Frontiers in Chemistry
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2020
·
IF 3.693
Li Yujiao,Li Chen,Yu Huanqin,Yuan Beilei,Xu Fan,Wei Haoming,Cao Bingqiang
To regulate the optical and electrical properties of the crystals and films of the intrinsic methylammonium lead iodide (CH3NH3PbI3), we dope them with sodium (Na) by selecting sodium iodide (NaI) as a dopant source. The highly conductive p-type sodium-doped CH3NH3PbI3 (MAPbI3: Na) perovskite single crystals and thin films are successfully grown using the inverse temperature crystallization (ITC) method and antisolvent spin-coating (ASC) method, respectively. With the increase of Na+ doping concentration, the grain size of the film increases, the surface becomes smoother, and the crystallinity improves. Hall effect results demonstrate that both the MAPbI3: Na thin films and single crystals change their quasi-insulating intrinsic conductivity to a highly conductive p-type conductivity. The room-temperature photoluminescence (PL) peaks of doped MAPbI3 films slightly blue shift, while the photocarriers' lifetime becomes longer. The optical fingerprints of the doped levels in MAPbI3: Na perovskites can be identified by temperature-dependent PL. Obvious fingerprints of Na-related acceptor (A0X) levels in the doped MAPbI3: Na were observed at 10 K. These results suggest that sodium doping is an effective way to grow highly conductive p-type MAPbI3 perovskites.
研究领域:
材料科学
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物理化学
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产品关联
DOI
PubMed
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
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2017
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IF 3.133
Shenjie Li,Tianyong Zha,Qiang Wang,Chengyu Wang,Yujiao Ren,Yanyan Chen,Daocheng Pan
We present a facile route for the fabrication of P-type Cu x S transparent and conducting thin films (TCTFs) using copper (I) oxide and butyl-dithiocarbamic acid as precursors by pulling method on glass. The as-deposited highly conductive crystalline Cu x S films showed high carrier concentration (∼3.11 × 10 22 cm −3 ), low electrical resistivity (∼1.02 × 10 −4 Ω cm) and conclusive p-type conduction. X-ray diffraction studies showed high crystallinity, and the optical transmission spectra in UV–vis–NIR region of such films were recorded, indicating that the transparency was over 75% with a band gap of 1.52 eV. The room-temperature sheet resistance increased from 9.9 to 302.4 Ω sq −1 with increasing baking temperature. The Cu x S/quantum dot bifacial thin films have been fabricated, and the experimental results indicated that luminescent, transparent, and conductive Cu x S/Cu-doped Zn y Cd 1-y S thin films have a very high potential application in thin film solar cells.
研究领域:
材料科学
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光电材料
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太阳能电池
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DOI
高影响因子
ACS Applied Materials & Interfaces
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2022
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IF 10.383
Xiangbao Yuan,Haiyun Li,Jing Fan,Lin Zhang,Feng Ran,Menglei Feng,Peiyuan Li,Weixiang Kong,Shijian Chen,Zhigang Zang,Shuangpeng Wang
The effect of substitutional metal dopants in NiOx on the structural and electronic structures is of great interest, particularly for increasing the p-type conductivities as a hole transport layer (HTL) applied in perovskite solar cells (PSCs). In this paper, experimental fabrications and density functional theory calculations have been carried out on Cd-doped NiOx films to examine the effect of divalent doping on the electronic and geometric structures of NiOx. The results indicate that divalent Cd dopants reduced the formation energy of the Ni vacancy (VNi) and created more VNi in the films, which enhanced the p-type conductivity of the NiOx films. In addition, Cd doping also deepened the valence band edge, reduced the monomolecular Shockley–Read–Hall (SRH) recombination losses, and promoted hole extraction and transport. Hence, the PSCs with Cd:NiOx HTLs manifest a high efficiency of 20.47%, a high photocurrent density of 23.00 mA cm–2, and a high fill factor of 79.62%, as well as negligible hysteresis and excellent stability. This work illustrates that divalent elements such as Cd, Zn, Co, etc. may be potential dopants to improve the p-type conductivity of the NiOx films for applications in highly efficient and stabilized PSCs.
