In situ growth of one-dimensional nanowires on porous PDC-SiC/Si3N4 ceramics with excellent microwave absorption properties

Enhanced microwave absorption properties of porous PDC-SiC/Si 3 N 4 ceramics were successfully prepared through in situ growth of Si 3 N 4 nanowires (NWs) by the unidirectional freeze casting of Si 3 N 4 /camphene slurries with various polycarbosilane (PCS) contents at 1400   °C in N 2 . Si 3 N 4 NWs were in situ formed in the pore channels via a vapor-solid (VS) mechanism, the content of Si 3 N 4 NWs increased with increasing of PCS content, which tailored the microstructure and mechanical property of porous PDC-SiC/Si 3 N 4 ceramics. With the increase of PCS content, the minimum reflection coefficient (RC) of porous PDC-SiC/Si 3 N 4 ceramic decreased from −20.2   dB to −56.2   dB, and the effective absorption bandwidth (EAB) increased from 5.3 to 7   GHz, demonstrating that the porous PDC-SiC/Si 3 N 4 ceramics decorated with Si 3 N 4 NWs had a superior microwave-absorbing ability, which could be ascribed to the electronic dipole polarization and interfacial scattering enhanced by the various interfaces among Si 3 N 4 , in-situ formed PDC-SiC nanograins, nanosized carbon and Si 3 N 4 NWs phases. These findings provide significance guidance in the development of new broadband EM absorbing materials.