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Journal of Materials Chemistry A · 2018 ·Vol. 6 ·期 22 ·10456-10465 · IF 9.931

In3+-doped BiVO4 photoanodes with passivated surface states for photoelectrochemical water oxidation

Xiaohui Zhong,Huichao He,Minji Yang,Gaili Ke,Zongyan Zhao,Faqin Dong,Bowen Wang,Yaqi Chen,Xianying Shi,Yong Zhou

BiVO4 is a promising photoanode material for photoelectrochemical water splitting, but its actual activity is hindered by the high energy surface states. Here, we report that In3+ can be used as a dopant to substitute the partial sites of Bi3+ in BiVO4 for modifying the surface states and improving the water oxidation activity of a BiVO4 nanoflake film. Among the In3+-doped BiVO4 film photoanodes, the 7% In3+-doped BiVO4 film shows optimal photoelectrochemical water oxidation activity. At 1.23 V vs. RHE, the 7% In3+-doped BiVO4 photoanode exhibits a photocurrent density of 1.56 mA cm−2 in 0.1 M Na2SO4, which is over 200% greater than that of the undoped BiVO4 photoanode. In3+-doping did not change the morphology, phase and band gap of BiVO4 obviously, but resulted in a positive shift of the flat band position and higher surface charge separation efficiency for water oxidation. Density functional theory calculations indicate that the surface energy of BiVO4 decreased after In3+-doping that involved more unsaturated electrons of the Bi atom in the Bi–O bonds, thus reducing the amount of exposed unsaturated Bi atoms and broken Bi–O bonds. Therefore, the enhanced water oxidation activity on the In3+-doped BiVO4 photoanode can be ascribed to In3+-doping that passivated the surface states of BiVO4 and thus inhibited the surface charge recombination.

研究领域: 材料科学 · 能源科学
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CHEMICAL PHYSICS LETTERS · 2023 · IF 2.8

Effectively tuning the band gap of double perovskite Cs2Ag(BxBi1-x)Br6 (B = Sb3+, In3+) thin films

Yajie Wang,Xiaoyan Gan,Wei Zheng,Liling Guo,Hanxing Liu

Halide double perovskite Cs 2 AgBiBr 6 hinders its wide range of optoelectronic applications due to large band gap. This work focuses on Sb 3+ /In 3+ doping to tune the band gap of Cs 2 AgBiBr 6 thin films. The influences of annealing temperature and doping amount of Cs 2 Ag(B x Bi 1-x )Br 6 (B = Sb 3+ , In 3+ ) thin films were investigated. When annealed at the optimized temperature of 150 °C, the Cs 2 Ag(B x Bi 1-x )Br 6 (B = Sb 3+ , In 3+ ) thin films accommodate up to 100% Sb 3+ and 70% In 3+ , respectively, without showing any secondary phases. The band gap of Cs 2 Ag(B x Bi 1-x )Br 6 (B = Sb 3+ , In 3+ ) thin films decreases as the increase of Sb 3+ and increases as the increase of In 3+ amount. Therefore, the band gap regulation of 0.39 eV is realized, with the smallest value of 2.25 eV for Cs 2 AgSbBr 6 and highest value of 2.64 eV for Cs 2 Ag 0.3 In 0.7 Br 6 , respectively. Our work confirms an approach to realize band gap adjustment of Cs 2 AgBiBr 6 thin films.

研究领域: 材料科学 · 光电子学 · 半导体物理
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SEPARATION AND PURIFICATION TECHNOLOGY · 2024 · IF 8.1

In3+-doped Bi/BiOCl/Bi(In3+)-MOF composite for accelerating photocatalytic elimination of antibiotic-resistant bacteria and genes under co-effect of nanoconfinement and reactive oxygen species

Zhengkun Yu,Yunlei Zhou,Xingyu Liu,Shuqi Gong,Tianyi Sun,Huanshun Yin,Jingting Kang

