Journal of Materials Chemistry C
·
2024
·Vol. 13
·期 6
·2895-2904
·
IF 5.7
Fangyi Zhao,Yuhe Shao,Qinan Mao,Yiwen Zhu,Heyi Yang,Yang Ding,Quanlin Liu,Jiasong Zhong
Near-infrared (NIR) persistent luminescence (PersL) materials show promising prospects in achieving multifunctional applications. However, the lack of excellent NIR PersL materials with high PersL brightness and ultralong PersL duration hinders their practical applications. Herein, we report a Cr3+-doped broadband NIR phosphor Mg8.9Ga14.2Ge4.9O40:Cr3+ (MGGO:Cr3+) with tunable photoluminescence and excellent PersL performance. The NIR emission wavelength of MGGO:Cr3+ can be tuned from 692 to 865 nm due to the multi-site occupation of Cr3+ ion. The designed MGGO:0.05Cr3+ phosphor exhibits intense NIR PersL in the wavelength range of 600–1100 nm with a PersL duration longer than 55 h. The ultralong PersL characteristic mainly originates from the slow release of electrons from deep traps. Through detailed analysis of trap energy levels and electron charging/de-trapping process, a possible PersL mechanism of MGGO:Cr3+ is proposed. Finally, we demonstrate the potential applications of MGGO:Cr3+ in broadband NIR phosphor-converted light-emitting diode devices, tissue penetration, labelling and tracing, multi-level anti-counterfeiting and encryption fields.
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高影响因子
Journal of Materials Chemistry C
·
2024
·Vol. 12
·期 7
·2379-2390
·
IF 5.7
Yingying Ma,Ting Wen,Ke Liu,Chen Li,Dequan Jiang,En Chen,Tianyao Pei,Chuanlong Lin,Yonggang Wang
Cr3+ ions as a common activator in inorganic phosphors is well-known and exhibit two distinct emissions, i.e. the broadband (4T2 → 4A2) and the narrow-line (2E → 4A2) emission, both of which have wide applications in red/NIR lasers and pc-LEDs. Controllable switching between these two emission states has great potential in applications such as switches, sensors, and regulators. However, most current studies using chemical modulation of host lattices remain at the level of static regulation. In this work, we report the realization of a pressure-driven dynamic and reversible broadband-to-line emission switching in Cr3+-activated pyroxenes LiScSi2O6 and LiScGe2O6. Under compression, LiScSi2O6 undergoes sequential phase transitions C2/c → P21/c → HP-C2/c at 0.8 GPa and 21.3 GPa, while LiScGe2O6 has a partially irreversible phase transition P21/c → HP-C2/c at around 16.2 GPa. Remarkably, a pressure-induced energy level-crossing between 4T2 and 2E is observed in both materials, resulting in dramatic switching of the broadband emission from the spin-allowed 4T2 → 4A2 transition to the sharp-line emission from the spin-forbidden 2E → 4A2 transition. The calculated crystal field strength (Dq/B) of LiScSi2O6 and LiScGe2O6 increases greatly from 2.10 and 2.26 under ambient conditions to 3.89 and 4.07 at around 30 GPa, respectively. Particularly, the narrow-line emission (2E → 4A2) becomes 44.5-fold more intense than the broadband emission (4T2 → 4A2) at 22.0 GPa in LiScSi2O6:0.04Cr3+, compared to the initial state, which can be attributed to both the enhancement of crystal field strength and local symmetry reduction. Finally, the relationship between local coordination structures and the optical property evolution is thoroughly studied using XRD, Raman spectroscopy, PL spectroscopy, excitation spectroscopy and Eu-probes. These results demonstrate static pressure as a powerful tool to regulate the crystal field strength, and thus to achieve interesting optical phenomena including broadband-to-line emission switching and intense, laser-like deep-red emissions.
