IEEE ELECTRON DEVICE LETTERS
·
2020
·Vol. 42
·期 1
·58-61
·
IF 4.221
Chuanyu Fu,Yanan Ding,Yixin Zhu,Zhijie Xin,Guoxia Liu,Fukai Shan
One-dimensional metal-oxide nanowire networks (NNs) are considered as important elements in electronics due to their unique physical and electrical performances. In this letter, Sn1-x Gax O NNs were fabricated and field-effect transistors (FETs) based on Sn1-x Gax O NNs with different Sn/Ga ratios were constructed. The characteristics of the FETs have been systematically investigated. In order to promote the adhesion and electrical performance of nanowires, Sn1-x Gax O NNs were welded by introducing the polymer mixture containing poly vinyl pyrrolidone and poly methyl methacrylate. Utilizing a welding process, the transport properties of Sn1-x Gax O NNs have been greatly promoted, and the FETs based on Sn0.8 Ga0.2 O NNs exhibit optimum electrical performance. Once integrated with high-k ZrOx dielectric, the FET based on Sn0.8 Ga0.2 O NNs/ZrOx exhibits high stability and high electrical performance, including aμFE of 5.2 cm2 /V s, an Ion/Ioff of 1.5×106, a subthreshold voltage of 170 mV/decade, an on voltage of -0.25 V, and a negligible hysteresis of ~0.12 V. The successful fabrication of the FETs based on Sn0.8 Ga0.2 O NNs lays the foundation for the development of low-consumption, low-cost and high-performance electronic devices.
研究领域:
电子材料科学
·
纳米技术
·
半导体器件工程
✓ 已验证
DOI
高影响因子
IEEE ELECTRON DEVICE LETTERS
·
2024
·Vol. 45
·期 6
·1036-1039
·
IF 4.1
Jiayang Liu,Yuangan Chen,Pengju Tan,Tianyu Liu,Mingzhu Hu,Mulin Sun,Long Cheng,Xiaolan Ma,Yunlong Zhang,Qin Hu
Cs3Bi2I9 single crystals has attracted increasing attention in perovskite X-ray detectors due to its low cost, nontoxicity, high stability and low detection limit. With the gradual improvement of device performance, the growth of high-quality, low-defect single crystals becomes increasingly crucial. In this work, we developed a polypropylene glycol nucleation control strategy for the effective growth of Cs3Bi2I9 single crystals with fewer defects. The X-ray detectors prepared by this strategy exhibit excellent detection and imaging performance, reaching a sensitivity of
$173.9~\mu $
C
$\cdot $
Gy
$_{\text {air}}^{-{1}}\cdot $
cm
$^{-{2}}$
at 40 V
$\cdot $
mm
$^{-{1}}$
and a detection limit of
$1.57~\mu $
Gy
$_{\text {air}}\cdot $
s
$^{-{1}}$
, and showcasing sharp imaging ability. This research contributes to the advancement of next-generation X-ray detection.
研究领域:
材料科学
·
辐射探测技术
✓ 已验证
DOI
高影响因子
IEEE ELECTRON DEVICE LETTERS
·
2024
·
IF 4.1
Xiyu Jia,Weishuai Duan,Mingchen Xu,Gaoning Fan,Pengyu Zhou,Yonghui Zhang,Hongxing Zheng,Mengjun Wang,Chao Fan
Near-violet (NV) detectors based on two-dimensional materials have attracted much attention due to their atomic-scale thickness and various band gaps. Among them, tin disulfide (SnS
2
) has demonstrated significant potential for high-performance NV detectors due to its unique photoelectric properties. However, SnS
2
-based NV detector still have drawbacks such as low responsivity and high dark current. In this work a tri-layer van der Waals heterojunction of tin disulfide/h-boron nitride/tin selenide (SnS
2
/h-BN/SnSe) is proposed. The detector based on such tri-layer heterojunction exhibits an excellent self-powered detection performance to 405-nm NV illumination with a responsivity of 1.5 AW
-1
, a low dark current of 2.6 pA, and a high fill factor of 51.8%, superior to detectors based on SnS
2
/SnSe bi-layer heterojunctions and most other two-dimensional materials. This study provides an efficient optimizing strategy for SnS
2
-based self-powered detector, thereby offering an opportunity for implementing innovation in NV detectors.
