Green Processing and Synthesis
·
2022
·Vol. 11
·期 1
·536-544
·
IF 3.97
Ba-Duc Tran,Phuong-Nam Tran,Xuan-Thanh Bui,Duy-Hung Nguyen,Thanh-Tung Duong
In this study, CsPb 1– x
Mn
x
Br 3–2 x
Cl 2 x
( x = 0–0.5) nanoparticles were synthesized directly in toluene solvents at high temperature. This approach results in small-size nanoparticles, which can be used in photoelectric components without adding a filtration process to eliminate high-temperature solvents such as octadecene. The high content Mn 2+ -incorporated CsPb(Cl/Br) 3 host is observed by strongly wideband emission at 592 nm of manganese d-states spin and orbital forbidden transition. After infiltration into mesoporous TiO 2 , the Mn 2+ ion receives energy from the CsPb(Cl/Br) 3 host (irradiated 405 nm light-emitting diode source) and effectively transfers to the TiO 2 scaffold layer. As a result, a metal/semiconductor/metal planar structure photodetector with m-TiO 2 /CsPb 1– x
Mn
x
Br 3–2 x
Cl 2 x
( x = 0–0.5) composite showed several figures of merit compared to bare m-TiO 2 and m-TiO 2 /CsPbBr 3 such as on/off ratio of 10 4 times, responsivity of 1.67 A·W −1 , and detectivity of 4.42 × 10 9 Jones. The key factors contributing to the growth of the on/off ratio include the decreasing dark current and enhancing exciton energy and transportation due to the infiltration of CsPb 1– x
Mn
x
Br 3–2 x
Cl 2 x
( x = 0–0.5) perovskite quantum dots into mesopores of the m-TiO 2 scaffold layer.
研究领域:
材料科学
·
纳米技术
·
光子学
·
半导体器件
✓ 已验证
DOI
高影响因子
NANOTECHNOLOGY
·
2023
·Vol. 34
·期 14
·145402
·
IF 3.5
Hong-Xiang An,Bao-Shi Qiao,Zhi-Hong Zhang,Zhen-Dong Lian,Zhipeng Wei,Xiao-Shuang Li,Qing-Guang Zeng,Bo Wang,Kar Wei Ng,Shuang-Peng Wang
Copper-based halide perovskites have shown great potential in lighting and photodetection due to their excellent photoelectric properties, good stability and lead-free nature. However, as an important piece of copper-based perovskites, the synthesis and application of RbCu2I3 have never been reported. Here, we demonstrate the synthesis of high-quality RbCu2I3 microwires (MWs) by a fast-cooling hot saturated solution method. The prepared MWs exhibit an orthorhombic structure with a smooth surface. Optical measurements show the RbCu2I3 MWs have a sharp ultraviolet absorption edge with 3.63 eV optical band gap and ultra-large stokes shift (300 nm) in photoluminescence. The subsequent photodetector based on a single RbCu2I3 MW shows excellent ultraviolet detection performance. Under the 340 nm illumination, the device shows a specific detectivity of 5.0 × 109 Jones and a responsivity of 380 mA·W−1. The synthesis method and physical properties of RbCu2I3 could be a guide to the future optoelectronic application of the new material.
研究领域:
材料科学
·
光电子学
·
半导体物理
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Advanced Optical Materials
·
2025
·
IF 7.2
Tuo Zhang,Yuan Ren,Xueqiong Cui,Zhenliang Li,Yujian Rao,Zejun Han,Qiongfeng Shi,Li Tao
Surface topography serves as powerful tuning knobs for enhancing the performance of compound semiconductor-based photodetectors. However, existing studies have been confined to microscale or submicron structures (e.g., photonic crystals) due to the challenges in fabricating well-defined sub-50 nm mesostructures in semiconductor thin films. Here, a programmable and scalable approach to synthesize mesoporous Bi 2 Se 3 (mBi 2 Se 3 ) films with precisely tunable pore size (13–30 nm), porosity, thickness, and crystallinity via amphiphilic block copolymer-templated electrochemical deposition is presented. The resulting nanoscale spherical interfaces enable multi-level light scattering, significantly boosting photodetector performance. The mBi 2 Se 3 /Au/Si based optimized devices exhibit a responsivity (R) of 6 mA W −1 , a detectivity (D*) of 10 13 Jones, and a sensitivity ( S ) of 10 6 cm 2 /W—orders of magnitude higher than their non-porous counterparts, and superior to other reported Bi 2 Se 3 based or mesostructured photodetectors. This work advances optical micro/nanostructure engineering down to the 10-nm scale, paving the way for next-generation photodetectors that simultaneously achieve high responsivity, detectivity, and speed. These findings hold great promise for applications in high-resolution infrared imaging and real-time image recognition.
