Energies
·
2024
·Vol. 17
·期 2
·406
·
IF 3
Musa Abubakar Bilya,Aleksey Nabok,Yashodhan P. Purandare,Ashfaque E. Alam,I. M. Dharmadasa
In this study, a two-electrode electrodeposition technique was employed to grow thin films of antimony selenide (Sb2Se3) on glass/fluorine-doped tin oxide (FTO) substrates. The highest quality thin films were consistently obtained within the range of 1600 mV to 1950 mV. Subsequent electrodeposition experiments were conducted at discrete voltages to produce various layers of thin films. Photoelectrochemical cell (PEC) measurements were performed to characterize the semiconductor material layers, leading to the identification of both p-Type and n-Type conductivity types. Optical absorption spectroscopic analysis revealed energy bandgap values ranging from 1.10 eV to 1.90 eV for AD-deposited Sb2Se3samples and 1.08 eV to 1.68 eV for heat-treated Sb2Se3samples, confirming the semiconducting nature of the Sb2Se3material. Additionally, other characterization techniques, including X-ray diffraction analysis, reveal that the AD-deposited layers are almost amorphous, and heat treatment shows that the material is within the orthorhombic crystalline system. Heat-treated layers grown at ~1740 mV showed highly crystalline material with a bandgap nearing the bulk bandgap of Sb2Se3. Raman spectroscopy identified vibrational modes specific to the Sb2Se3phase, further confirming its crystallinity. To explore the thin-film morphology, Scanning Electron Microscopy (SEM) was employed, revealing uniformly deposited material composed of grains of varying sizes at different voltages. Energy Dispersive X-ray analysis (EDX) confirmed the presence of antimony and selenium in the material layers.
研究领域:
材料科学
·
半导体物理
·
太阳能电池
✓ 已验证
DOI
高影响因子
JOURNAL OF POWER SOURCES
·
2025
·
IF 7.9
Huiying Cheng,Jingchang Sun,Siwen Liu,Furong Cao,Liuting Shan,Zijiang Yang,Xiaofan Cui,Jiaxu Zhao,Zhen Qiao,Qiuju Feng
Low-grade heat (<100 °C) is abundant and ubiquitous in the environment, and the recovery of low-grade heat energy will be of great significance for the energy supply and the improvement of the environment. Low-cost and effective technologies for transforming low-grade heat into electricity are urgently needed. Thermocell (TEC) based on REDOX couples has become a promising technology for low-grade heat harvesting due to its advantages of low cost, scalability, and intrinsic high thermopower. To enhance its performance, different types of TECs need to incorporate various additives into the REDOX couples. However, there is currently no identical additive that effectively enhances the performance of both P-type and N-type TECs. In this paper, carboxylated chitosan is used as an identical additive, resulting in an increase in the Seebeck coefficient of P-type and N-type TECs by 115.33 % and 53.25 %, respectively. Furthermore, we introduce a novel sandwich-structured packing technique featuring a configuration of Metal/PET film/Carbon felt (MPC) for TEC. This approach effectively reduces both the cost and weight of the TEC, while the MPC structure further enhances their performance. The TEC can be scaled up to power electrical devices. Our achievement provides an effective strategy for harvesting low-grade heat energy.
研究领域:
能源材料
·
环境科学
✓ 已验证
产品关联
DOI
高影响因子
Science China-Materials
·
2025
·
IF 7.4
Guo Ruiang,Li Shuaiqi,Zhang Jiawei,Tian Yi,Dong Weiguo,He Duanwei
Diamond is known as the ultimate semiconductor owing to its excellent physical properties. However, the high difficulty of n-type doping and the poor electrical performance of n-type diamonds remain major challenges for the application of diamond semiconductor materials. In this paper, a high-pressure thermal diffusion method for the n-type doping of diamond, which utilizes high pressure to reduce the volume difference between phosphorus atoms and carbon atoms, is reported for the first time. This method can achieve efficient doping and ionization of phosphorus atoms at the lattice sites of diamond. The prepared phosphorus-doped diamond exhibited the lowest resistivity (2 Ω cm) and highest electron concentration (2.27 × 10 18 cm −3 ) observed in any known phosphorus-doped diamond single crystal at room temperature (300 K). The high-pressure thermal diffusion method provides an effective approach for diamond n-type doping, which may play an important role in the design and preparation of future diamond-based semiconductor devices.
