APPLIED CATALYSIS B-ENVIRONMENTAL
·
2024
·
IF 20.2
Feng Long,Bo Zhang,Xincheng Cao,Xiaolei Zhang,Hanjie Ying,Junming Xu,Chenjie Zhu
Herein, we have achieved successful preparation of atomically dispersed catalytic systems, liquid metal Pt x /Ga catalysts, which eliminate the need for reduction processes. Notably, the 0.5 wt% Pt x /Ga catalyst exhibited exceptional stability in hydrogenation performance, achieving 100 % conversion of stearic acid with an impressive 98.7 % selectivity towards octadecane, especially with unprecedented stability over 19 recycling cycles. X-ray absorption spectra (XPS) and density functional theory (DFT) calculations unequivocally establish that isolated Pt atoms, benefitting from charge transfer from the Ga matrix, synergistically optimize Pt metal atom utilization, thereby efficaciously optimizing the d-band center and augmenting hydrogenation proficiency. Furthermore, isolated Pt configuration's weaker CO adsorption ability effectively mitigates concerns of catalyst poisoning and undesirable agglomeration, thereby engendering superior stability. The stronger adsorption with aldehyde and alcohol intermediates promotes the hydrogenation of stearic acid through hydrodehydration pathway, thereby ensuring a high carbon utilization economy. Overall, our work offers insight into the investigation of hydrogenation conversion of bio-derivatives over atomically dispersed catalytic systems.
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Journal of Materials Chemistry C
·
2024
·Vol. 12
·期 36
·14675-14684
·
IF 5.7
Shanhao Ze,Fei Li,Jiaming Guo,Cong Luo,Tongxiang Chen,Yan Tian,Fei Liu,Jing Li,Baodan Liu
Two-dimensional (2D) InZnO (IZO) is a typical and potential transparent conductive oxide for next-generation flexible transparent electronic displays due to its high flexibility, transparency, and high mobility characteristics. In this study, a liquid metal printing method is proposed to prepare atomically thin 2D IZO with controllable composition. Unlike the oxidation process where In dominates the surface oxidation in the liquid In–Sn alloy, the surface oxidation process of the liquid In–Zn alloy is dominated by Zn. Furthermore, the oxidation behavior displays clear characteristics of both competitive and synergistic oxidation. This unique feature allows precise control of the ZnO content in 2D In2O3, with Zn content in the film adjustable from 4 at% to 82 at%. Additionally, despite the incorporation of Zn, the film maintains a visible light transmittance of over 99%. As the Zn content in the 2D IZO film increases, the current on/off ratio of the transistor initially decreases and then increases, reaching a maximum of 104, while the field-effect mobility consistently improves. After covering the 2D IZO back channel with 2D Ga2O3, a significant enhancement of field-effect mobility is further achieved due to the interface modulation. The findings of this study provide new insights into the oxidation behavior of indium-based liquid alloys and present a novel route for synthesizing 2D IZO thin-film semiconductor materials with varied compositions. This research offers valuable guidance for the development of advanced materials in the field of transparent electronics.
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JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION
·
2024
·Vol. 39
·期 4
·814-818
·
IF 1.3
Wang Peng,Zhang Binbin,Liu Xiaofei,Zhang Xin,Tu Rong,Zhang Song,Li Baowen
It remains a big challenge to synthesize two-dimensional (2D) GaN material for applications in power nanodevices. Traditional synthetic methods require complex equipment and processes and time consuming. Here, we reported a two-step route to prepare polycrystalline 2D GaN film. The amorphous ultrathin Ga 2 O 3 film was first exfoliated from the surface of liquid gallium. In a vapor phase reaction, 2D Ga 2 O 3 film was then converted into 2D GaN film while maintaining the 2D morphology. Raman and high-resolution transmission electron microscope (HRTEM) analysis implies the successful synthesis of wurtzite-type GaN ultrathin film. This simple strategy proposed in this work will provide more opportunities for applications of GaN ultrathin film in many devices.