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
IEEE ELECTRON DEVICE LETTERS
·
2024
·Vol. 45
·期 3
·396-399
·
IF 4.1
Yilun Zhong,Jiwei Zou,Taoming Guo,Lei Han,Ye Zou,Wei Tang,Yongpan Liu,Huazhong Yang,Yunlong Guo,Chen Jiang
Transparent organic thin-film transistors (OTFTs) are promising for bioelectronics applications, by allowing simultaneous optical imaging with electrical sensing and modulation. However, the state-of-the-art transparent OTFTs have limited device performance, in terms of low mobility and high threshold voltage. This is mainly attributed to the large contact resistance induced by the energy level mismatch between the transparent electrodes and organic semiconductors. He re, we report transparent OTFTs with indium tin oxide electrodes modified by fluorinated silanes to improve device performance. It is found that the OTFTs with electrode modified by fluorinated silanes exhibit increased mobility from 0.12 cm2/ $\text{V}\cdot \text{s}$ to 1.58 cm2/ $\text{V}\cdot \text{s}$ and lower threshold voltage from–12.45 V to–2.21 V. The contact resistance of the OTFT characterized by a transmission line method, shows a reduction from over 1 $\text{M}\Omega $ to below 100 $\text{k}\Omega $ .
研究领域:
材料科学
·
电子工程
·
生物电子学
✓ 已验证
产品关联
DOI
高影响因子
IEEE ELECTRON DEVICE LETTERS
·
2024
·
IF 4.1
Yuhang Wang,Menghui Xiang,Jihao Li,Shuting Yang,Jiefei Li,Qi Wen,Libo Gao,Junyang Li
Flexible pressure sensors hold considerable promise for applications in marine pressure detection due to their highly conformal capability to accommodate the nonplanar surface. However, fabricating a flexible pressure sensor with heightened sensitivity under substantial hydrostatic pressure in oceanic environments presents an enormous challenge due to the large underwater electromechanical noise. Herein, a flexible iontronic pressure sensor with micropillars was developed to maintain high sensitivity under large pressure loads. This sensor demonstrates excellent sensitivity (14.02 kPa
-1
, 9.60 kPa
-1
) and linear response (R
2
= 0.9956, 0.9901) in air and water, respectively. The pressure sensor exhibits the capability to detect minimal water depth changes of 2 cm, offering discernible responses to pressures spanning from a few kPa to several hundred kPa. Even after its immersion in water for 25 days and 2000 testing cycles, the sensor maintains a high degree of performance consistency. This demonstrates the promising application prospects in autonomous underwater vehicles, diving equipment and marine life monitoring platforms.
研究领域:
材料科学
·
传感器技术
·
海洋工程
✓ 已验证
产品关联
DOI
高影响因子
IEEE ELECTRON DEVICE LETTERS
·
2024
·Vol. 45
·期 4
·685-688
·
IF 4.1
Yaping Song,Zhiyan Ma,Yanyu Cui,Xiaoya Miao,Yunlong Yu,Ke Wu,Hongran Zhao,Sen Liu,Teng Fei,Tong Zhang
In this work, the polymeric ionic liquid (PIL)/ polybenzimidazole (PBI) composites (PIL/PBIs) based humidity sensors were prepared. The humidity sensing properties of the sensors were controlled by the ratio of PIL and PBI in the sensing films, and the optimized sensor performs a high response of 988.1 in the low humidity range (2%−35% RH). The introduction of PBI into sensing film can guarantee the stability of the humidity sensors. The as-prepared sensor can be utilized to detect the moisture in lubricating oil.
