Excellent Comprehensive Electromechanical Properties in PZT-Based Hard High-Temperature Piezoceramics

en High-power piezoelectric ceramics which have a wide operating temperature range are essential for sensor and actuator applications in extreme conditions. However, their development is fundamentally hindered by the inherent trade-off among key parameters ( T C , d 33 , Q m ). To transcend these limitations, we proposed a hierarchical design strategy in 0.97Pb(Zr x Ti 1- x )O 3 -0.03Bi(Mn 1/2 Ti 1/2 )O 3 ceramics: Bi 3+ and Mn 2+/3+ as lattice constituents occupy A and B-sites to stabilize the morphotropic phase boundary at x = 0.51, reducing polarization rotation barriers ( d 33 = 405 pC N −1 ) and sintering temperature (1080°C). Additionally, the subsequent introduction of 0.2 wt% MnCO 3 as an extrinsic dopant facilitates dual-site occupation, resulting in gradient-distributed oxygen vacancies that form ordered defect dipoles. The local random field disrupts ferroelectric long-range ordering, fostering a complex domain architecture that features both sub-micron and nanodomains. This stabilizes a dynamic equilibrium between irreversible domain-wall pinning and reversible polarization switching. Thus, the optimized material exhibits outstanding comprehensive electrical properties: d 33 = 418 pC N −1 , Q m = 550, T C = 351°C, k P = 0.59, tan δ = 0.0027. This work presents a novel material design paradigm for high-temperature high-performance piezoelectric materials. 摘要 zh 具有宽工作温度范围的高功率压电陶瓷对于极端条件下的传感器和执行器应用至关重要。然而,其发展从根本上受到关键参数( T C 、 d 33 、 Q m )之间内在平衡的阻碍。为了突破这些限制,我们提出了一种多级化设计策略:在0.97Pb(Zr x Ti 1- x )O 3 - 0.03Bi(Mn 1/2 Ti 1/2 )O 3 陶瓷中,通过Bi 3+ 和Mn 2+/3+ 作为晶格组分占据A和B位点,以此来稳定 x = 0.51处的准同型相界,并降低极化翻转能垒( d 33 = 405 pC N −1 )和烧结温度(1080°C)。此外,随后引入0.2 wt% MnCO 3 作为外源掺杂剂,促进双位点占据,形成梯度分布的氧空位,从而产生有序的缺陷偶极子。局部随机场能够破坏铁电长程有序性,形成同时包含亚微米和纳米畴的复杂畴结构。这能够稳定不可逆畴壁钉扎与可逆极化切换之间的动态平衡。因此,优化后的材料展现出卓越的综合电学性能: d 33 = 418 pC N −1 , Q m = 550, T C = 351°C, k P = 0.59, tan δ = 0.0027。本研究提出了一种高温高性能压电材料的新型材料设计范式。