in this study. A U-shaped optical fiber-GeSe-Au sensor is proposed. As a two-dimensional material with comparable physical characteristics to GeSe, MoS2 is compared to GeSe to characterize its influence upon the sensitivity. The sensitivity of fiber-GeSe-Au sensor is 7398.1 nm/refractive index unit (RIU), which is nearly twice as sensitive as a gold film SPR sensor and 1.5 times as sensitive as a sensor utilizing MoS2 nanosheets with the same structure. This study introduces a novel approach for enhancing the sensitivity, which gives a new option for monitoring biological substances at low concentrations with high sensitivity and stability and demonstrates that GeSe nanosheets have significant promise for future applications.
研究领域:
材料科学
·
光学工程
·
生物传感
✓ 已验证
产品关联
DOI
高影响因子
APPLIED SURFACE SCIENCE
·
2024
·
IF 6.3
Jing Zhou,Li Gao,ShengWen Yang,Zhenming Qu,Yu Cao,Jinbo Pang,Jian Ni,Jianjun Zhang
Germanous selenide (GeSe) is an emerging photoactive layer material due to its excellent photoelectric properties, low cost and environmental friendliness. However, severe carrier recombination in the GeSe photoactive layer remains a significant factor limiting the conversion efficiency of GeSe solar cells. In this study, the GeSe photoactive layers were doped copper chloride (CuCl 2 ) solution, enabling the distribution of Cu 2+ ions throughout the layer, primarily accumulating on the GeSe grain surface. Its impact on the carrier transport in the GeSe photoactive layer was studied by ultraviolet photoelectron spectroscopy, kelvin probe force microscopy, and transient photovoltage. The doping can not only increase the Fermi level of the GeSe, but also adjust the local built-in potential on grain boundaries, so that the charge carriers can be redistributed in the three-dimensional space. Notably, at the grain boundaries, the hole flow before doping changes to electron flow, effectively reduces the recombination probability of charge carriers, and increases the carrier lifetime from 200.23 to 374.57 μs. As a result, the conversion efficiency after processing with CuCl 2 is increased from 1.98 % to 3.01 %. This study provides a reference for understanding the carrier kinetics in GeSe solar cells to improve the photoelectric conversion performance of the device.
研究领域:
材料科学
·
光伏技术
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
Nanoscale
·
2019
·Vol. 11
·期 9
·3968-3978
·
IF 6.97
Binwen Chen,Yurong Ruan,Jianmin Li,Weihuang Wang,Xinlian Liu,Huiling Cai,Liquan Yao,Jian-Min Zhang,Shuiyuan Chen,Guilin Chen
GeSe is considered as a potential absorber material for thin film solar cells owing to its ideal band gap, strong light absorption, remarkable air durability, Earth-abundance and non-toxic constituents. However, the high vapor pressure of GeSe at a temperature below its melting point makes it difficult to synthesize a high-quality GeSe film. To alleviate this limitation, in this work, a thermal evaporation combining a novel sandwiching post-annealing method was introduced to deposit high quality GeSe thin films with (100)-orientation. The self-assembling mechanism of the highly oriented GeSe film was carefully investigated by the systematic experiments and confirmed by the lowest total energy of the (100) crystal plane. Finally, the fully-inorganic, low-cost and non-toxic planar device with the superstrate configuration of FTO/TiO2/GeSe/carbon/Ag was also successfully fabricated. Notably, as a result, an impressive open circuit voltage (VOC) of 340 mV (maximum: 456 mV) was achieved, which is the highest VOC of GeSe solar cells reported so far. Furthermore, through current–voltage, capacitance–voltage profiling and drive level capacitance profiling measurements, it was demonstrated that the limiting factors of the GeSe solar cell performance were the narrow depletion width (138 nm) and the drastic recombination at the TiO2/GeSe interface.
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2023
·
IF 6.2
Yongfeng Bu,Hongyu Zhang,Jinzhi Hu,Wenya Jiang,Qin Kang,Shihao Wang,Yuman Li,Shengda Tang,Hongyu Liang
Metallic selenides are considered as a promising class of alternative anodes for sodium ion batteries due to the high capacity conferred by their hybrid sodium storage mechanism. However, the low reversible volume expansion induced by larger size sodium ion storage greatly limits their cycle life, theoretical capacity mining and electrode thickness enhancement. Herein, a germanium selenide/carbon nanofibers (GeSe/CNFs) sodium storage anode is first reported by taking advantage of the encapsulation and dispersion of electrostatic spinning technology, i.e., GeO 2 is first mixed with polyacrylonitrile and electrospun to form a wrapped structure, followed by in situ pre-oxidation, carbonization, and selenization. For the optimized electrode, it delivers a high capacity up to 567 mAh g −1 based on the mass of GeSe (320 mAh g −1 based on GeSe/CNFs), reaching > 80% of its theoretical capacity, with a > 2300 cycles cycling stability at 1.0 A g −1 . In addition, its capacity barely decays after 700 cycles at near commercial electrode thickness (115 µm, the capacity retention > 47–63% even at the ultrahigh thickness of 187–219 µm). This study opens up new possibilities for the development of Se-based sodium storage anode materials with long life, high capacity and ultra-thick electrode that are expected to meet practical needs.
研究领域:
材料科学
·
能源存储
✓ 已验证
产品关联
DOI
高影响因子
Science Bulletin
·
2023
·
IF 18.9
Ziqi Zhou,Tao Shen,Pan Wang,Quanlin Guo,Qinghe Wang,Chenjun Ma,Kaiyao Xin,Kai Zhao,Yali Yu,Biao Qin,Yue-Yang Liu,Juehan Yang,Hao Hong,Kaihui Liu,Can Liu,Hui-Xiong Deng,Zhongming Wei
Polarization-sensitive photodetectors, with the ability of identifying the texture-, stress-, and roughness-induced light polarization state variation, displace unique advantages in the fields of national security, medical diagnosis, and aerospace. The utilization of in-plane anisotropic two-dimensional (2D) materials has led the polarization photodetector into a polarizer-free regime, and facilitated the miniaturization of optoelectronic device integration. However, the insufficient polarization ratio (usually less than 10) restricts the detection resolution of polarized signals. Here, we designed a sub-wavelength array (SWA) structure of 2D germanium selenium (GeSe) to further improve its anisotropic sensitivity, which boosts the polarized photocurrent ratio from 1.6 to 18. This enhancement comes from the combination of nano-scale arrays with atomic-scale lattice arrangement at the low-symmetric direction, while the polarization-sensitive photoresponse along the high-symmetric direction is strongly suppressed due to the SWA-caused depolarization effect. Our mechanism study revealed that the SWA can improve the asymmetry of charge distribution, attenuate the matrix element in zigzag direction, and the localized surface plasma, which elevates the photo absorption and photoelectric transition probability along the armchair direction, therefore accounts for the enhanced polarization sensitivity. In addition, the photodetector based on GeSe SWA exhibited a broad power range of 40 dB at a near-infrared wavelength of 808 nm and the ability of weak-light detection under 0.1 LUX of white light (two orders of magnitude smaller than pristine 2D GeSe). This work provides a feasible guideline to improve the polarization sensitivity of 2D materials , and will greatly benefit the development of polarized imaging sensors.
研究领域:
光电子学
·
纳米光子学
·
偏振成像
·
二维材料
·
光电探测器
·
半导体器件
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）