ACS Applied Materials & Interfaces
·
2025
·
IF 8.2
Guoheng Xu,Hangyuan Cui,Li Wang,Miliang Zhang,Wenchao Liu,Tingting Mei,Bin Wu,Changjin Wan,Kai Xiao
The signal transmission utilizing ions as carriers provides the brain with efficient and outstanding computational capability. The controllable ion transport in neurons relies on a multiplicity of ion channels, which have ångström (Å) dimensions. The interactions between ions and channel walls contribute to their nonlinear ion transport behavior, which can be manifested as natural memory resistors, i.e., memristors. However, it remains a great challenge to understand the relationship between the nonlinear ion transport behaviors of different solid-state ionic memristors and artificial ion channel properties. Here, we present two different unipolar and bipolar ionic memristors based on artificial Å-scale channels in polymeric membranes with varying surface charge densities. The resistive switching mechanism of ionic memristors is attributed to synergistic energy barriers arising from size exclusion and interactions between ions and channel walls. The synaptic functions were mimicked by configuring synaptic devices using ionic memristors, which can be used to stimulate artificial neural network algorithms for energy-efficient image recognition. Our results open a pathway for revealing the nonlinear dynamics of fluidic memristors based on artificial Å-scale channels and realizing neuromorphic computation in aqueous media.
研究领域:
生物物理学
·
材料科学
·
神经科学
✓ 已验证
DOI
PubMed
高影响因子
Advanced Materials Interfaces
·
2022
·Vol. 10
·期 2
·2201513
·
IF 6.389
Zehen Liu,Pengpeng Cheng,Ruyan Kang,Jian Zhou,Xian Zhao,Jia Zhao,Zhiyuan Zuo
The rapid development of artificial intelligence (AI) requires processing vast amounts of complex information, which has accelerated the exploration of neuromorphic computing systems. Artificial neuromorphic synapses based on memristors of organic–inorganic halide perovskites (OHPs) potentially exploit a niche area for brain-inspired neuromorphic computing, which can be operated as biological synapses to realize signal processing. Here, MAPbI 3 -based memristors with reliable resistance states triggered by electric fields or photons are reported. A model for resistive switching (RS) originated from conductive filaments (CFs) based on intrinsic defect migrations is proposed. Importantly, the unique photoresponsive characteristic provides the opportunity to enhance the RS through multifunctional photo-coupling. Enhanced by monochromatic illumination, memristors exhibit RS with remarkable characteristics such as ultralow operating voltage, high ON/OFF ratio (4.3 × 10 3 ), small HRS/LRS variation coefficient (29.91%/13.82%), stable endurance (10 4 cycles), long retention time (10 5 s), and ultralow power consumption. Moreover, photons can modulate the nonvolatile devices to maintain a great ON/OFF ratio over 9 days under ambient conditions without any encapsulation. The research presents plausible applications of memristors in coupling ions, electrons, and photons, thus contributing to applicability for multifunctional optoelectronics and optogenetics tunable neuromorphic systems.
研究领域:
材料科学
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电子工程
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神经科学
✓ 已验证
产品关联
DOI
高影响因子
ACS Omega
·
2022
·
IF 4.132
Muhammad Zaheer,Aziz-Ur-Rahim Bacha,Iqra Nabi,Jun Lan,Wenhui Wang,Mei Shen,Kai Chen,Guobiao Zhang,Feichi Zhou,Longyang Lin,Muhammad Irshad,Faridullah Faridullah,Awais Arifeen,Yida Li
Herein, we report a solution-processable memristive device based on bismuth vanadate (BiVO4) and titanium dioxide (TiO2) with gallium-based eutectic gallium–indium (EGaIn) and gallium–indium-tin alloy (GaInSn) liquid metal as the top electrode. Scanning electron microscopy (SEM) shows the formation of a nonporous structure of BiVO4 and TiO2 for efficient resistive switching. Additionally, the gallium-based liquid metal (GLM)-contacted memristors exhibit stable memristor behavior over a wide temperature range from −10 to +90 °C. Gallium atoms in the liquid metal play an important role in the conductive filament formation as well as the device’s operation stability as elucidated by I–V characteristics. The synaptic behavior of the GLM-memristors was characterized, with excellent long-term potentiation (LTP) and long-term depression (LTD) linearity. Using the performance of our device in a multilayer perceptron (MLP) network, a ∼90% accuracy in the handwriting recognition of modified national institute of standards and technology database (MNIST) was achieved. Our findings pave a path for solution-processed/GLM-based memristors which can be used in neuromorphic applications on flexible substrates in a harsh environment.