研究领域:
材料科学
·
传感器技术
✓ 已验证
产品关联
DOI
高影响因子
IEEE ELECTRON DEVICE LETTERS
·
2023
·Vol. 44
·期 7
·1152-1155
·
IF 4.9
Weishuai Duan,Zhe Liu,Xinfa Zhu,Biao He,Chao Fan,Yonghui Zhang,Mengjun Wang,Hongxing Zheng,Erping Li
Near-ultraviolet (NUV) detectors based on two-dimensional (2D) materials have garnered considerable attention owing to their atomic-scale thickness, varied bandgap, and strong interaction with incident light. In this work, homostructures composed of tin disulfide/chromium–doped tin disulfide (SnS
2
/Cr–SnS
2
) were proposed for 405 nm near-ultraviolet detectors. Afterward, superlative detectors were fabricated through the employment of micro-mechanical exfoliation and polydimethylsiloxane-assisted dry-transfer methods, anchored by the SnS
2
Cr–SnS
2
homostructures. The detectors demonstrated exceptional detection performance for 405 nm NUV radiation with a significant responsivity of
$2.04\times 10^{{3}}\,\,\text {A}\cdot \text {W}^{-{1}}$
and a short response time of 8 ms, exceeding that of detectors based on most 2D materials and even commercial light detectors (Thorlabs FD11A–Si). The work presents an effective homostructure for high-performance SnS
2
-based detectors, thereby opening an opportunity for the utilization of SnS
2
in NUV detectors.
研究领域:
材料科学
·
光电子学
✓ 已验证
DOI
高影响因子
IEEE ELECTRON DEVICE LETTERS
·
2023
·Vol. 44
·期 3
·516-519
·
IF 4.9
Weihao Zheng,Yunlong Zhao,Hongcheng Xu,Yangbo Yuan,Weidong Wang,Libo Gao
Soft piezocapacitive sensor, owing to its simple assembly and low power consumption, draws intensive interests for physiological monitoring. However, crosstalk between proximity sensing units and limited mechanically stretching suppressed its practical application for conventional capacitive sensor array. Here we report a stretchable iontronic pressure sensor (SIPS) array with low proximate crosstalk for epidermal monitoring. Benefiting from electric double layer (EDL) capacitance effect between robust aramid nanofiber (ANF) /MXene (Ti3C2Tx) composite electrode and ionic film, the SIPS exhibits a high sensitivity up to 521.69 kPa−1, low limit of detection (0.22 Pa), broad linear sensing range (200 kPa) and rapid response time (17 ms) as well as long-term stable working durability for 10,000 cycles. The serpentine island bridge structure enables the SIPS array to stretch up to 40%, allowing pulse and grip monitoring of a bent wrist and finger, respectively, through processing circuits. This demonstrates the promising application prospects in vital physiological monitoring.
研究领域:
生物医学工程
·
材料科学
✓ 已验证
DOI
高影响因子
IEEE ELECTRON DEVICE LETTERS
·
2013
·Vol. 34
·期 11
·1424-1426
·
IF 2.789
Yupeng Zhang,Ying Zhang,Bo Fu,Wei Li,Wenbin Guo,Shengping Ruan,Dali Liu,Yu Chen
Sodium titanate Na
2
Ti
6
O
13
nanorods were synthesized by a hydrothermal method and characterized by X-ray diffraction and scanning electron microscopy. Then, the material was coated on a Al
2
O
3
ceramic substrate to fabricate humidity sensors using Ag-Pd as interdigitated electrodes. The sensor shows high humidity sensitivity and fast response and recovery. The impedance changes by five orders of magnitude over a relative humidity (RH) range from 11% to 95%. At the frequency of 100 Hz, response and recovery times are both <;2 s, and the maximum hysteresis is <;3% RH. In addition, the complex impedance at different RH was investigated to understand the sensing mechanism. The results indicate potential applications of sodium titanate for fabricating high-performance humidity sensors.
