Catalysis Science & Technology
·
2023
·Vol. 13
·期 24
·7046-7058
·
IF 5
Wei Jin,Dekang Liu,Liyuan Zhang,Qian Sun,Yishan Wang,Enzhou Liu,Xiaoyun Hu,Hui Miao
Titanium dioxide (TiO2), a conventional n-type semiconductor, was widely used in photocatalysis, electrocatalysis and photoelectrocatalysis due to its good UV absorption and stable physical and chemical properties. However, its wide band gap and low oxygen reaction (OER) activity limited its application in photoelectrochemical (PEC) water splitting. In this work, we successfully constructed type-II Sb2(S,Se)3@TiO2 core–shell heterojunctions. Antimony sulfide selenide (Sb2(S,Se)3) was a quasi-one-dimensional light-absorbing material with an adjustable band gap (1.1–1.8 eV), which broadened the TiO2 light absorption range and effectively promoted the photogenerated carrier separation, transportation and utilization. Of particular note, novel Sb2(S,Se)3 nanospheres (NSPs) (ca. 69 nm) were in situ grown inside the tubes attributed to the unique space-confinement effect of TiO2 nanotubes (NTs). The IPCE value for Sb2(S,Se)3@TiO2 at 734 nm was 10.808% compared to 0.030% for TiO2. The separation efficiency and injection efficiency increased from 2.48% and 31.62% to 4.90% and 36.48%, respectively. The onset potential was moved negatively by 60 mV, and the maximum photocurrent density of 1.53 mA cm−2 at 1.23 V vs. RHE was 13.9 times higher than that of TiO2 (0.11 mA cm−2). This work provided a new idea for the application of TiO2 in the field of PEC water splitting.
研究领域:
材料科学
·
能源科学
✓ 已验证
产品关联
DOI
高影响因子
Advanced Electronic Materials
·
2018
·Vol. 5
·期 2
·1800683
·
IF 5.466
Weihuang Wang,Xiaomin Wang,Guilin Chen,Liquan Yao,Xiaojuan Huang,Tao Chen,Changfei Zhu,Shuiyuan Chen,Zhigao Huang,Yi Zhang
Antimony sulfide-selenide Sb 2 (S,Se) 3 as a promising absorber material has drawn extensive attention owing to its rewarding photoelectric properties, low toxicity, and earth abundant components. Here, an available and highly effective method, in situ hydrothermal growth accompanied with postselenization, is successfully applied to fabricate Sb 2 (S,Se) 3 solar cells. The rationale for the preparation of Sb 2 S 3 precursors by the hydrothermal method is discussed, and detailed characterization of Sb 2 (S,Se) 3 films selenized with different temperatures is also carried out. Finally, a solar cell with structure of FTO/CdS/Sb 2 (S,Se) 3 /Spiro-OMeTAD/Au is fabricated, which delivers an encouraging 6.14% efficiency with V oc of 732 mV, J sc of 14.6 mA cm −2 , and fill factor of 60.8%. This work provides valuable references for further development and improvement of Sb 2 (S,Se) 3 solar cells.
研究领域:
材料科学
·
太阳能
·
纳米技术
✓ 已验证
DOI
高影响因子
SOLAR ENERGY
·
2024
·
IF 6
Zhi-Ping Huang,Hui-Li,Wei-Ze Wang,Hu Li,Li-Mei Lin,Zhi-Gao Huang,Shui-Yuan Chen,Gui-Lin Chen
Sb 2 (S,Se) 3 is a promising photovoltaic material due to its tunable bandgap, high thermal stability, and low-cost production potential. However, films produced by close-spaced sublimation (CSS) often suffer from defects that reduce efficiency. In this work, lithium (Li) doping was introduced to improve crystal quality, carrier concentration, and conductivity. The lithium was incorporated into the sublimation source via molten salt treatment, resulting in a uniform Li-Sb 2 (S,Se) 3 thin film. The resulting ITO/CdS/Li-Sb 2 (S,Se) 3 /PbS/Carbon solar cell achieved a power conversion efficiency of 6.18%, a significant improvement over undoped devices. The study further investigates the optoelectronic properties, revealing that Li doping effectively reduces non-radiative recombination, improves carrier extraction, and increases the valence band maximum (VBM), optimizing energy level alignment for enhanced hole transport. Additionally, the improved surface conductivity and higher carrier concentration due to Li doping contributed to enhanced carrier transport and reduced recombination.This research demonstrates that alkali metal doping can enhance the optoelectronic properties of Sb 2 (S,Se) 3 films, providing a pathway for further efficiency improvements in antimony-based thin-film solar cells.