A Bi/BiOCl/Bi(In 3+ )-MOF Z-scheme heterojunction enriched with positive electric charges on the surface caused by In 3+ doping was prepared by a one-step solvothermal method. Photodegradation of antibiotics (tetracycline, amoxicillin, ceftriaxone), antibiotic-resistant Escherichia coli (AR E. coli ), the tetA gene they carried, and Fusarium graminearum was investigated. The experimental results showed that Bi/BiOCl/Bi(In 3+ )-MOF sample possessed efficient photodegradation activity, with a removal of 10 7.34 CFU·mL −1 against AR E. coli in 80 min, 83.0 % and 4.89 log 10 copies·mL −1 for tetracycline and tetA gene in 120 min, respectively. Zeta potential test and adsorption capture experiment confirmed that Bi/BiOCl/Bi(In 3+ )-MOF surface was rich in positive charges and had a strong nanoconfinement effect on negative-charged bacteria and ARGs, which shorten the time for the active substances produced by photocatalysis to come into contact with bacteria and ARGs, thereby improving the photocatalysis degradation effect. Finally, Bi/BiOCl/Bi(In 3+ )-MOF sample was applied and discussed for the removal of complex colonies from duck farm wastewater.

研究领域: 环境科学 · 微生物学 · 材料科学
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CERAMICS INTERNATIONAL · 2024 · IF 5.1

Enabling efficient persistent luminescence in CdSiO3 phosphors through In3+ doping for optical information storage and dynamic encryption

Hong Li,Junfeng Zheng,Yanpeng Dai,Dongying Li,Xiangting Zhang

CdSiO 3 , with its distinctive crystal structure, has become a subject of considerable interest as a potential silicate host for long persistent luminescence (LPL) phosphors. However, in most cases, impurity phases in the host adversely affect the persistent luminescence (PersL) performance. Furthermore, there is still a lack of insightful understanding regarding the role of non-rare-earth (non-RE) In 3+ ions in the enhanced blue PersL of CdSiO 3 . Here, pure-phase monoclinic CdSiO 3 phosphor is synthesized through a solid-state reaction method and the intense blue PersL is achieved by aliovalent doping of In 3+ . Combining experimental results with theoretical calculation, we reveal that the intrinsic defects of O and Cd vacancies in CdSiO 3 are the trap centers for excited electrons and holes, respectively. In 3+ doping adjusts the distribution and increases the density of intrinsic defect-related traps, thus producing the intense blue PersL in CdSiO 3 :In 3+ . Moreover, the generality of In 3+ in enhancing the PersL properties is validated in CdSiO 3 :Mn 2+ ,In 3+ and CdSiO 3 :RE 3+ ,In 3+ (RE = Tb, Dy, Pr, Sm, Eu) phosphors, enriching the spectrum of PersL emission colors. Encouraged by the outstanding optical properties of CdSiO 3 :Mn 2+ ,In 3+ , we demonstrate dual-mode information storage-reading and dynamic information encryption applications. This advancement opens new avenues for the application of optical information security. This work emphasizes the key role of In 3+ in adjusting the distribution and increasing the density of intrinsic defect-related traps. Consequently, it reveals a clear mechanism for enhancing PersL through In 3+ doping and expands the range of LPL phosphors with broad spectral selectivity.

研究领域: 材料科学 · 光学工程 · 信息加密技术
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Advanced Optical Materials · 2019 ·Vol. 7 ·期 8 ·1801435 · IF 7.125

Manipulation of Bi3+/In3+ Transmutation and Mn2+-Doping Effect on the Structure and Optical Properties of Double Perovskite Cs2NaBi1-xInxCl6

Jun Zhou,Ximing Rong,Peng Zhang,Maxim S. Molokeev,Peijia Wei,Quanlin Liu,Xiuwen Zhang,Zhiguo Xia

The halide double perovskite family represented by A 2 (B + ,B 3+ )X 6 can overcome the lead toxicity and enable generally large band gap engineering via B/B sites' transmutation or exotic dopants to fulfill the emerging applications in the optoelectronic fields. Herein, the design and the experimental synthesis of a new family of Mn 2+ -doped Cs 2 NaBi 1- x In x Cl 6 crystals with an intense orange-yellow emission band are reported, and the phase formation stability is discussed via a combined experimental–theoretical approach. Depending on the manipulation of Bi 3+ /In 3+ combination, the band gap increases with In 3+ content, and a subsequent evolution from indirect to direct band gap is verified. First-principles calculations and parity analyses indicate a parity forbidden effect on Cs 2 NaInCl 6 , and a combination effect of absorption on Cs 2 NaBi 1- x In x Cl 6 from both Cs 2 NaBiCl 6 and Cs 2 NaInCl 6 . The associated Mn 2+ -doped photoluminescence depending on the Bi 3+ /In 3+ substitution is also addressed from the variation of the different Mn–Cl environment and neighboring-cation effect.