研究领域:
材料科学
·
半导体物理
✓ 已验证
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2020
·Vol. 30
·期 12
·1909972
·
IF 16.836
Yu Han,Huan Zhao,Chenyang Duan,Shaomin Yang,Zhou Yang,Zhike Liu,Shengzhong (Frank) Liu
Cesium-based inorganic perovskites, such as CsPbI 2 Br, are promising candidates for photovoltaic applications owing to their exceptional optoelectronic properties and outstanding thermal stability. However, the power conversion efficiency of CsPbI 2 Br perovskite solar cells (PSCs) is still lower than those of hybrid PSCs and inorganic CsPbI 3 PSCs. In this work, passivation and n-type doping by adding CaCl 2 to CsPbI 2 Br is demonstrated. The crystallinity of the CsPbI 2 Br perovskite film is enhanced, and the trap density is suppressed after adding CaCl 2 . In addition, the Fermi level of the CsPbI 2 Br is changed by the added CaCl 2 to show heavy n-type doping. As a result, the optimized CsPbI 2 Br PSC shows a highest open circuit voltage of 1.32 V and a record efficiency of 16.79%. Meanwhile, high air stability is demonstrated for a CsPbI 2 Br PSC with 90% of the initial efficiency remaining after more than 1000 h aging in air.
研究领域:
材料科学
·
光伏技术
·
能源研究
✓ 已验证
DOI
高影响因子
Materials
·
2022
·Vol. 15
·期 15
·5331
·
IF 3.748
Min Sun,Pengyu Zhang,Qingmin Li,Guowu Tang,Ting Zhang,Dongdan Chen,Qi Qian
N-type bismuth telluride (Bi2Te3) based thermoelectric (TE) fibers were fabricated by thermal drawing and Bridgman annealing, and the influence of Bridgman annealing on the TE properties of n-type Bi2Te3-based TE fibers was studied. The Bridgman annealing enhanced the electrical conductivity and Seebeck coefficient because of increasing crystalline orientation and decreasing detrimental elemental enrichment. The TE performance of n-type Bi2Te3-based TE fibers was improved significantly by enhancing the power factor. Hence the power factor increased from 0.14 to 0.93 mW/mK2, and the figure-of-merit value is from 0.11 to 0.43 at ~300 K, respectively.Keywords:n-type Bi2Te3;thermoelectric fibers;thermal drawing;Bridgman annealing
研究领域:
材料科学
·
热电学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2025
·
IF 19
Boxiang Gao,Yan Yan,Shuai Zhang,Zenghui Wu,You Meng,Yuxuan Zhang,Weijun Wang,Yi Shen,Siliang Hu,Bowen Li,He Shao,Pengshan Xie,SenPo Yip,Johnny C. Ho
Van der Waals (vdWs) p–n junctions assembled from 2D materials offer enhanced flexibility for creating versatile electronic and optoelectronic devices, attracting significant interest. However, the lack of reliable methods to produce high-quality p-type 2D semiconductors, especially patterned p-type channels, remains a major challenge for progress in the field. Here, a precise substitutional doping strategy for 2D semiconductors is presented, enabling the production of millimeter-scale WS 2 single-crystal thin films with tailored p-type and n-type properties. This advancement supports the fabrication of high-performance WS 2 -based p-type and n-type field-effect transistor (FET) miniaturized arrays with near-ohmic contact. Building on this progress, a WS 2 van der Waals homojunction p-n array demonstrating distinct anti-ambipolar behavior and excellent rectification characteristics is developed. In self-powered photodetection mode, leveraging the strong coupling of the vdWs homojunction interface, the device achieves an exceptional photovoltaic effect with a high specific detectivity of 3.4 × 10 10 Jones and a fast response time of 400 µs. The development of WS 2 p-n homojunction arrays presents immense potential for advancing next-generation logic electronics and optoelectronic devices, opening new avenues for large-scale industrial applications.