研究领域:
材料科学
·
光伏技术
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2021
·Vol. 31
·期 28
·2101476
·
IF 18.808
Yanlin Pan,Xiaobo Hu,Yixin Guo,Xingyu Pan,Fei Zhao,Guoen Weng,Jiahua Tao,Chunhu Zhao,Jinchun Jiang,Shaoqiang Chen,Pingxiong Yang,Junhao Chu
The vapor transport deposition of quasi-one-dimensional antimony selenosulfide (Sb 2 (S,Se) 3 ) has recently attracted increasing research interest for the inexpensive, high-throughput production of thin film photovoltaic devices. Further improvements in Sb 2 (S,Se) 3 solar cell performance urgently require the identification of processing strategies to control the orientation, however the growth mechanism of high quality absorbers is still not completely clear. Herein, a facile and general vapor transport deposition approach to precisely control the growth of large-grained dense Sb 2 (S,Se) 3 films with good crystallization and preferred orientation via the source vapor speed is utilized. It is found that defect activation energy rather than the defect concentration plays a decisive role in the Sb 2 (S,Se) 3 photovoltaic performance. Admittance spectroscopy analysis is used to obtain efficient Sb 2 (S,Se) 3 solar cells. By employing dual-source coordinations to optimize the absorber layer a power conversion efficiency of 8.17% is obtained which is the highest efficiency for Sb 2 (S,Se) 3 solar cells fabricated by vapor transport technology. This study suggests that there are other opportunities for gaining deeper a understanding of the defect physics and carrier recombination mechanisms in other highly oriented low-dimensional materials to achieve improved device performance.
研究领域:
材料科学
·
光伏技术
·
半导体薄膜
·
可再生能源
✓ 已验证
DOI
高影响因子
Energy & Environmental Science
·
2024
·
IF 32.4
Cong Liu,Anweng Gong,Chen Zuo,Tao Liu,Xiaoyang Liang,Donglou Ren,Kai Shen,Jianzha Zheng,Qifan Xue,Zhiqiang Li,Ruud E. I. Schropp,Bingsuo Zou,Yaohua Mai
High-quality heterojunctions are crucial for achieving high power conversion efficiency (PCE) in the antimony selenosulfide (Sb2(S,Se)3) solar cells. Here, we introduce lithium fluoride (LiF) doping of the precursor solution to improve the conductivity, morphology, and n-type characteristics of cadmium sulfide (CdS) films. In addition, Li-ions have high mobility, which enhances in situ diffusion into the Sb2(S,Se)3 absorber layer during subsequent hydrothermal deposition. Li effectively passivates selenium vacancies (VSe) and antimony anti-site (SbS) defects through the formation of Li–S(e) bonds. This lithiation process not only realizes a twofold optimization of the CdS buffer layer and the Sb2(S,Se)3 absorber layer, but also yields a favorable energy level arrangement and a wider depletion region at the CdS/Sb2(S,Se)3 heterojunction. By this way, we have achieved a champion PCE of 10.76% compared to a certified value of 10.50% for Sb2(S,Se)3 solar cells, which is the highest certified efficiency reported for Sb-based solar cells so far. This study provides a convenient method to optimize dual functional layers and heterojunctions for high-performance Sb2(S,Se)3 solar cells.
研究领域:
材料科学
·
能源科学
·
光伏技术
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
·
2020
·
IF 6.155
Liquan Yao,Limei Lin,Hui Liu,Fengying Wu,Jianmin Li,Shuiyuan Chen,Zhigao Huang,Guilin Chen
Antimony chalcogenide Sb 2 (S, Se) 3 is attracting a lot of attention as photovoltaic absorber owing to its rewarding photoelectric properties, low toxicity, and earth abundance. However, its device efficiency is still limited by the absorber material quality and device interface recombination. In this work, a fluorine-doped tin oxide (FTO) substrate with ultra-thin SnO 2 layer and a low-cost stabilized carbon paste are introduced as a front and back contact layer respectively in Sb 2 (S, Se) 3 based planar solar cells. Over 5.2 % efficiency is demonstrated in the structure of FTO/SnO 2 /CdS/Sb 2 (S, Se) 3 /Carbon/Ag, where the Sb 2 (S, Se) 3 is prepared by hydrothermal technique. The complementary device physics characterizations reveal that the interfacial recombination between TCO and CdS is significantly suppressed by the introduction of ultra-thin SnO 2 layer, which is profited from the leakage protection and bandgap offset engineering by its high resistivity and suitable conduction band minimum. Meanwhile, the successful adoption of the low-cost stabilized carbon as a back contact here shows an enormous potential to replace the conventional organic hole transport materials and noble metal. We hope this work can provide positive guidance to optimize Sb 2 (S, Se) 3 based planar solar cells in the future.
