摘要
Monolayer molybdenum disulfide (MoS2) is a highly prominent material in optoelectronic devices, yet its intrinsic band structure limits its performance in the near-infrared regime. Here, we demonstrate a high-performance broadband photodetector based on monolayer MoS2 hybridized with eco-friendly CuInS2 quantum dots (CIS-QDs). The Type-II band alignment at the heterojunction interface enables efficient spatial separation of photogenerated carriers, while the CIS-QDs simultaneously passivate surface defects and induce n-type doping in the MoS2 channel. Consequently, the device exhibits a dramatically extended photoresponse spanning ultraviolet (395 nm) to NIR (980 nm), with the photocurrent enhanced by more than 2 orders of magnitude at 980 nm relative to pristine MoS2. The hybrid photodetector achieves a specific detectivity (D*) exceeding 1013 Jones at 395 and 625 nm, and a responsivity improvement of over 1 order of magnitude at 780 nm. These results validate the MoS2/CIS-QD heterostructure as a promising eco-friendly platform for high-performance broadband optoelectronic applications.
危险品化学品经营许可证(带存储)