研究领域:
材料科学
·
传感器技术
✓ 已验证
DOI
高影响因子
IEEE ELECTRON DEVICE LETTERS
·
2021
·Vol. 42
·期 6
·855-858
·
IF 4.187
Hongliang Zu,Yu Chang,Hao Li,Junyu He,Jiayi Li,Xinxu Zhu,Jun Zhang,Fengyun Wang
Although SnO2 nanofibers (NFs) are one of the good candidates as active materials for next-generation consumable electronics, these NFs based devices still suffer from insufficient on-off current ratios, large and negative threshold voltages ( VTH), leading to high energy consumption and rather complicated circuit design. Here, SnO2 NFs field-effect transistors (FET) were fabricated by an electrospinning technique. The device performance can be precisely manipulated by controlling the crystal grain size in the NFs. This is done by simply adjusting the annealing holding time to achieve high-performance enhancement mode. For the optimal annealing holding time of 60 min, the grain size of NFs is about 11 nm, and the devices exhibit the best electrical performance, including a small and positive VTH (≈ 2.2 V), a large switching current ratio (ION/IOFF ≥ 106), and proper carrier mobility ( μFE) (≈ 2.3 cm2 V-1 s-1). Moreover, this approach is universal and can be applied to optimize other metal oxide semiconductors such as ZnO NFs. This simple and facile method indicates that adjusting annealing holding time is a potential way to control the grain size to achieve low voltage operation and enhancement mode 1D metal oxide FETs.
研究领域:
材料科学
·
纳米电子学
·
半导体器件
·
薄膜晶体管
·
纳米材料
✓ 已验证
DOI
高影响因子
IEEE ELECTRON DEVICE LETTERS
·
2019
·Vol. 41
·期 1
·62-65
·
IF 3.753
Chuanyu Fu,Yanan Ding,Youchao Cui,You Meng,Zhao Yao,Guoxia Liu,Fukai Shan
Electrospinningtechnique is considered to be one of the most powerful approaches for the preparation of one-dimensional (1D) metal oxide nanofiber networks (NFNs). In this report, In2O3 NFNs were fabricated by electrospinning using polymethyl methacrylate (PMMA) as polymer and epoxy resin as additive. Benefiting from the excellent chemical properties of PMMA, In2O3 NFNs with impact stacking were prepared at a relatively low annealing temperature by a welding process. The welded In2O3 NFNs were characterized by various techniques and the electrical performance of the field-effect transistors (FETs) based on the welded In2O3 NFNs were systematically investigated. It is observed that the FET based on In2O3 NFNs annealed at 320 °C, with a nanofiber density of 0.4 μm-1 exhibits high electrical performance,including an ION/IOFF of ~5×107, a μFE of 1.27 cm2/V s, an on voltage of -8 V and a hysteresis of 5 V. A device array with 4×5 units was fabricated and tested, confirming the excellent reliability and reproducibility of the FET.
研究领域:
材料科学
·
纳米技术
·
电子器件
·
半导体物理
✓ 已验证
DOI
高影响因子
IEEE ELECTRON DEVICE LETTERS
·
2023
·Vol. 44
·期 8
·1364-1367
·
IF 4.9
Chuanyu Fu,Hangyuan Cui,Shuo Ke,Yixin Zhu,Xiangjing Wang,Yang Yang,Changjin Wan,Qing Wan
In this letter, we propose neuromorphic transistors employing indium oxide (In2O3) nanofibers as the channel layers. Basic synaptic function, such as short-term memory can be emulated by one nanofiber neuromorphic transistor. Nonlinear synaptic function and short-term memory characteristic of such neuromorphic transistors are favorable for reservoir computing (RC) system with high energy-efficiency. Ultra-low energy consumption (15 pJ per reservoir state) and ultra-high accuracy (100%) of speech digital recognition are realized based on such nanofiber neuromorphic transistors, proving a great potential of the RC system for intelligent processing tasks.
研究领域:
神经形态计算
·
纳米电子学
·
人工智能
·
储层计算
·
低功耗电子
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）