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ACS Applied Materials & Interfaces · 2023 · IF 9.5

High Thermoelectric Performance in Cu-Doped Bi2Te2.7Se0.33 Due to Cl Doping and Multiscale AgBiSe2

Abubakar Yakubu Haruna,Yubo Luo,Zheng Ma,Wang Li,Haiqiang Liu,Xin Li,Qinghui Jiang,Junyou Yang

The thermoelectric performance of n-type Bi2Te3 needs further enhancement to match that of its p-type Bi2Te3 counterpart and should be considered for competitive applications. Combining Cu/Cl and multiscale additives (AgBiSe2) presents a suitable route for such enhancement. This is evidence of the enhanced thermoelectric performance of Bi1.995Cu0.005Te2.69Se0.33Cl0.03. Moreover, by incorporating 0.65 wt % AgBiSe2 (ABS) into Bi1.995Cu0.005Te2.69Se0.33Cl0.03, we further reduce its lattice thermal conductivity to ∼0.28 W m–1 K–1 at 353 K owing to the extra phonon scattering of multiscale ABS. Additionally, the Seebeck coefficient enhances (−183.89 μV K–1 at 353 K) owing to the matrix’s reduced carrier concentration caused by ABS. As a result, we achieve a high ZT of ∼1.25 (at 353 K) and a high ZTave of ∼1.12 at 300–433 K for Bi1.995Cu0.005Te2.69Se0.33Cl0.03 + 0.65 wt % ABS. This work provides a promising strategy for enhancing the thermoelectric performance of n-type Bi2Te3 through Cu/Cl doping and ABS incorporation.

研究领域: 材料科学 · 能源材料 · 热电材料优化
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Acta Metallurgica Sinica-English Letters · 2025 · IF 3.9

Impact of CuFeS2 on the Thermoelectric Performance of SnTe

Yuan Baocheng,Wen Yi,Wang Lei,Li Zhihao,Wang Hong-Chao,Chang Cheng,Zhao Li-Dong

Thermoelectric materials possess tremendous potential in energy regeneration owing to their capacity to produce power directly from heat. SnTe, a lead-free compound, is a prospective thermoelectric material. However, because of its elevated thermal conductivity, the thermoelectric performance of undoped SnTe remains at a low level. In this work, we induce ternary compounds CuFeS 2 into the SnTe matrix by ball milling. We observe the decomposition of CuFeS 2 , which decomposes into FeS, Cu 2 S, and other binary compounds. These newly generated binary compounds form micropores and secondary phases in the matrix. Combined with the natural grain boundaries in the polycrystal, they form all-scale hierarchical structures within the material, resulting in reduced lattice thermal conductivity. Overall, the produced SnTe + 2 wt% CuFeS 2 composites show the peak dimensionless figure of merit ( ZT ) up to 0.33 at 673 K, an increase of ~ 100% compared to the undoped SnTe.

CAS / MDL: 13494-80-9
研究领域: 材料科学 · 能源工程
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JOURNAL OF ELECTRONIC MATERIALS · 2018 ·Vol. 47 ·期 12 ·7514-7519 · IF 1.566

Enhancement of the Thermoelectric Properties of Cu1.98Se by Na Doping

Zhu Z.,Zhang Y. W.,Song H. Z.,Li X. J.

Cu 1.98− x Na x Se nanopowders were synthesized using a hydrothermal method and hot-pressed into bulk pellets to assess the effects of Na doping on the thermoelectric properties of Cu 1.98 Se. The original layered microstructure was maintained at low doping levels, although nanopores, together with point defects, appeared to decrease the thermal conductivity. The thermoelectric properties of the material were improved by Na doping, resulting in a maximum ZT value of 1.32 for Cu 1.94 Na 0.04 Se at 973 K. The experimental data indicate that an optimal level of Na doping effectively improves the thermoelectric performance of non-stoichiometric Cu 1.98 Se.

研究领域: 材料科学 · 热电学
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CRYSTAL GROWTH & DESIGN · 2020 · IF 4.089

Bi8Se9: Effective Reduction of Bipolar Diffusion via Increasing Band Gap

Rui Wang,Fei Jia,Xuan Li,Ling Chen,Li-Ming Wu

The binary Bi/Se system with the general formula [Bi2]m[Bi2Se3]n exhibits intriguing properties, such as topological insulator and thermoelectric properties, and attracts intense attention. Herein, we found that the thermoelectric properties of BiSe at elevated temperatures have been deteriorated, because of the strong bipolar diffusion effect caused by its small band gap. Subsequently, with the aid of the crystal structure engineering strategy, we purposely involve less metallic [Bi2] layers in the crystal structure, and successfully synthesize a new n-type Bi8Se9 and investigate, for the first time, its thermoelectric properties. Bi8Se9 exhibits a significantly widened band gap from 0.085 eV in BiSe to 0.146 eV that effectively reduces the bipolar thermal conductivity from the 0.37 W m–1 K–1 in BiSe to 0.14 W m–1 K–1. As a result, Bi8Se9 realizes a balance between the electrical resistance, the Seebeck coefficient, and a lower thermal conductivity, and achieves a ZT value of 0.40 at 673 K, which is twice that of BiSe at 673 K.

