ACS Applied Materials & Interfaces
·
2019
·
IF 8.456
Xiaofei Cao,Yongzhan Han,Jiankui Zhou,Weiwei Zuo,Xiao Gao,Lifeng Han,Xinchang Pang,Li Zhang,Yingliang Liu,Shaokui Cao
The ON/OFF ratio and long-term stability are two important issues for flexible organic–inorganic hybrid perovskite (OHP) resistive random access memory (RRAM) for practical applications. In this work, polyvinylammonium (PVAm) is applied to partially replace methylamine ions (MA+) to fabricate the stable and flexible polymeric OHP RRAM devices, wherein PVAm acts as nucleation sites and the template for crystalline growth of MAPbI3 to tune the microscopic perovskite structure. Simultaneously, the multiple perovskite grain interfaces are strengthened through the long-carbochain polymeric backbone, hence producing a continuous and compact perovskite film. As a result, the PVAm-modified OHP RRAM device shows remarkable enhancement of the ON/OFF ratio, long-term stability, and flexibility compared with the unmodified OHP device. Specifically, the polymeric OHP device exhibits fast and stable nonvolatile resistive switching (RS) characteristics with an ON/OFF ratio of ∼105 and a set voltage of −0.45 V under ambient conditions. Also, the distinct multilevel RS behavior can be realized in this device by controlling the compliance current in the SET process. Additionally, the unsealed polymeric OHP device manifests the striking long-term stability, which can still maintain the stable memory performance after 1 year exposure to the humid and thermal ambient environment. Furthermore, the flexible polymeric OHP device was also fabricated and affords the excellent bending endurance behavior by showing a reproducible RS property over 100-cycle bending experiments. This work provides a new perovskite-based material design strategy of polymeric OHP for stable and flexible RRAM devices with the high ON/OFF ratio.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Journal of Materiomics
·
2023
·
IF 9.4
Tangyou Sun,Fantao Yu,Xiaosheng Tang,Haiou Li,Fabi Zhang,Zhimou Xu,Qing Liao,Zhiqiang Yu,Xingpeng Liu,Peihua Wangyang,Hezhang Li,Ying Peng
The field of artificial intelligence and neural computing has been rapidly expanding due to the implementation of resistive random-access memory (RRAM) based artificial synaptic. However, the low flexibility of conventional RRAM materials hinders their ability to mimic synaptic behavior accurately. To overcome such limitation, organic-2D composites with high mechanical properties are proposed as the active layer of RRAM. Moreover, we enhance the reliability of the device by ZrO 2 insertion layer, resulting in stable synaptic performance. The Ag/PVA:h-BN/ZrO 2 /ITO devices show stable bipolar resistive switching behavior with an ON/OFF ratio of over 5 × 10 2 , a ∼2 400 cycles endurance and a long retention time (>6 × 10 3 s), which are essential for the development of high-performance RRAMs. We also study the possible synaptic mechanism and dynamic plasticity of the memory device, observing the transition from short-term potentiation (STP) to long-term potentiation (LTP) under the effect of continuous voltage pulses. Moreover, the device exhibits both long-term depression (LTD) and paired-pulse facilitation (PPF) properties, which have significant implications for the design of organic-2D composite material RRAMs that aim to mimic biological synapses, representing promising avenues for the development of advanced neuromorphic computing systems.
研究领域:
人工智能
·
神经计算
·
材料科学
·
电子器件
✓ 已验证
产品关联
DOI
高影响因子
EUROPEAN POLYMER JOURNAL
·
2020
·
IF 3.862
Minchao Gu,Zhizheng Zhao,Jiaxuan Liu,Gang Liu,Bin Zhang,Mohamed E. El-Khouly,Yu Chen
Strong demand has been raised for the lightweight, wearable and flexible electronic devices such as wearable computers, paper-like E-readers and epidermal electronics. By using MWNTs-PhBr as a key one dimensional template, novel MWNTs (multi-walled carbon nanotubes) covalently functionalized with poly[(1,4-diethynyl- benzene)- alt -9,9-bis-(4-diphenylaminophenyl)fluorene] (PDDF- g -MWNTs), in which the weight percentage of MWNTs is about 22.74, were successfully synthesized. The as-prepared flexible electronic device with a configuration of Al/PDDF- g -MWNTs/ITO-coated polydimethylsiloxane shows typical nonvolatile rewritable memory performance, with a higher ON/OFF current ratio of more than 10 4 , a switch-on voltage of +2.07 V and a switch-off voltage of −2.45 V. With increasing the film thicknesses, the ON/OFF current ratio of the device was changed from 1 × 10 4 (80 nm) to 2 × 10 4 (100 nm) to 4 × 10 4 (130 nm). Both the switch-on and switch-off voltages almost kept unchanged even if the film thickness was increased from 80 to 130 nm. Upon bending and stretching, the corresponding electronic device still shows good stability and reliability. Electrons dominate the conduct process in PDDF- g -MWNTs during the operation of the device.