研究领域: 材料科学 · 光学
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INORGANIC CHEMISTRY · 2022 · IF 5.436

Vacancy-Mediated Z-Scheme Heterostructure in SnO2-Decorated Spinel In3–xS4 with Boosted Photocatalytic Activity

Kunjiao Li,Changcun Tang,Renzhi Xiong,Yanhe Xiao,Baochang Cheng,Shuijin Lei

The widespread application of dyes and heavy metals causes increasing environmental pollution. One effective way to mitigate environmental pollution is to use semiconductor photocatalysts for redox purification of pollutants. Heterostructured photocatalysts can reduce the electron–hole recombination rate and improve light utilization. In this work, a novel SnO2/In3–xS4 composite with oxygen vacancy defect-mediated Z-scheme heterostructure is constructed for the first time by a one-pot method, in which SnO2 ultrasmall nanocrystals are decorated on nanopetals of flower-like In3–xS4. Material analyses show that the as-built three-dimensional hierarchical architecture is able to essentially increase the specific surface area and thus the active sites of the products. More importantly, the formation of Z-scheme heterojunction between the oxygen vacancy-induced SnO2 defect level and the In3–xS4 band structure not only promotes the separation of photogenerated charges but also makes them more reactive. Through the optimization of the composition ratio between the two phases, the visible-light-driven photocatalytic reaction rates of rhodamine B degradation and Cr(VI) reduction for the developed SnO2/In3–xS4 composite photocatalyst are 12.8 and 6.3 times of bare In3–xS4 and 32.0 and 76.0 times of bare SnO2, respectively. This work should provide a promising implication for designing new high-performance composite photocatalysts.

CAS / MDL: 71-43-2 81-88-9
研究领域: 环境科学 · 材料科学 · 光催化
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APPLIED SURFACE SCIENCE · 2021 · IF 6.707

“On-off-on” fluorescence switch of graphene quantum dots: A cationic control strategy

Jie Li,Zhongteng Wang,Juan Yang,Xinming Xia,Ruobing Yi,Jie Jiang,Wei Liu,Junlang Chen,Liang Chen,Jing Xu

Fluorescence switch based on graphene quantum dots (GQDs) is of great interest in the areas of environment, medicine and data security because of their promising applications. However, the known ternary “on-off-on” fluorescent switches of GQDs are very few due to the limited effective fluorescence recovery strategies. In this work, we proposed a new cationic control strategy and designed a novel “on-off-on” fluorescence switch, i.e., GQDs-Cu 2+ /Fe 3+ /Cr 3+ -Al 3+ /Ga 3+ /In 3+ , where the fluorescence of synthesized GQDs was quenched by Fe 3+ , Cu 2+ and Cr 3+ , and subsequently was recovered by three kinds of Group IIIA ions Al 3+ , Ga 3+ and In 3+ . The corresponding recovery degree can reach up to 0.81 compared with the pristine GQDs. The XPS results combining with quantum chemical calculations illustrated that the change of π-conjugated region caused by cations dominated the quenching and recovery of fluorescence. Furthermore, based on this “on-off-on” mechanism, a kind of anti-counterfeiting stealth ink for information encryption was also suggested. This work is the first report that Group IIIA ions Al 3+ , Ga 3+ and In 3+ can be used for fluorescence recovery, and the cationic control strategy proposed here provides a new and promising strategy for the development of “on-off-on” fluorescent switch in future studies.

