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Sb2S3薄膜
CATALYSIS LETTERS · 2017 ·Vol. 147 ·期 10 ·2592-2599 · IF 2.799

Fabrication and Photocatalytic Performance of Sb2S3 Film/ITO Combination

Guo Huiyun,Hou Wenlong,Liang Bo,Zhang Haiquan

Abstract A new method of using Sb 2 S 3 solution as precursor and drop-casting process for fabricating Sb 2 S 3 film/ITO combination with heterostructure is proposed. Effect of different substrates on photocatalytic performance was firstly investigated and the results reveal that formation of heterostructure in Sb 2 S 3 film/ITO combination promote the degradation rate of RhB. Graphical Abstract

研究领域: 材料科学 · 环境科学
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Advanced Materials Interfaces · 2021 ·Vol. 9 ·期 2 ·2101504 · IF 6.147

Depleted Sb2S3 Thin Film Photoconductive Detectors with Fast Response Speed and High Polarization Sensitivity

Yi Jia,Hui Deng,Xiao Lin,Shenzhong Chen,Yong Xia,Zhixu Wu,Jinling Yu,Shuying Cheng,Yunfeng Lai

Antimony sulfide (Sb 2 S 3 ) with high absorption coefficient reveals great potential for photodetectors (PDs) in various fields of military and national economy. A new type of depleted Sb 2 S 3 thin film photoconductive detector by using titanium dioxide (TiO 2 ) interlayer with the structure of Au/(glass/TiO 2 :)Sb 2 S 3 /Au is designed. Compared with normal Au/Sb 2 S 3 /Au devices, the depleted Sb 2 S 3 PDs obtain a higher switching ratio of 90, greatly enhancing responsivity and specific detectivity. Owing to the electric field of the depletion region, the response time significantly decreases from 23.2 to 0.6 ms. In addition, the anisotropic Sb 2 S 3 film with [120] dominated horizontal orientation is suitable for polarized light detection. The peak-to-valley ratio of the depleted Sb 2 S 3 PD reaches 1.3 at polarized light. The results and methods of this study are expected to expand the application of PDs based on Sb 2 S 3 films.

CAS / MDL: 1345-04-6
研究领域: 材料科学 · 光电探测
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JOURNAL OF ALLOYS AND COMPOUNDS · 2021 · IF 5.316

Efficient SnO2/CdS double electron transport layer for Sb2S3 film solar cell

Mingzhu Su,Zitong Feng,Zheng Feng,Hanxiao Chen,Xingyun Liu,Jian Wen,Hongri Liu

Sb 2 S 3 has been proven to be a very promising light absorbing material for photovoltaic applications due to its low cost, high stability, non-toxicity, and abundant elemental storage. Electron transport layer (ETL) is a very crucial factor to the performances of Sb 2 S 3 solar cells. Here we developed a simple chemical solution process method to synthesize SnO 2 colloidal and fabricated SnO 2 ETL at low-temperature first, and then SnO 2 /CdS double ETL was prepared by combining SnO 2 and CdS. The power conversion efficiency of Sb 2 S 3 solar cell is 5.3% based on the SnO 2 /CdS double ETL, whereas the device based on CdS ETL only exhibites a PCE of 4.3%. Experimental analyses revealed that the introduction of SnO 2 ETL enhanced the grain size of Sb 2 S 3 films and passivated interfacial defects thus enhancing device efficiency. Our results show the potential application of SnO 2 in the planar Sb 2 S 3 solar cell.

研究领域: 材料科学 · 光伏技术
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ADVANCED MATERIALS · 2023 ·Vol. 36 ·期 1 ·2305841 · IF 29.4

Grain Engineering of Sb2S3 Thin Films to Enable Efficient Planar Solar Cells with High Open-Circuit Voltage

Xinnian Liu,Zhiyuan Cai,Lei Wan,Peng Xiao,Bo Che,Junjie Yang,Haihong Niu,Huan Wang,Jun Zhu,Yi-Teng Huang,Huimin Zhu,Szymon J. Zelewski,Tao Chen,Robert L. Z. Hoye,Ru Zhou