研究领域:
材料科学
·
电子工程
·
计算机科学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Light-Science & Applications
·
2020
·Vol. 9
·期 1
·1-11
·
IF 13.714
Xing Jun,Zhao Chen,Zou Yuting,Kong Wenchi,Yu Zhi,Shan Yuwei,Dong Qingfeng,Zhou Ding,Yu Weili,Guo Chunlei
Defect density is one of the most significant characteristics of perovskite single crystals (PSCs) that determines their optical and electrical properties, but few strategies are available to tune this property. Here, we demonstrate that voltage regulation is an efficient method to tune defect density, as well as the optical and electrical properties of PSCs. A three-step carrier transport model of MAPbBr 3 PSCs is proposed to explore the defect regulation mechanism and carrier transport dynamics via an applied bias. Dynamic and steady-state photoluminescence measurements subsequently show that the surface defect density, average carrier lifetime, and photoluminescence intensity can be efficiently tuned by the applied bias. In particular, when the regulation voltage is 20 V (electrical poling intensity is 0.167 V μm −1 ), the surface defect density of MAPbBr 3 PSCs is reduced by 24.27%, the carrier lifetime is prolonged by 32.04%, and the PL intensity is increased by 112.96%. Furthermore, a voltage-regulated MAPbBr 3 PSC memristor device shows an adjustable multiresistance, weak ion migration effect and greatly enhanced device stability. Voltage regulation is a promising engineering technique for developing advanced perovskite optoelectronic devices.
研究领域:
材料科学
·
光学工程
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电子工程
✓ 已验证
DOI
高影响因子
Small
·
2025
·
IF 12.1
Yue Liu,Yuanhang Zhang,Xufeng Zhou,Zhuming Wang,Zhe Yang,Jialin Meng,Chen Wang,Xuemei Sun,Lin Chen,Peining Chen,Huisheng Peng
Memristors with high computing capabilities hold significant potential as processing devices in the era of information explosion, but their applications are largely hindered by the trade-off between memristive performance and operation uniformity. Extensive efforts are devoted to designing or regulating memristive layers of memristors to improve device performance, while few studies focused on the interface structure at cross points of memristors. Herein, inspired by the tip effect, a nanofiber memristor with highly-curved interwoven interface is designed by assembling nanofiber electrodes using dielectrophoretic method. The nanofiber memristor shows high operation uniformity with an ultralow set voltage standard deviation of 0.014 V, which is even superior to that of state-of-the-art oxide-based planar memristors. Experimental and simulation analysis reveals that the highly-curved interface can efficiently concentrate electric field distribution and confine the switching region, thus facilitating the migration of silver ions and suppressing the formation of random conductive filaments. Nanofiber memristor arrays with good device reproducibility are further integrated for fundamental logic gate circuits like NOT, AND, and OR. This work offers a new insight for constructing high-performing nanoelectronics.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ACS Applied Materials & Interfaces
·
2021
·
IF 9.229
Lei Liu,Ziqiang Cheng,Bei Jiang,Yanxin Liu,Yanli Zhang,Fan Yang,Jiahong Wang,Xue-Feng Yu,Paul K. Chu,Cong Ye
The memristor is a foundational device for an artificial synapse, which is essential to realize next-generation neuromorphic computing. Herein, an optoelectronic memristor based on a two-dimensional (2D) transitional-metal trichalcogenide (TMTC) is designed and demonstrated. Owing to the excellent optical and electrical characteristics of titanium trisulfide (TiS3), the memristor exhibits stable bipolar resistance switching (RS) as a result of the controllable formation and rupturing of the conductive aluminum filaments. Multilevel storage is realized with light of multiple wavelengths between 400 and 808 nm, and the synaptic properties such as conduction modulation and spiking timing-dependent plasticity (STDP) are achieved. On the basis of the photonic potentiation and electrical habitual ability, Pavlovian-associative learning is successfully established on this TiS3-based artificial synapse. All these results reveal the large potential of 2D TMTCs in artificial neuromorphic chips.