研究领域:
材料科学
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能源科学
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计算化学
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DOI
PubMed
高影响因子
Science China-Materials
·
2015
·Vol. 58
·期 9
·693-703
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IF 0
Liu Jian,Zhao Yuheng,Liu Jialong,Wang Shouguo,Cheng Yan,Ji Muwei,Zhou Yuanmin,Xu Meng,Hao Weichang,Zhang Jiatao
Heterovalent doping represents an effective method to control the optical and electronic properties of semiconductor nanocrystals (NCs), such as the luminescence and electronic impurities (p-, n-type doping). Considering the phase structure diversity, coordination varieties of Cu atoms in Cu 2 S NCs, and complexity of Cu doping in II-VI NCs, monodisperse Cu 2 S NCs with pure hexagonal phase were synthesized firstly. Then through cation exchange reaction between Cd ions and well-defined Cu 2 S NCs, dominant Cu(I) doped CdS NCs were produced successfully. The substitutional Cu(I) dopants with controllable concentrations were confirmed by local atom-specific fine structure from X-ray absorption near edge structure (XANES), extended X-ray absorption fine structure (EXAFS) spectroscopy, elemental analysis characterizations from X-ray photoelectron spectroscopy (XPS) and the electron spin resonance (ESR) measurement. The dominant and strong Cu(I) dopant fluorescence was verified by their absorption and photoluminescence (PL) spectra, and PL lifetime. Finally, the band positions and the p-type conductivities of the as-prepared Cu 2 S and Cu(I) doped CdS NCs were identified by ultraviolet photoelectron spectroscopy (UPS) measurements. The high monodispersity of NCs enables their strong film-scale self-assembly and will hasten their subsequent applications in devices.
研究领域:
材料科学
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半导体物理
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产品关联
DOI
Matter
·
2025
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IF 17.5
Jun Liu,Jianen Zhang,Qi Xue,Huiying Gao,Shirui Zhang,Jinfeng Xie,Li Guan,Xiaohong Zhang,He Huang
The development of high-performance transparent conductors (TCs) is critical for advancing transparent electronics and optoelectronic devices. While n-type TCs are well established, the development of p-type TCs remains hindered by the limited availability of suitable materials. In this study, the layered double perovskite Cs 4 ZnBi 2 Cl 12 was synthesized as a promising p-type TC, which exhibits a wide direct band gap of 3.56 eV and intrinsic p-type conductivity. A hydration-mediated strategy was developed to trigger a near-spherical nanocrystal-to-nanorod transformation and modulate the electronic structure. First-principles calculations clarify that the lattice compressive strain induced by hydration significantly reduces the hole effective mass while increasing conductivity from 8.99 to 9.21 mS cm −1 , outperforming traditional p-type TCs, such as CuAlO 2 (3.4 mS cm −1 ) and SrCu 2 O 2 (0.48 mS cm −1 ). These findings not only provide experimental validation of the theoretical predictions regarding Cs 4 ZnBi 2 Cl 12 as a p-type TC but also establish a hydration strategy for optimizing the optical and electrical performance of layered double perovskites.
研究领域:
材料科学
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光电子学
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凝聚态物理
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纳米材料
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电子结构理论
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产品关联
DOI
高影响因子
ACS Nano
·
2022
·
IF 18.027
Xuefang Lu,Richeng Lin,Yuqiang Li,Ying Ding,Yali Liang,Lemin Jia,Zhuogeng Lin,Siqi Zhu,Feng Huang,Wei Zheng
An urgent demand for electronic and optoelectronic devices able to work in extreme environments promotes a series of research studies on semiconductor materials. Cubic boron phosphide (BP) as a semiconductor material with excellent characteristics shows great application potential. However, since the synthesis conditions required are difficult to achieve and the growth mechanism of BP is still unclear, there are few reports on the basic properties of BP and pure isotope BP, resulting in a narrow understanding of their special physical properties. Here, we successfully obtained highly pure isotopic 10BP crystals by a vapor–liquid–solid (VLS) method unconventionally designed, which successfully overcomes the thermodynamic conflict between the high melting point of the boron element and low sublimation temperature of the phosphorus element. The 10BP achieved owns an aspect ratio as high as 104 and a hardness up to 41 GPa. Besides, as an indirect bandgap semiconductor, it has ultrawide red emission spectra, a p-type conductivity with extremely low resistivity, and excellent photoelectronic and piezoelectric characteristics. Furthermore, compared with other superhard semiconductors like cubic BN and diamond, 10BP has an obvious advantage of lower growth temperature (1200 °C). All these characteristics confirm the prospects owned by 10BP in its applications to the field of high-conductivity, optoelectronic, strain-sensing, and superhard semiconductors.
研究领域:
材料科学
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半导体物理
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光电技术
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纳米技术
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机械工程
✓ 已验证
DOI
PubMed
高影响因子
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