研究领域:
材料科学
·
纳米技术
·
半导体物理
·
电化学
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
IEEE SENSORS JOURNAL
·
2025
·
IF 4.5
Jijie Zhao,Huan Liu,Lier Deng,Weiguo Liu,Bin Sun,Bin Liu,Xiangqian Wang,Xiaoping Gao
Lead sulfide (PbS) colloidal quantum dots (CQDs) are widely used due to their tunable bandgap and high compatibility in composite integration with silicon, expanding the spectral response range of silicon-based photodetectors from visible light to short-wave infrared. The silicon dangling bonds were effectively passivated through CH3I, and the band alignment at the heterojunction interface was adjusted. It reduces electron recombination at the interface, thereby achieving a broad spectral response of silicon-based PbS CQDs heterojunction photodetectors spanning from 380 nm to 1600 nm. As per the research findings, Si:PbS CQDs photodetectors passivated with CH3I showcase impressive characteristics with a rectification ratio of 1.2× 102 and a high on-off ratio of 3.1× 103. These characteristics underscore a remarkable photovoltaic effect within the detectors. The detector achieves an average external quantum efficiency of 37% in the visible and short wave infrared spectrum. At 1470 nm, the responsivity of the Si:PbS CQDs photodetector reaches 0.22 A/W, with a detectivity of 3.3×1011 Jones, marking a 28-fold increase compared to the Si:PbS CQDs photodetector without CH3I passivation. This work offers a new strategy for manufacturing low-cost, high-performance PbS CQDs photodetectors compatible with silicon arrays.
研究领域:
光电子学
·
纳米技术
·
半导体物理
·
材料科学
·
红外探测
✓ 已验证
产品关联
DOI
高影响因子
Materials Today Chemistry
·
2025
·
IF 6.7
Xiao-Dong Li,Li Luo,Zhu Wang,Liangliang Liu,Nan Ding
Broadband photodetectors (PDs) spanning the ultraviolet to short-wavelength infrared (UV-SWIR) spectrum are highly desirable for diverse applications including environmental monitoring, biomedical imaging, and industrial inspection. However, achieving high responsivity and fast response across such a wide spectral range remains a significant challenge, often limited by the narrow bandgap absorption of single materials or inefficient carrier collection in conventional device architectures. To address this problem, we designed and fabricated a novel heterojunction photodetector based on CsPbI 3 perovskite quantum dots (PQDs) and In 0.53 Ga 0.47 As layer . The core innovation lies in the engineered band alignment at the heterojunction interface, which facilitates exceptionally efficient charge transfer and separation. Compared to the bare CsPbI 3 PQDs (UV–visible) or In 0.53 Ga 0.47 As PDs (SWIR), this CsPbI 3 /In 0.53 Ga 0.47 As heterojunction PDs not only obtained the detection wavelength from UV to SWIR, but also improve the photocurrent across the entire range. Furthermore, the CsPbI 3 PQDs/In 0.53 Ga 0.47 As heterojunction PDs demonstrate outstanding detectivity of above 10 10 Jones. Meanwhile, the PDs also demonstrate significantly long-term stability, and the photocurrent of the device maintains 96.5 % of the initial one after 10000 cycles. This work demonstrates the pivotal role of efficient interfacial charge transfer in heterojunctions and provides a promising strategy for developing next-generation optoelectronic devices covering the UV-SWIR window.
研究领域:
光电子学
·
材料科学
·
纳米技术
·
半导体器件
·
光子学
✓ 已验证
产品关联
DOI
高影响因子
Nano Energy
·
2016
·
IF 11.553
Zhijuan Xu,Shisheng Lin,Xiaoqiang Li,Shengjiao Zhang,Zhiqian Wu,Wenli Xu,Yanghua Lu,Sen Xu
Two dimensional material/semiconductor heterostructures offer alternative platforms for optoelectronic devices other than conventional Schottky and p–n junction devices. Herein, we use MoS 2 /GaAs heterojunction as a self-driven photodetector with wide response band width from ultraviolet to visible light, which exhibits high sensitivity to the incident light of 635 nm with responsivity as 321 mA/W and detectivity as 3.5×10 13 Jones (Jones=cm Hz 1/2 W −1 ), respectively. Employing interface design by inserting h-BN and photo-induced doping by covering Si quantum dots on the device, the responsivity is increased to 419 mA/W for incident light of 635 nm. Distinctly, attributing to the low dark current of the MoS 2 /h-BN/GaAs sandwich structure based on the self-driven operation condition, the detectivity shows extremely high value of 1.9×10 14 Jones for incident light of 635 nm, which is higher than all the reported values of the MoS 2 based photodetectors. Further investigations reveal that the MoS 2 /GaAs based photodetectors have response speed with the typical rise/fall time as 17/31 μs. The photodetectors are stable while sealed with polymethyl methacrylate after storage in air for one month. These results imply that monolayer MoS 2 /GaAs heterojunction may have great potential for practical applications as high performance self-driven photodetectors.