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ADVANCED FUNCTIONAL MATERIALS
·
2025
·Vol. 35
·期 28
·2501047
·
IF 19
Jiantao Du,Kun He,Junyang Chen,Yangkun He,Miao He,Xitong Xu,Zhe Qu,Lin Gu,Qinghua Zhang,Xidong Duan,Mingyuan Huang,Chengbao Jiang,Bo Li,Shengxue Yang
Van der Waals (vdW) magnets have opened up new avenues for exploring next-generation spintronic devices. The exchange bias (EB) effect plays an undisputed role in ensuring accurate data retrieval in spintronic devices. However, the unsustainably weak EB field ( H EB ) introduced by field cooling and the high-complexity of devices incompatible with silicon-based industry, limit the application of related vdW spintronic devices. Here, a compatible and simple method is reported for constructing Fe 3 GaTe 2 /oxidized Fe 3 GaTe 2 heterostructures and achieving a spontaneous EB effect with a low-complexity device configuration. The spontaneous EB effect exhibits undecayed, tunable, and giant H EB of 2550 Oe at 3 K, along with a relatively high blocking temperature of 220 K. Field cooling and cross-sectional microstructure studies suggest that the EB effect arises from antiferromagnetic exchange coupling between Fe 3 GaTe 2 and spin clusters frozen by α-Fe 2 O 3 at the disordered interface. This work provides a unique avenue for customizing, integrating, and producing related spintronic devices.
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ADVANCED MATERIALS
·
2025
·Vol. 37
·期 27
·2420505
·
IF 26.8
Xin Gao,Kaiming Wang,Kun Zhai,Junxin Yan,Dongdong Yue,Congpu Mu,Zhipeng Yu,Yingchun Cheng,Anmin Nie,Zhongyuan Liu
Emergent magnetism in 2D materials has attracted significant attention due to their intrinsic magnetic order, which persists down to the monolayer limit, and their potential applications in spintronic devices. In particular, domain structure modulation plays a crucial role in 2D magnet-based nano-spintronic devices. However, the fabrication and modulation of the desired domain structure, along with the establishment of reliable electrical write/read operations, remain significant challenges. Herein, a unique structure-shaping way to modulate domain structure is demonstrated via folding a continuous flat Fe 3 GaTe 2 nanosheet. Accompanied by magnetic domain structure transformation, the symmetric butterfly-shaped magnetoresistance (MR) curve changes to an antisymmetric field-dependent magnetoresistance. Notably, the MR exhibits either the same or opposite sign at geometrically equivalent positions, depending on the relative angle of the current flow and domain wall direction. The MR behavior with respect to sweeping field and electrodes position is due to the circulating current in the vicinity of the domain wall. More importantly, this new concept of manipulating domain structure and its associated magneto-transport behavior can inspire novel spintronic devices fabrication and application.
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高影响因子
ADVANCED MATERIALS
·
2025
·
IF 26.8
Hanchen Xu,Hongwei Shou,Ziwei Yan,Kefu Zhu,Chuanqiang Wu,Wei Jiang,Zhanfeng Liu,Shiqiang Wei,Jialin Shi,Hassan Akhtar,Changda Wang,Li Song
Two-dimensional transition metal carbides and nitrides (MXenes) have attracted significant attention due to their exceptional physicochemical properties. Despite extensive studies, efficient methods for the production of MXenes with precise structural control still remain a challenge, thus hindering their potential in many specific applications. Herein, a halogen ion-mediated hydrothermal approach is proposed for the controllable preparation of diverse MXenes and their heterostructures with well-defined interfacial architectures, demonstrating its potential as a high-throughput synthesis strategy. As proof of concept, Mo 2 C can be synthesized on a gram scale by employing NH₄F in the hydrothermal etching process of Mo 2 Ga 2 C. Subsequently, this approach is applied to various MXenes, including Ti 3 C 2 , V 2 C, and Nb 4 C 3 . Moreover, NH 4 X (X = Cl, Br, I) etchants combined with small-molecule intercalants enabled the targeted synthesis of MXene-based heterostructures, such as Mo 2 CT x @MoS 2 featuring ≈15 nm amorphous MoS 2 surface layers. Notable, the Mo 2 CT x (Br) heterostructure exhibited outstanding electrochemical stability, delivering a capacity of 465.5 mAh g⁻¹ after 300 cycles at 1 A g⁻¹, and achieving high coulombic efficiency of 99.8% during lithium-ion battery cycling. This work establishes a versatile and scalable platform for the synthesis of MXene-based materials, thus paving the way for accelerating their potential in various fields.