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JOURNAL OF RARE EARTHS
·
2026
·
IF 9.6
Youwang Long,Lei Zhong,Yuefei Xiang,Yunhai Zhu,Zaidong Chen,Yuanqing Kang,Lei Zhou,Mingmei Wu
Developing efficient near-infrared (NIR) luminescence materials is crucial for next-generation NIR phosphor-converted light-emitting diodes (pc-LEDs). Cr 3+ -activated materials exhibit broadband NIR emission, however, they suffer from low efficiency and severe thermal quenching at wavelengths beyond 900 nm. To overcome these drawbacknd Membrane Technology, School of Chemical Engineering and Technology, Sun Yat-sen Uns, an efficient energy transfer pathway from Cr 3+ to Ln 3+ (Yb 3+ , Tm 3+ ) in Cs 2 NaLuCl 6 (CNLC) double perovskite single crystals was established. The Cr 3+ singly doped crystal shows broadband NIR emission peaking at 970 nm with an internal quantum efficiency (IQE) of 73.1%. Through effective Cr 3+ sensitization, the NIR-II emissions at 996 nm (Yb 3+ ) and 1222 nm (Tm 3+ ) are enhanced, along with the significantly improved luminescent thermal stability. Moreover, the co-doped system also exhibits superior IQE of 86.6% for CNLC:3 mol%Cr 3+ ,9 mol%Yb 3+ and 71.6% for CNLC:3 mol%Cr 3+ ,5 mol%Tm 3+ . The developed crystals integrated into a 540 nm-driven NIR LED delivers a NIR radiation power of 80.4 mW at a driving current of 600 mA, enabling high-resolution bioimaging and night vision applications. This work provides insight into energy transfer engineering to boost the luminescent efficiency and thermal stability in NIR-emitting materials.
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高影响因子
CHEMICAL PHYSICS
·
2026
·
IF 2.4
Renping Cao,Chunxi Lin,Jiaxin Lin,Ruirui Yang,Fangrui Cheng,Jingheng Nie,Xiaochun Li,Zhulei Lei
Cr 3+ doped luminescence materials have been investigated widely and their luminescence property improvements are becoming a research hotspot by the researchers. In this work, we study the broadband near-infrared emission improvement and synthesis of Cr 3+ doped perovskite (Li 1.6 Mg 1.6 Sn 2.8 O 8 :Cr 3+ ) via co-doped Bi 3+ ions. The crystal structure, morphology, and luminescence properties of samples are investigated, respectively. Photoluminescence (PL) spectra of Li 1.6 Mg 1.6 Sn 2.8 O 8 :R (R = Cr 3+ , Cr 3+ /Bi 3+ ) in the range of 650 - 1250 nm are observed with a broad PL band and ∼186 nm full width at half maximum due to the 4 T 2 ( 4 F) → 4 A 2 transition of Cr 3+ ion in weak crystal field. The spectral intensity of Li 1.6 Mg 1.6 Sn 2.8 O 8 :Cr 3+ can be enhanced ∼2.4 times because of the change of crystal field when the co-doped Bi 3+ ions is ∼4 mol%. The good luminous thermal stability of Li 1.6 Mg 1.6 Sn 2.8 O 8 :Cr 3+ , Bi 3+ is confirmed by using PL spectra under the temperature from 300 to 450 K. The concentration/thermal quenching and luminescence mechanisms of Li 1.6 Mg 1.6 Sn 2.8 O 8 :R (R = Cr 3+ , Cr 3+ /Bi 3+ ) are analyzed and explained. This paper content can provide help for the improving emission of Cr 3+ doped luminescence materials.