研究领域:
材料科学
·
光电
·
半导体器件
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2024
·
IF 8.3
Zhi-Hong Zhang,Shan-Shan Yan,Yu-Long Chen,Zhen-Dong Lian,Ai Fu,You-Chao Kong,Lin Li,Shi-Chen Su,Kar-Wei Ng,Zhi-Peng Wei,Hong-Chao Liu,Shuang-Peng Wang
The rapid evolution of the Internet of Things has engendered increased requirements for low-cost, self-powered UV photodetectors. Herein, high-performance self-driven UV photodetectors are fabricated by designing asymmetric metal–semiconductor–metal structures on the high-quality large-area CsCu2I3 microwire arrays. The asymmetrical depletion region doubles the photocurrent and response speed compared to the symmetric structure device, leading to a high responsivity of 233 mA/W to 355 nm radiation. Notably, at 0 V bias, the asymmetric device produces an open-circuit voltage of 356 mV and drives to a short-circuit current of 372 pA; meanwhile, the switch ratio (Iph/Idark) reaches up to 103, indicating its excellent potential for detecting weak light. Furthermore, the device maintains stable responses throughout 10000 UV-light switch cycles, with negligible degradation even after 90-day storage in air. Our work establishes that CsCu2I3 is a good candidate for self-powered UV detection and thoroughly demonstrates its potential as a passive device.
研究领域:
材料科学
·
光子学
·
纳米技术
·
电子学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2025
·
IF 6.3
Ruibin Wang,Shilong Zhang,Jiahai Wang,Qinqin Yang,Chenhong Liu,Linghua Jin,Huiyang Bian,Ye Zhang
Innovative and efficient photodetectors (PDs) using carbon dots (CDs) have drawn tremendous interest from electrochemical analyses in recent years. This study develops a chips Ahoy cookies-like architecture comprising CDs-decorated SnSe 2 (CSS) through a simple hydrothermal method. The CSS-based PDs demonstrate excellent photo-responsive behaviors with optimal photocurrent density ( P ph , 60.13 μA cm −2 ), photoresponsivity ( R ph , 56.03 μA W −1 ), and detectivity (2.84 × 10 10 Jones). The benefits of CDs for the enhanced photodetection of CSS were ascribed to the synergy between CDs and SnSe 2 providing an engineered interface and abundant active surface sites. It was also found that the unique morphology of CSS was compatible with the performance enhancement of CDs under optimal conditions. In this way, the CSS-based flexible PDs can enrich the fundamental study of CDs and pave the way for the exploration of diselenide-based composites for electrochemical photodetection.
研究领域:
材料科学
·
纳米技术
·
光电子学
·
电化学
·
半导体器件
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2024
·Vol. 35
·期 8
·1-9
·
IF 2.8
Peng Yanyan,Jiang Dayong,Zhao Man
The recent trend of combining perovskite with other materials to enhance optoelectronic performance has garnered significant interest. In this paper, MAPb 0.9 Sn 0.1 I 3 and ZnO–MAPb 0.9 Sn 0.1 I 3 photodetector were prepared by frequency magnetron sputtering and sol–gel spin-coating method. Hybrid heterojunction photodetectors have more beneficial optoelectronic performance compared to MAPb 0.9 Sn 0.1 I 3 photodetector, due to the presence of built-in electric fields, which can suppress the recombination of electrons and holes. At 7 V bias conditions, the responsivities of MAPb 0.9 Sn 0.1 I 3 photodetector were 0.022 and 0.015 A/W, and the responsivities of ZnO–MAPb 0.9 Sn 0.1 I 3 photodetector were 0.39 and 0.99 A/W obtained under 350 and 850 nm illumination, respectively. The maximum external quantum efficiency reaches 144.47%, the detection rate was 5.53 × 10 11 Jones and the light to dark ratio was 2.95 × 10 3 of ZnO–MAPb 0.9 Sn 0.1 I 3 photodetector. This study provides a basis for the preparation of perovskite heterojunction photodetectors with high optoelectronic performance. High performance UV–vis–NIR photodetectors based on ZnO/organic–inorganic hybrid Sn–Pb hybrid perovskite heterojunction.
