摘要
Europium-doped Lutetium oxide (Lu 2 O 3 : Eu 3 + ) polycrystalline films have been successfully fabricated on cleaned silicon (100) substrates by routine and alternate spin-coating techniques. X-ray diffraction (XRD), photoluminescence (PL) spectra, field emission electron scanning microscope (FE-SEM) are employed to characterize the as-fabricated films. The SEM observation reveals that the thickness and porosity of the film fabricated by the alternate spin-coating are superior to that by routine spin-coating, i.e. the thickness and porosity increase 95% and reduce 26%, respectively, resulting in 72% enhancement of the emission intensity. According to theoretical calculation and crystallographic analysis, the dominated 5 D 0 - 7 F 2 emission of Eu 3 + can be assigned to the main non-inversion site occupancy.
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