产品规格与参数：
| 货号 |
产品名称 |
规格 |
包装 |
| I493343-4N-5g |
三氧化二铟 |
99.99% metals basis;粉末 |
5g |
| I493343-4N-10g |
三氧化二铟 |
99.99% metals basis;粉末 |
10g |
| I493343-4N-25g |
三氧化二铟 |
99.99% metals basis;粉末 |
25g |
| I493343-4N-50g |
三氧化二铟 |
99.99% metals basis;粉末 |
50g |
| I493343-4N-100g |
三氧化二铟 |
99.99% metals basis;粉末 |
100g |
| I493343-4N1-10g |
三氧化二铟 |
99.99% metals basis;粉末;<100 nm(TEM) |
10g |
| I493343-4N1-50g |
三氧化二铟 |
99.99% metals basis;粉末;<100 nm(TEM) |
50g |
| I493343-4N1-100g |
三氧化二铟 |
99.99% metals basis;粉末;<100 nm(TEM) |
100g |
| I493343-4N1-250g |
三氧化二铟 |
99.99% metals basis;粉末;<100 nm(TEM) |
250g |
| I493343-4N2-10g |
三氧化二铟 |
99.99% metals basis;粉末;<50 nm(TEM) |
10g |
| I493343-4N2-50g |
三氧化二铟 |
99.99% metals basis;粉末;<50 nm(TEM) |
50g |
| I493343-4N2-250g |
三氧化二铟 |
99.99% metals basis;粉末;<50 nm(TEM) |
250g |
| I493343-6N-5g |
三氧化二铟 |
99.9999% metals basis;粉末;≥100目 |
5g |
| I493343-6N-25g |
三氧化二铟 |
99.9999% metals basis;粉末;≥100目 |
25g |
| I493343-6N-100g |
三氧化二铟 |
99.9999% metals basis;粉末;≥100目 |
100g |
|
Indium(III)oxide is a versatile compound with significant applications in electronics,optics, and materials science. It is widely employed in the synthesis of transparentconducting oxides (TCOs), particularly for flat-panel displays, and solarcells, due to its electrical conductivity and optical transparency. Insemiconductor technology, it is used for making indium tin oxide (ITO),enhancing the performance of electronic devices, and is sensitive to variousgases, making it suitable for gas sensing applications, particularly indetecting hazardous gases.
Application：
1.Amine Functionalized Surface Frustrated Lewis Pairs for CO2 Photocatalysis: Discusses the enhancement of photocatalytic performance for CO2 reduction using indium oxide hydroxide with amine-functionalized surface frustrated Lewis pairs.2.Enhancing Gas Sensing Performance through UV Photoexcitation: Explores the improvement of room-temperature gas sensing capabilities of metal oxide semiconductor chemiresistors, including indium(III) oxide, by 400 nm UV photoexcitation.3.Indium(III) Complexes in Industry and Nanoparticle Synthesis: Reviews the use of trivalent indium complexes as catalysts and precursors for various industrial applications and the synthesis of nanoparticles like indium oxide.4.Ag/In2O3 Inverse Opal Synthesis: Details the synthesis and perspectives of silver/indium oxide inverse opal structures, highlighting their potential in semiconductor applications due to their optical properties .5.Photocatalytic Generation of Hydroxyl Radicals and Manganese Species: Investigates the use of indium oxide in enhancing the photocatalytic performance of permanganate for efficient micropollutant removal under visible light
Product specifications and parameters:
| SKU |
Product name |
Specification |
Pack Size |
| I493343-4N-5g |
Indium oxide |
99.99% metals basis;powder |
5g |
| I493343-4N-10g |
Indium oxide |
99.99% metals basis;powder |
10g |
| I493343-4N-25g |
Indium oxide |
99.99% metals basis;powder |
25g |
| I493343-4N-50g |
Indium oxide |
99.99% metals basis;powder |
50g |
| I493343-4N-100g |
Indium oxide |
99.99% metals basis;powder |
100g |
| I493343-4N1-10g |
Indium oxide |
99.99% metals basis; Powder＜100 nm(TEM) |
10g |
| I493343-4N1-50g |
Indium oxide |
99.99% metals basis; Powder＜100 nm(TEM) |
50g |
| I493343-4N1-100g |
Indium oxide |
99.99% metals basis; Powder＜100 nm(TEM) |
100g |
| I493343-4N1-250g |
Indium oxide |
99.99% metals basis; Powder＜100 nm(TEM) |
250g |
| I493343-4N2-10g |
Indium oxide |
99.99% metals basis; Powder＜50 nm(TEM) |
10g |
| I493343-4N2-50g |
Indium oxide |
99.99% metals basis; Powder＜50 nm(TEM) |
50g |
| I493343-4N2-250g |
Indium oxide |
99.99% metals basis; Powder＜50 nm(TEM) |
250g |
| I493343-6N-5g |
Indium oxide |
99.9999% metals basis; Powder;≥100 meshes |
5g |
| I493343-6N-25g |
Indium oxide |
99.9999% metals basis; Powder;≥100 meshes |
25g |
| I493343-6N-100g |
Indium oxide |
99.9999% metals basis; Powder;≥100 meshes |
100g |
|
D2621364
危险品化学品经营许可证（带存储）