研究领域:
材料科学
·
光电子学
·
半导体物理
✓ 已验证
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE
·
2022
·Vol. 57
·期 2
·1186-1197
·
IF 4.682
Li Yana,Li Yuqiang,Ji Yi,Wang Hong,Zhong Dingyong
Ga 2 O 3 is considered as a candidate for the preparation of solar-blind photodetectors due to its large direct band gap. Developing low-cost preparation methods of high-quality Ga 2 O 3 films is of importance for large-scale applications. In this work, we investigate the preparation of Sn doped β-Ga 2 O 3 films by using simple and cheap sol–gel method under ambient condition. It is found that Sn doping induces a growth mode transformation from \(\left( {\overline{2}01} \right)\) to \(\left( {\overline{3}11} \right)\) oriented texture on the c-plane sapphire substrates. With an optimal Sn proportion, high-quality β-Ga 2 O 3 films consisting of needle-like grains are observed. Compared with the undoped films, the Sn-doped films with needle-like grains obtained a low dark current of 0.76 nA, performed an on/off ratio as high as ~ 6000, responsivity, R of 164 mA/W and D* of 3.21 × 10 12 Jones at a bias voltage of 30 V in the configuration of metal–semiconductor–metal solar-blind deep ultraviolet detectors. This is the highest on/off ratio of Ga 2 O 3 solar-blind photodetectors fabricated by sol–gel method reported up to now and has the potential to be applied in practical use. Graphical abstract
研究领域:
材料科学
·
半导体物理
·
光电技术
✓ 已验证
DOI
高影响因子
ACS Nano
·
2020
·
IF 14.588
Qiaoyan Hao,Jidong Liu,Gang Wang,Jiewei Chen,Haibo Gan,Jiaqi Zhu,Yuxuan Ke,Yang Chai,Junhao Lin,Wenjing Zhang
Indium selenide (InSe) has become a research hotspot because of its favorable carrier mobility and thickness-tunable band gap, showing great application potential in high-performance optoelectronic devices. The trend of miniaturization in optoelectronics has forced the feature sizes of the electronic components to shrink accordingly. Therefore, atomically thin InSe crystals may play an important role in future optoelectronics. Given the instability and ultralow photoluminescent (PL) emission of mechanically exfoliated ultrathin InSe, synthesis of highly stable mono- and few-layer InSe nanosheets with high PL efficiency has become crucial. Herein, ultrathin InSe nanosheets were prepared via thermal annealing of electrochemically intercalated products from bulk InSe. The size and yield of the as-prepared nanosheets were up to ∼160 μm and ∼70%, respectively, and ∼80% of the nanosheets were less than five layer. Impressively, the as-prepared nanosheets showed greatly enhanced stability and PL emission because of surface modification by carbon species. Efficient photoresponsivity of 2 A/W was achieved in the as-prepared nanosheet-based devices. These nanosheets were further assembled into large-area thin films with photoresponsivity of 16 A/W and an average Hall mobility of about 5 cm2 V–1 s–1. Finally, one-dimensional (1D) InSe nanoscrolls with a length up to 90 μm were constructed by solvent-assisted self-assembly of the exfoliated nanosheets.
研究领域:
材料科学
·
纳米技术
·
光电
·
半导体物理
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry A
·
2024
·Vol. 12
·期 26
·16034-16042
·
IF 10.7
Saqib Nawaz Khan,Huili Liang,Yan Wang,Xiaolong Du,Zengxia Mei
With the advancement of perovskite research, there is a growing urgency to address the imperative need for practical applications while simultaneously tackling the enduring challenges of material reliability and lead (Pb) toxicity. The crystallization, morphology and optical properties of the resultant film and device performance during solution processing are heavily influenced by the solution-based intermediate, a state determined using the coordination between solute and solvent. Solvent–solute coordination is closely correlated with solvent characteristics including ionization capabilities, dielectric constant, hydrolysis, and reactivity with solutes. Deionized water (D-water) characterized by its high polarity, ionization capability, and dielectric constant, when used as a co-solvent with dimethylformamide (DMF) and dimethyl sulfoxide (DMSO), facilitates stronger coordination with CsI/SnI4 species in Cs2SnI6 precursor solution. This enhanced coordination leads to improved solvation, precursor reactivity, and solution homogeneity. Incorporating an appropriate amount of D-water as a co-solvent into Cs2SnI6 precursor solution allows for tuning solvent coordination and control over the resulting thin film crystallization and morphology. The co-solvent diluted optimized Cs2SnI6 thin film leads to the fabrication of energy-efficient broadband 4 × 3 photodetector arrays ranging from UV to NIR giving a responsivity of 5.5 A W−1 at a substantially lower bias voltage of −0.1 V with stable operation stability in ambient air. These findings underscore the potential advantages of solution-processed Cs2SnI6 perovskites in various optoelectronic applications.
研究领域:
材料科学
·
光电子学
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）