摘要
The unique combination of strong excitonic properties and environmental stability in 0D copper halide crystals motivates the development of scalable ambient fabrication routes for high-quality emitters. Here, we report a low-temperature solvent vapor-assisted crystallization strategy to grow millimeter-sized Cs 3 Cu 2 I 5 crystals. Rb + doping effectively passivates surface defects, markedly enhancing moisture and ambient stability, with the photoluminescence intensity remaining nearly unchanged after 60 days in air. Notably, the 10% Rb + -doped crystals achieve a high photoluminescence quantum yield (PLQY) of 98.42%, demonstrating a pronounced emission enhancement. Ab initio molecular dynamics (AIMD) simulations reveal that both pristine and 10% Rb + -doped structures reside in a similar energy window (−108 to −110 eV), while the doped system exhibits a more confined trajectory, suggesting a flattened energy landscape and suppressed defect formation. Doped lattice relaxations induce slight, direction-dependent bond contraction, improving coordination integrity without major distortion, consistent with material stability and device reliability. By integrating blue-emitting Cs 3 Cu 2 I 5 :10% Rb + with green Cs 3 Cu 2 Cl 5 and red CaAlSiN 3 :Eu 2+ , we fabricate high-performance white light-emitting diodes (WLEDs) achieving CRI of 95.36, CIE chromaticity coordinates of (0.30, 0.34), and outstanding luminance of 17734.5 cd/m 2 . These findings establish a versatile ambient pathway for defect-engineered Cs 3 Cu 2 X 5 (X = I, Cl) emitters, advancing their prospects for next-generation solid-state lighting technologies.
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