BiVO4 is a promising photoanode material for photoelectrochemical water splitting, but its actual activity is hindered by the high energy surface states. Here, we report that In3+ can be used as a dopant to substitute the partial sites of Bi3+ in BiVO4 for modifying the surface states and improving the water oxidation activity of a BiVO4 nanoflake film. Among the In3+-doped BiVO4 film photoanodes, the 7% In3+-doped BiVO4 film shows optimal photoelectrochemical water oxidation activity. At 1.23 V vs. RHE, the 7% In3+-doped BiVO4 photoanode exhibits a photocurrent density of 1.56 mA cm−2 in 0.1 M Na2SO4, which is over 200% greater than that of the undoped BiVO4 photoanode. In3+-doping did not change the morphology, phase and band gap of BiVO4 obviously, but resulted in a positive shift of the flat band position and higher surface charge separation efficiency for water oxidation. Density functional theory calculations indicate that the surface energy of BiVO4 decreased after In3+-doping that involved more unsaturated electrons of the Bi atom in the Bi–O bonds, thus reducing the amount of exposed unsaturated Bi atoms and broken Bi–O bonds. Therefore, the enhanced water oxidation activity on the In3+-doped BiVO4 photoanode can be ascribed to In3+-doping that passivated the surface states of BiVO4 and thus inhibited the surface charge recombination.
Hong Li,Junfeng Zheng,Yanpeng Dai,Dongying Li,Xiangting Zhang
CdSiO 3 , with its distinctive crystal structure, has become a subject of considerable interest as a potential silicate host for long persistent luminescence (LPL) phosphors. However, in most cases, impurity phases in the host adversely affect the persistent luminescence (PersL) performance. Furthermore, there is still a lack of insightful understanding regarding the role of non-rare-earth (non-RE) In 3+ ions in the enhanced blue PersL of CdSiO 3 . Here, pure-phase monoclinic CdSiO 3 phosphor is synthesized through a solid-state reaction method and the intense blue PersL is achieved by aliovalent doping of In 3+ . Combining experimental results with theoretical calculation, we reveal that the intrinsic defects of O and Cd vacancies in CdSiO 3 are the trap centers for excited electrons and holes, respectively. In 3+ doping adjusts the distribution and increases the density of intrinsic defect-related traps, thus producing the intense blue PersL in CdSiO 3 :In 3+ . Moreover, the generality of In 3+ in enhancing the PersL properties is validated in CdSiO 3 :Mn 2+ ,In 3+ and CdSiO 3 :RE 3+ ,In 3+ (RE = Tb, Dy, Pr, Sm, Eu) phosphors, enriching the spectrum of PersL emission colors. Encouraged by the outstanding optical properties of CdSiO 3 :Mn 2+ ,In 3+ , we demonstrate dual-mode information storage-reading and dynamic information encryption applications. This advancement opens new avenues for the application of optical information security. This work emphasizes the key role of In 3+ in adjusting the distribution and increasing the density of intrinsic defect-related traps. Consequently, it reveals a clear mechanism for enhancing PersL through In 3+ doping and expands the range of LPL phosphors with broad spectral selectivity.
Graphical Tunable nanocrystals . Ternary I-III-VI 2 (AgInS 2 ) colloidal nanocrystals (NCs) with precise control of the composition (from In 3+ doping to ternary composition) and good NIR fluorescence performance (800–1000 nm) have been synthesized by facile low-temperature in situ conversion of colloidal Ag 2 S nanoparticles. In 3+ ions were inserted into the crystal lattice of Ag 2 S NCs at a relatively low temperature as dopant with ternary AgInS 2 NCs obtained at a higher temperature following a phase transition (see figure). Focusing on ternary I-III-VI 2 colloidal nanocrystals (NCs) synthesized with precise control of the composition (from doping to ternary composition) and NIR fluorescence performance, monodisperse binary In 3+ -doped Ag 2 S NCs and ternary AgInS 2 NCs have been achieved successfully by facile low-temperature in situ conversion of colloidal Ag 2 S nanoparticles. In 3+ ions were inserted into the crystal lattice of Ag 2 S NCs at a relatively low temperature as dopant and ternary AgInS 2 NCs were obtained at a higher temperature following a phase transition. These doped Ag 2 S and AgInS 2 NCs based on different indium precursor concentrations were explored with respect to the position and intensity of the near-infrared photoluminescent emission at different doping levels and crystal phase evolution.
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