摘要
Sb 2 Se 3 is a promising absorber material for photovoltaic applications owing to its suitable bandgap and high absorption coefficient. However, the initial deposition of the precursor Sb 2 Se 3 thin films using thermal evaporation with an annealing process , results in poor crystallinity and inadequate Se content, leading to significantly low device efficiency and some deep-level detrimental defects. To address these issues, herein, we propose a facile thermal diffusion post-selenization method to supplement Se into post-deposited Sb 2 Se 3 thin films . This process not only achieves stoichiometric composition but also improves the crystallinity of the samples, thereby reducing defect density and carrier recombination. As a result, the efficiency of the fabricated Mo/Sb 2 Se 3 /CdS/ITO/Ag solar cell is significantly enhanced from 0.66% to 3.29%.
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