研究领域:
材料科学
·
光伏技术
·
可再生能源
✓ 已验证
DOI
高影响因子
Small
·
2024
·
IF 13
Lei Zhang,Jianzha Zheng,Cong Liu,Yifei Xie,Hanyu Lu,Qinrong Luo,Yulong Liu,Huidong Yang,Kai Shen,Yaohua Mai
Antimony selenosulfide (Sb 2 (S,Se) 3 ) is an emerging quasi-1D photovoltaic semiconductor with exceptional photoelectric properties. The low-symmetry chain structure contains complex defects and makes it difficult to improve electrical properties via doping method. This article reports a doping strategy to enhance the efficiency of Sb 2 (S,Se) 3 solar cells by using alkali halide (CsI) as the hydrothermal reaction precursor. It is found that the Cs and I ions are effectively doped and atomically coordinate with Sb ions and S/Se ions. The CsI-doping Sb 2 (S,Se) 3 absorbers exhibit enhanced grain morphologies and reduced trap densities. The consequential CsI-doping Sb 2 (S,Se) 3 based solar cells demonstrate favorable band alignment, suppressed carrier recombination, and improved device performance. An efficiency as high as 10.05% under standard AM1.5 illumination irradiance is achieved. This precursor-based alkali halide doping strategy provides a useful guidance for high-efficiency antimony selenosulfide solar cells.
研究领域:
材料科学
·
光伏技术
·
半导体物理
✓ 已验证
产品关联
DOI
PubMed
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2024
·
IF 13.3
Xiaomeng Ni,Jingjing Liu,Fangxian Xu,Jing Zhang,Sai Jiang,Bijun Fang,Huafei Guo,Ningyi Yuan,Jianning Ding,Shuai Zhang
Doping the light absorber layer of antimony chalcogenides with extrinsic ions is an effective approach for improving their photovoltaic quality. These dopant ions generally reside at positions other than the crystal lattice or form an alloy (e.g., AgSb(S,Se) 3 ) with a poor device performance. Therefore, incorporating such ions into an antimony chalcogenide lattice such that there is a positive influence on device quality would be highly useful. Herein, doping of Nd 3+ for Sb 2 (S,Se) 3 is carried out via a modified hydrothermal deposition process. Notably, these ions are incorporated into the crystal lattice and migrate to the CdS/Sb 2 (S,Se) 3 interface after doping, which are characterized using X-ray diffraction, X-ray photoelectron spectroscopy, and time-of-flight secondary ion mass spectrometry. Nd 3+ doping produces benign effects on the crystal orientation, film morphology, optoelectronic properties, and defect passivation of the Sb 2 (S,Se) 3 films. Consequently, all the photoelectrical parameters of Sb 2 (S,Se) 3 solar cells doped with Nd 3+ are enhanced, delivering a remarkable efficiency of 8.24 %. Furthermore, the best device stored in air only shows a slight decrease in efficiency in the 2400-h aging test. Overall, this study provides an effective doping strategy to improve the photovoltaic quality of Sb 2 (S,Se) 3 films.
研究领域:
材料科学
·
能源工程
✓ 已验证
产品关联
DOI
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2026
·
IF 12.5
Shengquan Shan,Jihao Ma,Yang Chen,Lun Zhang,Chengyang Wang,Yanrui Yang,Ru Zhou,Mei Lyu,Jun Zhu
An anion-cation synergistic strategy is adopted by TbCl 3 post-treatment in Sb 2 (S,Se) 3 solar cells. • This strategy induces the further growth of Sb 2 (S,Se) 3 with favorable crystal orientation. • TbCl 3 -treatment suppresses deep-level defects and adjusts band alignment of Sb 2 (S,Se) 3 films. • The champion device achieves a PCE of 10.11% with excellent stability. Antimony selenosulfide (Sb 2 (S,Se) 3 ) is a promising quasi-one-dimensional photovoltaic material in the application of solar cell field because of its outstanding optoelectronic properties. It is extremely difficult to achieve the Shockley-Queisser limit due to the presence of various defects and the less favorable (hk0) crystal orientation in Sb 2 (S,Se) 3 films. Here, we report an anion-cation synergistic strategy to enhance the quality of Sb 2 (S,Se) 3 films by terbium chloride post-treated process. Both Tb 3+ and Cl − ions are incorporated into the crystal lattice of Sb 2 (S,Se) 3 after post-treatment, which is confirmed by X-ray photoelectron spectroscopy and X-ray diffraction. This anion-cation synergistic effect promotes the Sb 2 (S,Se) 3 films to have a preferred (hk1) crystal orientation, larger grain size, suppressed deep-level defects and more favorable energy band alignment to facilitate charge carrier transport. Consequently, terbium chloride post-treatment enhances the performance of Sb 2 (S,Se) 3 solar cells, achieving a remarkable of 10.11%. Furthermore, the champion devices exhibit an excellent storage, humidity and thermal stability over 800 h aging test. This work provides a valuable strategy for fabricating high-quality of Sb 2 (S,Se) 3 films and high-efficiency inorganic horizontal and vertical PN heterostructure solar cells.