研究领域:
材料科学
·
神经科学
·
电子工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ACS Applied Nano Materials
·
2025
·
IF 5.5
Jing Hu,Shaogui Wu
A facile solvothermal strategy employing l-asparagine as the sole carbon–nitrogen precursor was developed for the synthesis of bright blue-emitting carbon dots (B-CDs) with remarkable optical properties. The as-prepared B-CDs exhibit optimal excitation/emission wavelengths at 378 and 466 nm, a notably high quantum yield (QY) of 19.2%, and superior aqueous dispersibility, salt tolerance, and photostability. Leveraging their ultrasensitive response toward tetracycline antibiotics (TET, CTC, and OTC), we engineered a fluorescent nanoprobe enabling quantitative detection with an impressive linear correlation coefficient (R2) of 0.999 and a detection limit down to 0.139 μmol/L. Furthermore, preliminary investigations revealed the exceptional potential of B-CDs as functional materials in memristive devices, demonstrating their unique advantages for advanced electronic applications. This study not only expands the multifunctionality of carbon-based nanomaterials but also provides innovative material platforms for antibiotic surveillance and neuromorphic computing technology.
研究领域:
材料科学
·
生物传感
·
电子工程
✓ 已验证
产品关联
DOI
高影响因子
ADVANCED MATERIALS
·
2024
·
IF 27.4
Yingjie Zhao,Zhefeng Lou,Jiaming Hu,Zishun Li,Lanxin Xu,Zhe Chen,Zhuokai Xu,Tao Wang,Mengqi Wu,Haoting Ying,Minghao An,Wenbin Li,Xiao Lin,Xiaorui Zheng
Smart memristors with innovative properties are crucial for the advancement of next-generation information storage and bioinspired neuromorphic computing. However, the presence of significant sneak currents in large-scale memristor arrays results in operational errors and heat accumulation, hindering their practical utility. This study successfully synthesizes a quasi-free-standing Bi 2 O 2 Se single-crystalline film and achieves layer-controlled oxidation by developing large-scale UV-assisted intercalative oxidation, resulting β-Bi 2 SeO 5 /Bi 2 O 2 Se heterostructures. The resulting β-Bi 2 SeO 5 /Bi 2 O 2 Se memristor demonstrates remarkable self-rectifying resistive switching performance (over 10 5 for ON/OFF and rectification ratios, as well as nonlinearity) in both nanoscale (through conductive atomic force microscopy) and microscale (through memristor array) regimes. Furthermore, the potential for scalable production of self-rectifying β-Bi 2 SeO 5 /Bi 2 O 2 Se memristor, achieving sub-pA sneak currents to minimize cross-talk effects in high-density memristor arrays is demonstrated. The memristors also exhibit ultrafast resistive switching (sub-100 ns) and low power consumption (1.2 pJ) as characterized by pulse-mode testing. The findings suggest a synergetic effect of interfacial Schottky barriers and oxygen vacancy migration as the self-rectifying switching mechanism, elucidated through controllable β-Bi 2 SeO 5 thickness modulation and theoretical ab initio calculations.
研究领域:
材料科学
·
神经形态计算
·
信息存储技术
✓ 已验证
DOI
高影响因子
OPTIK
·
2019
·
IF 1.914
Mingjun Chen,Guoyi Dong,Xue Li,Zichen Gao,Hao Feng,Fenghe Wang,Guan Li,Xu Li
In this report we successful synthesized MoS 2 QDs with different size using 1-Dodecanethiol as sulfur source by one pot method. The X-ray diffraction pattern confirmed the formation of hexagonal MoS 2 , whereas the transmission electron microscopic analysis established the growth of zero dimension morphology MoS 2 QDs with the reaction temperature. The Fourier transforms infrared spectroscopy and X-ray photoelectron spectroscopy proved that the surfaces of MoS 2 QDs were coated by thiol and 2H phase MoS 2 were formed. Generally, memristor devices have two states (ON state and OFF state) at the same voltage due to voltage dependent resistance change, which properties can be used for storing information. In this paper, a memristor devices with ITO/PEDOT:PSS /MoS 2 & PVA/Al structure was prepared and the influence of MoS 2 QDs size on the electrical properties of as-prepared devices was investigated. The results indicated that the properties of memristor based on MoS 2 QDs can be modulated by the technology parameters of MoS 2 QDs.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Nano Materials
·
2023
·
IF 5.9
Shaohui Kang,Jingzhou Shi,Jiang Feng,Jiaming Fan,Song Xue,Gangri Cai,Jin Shi Zhao
Critical to artificial intelligence’s future is emulating biological synapses with memristors. Moreover, according to a wide variety, low cost, simple fabrication, and good flexibility, organic materials provide a competitive approach in memristor and synapse emulation, especially in devices where ions carry current. Polyelectrolytes with different molecular structures were used as functional layers in this study to enhance the memory and synapse performance of polyelectrolyte bilayer-based memristors, performed by ions, and polyelectrolyte chain migration caused a potential drop change at the interface of the ∼15 nm thick polyelectrolyte bilayer and its electrodes. Consequently, the memory device with strong polyelectrolyte sodium poly(styrene sulfonic acid) (PSS) and poly(diallyl dimethylammonium chloride) (PDAC), which were prepared by spin-coating, shows outstanding resistive switching performance and synapse functionalities than those with weak polyelectrolytes and/or polyelectrolytes without a ring structure. Particularly, the indium tin oxide (ITO)/PSS/PDAC/ITO device shows almost linear potentiation and depression characteristics by applying continuous pulse voltage, which results in high performance on the artificial neural network simulation as 90% on the Mixed National Institute of Standards and Technology data set. The steric hindrance between the two polyelectrolytes with the five-ring structure can be attributed to the causation of linear conductance update. Furthermore, it shows short- and long-term plasticity during potentiation and depression, which is essential for the development of neuromorphic systems with complex cognitive capabilities.