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Advanced Optical Materials
·
2024
·Vol. 12
·期 16
·2303144
·
IF 8
Mengdi Xu,Zhongyuan Li,Qiqi Li,Tinglin Mou,Xuesong Wang,Dong Yan,Ye Li,Xianju Zhou,Zhen Fang,Lixin Ning
Broadband near-infrared (NIR) emissions in the long wavelength region with simultaneous high efficiency and thermal stability are desirable for NIR phosphor-converted light-emitting diodes (NIR pc-LEDs) light sources. Herein, a novel broadband NIR-emitting phosphor is reported, Ba 5 La 3 MgAl 3 O 15 :Cr 3+ (BLMAO:Cr 3+ ), which exhibits a NIR emission band spanning 700–1300 nm with maximum peak wavelength ( λ max ) at 925 nm and full width at half maximum of 160 nm. The optimized phosphor achieves an internal quantum efficiency of 66%, and the integrated emission intensity at 423 K remains 61% of that at room temperature, which surpasses most Cr 3+ -activated phosphors emitting in the long-wavelength NIR region ( λ max > 900 nm). The NIR luminescence properties are elucidated on the basis of density functional calculations of the multiple Cr 3+ local structures as generated by the Ba/La occupation disorder in the host material. The applications of the NIR phosphor in pc-LED devices are demonstrated, showing potential in night-vision and nondestructive examination. The results indicate that BLMAO:Cr 3+ is a promising phosphor with highly efficient and thermally stable broadband NIR emission for NIR LED light sources.
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高影响因子
JOURNAL OF LUMINESCENCE
·
2023
·
IF 3.6
Long Chen,Jiyou Zhong,Liwei Zeng,Weiren Zhao
Near-infrared phosphor-converted light-emitting diode (NIR pc-LED) is becoming a smart light source for portable multifunctional devices, utilizing in fields like bio-imaging, night-vision, and food-quality analysis. However, developing broadband, inexpensive, and efficient NIR phosphors are still in great challenges. Herein, we report a phosphate LiAlP 2 O 7 :Cr 3+ phosphor by choosing highly distorted and inexpensive octahedral Al 3+ -containing compound as host. This material generates a broadband NIR emission with peak located at 844 nm and a full width at half maximum (FWHM) of 163 nm under 450 nm excitation. Amazingly, the absorption efficiency (AE) was measured to be as high as 64%, being higher than most of Cr 3+ -activated polycrystalline materials . Unfortunately, the internal quantum efficiency (IQE) was only 26.7%, and the emission intensity at 373 K kept only 56% of that at room temperature . The detailed reasons for these undesired properties are systematically investigated. Moreover, a prototype NIR pc-LED fabricated by using this material combining with 450 nm LED chip demonstrates a NIR output power of 9.7 mW and NIR photoelectronic conversion efficiency of 3.3% under 100 mA driving current, indicating the feasibility of this material to be applied in NIR pc-LEDs.
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SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY
·
2026
·
IF 4.8
Yu Zhang,Kai Li,Hala Muji,Qixu Tian,Yuansong Gao,Nari Mai,Xinyu Gu,Fengqi Zhao,Kefu Chao
s Cr 3+ activated broadband Near-Infrared (NIR) fluorescent phosphors with octahedral coordination preference and their potential applications in biomedicine, plant growth, etc. However, the development of Cr 3+ -doped broadband NIR fluorescent phosphors with tetrahedral coordination remains a challenge. This study, for the first time, employs first-principles calculations to investigate the doping sites of Cr 3+ in a tetrahedral coordination environment. It confirms the possibility of tetrahedral coordination for Cr 3+ and determines the doping sequence of Cr 3+ through the calculation of formation energies. The energy band structure of BaGa 2 O 4 :Cr 3+ has been calculated for the first time, and the orbital distribution of the Cr 3+ impurity energy level has been calculated by mBJ correction, which is in good agreement with the experimentally derived spectral leaps. The emission peak of BaGa 2 O 4 :Cr 3+ phosphor is located at 711 nm. XPS tests were conducted to determine the valence state of Cr ions in the lattice of BaGa 2 O 4 :Cr 3+ , confirming the presence of Cr 3+ ions responsible for NIR luminescence in BaGa 2 O 4 :Cr 3+ . Thermal stability tests were performed, showing that the thermal stability can reach 66.46% at 425 K under ambient conditions when single-doped with Cr 3+ , representing a significant improvement compared to other tetrahedrally coordinated Cr 3+ dopants. This provides possibilities for the application of Cr 3+ in tetrahedral coordination as near-infrared fluorescent phosphors for LEDs.