研究领域:
材料科学
·
纳米技术
·
电子学
·
柔性电子
·
存储器器件
✓ 已验证
DOI
高影响因子
ORGANIC ELECTRONICS
·
2021
·
IF 3.721
Yijia Zhou,Xiaofeng Zhao,Yingna Zhang,Feng Dou,Shuhong Wang,Cheng Wang
The poly[2,7-9-(9-heptadecanyl)-9H-carbazole-co-benzo[4,5] imidazole[2,1-a]isoindol-11-one] (PCz-O) was synthesized by Suzuki coupling reaction, which structure was verified by FT-IR, 1 H NMR and 13 C NMR. The spin coating method was used to prepare RRAM devices based on PCz-O: ZrO 2 nanoparticle active layer, and the devices exhibited ternary switching. Through a series of performance tests, both pure polymer device and composited with ZrO 2 NPs devices had ternary storage characteristics. Among them, the content of composited with 8 wt% ZrO 2 showed the most excellent ternary storage characteristics. The ON/OFF current ratio was 2.60 × 10 4 , and the threshold voltage V th1 / V th2 was −0.60 V/-1.00 V. The current is stable for 10000 s in both ON/OFF states. After 3300 times of reading, the switch state current of the devices had slight variation. In addition, the switching mechanism of the device was also discussed. Through carefully testing and analyzing, the devices had good stability and durability, and had potential application value in terms of data storage.
研究领域:
材料科学
·
电子工程
✓ 已验证
DOI
高影响因子
VACUUM
·
2024
·
IF 3.8
Jing Xu,Lu Qiao,Yadong Yang,Yong Liu,Yuanyuan Zhu,Jinbing Cheng,Hongjun Wang,Rui Xiong
Resistive random-access memory ( RRAM) has been widely studied because of its high information storage density and easy integration, and it has potential to replace traditional memory storage means. However, it is prone to random formations and fracture of conductive filaments , which limits its commercial applications. In this study, magnetron sputtering was used to deposit NbO x films on different substrates modified with different concentrations of Au-nanoparticles (NPs). The as developed Pt-Au min /NbO x /W tip device with the lowest concentration of Au-NPs modified bottom electrode exhibited the best performance; the V set distribution of the device was more concentrated, V reset decreased significantly, the distribution range was narrow, and the resistance distribution of high and low resistance states (HRS and LRS, respectively) was more stable. Modification of the bottom electrode with Au-NPs did not change the ohmic conduction behavior of NbO x RRAM in LRS; however, it changed the resistance switching mechanism from SCLC to P–F effect modified SCLC . The Au-NPs modified bottom electrode acted like a tip, enhancing the local electric field and promoting the formation of conductive filaments near the NPs. This work explains the internal mechanism for improving RRAM properties using a local electric field and provides theoretical guidance for enabling the rapid commercialization of RRAM.