研究领域: 材料科学 · 物理学
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CERAMICS INTERNATIONAL · 2021 · IF 4.527

Optimising the thermoelectric properties of Bi2Sr2Co2Oy using Ag substitution and Nano-SiC doping

Xin Liu,Mengmeng Fan,Xuguang Zhu,Zengguo Tian,Xin-Jian Li,Hongzhang Song

Bi 2 Sr 2 Co 2 O y with excellent thermoelectric properties has received extensive attention from scientific researchers. In this study, Bi 2 Sr 2 Co 2 O y ceramic samples were prepared using the solid-phase sintering method. By Ag  +  substitution for Bi 3+ , the hole concentration and electrical conductivity were optimised. On this basis, nano-SiC particles were introduced to increase grain boundaries, improve phonon scattering, reduce the mean free path of phonons, and reduce the lattice thermal conductivity . A sample with a nominal composition of Bi 1.8 Ag 0.2 Sr 2 Co 2 O y + 0.025 wt% SiC had a maximum ZT value of 0.35 at 923 K, which was approximately 67 % higher than the ZT value of pure Bi 2 Sr 2 Co 2 O y . These results confirmed that under the combined action of Ag substitution and SiC doping, the thermoelectric performance of Bi 2 Sr 2 Co 2 O y was significantly improved.

研究领域: 材料科学 · 热电材料研究
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JOURNAL OF THE EUROPEAN CERAMIC SOCIETY · 2023 · IF 5.7

p-type Sn0.98Ag0.02Se with low thermal conductivity synthesized by hydrothermal method

Zi-Chen Wang,Xiao-Di Jiang,Yu-Xian Duan,Xu Wang,Zhen-Hua Ge,Jin-Ming Cai,Xiao-Ming Cai,Hong-Lin Tan

Tin selenide exhibits outstanding thermoelectric properties. Among its various forms, multicrystalline SnSe stands out as a more practical choice compared to single-crystal SnSe, owing to its straightforward chemical synthesis process, enhanced processability, and scalability. Herein, we synthesized p-type polycrystalline Sn 1−x Ag X Se bulk materials (x = 0, 0.01, 0.015, 0.02, 0.025, 0.03) using a simple hydrothermal and hot pressing method. Characterization methods such as XRD , Raman and XPS were used to demonstrate the successful doping of Ag + into the SnSe matrix. When the doping concentration reached Sn 0.98 Ag 0.02 Se (x = 0.02), Ag + reached the optimal concentration in the SnSe matrix, causing significant lattice distortion which increased phonon scattering and lowered the thermal conductivity , resulting in Sn 0.98 Ag 0.02 Se achieving ZT max = 1.14. However, when the doping concentration exceeded Sn 0.98 Ag 0.02 Se (x > 0.02), excess silver ions precipitated, partially acting as charge carriers, leading to a significant increase in electrical conductivity , resulting in Sn 0.97 Ag 0.03 Se having an electrical conductivity of 6860 s/m at 773 K. Compared to the pure phase, the electrical conductivity of Sn 0.97 Ag 0.03 Se increased by 259 %, and the ZT value of Sn 0.98 Ag 0.02 Se increased by 178%. This work demonstrates that Ag + is an effective p-type dopant in the SnSe system and indicates that high ZT values in SnSe can be achieved through a simple, low-cost, and environmentally friendly method.

CAS / MDL: 7782-49-2
研究领域: 材料科学 · 能源材料 · 物理化学
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CRYSTENGCOMM · 2022 ·Vol. 24 ·期 26 ·4772-4786 · IF 3.756

The effect of annealing in carbon powders on the anisotropy of the thermoelectric properties of SrTiO3−δ single crystals on the (001) crystal plane