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PubMed
高影响因子
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
·
2026
·Vol. 109
·期 6
·e70938
·
IF 4.2
Qinghong Meng,Jiaming Yuan,Zhijun Xu,Xiangming Li,Wanjun Yu,Rong Feng,Xintao Zhang,Ji-Guang Li
To explore broadband near-infrared (NIR) emission phosphor based on the thermodynamic metastable Gd 3 Al 5 O 12 garnet, a new strategy of Ca 2+ -Sn 4+ pairs substituting for Gd 3+ -Al 3+ was utilized to stabilize the lattice, followed by using Ga 3+ doping to tune the crystal structure, Cr 3+ local coordination environment, and luminescence. Then the novel Gd 1.02 Ca 1.98 Al 3− y Ga y Sn 1.98 O 12 :0.02Cr 3+ (GCAGSO:Cr) phosphors were successfully devised and fabricated, and systematic research revealed that increased Ga 3+ incorporation induced an enhanced degree of the [(Sn,Ga,Cr)O 6 ] octahedron distortion, weakened the magnitude of the crystal field Cr 3+ experienced, and red-shifted/broadened the emission band. The optimal phosphor exhibits efficient broadband NIR emission and outstanding thermal stability ( I 423K = 84.3%, S = 3.52, Δ E a = 0.31 eV), with a maximum center at ∼782 nm, a full-width at half-maximum of ∼138 nm, and internal/external quantum efficiencies of ∼80.3%/24.2%. The constructed pc-NIR-LED adopting this optimal phosphor manifests desirable luminous performance (output power ∼19.05 mW, efficiency ∼8.24%), demonstrating promise for practical applications in non-invasive biological imaging, non-destructive inspection, and night vision.
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高影响因子
JOURNAL OF LUMINESCENCE
·
2025
·
IF 3.6
Siyu Guo,Chao Tang,Ligan Ma,Rongfei Wei,Xiangling Tian,Fangfang Hu,Hai Guo
The rapid advancement of near-infrared (NIR) spectroscopy has spurred a significant demand for innovative broadband NIR phosphors. Here, a [Zn 2+ -Si 4+ ] → [Ga 3+ -Ga 3+ ] co-substitution strategy is designed to modify the local symmetry and crystal field environment of Cr 3+ in Gd 2 GaSbO 7 . Consequently, the luminescence experiences notable enhancement, broadening, and red-shifting under an irradiation of 460 nm light. The Gd 2 Ga 0.91 Zn 0.02 Si 0.02 SbO 7 :5%Cr 3+ phosphor demonstrates a broadband emission centered at 797 nm with a full-width at half maximum of 126 nm. Moreover, the NIR emission intensity retains 50.96% of the ambient value at 423 K. Ultimately, the as-obtained phosphor was successfully encapsulated into a blue chip to manufacture a NIR phosphor-converted light-emitting diode (pc-LED) with an NIR output power of 47.83 mW and a photoelectric efficiency of 10.70%. These results underscore the potential of Gd 2 Ga 1-2 x Zn x Si x SbO 7 :Cr 3+ as a high-performance material for advanced NIR spectroscopy applications.
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JOURNAL OF NON-CRYSTALLINE SOLIDS
·
2017
·
IF 2.124
X.L. Yang,W.C. Wang,Q.Y. Zhang
The influence of BaF 2 on the physical and spectroscopic properties of Cr 3+ /Ho 3+ co-doped germanate glass is investigated systematically by differential scanning calorimeter , excitation and emission spectra , as well as dynamic decay lifetime. The intense and broad absorption band of Cr 3+ provides a selective pump scheme for obtaining an efficient 2.0 μm emission of Ho 3+ , the OH − absorption coefficient, on the other hand, is decreased as low as 1.08 cm −1 , which both highly conducive to obtain an intense 2.0 μm emission of Ho 3+ . In addition, the crystal-field parameter D q / B of Cr 3+ -doped glasses is also calculated to study the influence of BaF 2 on the local environment of activators and sensitizers. Further theoretic calculation shows that the largest absorption and emission cross-sections of Ho 3+ near 2.0 μm are as high as 4.6 and 5.2 (× 10 −21 cm 2 ) in the 10 mol% BaF 2 modified Cr 3+ /Ho 3+ co-doped glass and the maximum energy transfer efficiency from Cr 3+ to Ho 3+ is about 42.5%. All results suggest that this BaF 2 modified Cr 3+ /Ho 3+ co-doped glass is very suitable for a high-efficient 2.0 μm fiber lasers with flexible pump sources.