研究领域:
材料科学
·
电子工程
✓ 已验证
DOI
高影响因子
JOURNAL OF ELECTRONIC MATERIALS
·
2023
·Vol. 52
·期 4
·2794-2806
·
IF 2.1
Li Shengnan,Meng Haoyan,Fan Wentao,Shen Junqing,Xu Shengang,Liu Yingliang,Cao Shaokui
Abstract Woven resistive random access memory (RRAM) is a promising subject in flexible wearable electronic devices. In this work, polyvinylammonium iodate (PVAm·HI) is added to the FAPbI 3 perovskite precursor solution to fabricate a flexible fibrous woven RRAM array by improving the flexibility and stability of FAPbI 3 perovskite. The long carbochain polymer backbone of PVAm serves as nucleation sites and a growth template to improve the perovskite crystallization process, and to in situ crosslink the perovskite grains at the crystal interface. The functional Al@FAPbI 3 :PVAm fibers are then prepared by solution dip-coating to assemble the fibrous crosspoint RRAM device with the structure of Al@FAPbI 3 :PVAm/Al by crossing bare aluminum (Al) fibers with functional fibers. Compared to a pristine device, the PVAm-modified devices exhibit a considerable improvement in the ON/OFF ratio and environmental stability. Specifically, the 2% PVAm-modified FAPbI 3 RRAM devices show an evident bipolar resistive switching (RS) behavior with a high ON/OFF ratio of 10 9 , which can easily achieve multilevel storage by setting the compliance current ( I cc ) to increase the storage density in the crosspoint array. Interestingly, a 100-times bent plastics-encapsulated device still exhibits a good RS behavior. This work provides a facile approach to achieve high-density storage in flexible wearable electronic devices.
Graphical Abstract
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
高影响因子
Materials Today Communications
·
2023
·
IF 3.8
Yusheng Yang,Bai Sun,Guangdong Zhou,Chuan Ke,Jie Zhang,Yongzan Zhou,Shuangsuo Mao,Jiajia Qin,Yong Zhao
Since memristors have shown great application prospects in non-volatile memory, neural synapse, brain-like chips, artificial intelligence (AI) and quantum computers, the research of memristors has received extensive attention. In this work, the resistive switching (RS) device with Ag/SrTiO 3 (STO)/Ti structure was fabricated, and it can significantly improve the RS performance of device by doping Mn ions into STO to replace part of Ti ions . That is to say, the Ag/Mn-doped SrTiO 3 (SMTO)/Ti device exhibits larger resistance window and better retention at room temperature. Finally, through in-depth mechanistic analysis, a physical model of the conducting filament and Schottky emission was established to understand the charge transport mechanism and RS behavior of the device. In particular, it provides favorable factors for the migration of ions and electrons through the Mn doping because the substitution of Mn for Ti ions reduces the volume of the STO crystal while distorting its crystal shape since the ionic radius of Mn is smaller than that of Ti. This work provides an important way to improve the RS properties of ABO 3 -type perovskite-based resistive random access memory (RRAM), and helps to explore the cutting-edge applications of high-performance RS devices in information processing and AI.
研究领域:
材料科学
·
电子工程
·
人工智能
✓ 已验证
产品关联
DOI
高影响因子
Nanomaterials
·
2022
·Vol. 13
·期 1
·39
·
IF 5.719
Yuan-Dong Xu,Yan-Ping Jiang,Xin-Gui Tang,Qiu-Xiang Liu,Zhenhua Tang,Wen-Hua Li,Xiao-Bin Guo,Yi-Chun Zhou
Resistive random-access memory (RRAM) is a promising candidate for next-generation non-volatile memory. However, due to the random formation and rupture of conductive filaments, RRMS still has disadvantages, such as small storage windows and poor stability. Therefore, the performance of RRAM can be improved by optimizing the formation and rupture of conductive filaments. In this study, a hafnium oxide-/aluminum-doped zinc oxide/hafnium oxide (HfO2/Al-ZnO/HfO2) tri-layer structure device was prepared using the sol–gel method. The oxygen-rich vacancy Al-ZnO layer was inserted into the HfO2layers. The device had excellent RS properties, such as an excellent switch ratio of 104, retention of 104s, and multi-level storage capability of six resistance states (one low-resistance state and five high-resistance states) and four resistance states (three low-resistance states and one high-resistance state) which were obtained by controlling stop voltage and compliance current, respectively. Mechanism analysis revealed that the device is dominated by ohmic conduction and space-charge-limited current (SCLC). We believe that the oxygen-rich vacancy concentration of the Al-ZnO insertion layer can improve the formation and rupture behaviors of conductive filaments, thereby enhancing the resistive switching (RS) performance of the device.
研究领域:
材料科学
·
电气工程
·
纳米技术
·
半导体器件
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）