NANOTECHNOLOGY
·
2024
·Vol. 35
·期 38
·385705
·
IF 2.9
Yongguang Xiao,Lisha Yang,Yong Jiang,Siwei Liu,Gang Li,Jun Ouyang,Minghua Tang
Lu doped Hf0.5Zr0.5O2 (HZO) ferroelectric films were prepared on Pt/TiN/SiO2/Si substrate by chemical solution deposition method, and an interfacial engineering strategy for improving the ferroelectric property was explored by capping the Lu doped HZO films with a cerium oxide layer. Compared with the Lu doped HZO film without the CeOx coating layer, the Lu doped HZO film with the CeOx coating layer has a larger remanent polarization (2Pr = 34.72 µC cm−2) and presents weaker wake-up behavior, which result from the higher orthogonal phase ratio and the lower oxygen vacancy of the CeOx coated Lu doped HZO film. In addition, the CeOx coating can remarkably improve the fatigue resistance and retention performance of the Lu doped HZO films. It is hoped that the results can provide an effective approach for the realization of high-performance and highly reliable hafnium oxide based ferroelectric thin films.
研究领域:
材料科学
·
铁电材料
·
薄膜
✓ 已验证
DOI
高影响因子
ACS Applied Electronic Materials
·
2025
·
IF 4.7
Tingting Jia,Pengcheng Xiao,Yi Gong,Xinde Wang,Rui Li,Yujie Long,Hongyang Zhao,Quansheng Guo,Zhenxiang Cheng
Ultralow-power logic devices are the future of electronics, achieving maximum power efficiency with minimal input power consumption. One of the biggest challenges in electronics today is tackling the issues of short-channel effects and high operating voltages, which are resolved by integrating ferroelectric negative capacitors into a conventional gate stack of two-dimensional field-effect transistors. As an excellent noncentral symmetric adjacent phase crystalline ferroelectric material, Y: Hf0.5Zr0.5O2 (Y-HZO) is compatible with complementary metal oxide semiconductor technology. It is the most promising candidate for ferroelectric negative capacitance. This study marks the first successful growth of high-quality Y-HZO on a large silicon substrate using the sol–gel method. Ferroelectric field-effect transistors (FeFET) were fabricated with stacked ferroelectric Y-HZO and integrated into a molybdenum disulfide channel to achieve steep switching and low power consumption. The FeFET demonstrated a threshold voltage of 8.8 V, a subthreshold swing (SS) of 24.95 mV/dec, and a hysteresis window of 2 V.
研究领域:
材料科学
·
半导体器件
·
纳米电子学
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铁电材料
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低功耗电子学
✓ 已验证
产品关联
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2026
·
IF 6
Hao-Nan Liu,Jian-Qing Dai,Guang-Cheng Zhang,Jin-Song Li
In the present work, Hf 0.5 Zr 0.5 O 2 (HZO) ferroelectric thin films were deposited on Pt/Ti/SiO 2 /Si substrates by chemical solution deposition (CSD), and the effects of annealing temperature and ZrO 2 interlayer insertion on their phase structure and ferroelectric properties were systematically investigated. The results show that a higher annealing temperature promotes the formation of the ferroelectric orthorhombic (o) phase, with the film annealed at 800 °C reaching a remanent polarization (P r ) of 26.51 μC/cm 2 . Building on this, a ZrO 2 interlayer strategy was adopted to optimize the ferroelectric performance further. Rietveld refinement and HAADF-STEM analyses reveal that the multilayer architecture, formed by alternately inserted ZrO 2 interlayers, provides additional nucleation sites and introduces interfacial stress, thereby inducing the preferential crystallization of the o phase. The multilayer film reaches a remanent polarization as high as 63.05 μC/cm 2 , outperforming previously reported CSD-prepared HfO 2 -based ferroelectric films, and shows no obvious fatigue after 10 7 cycles. This work offers a low-cost and reliable route to high-performance HfO 2 -based ferroelectric films and holds promise for nonvolatile memory applications.
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DOI
高影响因子
ACS Applied Materials & Interfaces
·
2026
·
IF 7.8
Rui Tang,Luanxu Zhu,Zihe Wang,Yongming Hu,Yunbin He,Haoxiang Ma,Omer Rauf,Usman Rauf,Qingfeng Zhang
While ferroelectric-enhanced Ga2O3-based self-powered solar-blind ultraviolet photodetectors (SBUVPDs) can offer high-performance detection of 200–280 nm wavelength due to efficient carrier separation, their accuracy is often compromised by the narrow bandgap (<4 eV) of traditional ferroelectric materials, which makes them susceptible to interference from light signals beyond the SBUV region. To address this issue, we developed a narrow-band self-powered SBUVPD based on Hf0.5Zr0.5O2/(Sn0.1Ga0.9)2O3 heterojunction thin films. This device benefits from a strong ferroelectric depolarization field throughout the whole Hf0.5Zr0.5O2 thin film, and a type-II band alignment at the interfaces of Hf0.5Zr0.5O2 and (Sn0.1Ga0.9)2O3, yielding excellent photoresponse performances with a high responsivity of 25.10 mA/W, large detectivity of 4.63 × 1011 Jones, and fast rise/decay time of 201/325 ms at 0 V bias. Crucially, the ultrawide bandgap (5.45 eV) of Hf0.5Zr0.5O2 confines the cutoff wavelength to within 280 nm, ensuring high detection accuracy. The overall performances of this device outperform those of the most recently reported SBUVPDs utilizing Ga2O3 materials, demonstrating that integrating ultrawide-bandgap ferroelectric layers is an effective strategy for creating high-property, narrow-band SBUVPDs.
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产品关联
DOI
PubMed
高影响因子
Advanced Materials Interfaces
·
2022
·Vol. 9
·期 12
·2101863
·
IF 6.389
Yuan Liu,Xiaokun Wen,Wenyu Lei,Li Yang,Pengzhen Zhang,Yuhui Zhang,Haixin Chang,Wenfeng Zhang
Besides the widely investigated potential as alternative to silicon in microelectronics, semiconducting 2D transition metal dichalcogenides (TMDs) also show appealing prospects in thin film transistors (TFTs)-based applications, while still suffer from insufficient demonstration. Herein, the authors systematically report high-performance and low-power chemical vapor deposition-grown polycrystalline molybdenum ditelluride (MoTe 2 ) TFTs with solution-processed ternary Hf 0.5 Zr 0.5 O 2 /HfAlO 2 high-k dielectric. Benefitting from the optimized high quality HfAlO 2 film synthesis and proper postannealing treatment, the constructed MoTe 2 TFTs exhibit a high mobility ≈27.24 cm 2 V −1 S −1 , a current on/off ratio ≈6.43 × 10 5 , threshold voltage ≈−3.27 V, and subthreshold swing (SS) value ≈152.4 mV dec −1 , respectively. Moreover, by supplementing another solution-processed layer of ferroelectric Hf 0.5 Zr 0.5 O 2 to form double layer of HfAlO 2 /Hf 0.5 Zr 0.5 O 2 dielectric, the device performance can be further improved with an ignorable hysteresis, increased mobility of ≈55.53 cm 2 V −1 S −1 , and significantly reduced SS value of ≈110.16 mV dec −1 , respectively. The current investigation offers a feasible strategy to fabricate high-performance and low-power MoTe 2 TFTs for potential TMDs-based TFTs applications.
研究领域:
材料科学
·
半导体器件
·
薄膜技术
·
纳米电子学
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）