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高影响因子
CHEMISTRY OF MATERIALS
·
2021
·
IF 9.811
Fangyi Zhao,Hao Cai,Zhen Song,Quanlin Liu
Trivalent chromium ion-doped near-infrared (NIR) phosphors have been widely studied due to their tunable emission wavelengths and broad applications. High Cr3+ concentration can improve absorption efficiency but generally results in low emission intensity due to the concentration quenching effect. Herein, we report a series of efficient NIR phosphors with suppressed concentration quenching, Sr9M1–x(PO4)7:xCr3+ (M = Ga, Sc, In, and Lu), showing a broadband NIR emission ranging from 700 to 1100 nm peaking at 850 nm upon the 485 nm light excitation. The emission peak position is almost independent of the type of M ion and the Cr3+ dopant content, and the type of M ion has little influence on the luminescence thermal quenching, indicating that [MO6] octahedra are rigid enough to keep octahedral volumes and average M3+–O2– distances nearly constant owing to the formation of the framework structure on Cr3+ substitution. The NIR emission intensities monotonously increase with the Cr3+ content increasing from 0 to 80% with suppressed concentration quenching, the intensity of Sr9Cr(PO4)7 still maintains 84.23% of Sr9Ga0.2(PO4)7:0.8Cr3+ phosphor, and the thermal quenching behavior is slightly dependent on x; these effects can be attributed to the suppressed energy transfer due to the structural confinement effect. The optimal sample, Sr9Ga0.2(PO4)7:0.8Cr3+, has an internal/external quantum efficiency of 66.3%/29.9%. Finally, we fabricate a NIR phosphor-conversion light-emitting diode and demonstrate its applications in nondestructive examination and medical fields.
研究领域:
材料科学
·
光学材料
·
固态化学
·
光子学
·
发光学
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高影响因子
Advanced Optical Materials
·
2023
·Vol. 11
·期 7
·2202466
·
IF 9
Zhihao Zhou,Fanquan He,Enhai Song,Shuai Zhang,Xiaodong Yi,Hao Zhang,Yakun Le,Shi Ye,Shanhui Xu,Jianrong Qiu,Guoping Dong
Broadband near-infrared (NIR) phosphors have recently received considerable attention in spectroscopy technology fields, but designing inexpensive, emission peaks centered above 800 nm, and multimodal broadband NIR luminescence material still remains a great challenge. Here, by selecting stannate compound Mg 2 SnO 4 (MSO) as the host, a kind of broadband NIR phosphor MSO:Cr 3+ with multimode luminescence properties is reported. The designed material exhibits an emission peaking at 800 nm and a full-width at half maximum of 180 nm (≈2730 cm −1 ). The site occupation of Cr 3+ in MSO is unraveled by density functional theory calculation. The constructed NIR light-emitting device based on MSO:Cr 3+ displays a high NIR output power of 187.19 mW@100 mA and remarkable photoelectric efficiency of 13.67%, and its multifunctional applications in information encryption, non-destructive detection, and so on are also demonstrated. Additionally, through defect site reconstruction, MSO:Cr 3+ presents superior broadband NIR persistent luminescence (PersL) properties with PersL duration time longer than 50 h. This work provides a feasible strategy to develop intelligent optical material integrated with multimodal luminescence through low-cost stannate compounds as the host toward versatile applications such as non-destructive detection and bioimaging.
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高影响因子
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