Developing lightweight packaging materials with high radiation protection efficiency for MOSFET radiation hardening is highly significant for enhancing the radiation resistance of MOSFETs in space radiation environments. This work presented lightweight Bi-GdF 3 /Ti 3 C 2 T x aerogel (BGTA) with high electron radiation protection efficiency (RPE) through self-assembly and directional freezing. Subsequently, a radiation hardened MOSFET was obtained by packaging with BGTA. The resulting BGTA packaging material demonstrates excellent electron protection efficiency (92.23 %) compared to conventional Al packaging materials (23.80 %) at the same areal density. Meanwhile, the BGTA-packed MOSFET shows outstanding radiation resistance, exhibiting a much smaller negative threshold voltage drift value of 0.10 V compared to the Al-packed MOSFET (1.17 V). The electron shielding mechanism of BGTA was analyzed and elucidated by FASTRAD simulation on a micro scale. Due to the synergistic effect of the honeycomb aerogel structure and Bi/GdF 3 functional filler in BGTA aerogel, the incident electrons are effectively attenuated, thereby reducing radiation damage to the SiO 2 layer of the MOSFET and improving the radiation resistance of the MOSFET. Theoretical calculation results substantiate that the BGTA-packed MOSFET exhibits lower threshold voltage shifts and trapped charges. This work presents a lightweight and highly efficient MXene aerogel packaging material for MOSFET radiation hardening.
Kai Cui,Yang Hong,Jingyang Li,Wenjing Wei,Tianyu Zhang,Hongjun Kang,Yang Li,Wei Qin,Xiaohong Wu
The metal-oxide-semiconductor field-effect transistor (MOSFET) devices as electronically controlled switches suffer performance degradation or even damage under high-energy electron radiation. Therefore, it is urgent to develop novel packaging hardening coatings to mitigate the risk of high-energy electron radiation exposure for MOSFET devices. Here, Cs 4 PbBr 6 @ZnO heterojunction is prepared by atomic layer deposition technology, and the polymer-based composite coatings (Cs 4 PbBr 6 @ZnO/EP) are constructed on the surface of MOSFET devices, showing the excellent radiation resistance. The threshold voltage offset under high-energy electron radiation is reduced from 2.26 V to 0.49 V. Experimental and theoretical calculation results reveal that Cs 4 PbBr 6 @ZnO functional fillers play a crucial role in the blocking of high-energy electron radiation. Meanwhile, Cs 4 PbBr 6 @ZnO heterojunction is beneficial to the interfacial electron transfer, forming an electron accumulation region with high local electron density and an electron depletion region with increased extranuclear electron binding energy, which reduces the trapping charge concentration and improves the radiation resistance of MOSFET devices. This work provides a novel strategy for the design and development of anti-radiation hardening MOSFET devices.
The radiation resistance of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is of great significance when applied in aerospace. However, it is still challenging to obtain MOSFETs with excellent radiation resistance. In this work, the radiation hardened MOSFETs were realized by GdF 3 -Al 2 O 3 @Bi-Ti 3 C 2 T x /epoxy (MBAG/EP) polymer-based composite coating with function of trapped interfacial electrons. The radiation resistance of resultant packed MOSFET is significantly improved, showing the lower threshold voltage negative drift value (0.41 V) than the bare MOSFET (7.89 V). This is mainly attributed to the introduction of ultra-thin Al 2 O 3 intermediate layer between Bi and GdF 3 , which effectively tailor electron dense and distribution for an effective electron attenuation, and thus improve the radiation resistance of the MOSFET. Theoretical calculations further reveal that the packed MOSFETs present the less shifted voltage and trapped charges compared with the pristine one. This work provides an interface engineering strategy for developing radiation hardened MOSFETs.
危险品化学品经营许可证（带存储）