研究领域:
材料科学
·
神经形态计算
·
有机电子学
✓ 已验证
产品关联
DOI
高影响因子
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
·
2023
·
IF 4.1
Huiyan Huang,Guoshu Dai,Xinghua Wu,Yuheng Wu,Aixiang Wei,Zhen Liu
In this work, lead-free and non-toxic (CH 3 NH 3 ) 3 Bi 2 I 9 (abbreviated as MABI) films are synthesized using a two-step sol-gel method, and FTO/MABI/Ag memristors are fabricated based on MABI films. The memristive behaviors in the devices were studied, showing controllable resistance change under voltage sweeps as well as pulses. The memristors are capable of mimicking the plasticity of biological synapses by setting pulse parameters, such as paired pulse facilitation (PPF), long-term plasticity, spike-timing-dependent plasticity (STDP), spike-rate-dependent plasticity (SRDP), and spike-number-dependent plasticity (SNDP). Moreover, the cycle of “learning-forgetting-relearning” typically observed in human learning can be also realized by the memristor. Based on study of current conduction behavior and the influence of top electrodes on I–V hysteresis in the memristors, it is concluded that the formation and rupture of conductive filaments formed by iodine vacancies in the MABI films are responsible for memristive characteristics. The MABI film and FTO/MABI/Ag memristor demonstrated good stability in a three-month test conducted in ambient air. The lead-free, non-toxic, and stable MABI-based memristors can be used promisingly for neuromorphic computing and machine learning in the future.
研究领域:
材料科学
·
神经科学
·
电子工程
✓ 已验证
产品关联
DOI
高影响因子
Advanced Materials Interfaces
·
2022
·Vol. 9
·期 32
·2201280
·
IF 6.389
Qi Xue,Ke Zhang,Jianghu Liang,Yu Sun,Xiaonong Zhang,Chun-Chao Chen,Yunwen Wu,Huiqin Ling,Ming Li,Tao Hang
Transient electronics have been intensively studied due to their potential in bio-diagnostics and therapeutic areas. However, most devices only serve as the terminal of data collection and storage, and the clinical decision must rely on doctor analysis, which cannot provide timely warning and treatment when facing an emergency. Thus, it is critically important to build a device integrated with data storage and neuromorphic computing that can operate in physiological environments. In this work, a multifunctional memristor with an Ag/combustion zinc oxide/W structure is proposed. The memristor exhibits reliable digital resistive switching performance, including a uniform switching voltage, stable retention time, and robust on/off ratio. Simultaneously, the conductance-modulation capabilities along with biological synaptic behaviors such as short/long-term plasticity are fulfilled in this memristor. Moreover, a three-layer memristor-based neuromorphic network is constructed to perform pattern recognition and achieves a high accuracy of more than 92.2 percent. Dissolution and cell toxicity tests demonstrate the degradable and biocompatible characteristics of the memristor. This work may provide a feasible strategy to integrate information processing and data storage into one biomemristor and pave the way for innovating artificial synapses in bioelectronics applications.
研究领域:
生物医学工程
·
神经形态计算
·
材料科学
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）