研究领域: 环境科学 · 医学 · 材料科学
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ADVANCED FUNCTIONAL MATERIALS · 2024 ·Vol. 34 ·期 34 ·2401860 · IF 18.5

Temperature/Component-Dependent Luminescence in Lead-Free Hybrid Metal Halides for Temperature Sensor and Anti-Counterfeiting

Guojun Zhou,Yanting Wang,Yilin Mao,Caihong Guo,Jian Zhang,Maxim S. Molokeev,Zhiguo Xia,Xian-Ming Zhang

Hybrid metal halides (HMHs) have emerged as a promising platform for optically functional crystalline materials, but it is extremely challenging to thoroughly elucidate the electron transition coupled to additional ligand emission. Herein, to discover sequences of lead-free HMHs with distinct optically active metal cations are aimed, that is, Sb 3+ (5s 2 ) with the lone-pair electron configuration and In 3+ (4d 10 ) with the fully-filled electron configuration. (Me 2 NH 2 ) 4 M Cl 6 ·Cl (Me = −CH 3 , M = Sb, In) exhibits the superior temperature/component-dependent luminescence behaviors resulting from the competition transition between triplet-states (T n -S 0 ) self-trapped excitons (STEs) of inorganic units and singlet-state (S 1 -S 0 ) of organic cations, which is manipulated by the optical activity levels of [SbCl 6 ] 3− and [InCl 6 ] 3− . The bonding differences between Sb 3+ /In 3+ and Cl − in terms of electronic excitation and hybridization are emphasized, and the different electron-transition mechanisms are established according to the PL spectra at the extreme temperature of 5 to 305 K and theoretical calculations. By fine-tuning the B-site Sb 3+ /In 3+ alloying, the photoluminescence quantum yield (PLQY = 81.5%) and stability are optimized at 20% alloying of Sb 3+ . This research sheds light on the rules governing PL behaviors of HMHs, as well as exploring the optical-functional application of aviation temperature sensors and access-control systems.

CAS / MDL: 38353-09-2 10025-82-8
研究领域: 材料科学 · 光学
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Materials · 2022 ·Vol. 15 ·期 15 ·5199 · IF 3.748

Ligand-Tuned Multi-Color Luminescence of Single Aluminum (III) Ion Atomic Centers and Their Selective Sensitivity to Different Metal Ions

Qian Wang,Longlong Li,Qinglin Tang,Jin Liu,Yao Wang,Jiuxing Wang,Matt J. Kipper,Haijiao Xie,Laurence A. Belfiore,Jianguo Tang

Achieving multi-color luminescence with a single atomic center in transition metal complexes is a challenge. In this work, luminescent materials with tunable emission properties were realized by complexation between aluminum (III) ions with the ligands 3-hydroxyflavone (3-HF) and 5,7-dichloro-8-hydroxyquinoline (DCHQ). Aluminum (III) complexes with a single ligand emitted blue from 3-HF and green from DCHQ. High quantum yields (QYs) of 29.42% and 37.00% were also obtained, respectively. DFT calculations revealed details of the photophysical properties of the complexes. Correspondingly, cyan light emission was obtained if these two complexes were mixed together, from which the emission wavelength was located at 470 nm and the QY was 20.52%, under 290 nm excitation. More importantly, the cyan light emitted by the mixtures had selective sensitivity to different metal ions, resulting in either quenching the fluorescence (in the case of Fe3+) or enhancing the fluorescence (in the case of In3+). The fluorescence enhancement effect of In3+on metal complexes has not been previously reported, neither for transition metal nor lanthanide ions. The linear quenching behavior of Fe3+functions in the 50–700 μM concentration range, and the linear enhancement behavior of In3+is demonstrated in the 300–800 mM concentration range.Keywords:aluminum complex;ligand tuned;CLM;sensitivity

研究领域: 材料科学 · 光化学 · 分析化学
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CHEMISTRY OF MATERIALS · 2019 · IF 10.159

Stabilizing the CsSnCl3 Perovskite Lattice by B-Site Substitution for Enhanced Light Emission