Sb 2 S 3 is a promising environmentally friendly semiconductor for high performance solar cells. But, like many other polycrystalline materials, Sb 2 S 3 is limited by nonradiative recombination and carrier scattering by grain boundaries (GBs). This work shows how the GB density in Sb 2 S 3 films can be significantly reduced from 1068 ± 40 to 327 ± 23 nm µm −2 by incorporating an appropriate amount of Ce 3+ into the precursor solution for Sb 2 S 3 deposition. Through extensive characterization of structural, morphological, and optoelectronic properties, complemented with computations, it is revealed that a critical factor is the formation of an ultrathin Ce 2 S 3 layer at the CdS/Sb 2 S 3 interface, which can reduce the interfacial energy and increase the adhesion work between Sb 2 S 3 and the substrate to encourage heterogeneous nucleation of Sb 2 S 3 , as well as promote lateral grain growth. Through reductions in nonradiative recombination at GBs and/or the CdS/Sb 2 S 3 heterointerface, as well as improved charge-carrier transport properties at the heterojunction, this work achieves high performance Sb 2 S 3 solar cells with a power conversion efficiency reaching 7.66%. An impressive open-circuit voltage ( V OC ) of 796 mV is achieved, which is the highest reported thus far for Sb 2 S 3 solar cells. This work provides a strategy to simultaneously regulate the nucleation and growth of Sb 2 S 3 absorber films for enhanced device performance.

研究领域: 材料科学 · 光伏技术 · 半导体物理
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APPLIED SURFACE SCIENCE · 2013 · IF 2.112

Tunable surface wettability and water adhesion of Sb2S3 micro-/nanorod films

Xin Zhong,Huiping Zhao,Hao Yang,Yunling Liu,Guoping Yan,Rong Chen

Antimony sulfide (Sb 2 S 3 ) films were successfully prepared by spin coating Sb 2 S 3 micro-/nanorods with different sizes on glass slides, which was synthesized via a facile and rapid microwave irradiation method. The prepared Sb 2 S 3 micro-/nanorods and films were characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and water contact angle (CA). The as-prepared Sb 2 S 3 films exhibited different surface wettabilities ranging from superhydrophilicity to superhydrophobicity, which was strongly dependent on the diameter of Sb 2 S 3 micro-/nanorod. Sb 2 S 3 film made by nanorods possessed superhydrophobic surface and high water adhesive property. After surface modification with stearic acid, the superhydrophobic surface exhibited an excellent self-cleaning property owing to its low adhesive force. The clarification of three possible states including Wenzel's state, “Gecko” state and Cassie's state for Sb 2 S 3 film surfaces was also proposed to provide a better understanding of interesting surface phenomena on Sb 2 S 3 films.

CAS / MDL: 10025-91-9 79-19-6
研究领域: 材料科学 · 表面化学
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ChemSusChem · 2018 ·Vol. 11 ·期 18 ·3208-3214 · IF 7.411

Aqueous-Solution-Based Approach Towards Carbon-Free Sb2S3 Films for High Efficiency Solar Cells

Shi'ang Li,Yan Zhang,Rongfeng Tang,Xiaomin Wang,Tong Zhang,Guoshun Jiang,Weifeng Liu,Changfei Zhu,Tao Chen

Graphical An aqueous solution process was used to generate flat, compact, and carbon free Sb 2 S 3 films, leading to high efficiency in planar heterojunction Sb 2 S 3 solar cells. 3-mercaptopropionic acid was applied as both solvent and sulfur precursor, and aqueous ammonia was employed as a solvent. Planar heterojunction solar cell based on the as-prepared Sb 2 S 3 film delivered a power conversion efficiency of 5.57 %. Sb 2 S 3 is a new kind of photovoltaic material that is promising for practical application in solar cells owing to its suitable bandgap, earth-abundant elements, and excellent stability. Here, we report on an aqueous-solution-based approach for the synthesis of Sb 2 S 3 films from easily accessible Sb 2 O 3 as antimony source. In this reaction, 3-mercaptopropionic acid was applied as both solvent and sulfur precursor, aqueous ammonia was employed as a solvent. After simple annealing at a temperature as low as 270 °C, the spin-coated precursor solution can generate compact, flat, uniform, and well-crystallized Sb 2 S 3 film. Mechanistic study showed that the formation of Sb-complex with ammonium carboxylates leads to the successful dissolution of Sb 2 O 3 powder. A suitable annealing process was able to generate carbon-free Sb 2 S 3 films. Planar heterojunction solar cell based on the as-prepared Sb 2 S 3 film delivered a power conversion efficiency of 5.57 %, which is the highest efficiency of solution-processed planar heterojunction Sb 2 S 3 solar cells and a high value in all kinds of Sb 2 S 3 solar cells. This research provides a convenient approach for the fabrication of device-quality Sb 2 S 3 films, and highlights solution processing of carbon-free metal chalcogenide thin films as a suitable process for application in optoelectronic devices.

