Materials Today Communications
·
2024
·
IF 3.7
Junliang Fan,Li Xiao,Yuantao Qin,Hao Yan,Xiaolin Qu,Zhenzhen Li,Hengxiang Gong
There is little research on α-Ga 2 O 3 single crystal film because it is a metastable phase of Ga 2 O 3 crystal and difficult for controllable fabrication. In this paper, highly crystallized Ga 2 O 3 thin films of poly-crystalline, α-Ga 2 O 3 and β-Ga 2 O 3 were prepared by modulating the growth temperature from 400 °C to 700 °C by mist-assisted CVD (Mist CVD) method. The results show that films grown at 525 °C owes the best crystalline quality of α-Ga 2 O 3 film. To further improve the crystallinity of α-Ga 2 O 3 thin film, a systematic simulation revealing the distribution changes of aerosol particle size, flow field, and temperature gradient in the reaction chamber were explored. The optimal growth region C with uniform particle size, well-distribute temperature gradient and stable flow field is determined. Meanwhile, the experimental results of α-Ga 2 O 3 thin films grown at different positions in the reaction chamber was proved to consistent with the simulation results. Furthermore, the optimal single crystallized α-Ga 2 O 3 thin films with smooth surface morphology and optical property were obtained. The PL spectrum operated at room temperature show the α-Ga 2 O 3 film with low defect density and high crystalline quality. It shows that the single crystallized α-Ga 2 O 3 is orientated grown on sapphire substrate with epitaxial relationship of α-Ga 2 O 3 (0006)//c-Al 2 O 3 (0006). Although, slight lattice mismatch is observed on the selected area electron diffraction pattern of the interface between sapphire and α-Ga 2 O 3 film, it is ideal for further application in devices. This work reveals the key point for α-Ga 2 O 3 single crystal film growth by mist CVD is to construct a steady and orderly environment through controlling aerosol particle state.
研究领域:
材料科学
·
物理学
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2026
·
IF 6.7
Liru Zeng,Zeyulin Zhang,Dinghe Liu,Zhuangjie Xu,Dazheng Chen,Yue Peng,Qian Feng,Yachao Zhang,Jincheng Zhang,Chunfu Zhang,Yue Hao
The interfacial configuration in oxide heteroepitaxy plays a critical role in determining the structural integrity and reliable performance of wide-bandgap heterostructures. Herein, we investigate the orientation-dependent epitaxial growth of high-quality NiO films on β-Ga 2 O 3 via mist chemical vapor deposition (Mist-CVD), exhibiting distinct epitaxial domain configurations depending on the substrate orientation. Combined experimental and density functional theory (DFT) analyses reveal that the synergistic interplay among surface energy, lattice mismatch, and crystal symmetry governs the epitaxial mode and crystalline quality across different substrate orientations. Benefiting from the high-quality epitaxy, the NiO films demonstrate good environmental stability, retaining 94% of their initial current after 30 days of ambient exposure. As a functional demonstration, the NiO/(001) β-Ga 2 O 3 p-n diode exhibits a low leakage current density (2.08 ×10 −8 A·cm −2 @-100 V) and a high breakdown voltage of 885 V, highlighting the critical role of epitaxial interface quality. This study provides mechanistic insight into orientation-regulated oxide heteroepitaxy and offers a viable materials strategy for constructing stable wide-bandgap oxide heterostructures.
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产品关联
DOI
高影响因子
NEW JOURNAL OF CHEMISTRY
·
2024
·Vol. 48
·期 22
·10133-10141
·
IF 2.7
Rong Tu,Jiangwei Liu,Yingqiu Zheng,Chao Song,Chitengfei Zhang,Yuzhe Han,Rongchen Xu,Guoqiang Luo,Song Zhang,Takashi Goto
NiO-based materials hold great promise as oxygen evolution reaction (OER) catalysts owing to their high intrinsic OER activity and good chemical stability. Herein, Ni/NiO/C hollow microspheres with high activity were successfully fabricated through a facile one-step mist chemical vapor deposition (mist-CVD) process using ethanolamine and nickel chloride as precursors. The high-temperature pyrolysis of the organic precursor yields a significant quantity of gas, leading to a rapid increase in pressure within the droplet, which prompts the nanoparticles to aggregate on the surface of the droplet and form a hollow structure. The crystal phase and morphology of the samples can be modulated through optimizing the decomposition temperature, and particularly, Ni/NiO/C porous hollow microspheres synthesized at 600 °C (Ni-600) presented the best OER activity, exhibiting an overpotential at 10 mA cm−2 (η10) of 286.4 mV and a Tafel slope of 54.8 mV dec−1. The outstanding OER electrocatalytic performance of Ni/NiO/C hollow microspheres is ascribed to the improved electronic conductivity facilitated by the existence of metallic Ni and amorphous C, coupled with the relatively large specific surface area derived from the unique hollow structure.
研究领域:
材料科学
·
电化学
✓ 已验证
产品关联
DOI
高影响因子
Applied Sciences-Basel
·
2023
·Vol. 13
·期 2
·1112
·
IF 2.7
Zeyulin Zhang,Yanshuang Ba,Dazheng Chen,Pengru Yan,Qingwen Song,Yuming Zhang,Weidong Zhu,Chunfu Zhang,Yue Hao
All-inorganic perovskites, with their low-cost, simple processes and superior heat stability, have become potential candidate materials for photodetectors (PDs). However, they have no representative responsivity in the deep-ultraviolet (UV) wavelength region. As a new-generation semiconductor, gallium oxide (Ga2O3), which has an ultrawide bandgap, is appropriate for solar-blind (200 nm–280 nm) deep-UV detection. In this work, ultrawide-bandgap Ga2O3was introduced into an inorganic perovskite device with a structure of sapphire/β-Ga2O3/Indium Zinc Oxide (IZO)/CsPbBr3. The performance of this perovskite PD was obviously enhanced in the deep UV region. A low-cost, vacuum-free Mist-CVD was used to realize the epitaxial growth of β-Ga2O3film on sapphire. By introducing the Ga2O3layer, the light current of this heterojunction PD was obviously enhanced from 10−8to 10−7, which leds its detectivity (D*) to reach 1.04 × 1012Jones under a 254 nm light illumination with an intensity of 500 μW/cm2at a 5 V bias.
✓ 已验证
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2022
·
IF 5.532
Zaichun Sun,Bingchu Mei,Hao Zhou,Shaoyong Qin,Huijuan Zhang
High-quality (001) orientated bismuth oxobromide (BiOBr) thin films were deposited on polycrystalline Sn: In 2 O 3 -glass substrates at open-air atmospheric pressure with mist chemical vapor deposition (CVD). Generally, it is difficult to control the surface morphology and thickness for BiOBr because of the high anisotropic crystal structure and very volatile halide . In this study, the growing thickness of BiOBr thin films showed a linear correlation with deposition time. Small thickness resulted in limited absorption ability, while large thickness led to increase of electrical resistance. The surface morphology of (001) orientated BiOBr thin films can be improved obviously under the acidic environment via suppressing Bi 3+ hydrolysis. The (001) orientated BiOBr thin films that deposited by mixed solvent of DMF and 35% HNO 3 aqueous solution exhibited the highest photocurrent density with 0.33 mA cm −2 at 0.6 V vs Ag/AgCl. The intermediate thickness and continuous surface morphology effectively promote the transfer and separation of electron-hole pairs, leading to superior photoelectrochemical (PEC) performance.
研究领域:
材料科学
·
光电化学
✓ 已验证
DOI
高影响因子
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