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ADVANCED MATERIALS
·
2025
·
IF 26.8
Hanzhang Zhao,Chao Yang,Yadong Liu,Qiaoqiao Wang,Yongyi Wu,Qiuxuan Mu,Feiyan Hou,Tai Min,Tao Li
Multiferroic heterostructures offer a promising platform for next-generation low-power spintronic devices by enabling electric-field control of magnetism. While recent advances in two-dimensional (2D) van der Waals (vdW) magnetic and ferroelectric materials have sparked significant interest, achieving reliable and nonvolatile electrical modulation of magnetism at room temperature within vdW multiferroic heterostructures remains a substantial challenge. Here, this study demonstrates robust, reproducible, and nonvolatile electrical control of ferromagnetism in Fe 3 GaTe 2 /CuInP 2 S 6 multiferroic heterostructures under ambient conditions. The modulation is evidenced macroscopically by reshaped magnetic hysteresis loops in anomalous Hall voltage measurements and microscopically by in situ magnetic and electric field-induced domain evolution captured via magnetic force microscopy. The first-principles calculations reveal that the polarization of CuInP 2 S 6 induces a significant modulation of the Dzyaloshinskii-Moriya interaction (DMI) in Fe 3 GaTe 2 . Incorporating these effects into micromagnetic simulations reproduces key features of the experimental hysteresis behaviors, indicating that the polarization-enhanced DMI lowers domain wall formation energy and drives a transition from coherent to incoherent magnetic reversal. These findings not only surmount the challenge of electrically modulating ferromagnetism in vdW systems via remanent ferroelectric polarization at room temperature but also open new pathways for energy-efficient skyrmion manipulation and vdW spintronic device engineering.
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高影响因子
ADVANCED MATERIALS
·
2025
·
IF 26.8
Kai-Yao Wang,Jing-Jing Li,Feng-Qi Shi,Yi-Ming Zhao,Ze-Yu Wang,Xin-Rong Zhang,Lin Cheng,Cheng Wang
Dimensionally adjustable channels are incorporated into a crystalline lattice via strategic stacking of wrinkled layers, boosting rare earth element (REE) ion exchange performance due to the eliminated energy-intensive dehydration and channel rigidity. In [(CH 3 ) 2 NH 2 ] 2 Ga 2 Sb 2 S 7 ( GaSbS-1 ), the lone electron pair (LEP) on Sb 3+ in the trigonal pyramidal {SbS 3 } influences Ga─S bond orientations, creating wrinkled [Ga 2 Sb 2 S 7 ] n 2 n − layers. Staggered stacking forms parallel channels occupied by [(CH 3 ) 2 NH 2 ] + cations, facilitating outstanding exchange for REE 3+ ions (Y 3+ , La 3+ −Lu 3+ ). Dynamic interlamellar expansion endows GaSbS-1 with remarkable kinetics ( R = 97.14%–99.40% within 5 min; k 2 = 2.592–3.462 g mg −1 min −1 ) and capacities (63, 125, 143, and 138 mg g −1 ) for Y 3+ , Ce 3+ , Eu 3+ , and Tm 3+ . It exhibits structural stability across pH = 2–12, with K d values > 10 4 –10 5 mL g −1 at pH = 4–9, and superior selectivity for REE 3+ over competing ions. Performance remains robust in real aqueous environments, including sea water, with maximum REE 3+ removal rates >90%. Rapid kinetics enable efficient column filtration ( R = 93.10%–98.51%) and recycling capability. The GaSbS-1 /PTFE membrane achieves 99.71%–99.95% removal of trace REE 3+ at 1.38 mL min ‒1 cm ‒2 (0.17 s contact time). With high yield, irradiation resistance, and facile elution, GaSbS-1 is a proof-of-concept exchanger for purifying REE-contaminated radioactive wastewater.
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MATERIALS LETTERS
·
2025
·
IF 2.7
Guangyin Liu,Yuhui Zhang,Tao Huang,Jun Shen
Ga-based liquid metal (LM) suffers from severe corrosiveness toward chips and heatsink metals, posing a major obstacle to its practical use. Herein, we propose MXene films as barrier layers to mitigate Ga-induced corrosion. Combining first-principles density functional theory and experimental analyses, anti-corrosion performance and reliability were systematically evaluated. MXene nanosheets were found to self-assemble on Cu surfaces via van der Waals interactions, providing an interfacial adhesion force of 17.23 mN. The coatings effectively inhibit Ga corrosion while maintaining high thermal conductivity and long-term stability. This strategy offers a simple and efficient solution to corrosion issues in Ga-based TIM applications.
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