Zhixin Ma,Yang Qi,Xiaoguo Bi,Xu-dong Liu,Xiaodong Li,Ji-guang Li,Xudong Sun

SrTiO3 has high thermoelectric properties and excellent high-temperature stability, which makes it a promising thermoelectric material for use in harsh environments. Hence, it has potential applications in power generation and sensors through direct conversion between heat and electricity. In this study, we investigated the crystal orientations on the crystal growth plane to seek the crystal orientation that is suitable for higher thermoelectric (TE) properties. The [510], [12 5 0] and [320] directions were selected which are on the (001) crystal plane and quarterly divide the angle between the [100] and [110] directions. Two common directions [100] and [110] were selected for comparison purposes. The SrTiO3 single crystals are annealed in carbon powders at 1573 K and 1673 K to form SrTiO3−δ. With the increase in annealing temperature, the electrical conductivity of SrTiO3−δ in the [510], [12 5 0] and [320] directions decreases, which is attributed to the decreasing carrier concentrations. This agrees well with the results calculated using the first-principles calculation. After annealing at 1573 K, the SrTiO3−δ single crystal exhibits the highest ZT value of 0.19 at 873 K in the [510] direction. However, the two common directions, [100] and [110], are not suitable for high thermoelectric properties. In particular, the SrTiO3−δ single crystal in the [12 5 0] direction can always exhibit higher PF and ZT values, regardless of the variation of the annealing temperature in carbon powders. The results of this study are imperative for the design and development of perovskite TE materials.

研究领域: 材料科学 · 热电材料
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RARE METALS · 2021 ·Vol. 41 ·期 3 ·931-941 · IF 4.003

Synergistically enhanced thermoelectric properties of Bi2S3 bulk materials via Cu interstitial doping and BiCl3 alloying

Guo Jun,Wang Zi-Yuan,Zhu Yu-Ke,Chen Lin,Feng Jing,Ge Zhen-Hua

Bi 2 S 3 is composed of inexpensive and environmental friendliness elements, which has received extensive interests and been investigated as a promising mid-temperature thermoelectric material for years. Even pure Bi 2 S 3 possesses a high Seebeck coefficient and low thermal conductivity, its low electrical conductivity leads to a low figure of merit (ZT) value. In this work, Bi 2 S 3 fabricated by solid-state melting combined with spark plasma sintering can significantly enhance the thermoelectric performance via introducing small amounts of Cu and BiCl 3 . Cu interstitial doping and Cl substitution on S site result in a large increase in electrical conductivity. Additionally, the enhanced phonon scattering is derived from the point defects caused by element doping, the grain boundaries, and the small amount of secondary phase, which leads to the low thermal conductivity. Finally, a high ZT value of 0.7 is obtained at 773 K and reaches a large average ZT of 0.36 in the temperature range from room temperature (RT) to 773 K for the Cu-interstitial-doped and BiCl 3 -alloyed (Cu 0.01 Bi 2 S 3  + 0.175 mol% BiCl 3 ) sample. Furthermore, the mechanical properties of the Cu 0.01 Bi 2 S 3  + 0.175 mol% BiCl 3 sample are lower than those of other Bi 2 S 3 samples, which stem from the weak chemical bonding strength. Graphic abstract

研究领域: 材料科学 · 能源材料 · 热电材料
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JOURNAL OF ELECTRONIC MATERIALS · 2022 ·Vol. 51 ·期 2 ·522-531 · IF 2.047

Improved Thermoelectric Performance for β-Zn4Sb3 by Na/Zn Co-doping

Zheng Jie,Chen Jiali,Tang Yu,Shen Kaiyuan,Xiang Yujie,Shen Lanxian,Ge Wen,Yang Peizhi,Deng Shukang

In this study, β -Zn 4 Sb 3 was prepared using the Zn-NaCl mixed-flux method based on the stoichiometric ratio of Zn/Sb/NaCl = (4− x ):3:(7+ x ) ( x = 0, 0.1, 0.2, 0.3). X-ray diffraction results showed that all samples were hexagonal rhombic crystal structures with the space group \(R\overline{3}c\) . A second phase of ZnSb was detected in the samples with x = 0.2 and x = 0.3. In addition, the crystal-cell volume and lattice parameter of all samples increased for the larger ion radius of Na + than Zn 2+ . The transmission electron microscopy image and corresponding area electron diffraction pattern demonstrated that the prepared samples had a complete crystal structure. All samples had hole conduction and exhibited p-type conduction behavior. The carrier concentration of the material increased with increased Na content and decreased Zn, ranging from 8.89 × 10 19 cm −3 to 17.82 × 10 19 cm −3 . Moreover, the thermal conductivity ( κ ) of x = 0–0.2 samples decreased with increased Na content; however, the sample with x = 0.3 had a higher κ owing to the appearance of a ZnSb phase. Thermogravimetric differential thermal analysis showed that no weight loss occurred below the melting point. Eventually, the sample with the nominal composition of β- Zn 3.8 Sb 3 NaCl 7.2 achieved a ZT value of 1.43 at 690 K.