研究领域:
材料科学
·
电子工程
·
光学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2023
·Vol. 34
·期 7
·1-13
·
IF 2.8
Guo Yitong,Du Jingyang,Hu Meihua,Wei Bin,Su Taichao,Zhou Aiguo
In this paper, the thermoelectric (TE) performance of Bi 2 Te 3 was improved by the incorporation of Mo 2 C MXene, which is a novel two-dimensional material with moderate TE performance. The TE properties of Mo 2 C MXene were characterized from bulk samples bonded with 5 wt% Al sintered by spark plasma sintering (SPS) at 623 K for 6 min. Due to the very weak TE performance of Al, the performance of Mo 2 C MXene/Al composite reflects that of Mo 2 C MXene. It is an N-type conductor with the Seebeck coefficient of − 9.25 µV/K at 600 K. This is the first report to characterize the TE performance of Mo 2 C MXene bulk samples. Thereafter, Bi 2 Te 3 /Mo 2 C MXene composite powders were prepared from Mo 2 C MXene powers and precursors of Bi 2 Te 3 by hydrothermal method at 453 K for 24 h. The bulk samples of Bi 2 Te 3 incorporated with Mo 2 C MXene was obtained by SPS at 523 K for 7 min. The composites are N-type conductors. The electrical conductivity was remarkably increased with the content of Mo 2 C MXene, while the thermal conductivity slightly decreased. The sample with 5 vol% Mo 2 C MXene showed the optimal thermoelectric properties, and its ZT value was 0.26 at 473 K. At 450 K, the ZT value (~ 0.25) of that sample was 78.6% higher than that of Bi 2 Te 3 (~ 0.14). This is the first report on regulating TE performance by the incorporation of Mo 2 C MXene, a 2D material with intrinsic TE performance.
研究领域:
材料科学
·
热电材料
·
纳米技术
✓ 已验证
产品关联
DOI
高影响因子
Nature Communications
·
2025
·Vol. 16
·期 1
·1-12
·
IF 15.7
Zheng Yizhen,Lin Xing,Li Jiongzhao,Chen Jianan,Wu Wenhao,Song Zixuan,Gao Yuan,Hu Zhuang,Wang Huifeng,Ye Zikang,Qin Haiyan,Peng Xiaogang
Quantum-dot optoelectronics, pivotal for lighting, lasing and photovoltaics, rely on nanocrystalline oxide electron-injection layer. Here, we discover that the prevalent surface magnesium-modified zinc oxide electron-injection layer possesses poor n-type attributes, leading to the suboptimal and encapsulation-resin-sensitive performance of quantum-dot light-emitting diodes. A heavily n-doped nanocrystalline electron-injection layer—exhibiting ohmic transport with 1000 times higher electron conductivity and improved hole blockage—is developed via a simple reductive treatment. The resulting sub-bandgap-driven quantum-dot light-emitting diodes exhibit optimal efficiency and extraordinarily-high brightness, surpassing current benchmarks by at least 2.6-fold, and reaching levels suitable for quantum-dot laser diodes with only modest bias. This breakthrough further empowers white-lighting quantum-dot light-emitting diodes to exceed the 2035 U.S. Department of Energy’s targets for general lighting, which currently accounts for ~15% of global electricity consumption. Our work opens a door for understanding and optimizing carrier transport in nanocrystalline semiconductors shared by various types of solution-processed optoelectronic devices.
研究领域:
材料科学
·
光电子学
·
半导体物理
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Science Advances
·
2023
·Vol. 9
·期 43
·
IF 13.6
Wei Zhao,Yiwei Zheng,Meng Jiang,Tingting Sun,Aibin Huang,Lianjun Wang,Wan Jiang,Qihao Zhang
Ionic liquid–based ionogels emerge as promising candidates for efficient ionic thermoelectric conversion due to their quasi-solid state, giant thermopower, high flexibility, and good stability. P-type ionogels have shown impressive performance; however, the development of n-type ionogels lags behind. Here, an n-type ionogel consisting of polyethylene oxide (PEO), lithium salt, and ionic liquid is developed. Strong coordination of lithium ion with ether oxygen and the anion-rich clusters generated by ion-preferential association promote rapid transport of the anions and boost Eastman entropy change, resulting in a huge negative ionic Seebeck coefficient (−15 millivolts per kelvin) and a high electrical conductivity (1.86 millisiemens per centimeter) at 50% relative humidity. Moreover, dynamic and reversible interactions among the ternary mixtures endow the ionogel with fast autonomous self-healing capability and green recyclability. All PEO-based ionic thermoelectric modules are fabricated, which exhibits outstanding thermal responses (−80 millivolts per kelvin for three p-n pairs), demonstrating great potential for low-grade energy harvesting and ultrasensitive thermal sensing.