Ziyan Wu,Qiqi Zhang,Binghan Li,Zhifang Shi,Kaimin Xu,Yi Chen,Zhijun Ning,Qixi Mi

All-inorganic metal halide perovskites are noted for their excellent optoelectronic properties and good chemical stability but also a propensity to transform into nonperovskite phases. A case in point is lead-free CsSnCl3, whose perovskite Phase I is metastable at room temperature and could not be stabilized by partial substitution of Cs+ or Cl–. Judging from the radii of the constituent ions of CsSnCl3, we paid attention to octahedral cations smaller than Sn2+ and selected Mn2+ and In3+ for substitution at the B-site. A quantitative structural indicator, volume per formula unit (V/Z), guided the syntheses of CsSn0.9Mn0.1Cl3 (CTMC) and CsSn0.9In0.067Cl3 (CTIC), which are shown by single-crystal X-ray diffraction and differential scanning calorimetry to be homogeneous, stable perovskite phases at room temperature. CTMC turns into a disordered perovskite structure at 193 K, lower than the corresponding transition temperature of CsSnCl3 by nearly 100 K. Vacancies in CTIC result in a more flexible crystal structure than CTMC and CsSnCl3. CTMC and CTIC appear bright yellow with a steep absorption edge at ∼450 nm, and their photoluminescence peaks are located at 645 and 484 nm, respectively, with intensities significantly enhanced from CsSnCl3. Energy transfer processes are proposed to account for the Stokes shifts in the photoluminescence of CTMC and CTIC. Thin films of CTMC glow red under ultraviolet excitation and hold promise for electroluminescence devices. This study gives insights into the structural and electronic effects of ionic substitution in CsSnCl3 and can be extended to other metastable perovskite phases.

研究领域: 材料科学 · 光电 · 固体化学
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CHEMISTRY-A EUROPEAN JOURNAL · 2018 ·Vol. 24 ·期 51 ·13676-13680 · IF 5.16

From Indium-Doped Ag2S to AgInS2 Nanocrystals: Low-Temperature In Situ Conversion of Colloidal Ag2S Nanoparticles and Their NIR Fluorescence

Huishan Shang,Qiumei Di,Muwei Ji,Bing Bai,Jiajia Liu,Wenxing Chen,Meng Xu,Hongpan Rong,Jia Liu,Jiatao Zhang

Graphical Tunable nanocrystals . Ternary I-III-VI 2 (AgInS 2 ) colloidal nanocrystals (NCs) with precise control of the composition (from In 3+ doping to ternary composition) and good NIR fluorescence performance (800–1000 nm) have been synthesized by facile low-temperature in situ conversion of colloidal Ag 2 S nanoparticles. In 3+ ions were inserted into the crystal lattice of Ag 2 S NCs at a relatively low temperature as dopant with ternary AgInS 2 NCs obtained at a higher temperature following a phase transition (see figure). Focusing on ternary I-III-VI 2 colloidal nanocrystals (NCs) synthesized with precise control of the composition (from doping to ternary composition) and NIR fluorescence performance, monodisperse binary In 3+ -doped Ag 2 S NCs and ternary AgInS 2 NCs have been achieved successfully by facile low-temperature in situ conversion of colloidal Ag 2 S nanoparticles. In 3+ ions were inserted into the crystal lattice of Ag 2 S NCs at a relatively low temperature as dopant and ternary AgInS 2 NCs were obtained at a higher temperature following a phase transition. These doped Ag 2 S and AgInS 2 NCs based on different indium precursor concentrations were explored with respect to the position and intensity of the near-infrared photoluminescent emission at different doping levels and crystal phase evolution.

研究领域: 材料科学 · 光学
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JOURNAL OF ALLOYS AND COMPOUNDS · 2025 · IF 6.3

Nanostructure modification and enhanced photoluminescence of In3+ doped WO3-x synthesized by solvothermal method

Likun Wang,Xuhui Yu,Xiaoyue Hao,Qingyin Di,Lukai Shen,Donghui Li

Tungsten trioxide (WO 3 ) is a promising functional oxide for optoelectronic and photonic applications; however, simultaneously controlling its morphology and defect structure remains a significant challenge. Herein, we demonstrate a facile hydrothermal strategy to synthesize indium-doped WO 3-x nanostructures and systematically investigate the correlation between dopant concentration, morphological evolution, and photoluminescence (PL) properties. By tuning the In 3+ content from 0 to 20 at%, the morphology progressively transforms from slender nanowires to nanorods and finally nanosheets, accompanied by lattice distortion and defect generation. The optical bandgap decreases from 3.23 eV to 2.73 eV, while the PL emission intensity exhibits a remarkable non-monotonic increase, reaching a maximum enhancement of approximately 10-times at 15 at% In 3+ . This enhancement is attributed to the synergistic effects of defect-induced radiative recombination centers and morphology-optimized light–matter interactions. Our findings establish a clear structure–property relationship for In-doped WO 3-x nanostructures and provide new insights into defect and morphology engineering for advanced WO 3 -based optoelectronic and photonic devices.

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