研究领域: 材料科学 · 物理学
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Materials Horizons · 2022 ·Vol. 10 ·期 2 ·454-465 · IF 15.717

Emerging homogeneous superlattices in CaTiO3 bulk thermoelectric materials

Jianbo Li,Yanxia Wang,Xue Jiang,Zhen Tian,Huijun Kang,Zongning Chen,Enyu Guo,Zhiqiang Cao,Tongmin Wang

The thermal conductivity of superlattices is strongly reduced as compared to that of the parent materials due to phonon-scattering and thermal boundary resistances at the superlattice period interfaces. Herein, homogenous superlattices consisting of homogenous structural CeδCa1−δTiO3 and CaTi1−δCeδO3 alternate layers were obtained through a variable-valence Ce doping, providing multi-quantum well interfaces between the alternate layers due to Ce-substitution at Ca and Ti sites, respectively. This material comprising these homogenous superlattices displayed a significantly reduced lattice thermal conductivity of 1.82 W m−1 K−1 and a record high zT value of 0.405 at 1031 K in CaTiO3-based thermoelectric materials. This strategy of synthesizing homogeneous superlattices provides a cost advantage over heterogeneous superlattices prepared by the molecular beam epitaxy method and paves a route for preparing bulk superlattices with unique thermoelectric properties rooting in the quantum domain limiting effect.

研究领域: 材料科学 · 热电学
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APPLIED PHYSICS LETTERS · 2022 ·Vol. 120 ·期 19 · IF 3.971

Enhancing the thermoelectric performance of Ag2Se by non-stoichiometric defects

Wang Ping,Chen Jun-Liang,Zhou Qi,Liao Yun Tiao,Peng Ying,Liang Ji Sheng,Miao Lei

Ag 2 Se is an attractive candidate for room temperature thermoelectric applications because of its extremely low thermal conductivity, large power factor, and excellent mechanical properties. However, its performance is difficult to be improved effectively by doping other atoms. The traditional synthesis processes have the disadvantages of low yield, complex steps, and long period. In this study, the Ag 2 Se 1+ x samples were rapidly synthesized by the melting method via changing the ratio of Ag and Se. The carrier concentration and mobility of Ag 2 Se are optimized by adding excess Se, which could regulate non-stoichiometric defects in the process of synthesis. A high Seebeck coefficient of ∼136.0  μ V K −1 , a large power factor of ∼3000.0  μ W m −1  K −2 , and the maximum figure of merit ( ZT ) of ∼1.02 of the Ag 2 Se 1.015 sample have been achieved at 375 K. The ZT value is 2.3 times than that of the pristine sample (Ag 2 Se). The mechanical properties of the molting sample are comparable to state-of-the-art thermoelectric materials. Finally, the highest ZT value of the material is predicted by factor B . This work provides an idea for further optimizing Ag 2 Se-based and other non-stoichiometric thermoelectric semiconductors by a slight excess of Se. Moreover, the fast synthesis technology can significantly save time and energy, which manifests great advantages to the wholesale manufacturing industry.

研究领域: 材料科学 · 能源工程
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CERAMICS INTERNATIONAL · 2019 · IF 3.45

Enhancing the thermoelectric properties of Bi2Ba2Co2Oy by dispersing SiC nanoparticles based on Na element doping

Chuangchuang Ruan,Mengmeng Fan,Yuewen Zhang,Hongzhang Song,Xin-Jian Li,Haoshan Hao

In this work, Bi 2 Ba 2 Co 2 O y  +  v wt% SiC ( v  = 0.00, 0.025, 0.05, 0.1, 0.2) and Bi 1.975 Na 0.025 Ba 2 Co 2 O y  +  w wt% SiC ( w  = 0.00, 0.025, 0.05, 0.1, 0.2) ceramic samples were synthesised. The increase in the carrier concentration caused by a small amount of Na element doping leads to a decrease in the resistivity and Seebeck coefficients. The lattice distortion caused by Na element doping decrease the sample thermal conductivity . After adding SiC nanoparticles , the resistivity can be reduced further. Especially more phonons are scattered by more grain boundaries, which leads to reduced thermal conductivity. The Seebeck coefficients increase slightly due to the low energy carrier scattering effect. Considering the influence of these two factors, dispersing SiC particles on the basis of Na element doping can effectively improve the thermoelectric performance of Bi 2 Ba 2 Co 2 O y -based samples. The ZT value of the Bi 1.975 Na 0.025 Ba 2 Co 2 O y + 0.1 wt% SiC sample reaches a maximum value of 0.21 at 923 K, 26.6% higher than the Bi 1.975 Na 0.025 Ba 2 Co 2 O y sample and 93% higher than the pure Bi 2 Ba 2 Co 2 O y sample.

研究领域: 材料科学 · 物理学
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