研究领域:
材料科学
·
能源转换
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Advanced Electronic Materials
·
2021
·Vol. 7
·期 3
·2001003
·
IF 7.295
Zuoxiang Xie,Kai Feng,Yan Xiong,Xu Chen,Yudong Liang,Kamran Abid,Ling Xu
In recent years, organic–inorganic hybrid halide perovskite materials have been found to have low thermal conductivity and a large Seebeck effect, giving them great potential for thermoelectric applications. More stable single crystals make this possible. In this work, high-quality MAPbI 3 single crystals are prepared using a modified solvent engineering method, and their trap density is as low as 2.5 × 10 9 cm −3 . It is noticed that the reaction between the crystal a metal electrode causes different degrees of doping effect along the vertical direction, leading to an increase in the intrinsic P-type with Au metal, and forming N-type semiconductor characteristics with Ag metal. A high Seebeck voltage thermoelectric module is obtained by combining the perovskite single crystal with different conductive characteristics. After device optimization, the thermoelectric potential of the champion module reaches a high voltage of 337 mV at 115 °C, the maximum output power with load reaches about 30 nW, and the theoretical maximum power reaches 65 nW. It is hoped that this research can promote the development of low thermal conductivity perovskite materials in the thermoelectric field.
研究领域:
材料科学
·
能源技术
·
物理学
✓ 已验证
DOI
高影响因子
INORGANIC CHEMISTRY
·
2018
·
IF 4.7
Xiaofang Li,Chen Chen,Wenhua Xue,Shan Li,Feng Cao,Yuexing Chen,Jiaqing He,Jiehe Sui,Xingjun Liu,Yumei Wang,Qian Zhang
An n-type Bi-doped SnSe was synthesized by a facile solution method followed by spark plasma sintering. We used bismuth(III) 2-ethyhexanoate as a cationic dopant precursor, which can absorb on the powder surface and then diffuse into the lattice to realize the substitution of Sn by Bi. A strip structure with low-angle boundary was constructed for effective phonon scattering. With increasing content of Bi, the carrier concentration decreased from 1.35 × 1019 cm–3 (p-type) in undoped SnSe to 4.7 × 1014 cm–3 (n-type) in Sn0.99Bi0.01Se and then increased to 1.3 × 1015 cm–3 (n-type) in Sn0.97Bi0.03Se. The Seebeck coefficient changed from positive to negative and presented n-type conducting behavior in the whole measured temperature range from 300 to 773 K, reaching a maximum absolute value of ∼900 μV K–1 at room temperature and ∼300 μV K–1 at 773 K. Considering the rich variety of metal 2-ethylhexanoates, higher thermoelectric performance is expected by different cationic doping in solution-synthesized nanomaterials.
研究领域:
材料科学
·
热电能源
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Materials
·
2023
·Vol. 16
·期 7
·2548
·
IF 3.4
Nailing Qin,Yehai Pang,Zhengbing Xu,Xiyong Chen,Jialin Yan
Double-layered manganites are natural superlattices with low thermal conductivity, which is of importance for potential thermoelectric applications. The Gd2−2xSr1+2xMn2O7(x= 0.5; 0.625; 0.75) were prepared by the solid-state reaction method. All the samples crystallize in the tetragonal I4/mmm Sr3Ti2O7type structure. The unit cell volume and the distortion in the MnO6octahedra increase with increasing Gd content. Their thermoelectric properties were investigated between 300 and 1200 K. All exhibit ann-type semiconducting behavior. The electrical conductivity (σ) increases while the absolute value of the Seebeck coefficient (|S|) decreases with increasing Gd content. Simultaneous increases inσand |S| with increasing temperature are observed at temperatures approximately higher than 600 K, and the power factor reaches a maximum value of 18.36 μW/(m K²) forx= 0.75 at 1200 K. The thermal conductivity (κ) is lower than 2 W/(m K) over the temperature range of 300–1000 K for all the samples and a maximum dimensionless figure of meritZTof 0.01 is obtained forx= 0.75 at 1000 K.Keywords:double-layered manganites;crystal structure;thermoelectric properties;n-type perovskite oxides
研究领域:
材料科学
·
物理学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）