CAS / MDL: 107-96-0
研究领域: 材料科学 · 光电子学 · 可再生能源
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ELECTROANALYSIS · 2017 ·Vol. 29 ·期 12 ·2737-2743 · IF 2.851

A Novel Chemical Sensor Based on Sb2S3 Film for Highly Sensitive Detection of Hydrazine

Huiyun Guo,Wenlong Hou,Jingkai Yang,Lan Yu,Bo Liang,Haiquan Zhang

The Sb 2 S 3 film on indium-tin oxide (ITO) substrate has been used as an efficient electron transfer mediator for the fabrication of novel chemical sensor towards hydrazine, which is a diamine known as neurotoxin and carcinogen. Sb 2 S 3 film is deposited on ITO substrate by drop-casting process using Sb 2 S 3 solution as precursor and possesses reticular structure with the morphology of uniform hollow hemispheres. The fabricated chemical sensor for selective detection of hydrazine displays a high sensitivity of 106.25 μA/(mM cm 2 ) with a low detection limit of 0.5 μM and it also exhibits excellent reproducibility and stability in hydrazine detection.

研究领域: 分析化学 · 材料科学 · 环境监测
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SOLAR ENERGY · 2019 · IF 4.674

Substrate structured Sb2S3 thin film solar cells fabricated by rapid thermal evaporation method

Guoxing Pan,Dongxiao Wang,Shoushuai Gao,Peng Gao,Qiang Sun,Xingjiang Liu,Zhiqiang Zhou,Yun Sun,Yi Zhang

Sb 2 S 3 thin film solar cells have been attracting much attention because of its excellent the photoelectric properties. By now, all the works on Sb 2 S 3 solar cell were focused on the Sb 2 S 3 thin film solar cells with sensitized structure or superstrate structure. However, Sb 2 S 3 solar cell with substrate structure was rarely reported. The substrate structure of the Sb 2 S 3 solar cell has unique advantages in device interface optimization, film growth, and application on flexible devices, and so on. The study of the substrate structure has great significance for improving the efficiency of the device and expanding its application range. In this work, Sb 2 S 3 thin films were deposited on Mo-coated glass substrate by the rapid thermal evaporation (RTE) method. The Sb 2 S 3 thin film quality is improved by combining adjusting the substrate temperature and evaporation time. Finally, a 1.75% efficient Sb 2 S 3 thin film solar cells with the substrate configuration of SLG/Mo/Sb 2 S 3 /CdS/i-ZO/AZO/Ni:Al was fabricated. Experimental and SCAPS simulation results show that deep level defects in the absorber layer and interface of the absorber layer and the buffer layer are the main reason for limiting the efficiency of devices.

CAS / MDL: 1345-04-6
研究领域: 材料科学 · 光伏技术
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Journal of Materiomics · 2021 · IF 6.425

Effective additive for enhancing the performance of Sb2S3 planar thin film solar cells