✓ 已验证
DOI
高影响因子
Solar RRL
·
2020
·Vol. 4
·期 9
·2000220
·
IF 7.527
Kanghua Li,Yue Lu,Xiaoxing Ke,Sen Li,Shuaicheng Lu,Chong Wang,Siyu Wang,Chao Chen,Jiang Tang
Antimony chalcogenides (including Sb 2 S 3 , Sb 2 Se 3 , and Sb 2 (S,Se) 3 alloy) have emerged as promising solar absorber materials. Notably, the Sb 2 (S,Se) 3 alloy possesses continuously tunable bandgap from 1.1 to 1.7 eV, which covers the ideal bandgap for single-junction photovoltaics governed by the Shockley–Queisser theory. Moreover, the bandgap gradient provides effective ways for photogenerated carriers collection and has the potential for high-efficient Sb 2 (S,Se) 3 alloy solar cells. Herein, a V-shaped distributional bandgap in Sb 2 (S,Se) 3 solar cells is reported through a simple dual-source vapor transport deposition process, enabling the synergetic increase of the open-circuit voltage ( V OC ) and short-circuit current ( J SC ). Through careful optimization, a power conversion efficiency of 7.27% under AM1.5G illumination is obtained, with V OC and J SC of 0.46 V and 29.6 mA cm −2 , respectively. This V-shaped bandgap engineering provides an effective method to enhance the device performance and can be extended to other chalcogenide thin-film solar cells such as Sn–X, Ge–X, Cu–Sb–X (X = S and Se), and so on.
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2022
·
IF 6.371
Yanlin Pan,Dongliang Zheng,Jianxin Chen,Jun Zhou,Rui Wang,Xingyu Pan,Xiaobo Hu,Shaoqiang Chen,Pingxiong Yang,Jiahua Tao,Junhao Chu
The vapor transport deposition (VTD) processing is one of the most promising techniques to fabricate quasi-one-dimensional antimony selenosulfide (Sb 2 (S,Se) 3 ) photovoltaic materials with micrometer-scale grains and preferred crystal orientations . However, current researches rarely involve the effect of evaporation source on the film growth by VTD. Herein, we adopt Sb 2 (S,Se) 3 tablets as evaporation sources to develop Sb 2 (S,Se) 3 solar cells for the first time. We find that increasing the evaporation source area can effectively improve the deposition rate of Sb 2 (S,Se) 3 films, leading to an enhancement of the (221) preferred orientation and columnar large grains of the absorber layers, further improves the device photovoltaic performance . With fine-tuning of the evaporation source area, the optimized Sb 2 (S,Se) 3 solar cells show a high efficiency up to 7.6%. This study proposes a unique strategy to improving the quality of low-dimensional materials and a deeper understanding of the growth mechanism via vacuum methods.
研究领域:
材料科学
·
太阳能技术
✓ 已验证
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2025
·
IF 19
Xiaoqi Peng,Zhentao Ma,Zixu He,Rongfeng Tang,Jianyu Li,Shuwei Sheng,Ting Wu,Yue Hu,Zhiyuan Cai,Zequan Jiang,Yuchen Li,Changfei Zhu,Ruiguo Cao,Xusheng Zheng,Tao Chen
For solar cells, interfacial chemical coordination, carrier transport, and energy alignment play critical roles in carrier transport and determine the final energy conversion efficiency. As an emerging solar technology, high-efficiency Sb 2 (S,Se) 3 solar cells typically utilize cadmium sulfide (CdS) as the interfacial electron transport layer. However, the poor chemical and electrical contact between F-doped SnO 2 (FTO) substrate and CdS presents a significant challenge to improving device performance. Here, an ultrathin SnO 2 layer is introduced, fabricated via chemical bath deposition, between FTO and CdS to address the interfacial coordination and transport problem. The non-invasive depth analysis based on synchrotron radiation X-ray photoelectron spectroscopy shows that this interfacial engineering approach facilitates the formation of S-Sn bonding at the FTO/CdS interface, which cannot be achieved on the conventional inert FTO surface. Additionally, the existence of an interfacial SnO 2 layer reduces the sulfur vacancy defect (V S ) in the CdS films, enhancing both electrical conductivity and crystallinity. Therefore, the solar cell demonstrates significantly enhanced carrier separation and transport performance. Ultimately, the Sb 2 (S,Se) 3 solar cells achieve a record fill factor exceeding 73%, with a championefficiency of 10.58%. This study presents an effective interfacial engineering strategy to enhance charge transport properties for high-performance Sb 2 (S,Se) 3 solar cells.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）