Hui Zhou,Jian Han,Xingyu Pu,Xuanhua Li

Sb 2 S 3 is a promising photovoltaic absorber with appropriate bandgap, excellent light absorption coefficient and great stability. However, the power conversion efficiency (PCE) of Sb 2 S 3 planar thin film solar cells is unsatisfactory for further commercial application due to low crystallinity and high resistivity of Sb 2 S 3 film. Here, we introduce an additive of 4-Chloro-3-nitrobenzenesulfonyl Chloride (CSCl) to alleviate these problems. The CSCl molecular contains two terminal Cl with lone pair electrons, which have the interaction with Sb atoms. Thus, the Sb 2 S 3 film with enhanced crystallization and low trap states has been obtained and the resistivity is also decreased. Furthermore, CSCl additive raises the Fermi level of the Sb 2 S 3 film, thereby enhancing the transport of electron from Sb 2 S 3 to TiO 2 . Consequently, the optimal PCE of Sb 2 S 3 solar cells is raised from 4.20% (control device) to 5.84%. Our research demonstrates a novel additive to enhance the photoelectric performance of Sb 2 S 3 solar cells.

研究领域: 材料科学 · 太阳能电池技术
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ACS Applied Materials & Interfaces · 2018 · IF 8.097

n-Type Doping of Sb2S3 Light-Harvesting Films Enabling High-Efficiency Planar Heterojunction Solar Cells

Rongfeng Tang,Xiaomin Wang,Chenhui Jiang,Shiang Li,Weifeng Liu,Huanxin Ju,Shangfeng Yang,Changfei Zhu,Tao Chen

Sb2S3 is a kind of new light-absorbing material possessing high stability in ambient environment, high absorption coefficient in the visible range, and abundant elemental storage. To improve the power conversion efficiency of Sb2S3-based solar cells, here we control the defect in Sb2S3 absorber films. It is found that the increase of sulfur vacancy is able to upgrade photovoltaic properties. With the increase in sulfur vacancy, the carrier concentrations are increased. This n-type doping gives rise to an upshift of the Fermi level of Sb2S3 so that the charge transport from Sb2S3 to the electron selection material becomes dynamically favorable. The introduction of ZnCl2 in film fabrication is also found to regulate the film growth for enhanced crystallinity. Finally, the photovoltaic parameters, short-circuit current density, open-circuit voltage, and the fill factor of the device based on the Sb2S3 film are all considerably enhanced, boosting the final power conversion efficiency from 5.15 to 6.35%. This efficiency is the highest value in planar heterojunction Sb2S3 solar cells and among the top values in all kinds of Sb2S3 solar cells. This research provides a fundamental understanding regarding the properties of Sb2S3 and a convenient approach for enhancing the performance of Sb2S3 solar cells.

CAS / MDL: 10025-91-9
研究领域: 材料科学 · 光伏技术
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ACS Applied Materials & Interfaces · 2022 · IF 10.383

Self-Powered Sb2S3 Thin-Film Photodetectors with High Detectivity for Weak Light Signal Detection

Xiao Lin,Hui Deng,Yi Jia,Zhixu Wu,Yong Xia,Xingjian Wang,Siwei Chen,Yingshun Cheng,Qiao Zheng,Yunfeng Lai,Shuying Cheng

Photodetectors (PDs) for weak light signal detection have wide applications for optical communication and imaging. Antimony sulfide (Sb2S3) as a nontoxic and stable light-sensitive material becomes a promising candidate for weak light PDs, which are developing in the direction of high response, high speed, and low cost. Herein, a self-powered Sb2S3 PD with the structure of FTO/TiO2/Sb2S3/Au is developed to achieve weak light detection for 300–750 nm visible light. We control the Sb2S3 thickness with about 460 nm to match depletion region width (438 nm) and obtain an excellent photoresponsivity and 3 dB bandwidth. Furtherly, we prepare pyramid structure polydimethylsiloxane (PDMS) on the illuminating surface to enhance the performance of weak light detection by light-trapping effects. The photocurrent of Sb2S3 PD with 20 μm-sized PDMS texture achieves 13.6% improvement compared with the control one. Under weak 530 nm light illumination of 1 μW cm–2, the self-powered Sb2S3 PD with PDMS achieves high responsivity (3.41 A W–1), large detectivity (2.84 × 1013 Jones), and ultrafast speed (15 μs). The present Sb2S3 PD and light-trapping strategy are expected to provide an alternative to future commercial weak light detection applications.

CAS / MDL: 1345-04-6
研究领域: 材料科学 · 光电技术
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