SEPARATION AND PURIFICATION TECHNOLOGY
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2025
·
IF 9
Shizhe Chen,Weinan Dong,Weisong Zhao,Wen Qiang,Xiangxiang Chen,Bao Guo,Kaixi Jiang
Germanium is one of the strategic scattering metals, and recovering a minor concentration of scattering metals from zinc concentrate’s leaching solution is an essential resource worldwide. Practically, neutralizing precipitation and the subsequent dissolution are implemented to enrich scattering metals from zinc leaching solution, facilitating further extraction of Ge and others. Silicon poses significant challenges to the efficient extraction of Ge due to their similar chemical property and the inert nature of silica. However, the evolution of the Ge occurrence state, especially its relationship with Si, during the precipitation and dissolution process in zinc hydrometallurgy is unclear, and there is a lack of an effective method to separate Si/Ge. This paper started with a detailed characterization and leaching behavior of Ge-enriched residue obtained from the plant, followed by a systematic investigation of Ge behavior in synthetic Si/Ge binary and Fe/Si/Ge ternary systems. Eventually, options for Ge enrichment from zinc leaching solution and Si/Ge separation are recommended, providing a practical framework for mitigating the negative influence of Si on the extraction of Ge in zinc hydrometallurgy. The significant findings are that Ge/Si are both presumably co-adsorbed by Fe(OH) 3 colloids upon neutralization to pH 5 of zinc leaching solution, which could be acid redissolved at the unrealistically high liquid-to-solid ratio of 200/1 at the practically meaningful liquid-to-solid ratio of 5/1, Si concentration is high enough to quickly condense and polymerize, resulting the formation of silica precipitate and permanent encapsulating of Ge into silica; interestingly, the Si-O-Ge bonding becomes weakened with pH increasing up to alkaline region and Ge leaching rate exceeding 80% at pH 10, effectively separating Ge from SiO 2 .
研究领域:
冶金学
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材料科学
✓ 已验证
产品关联
DOI
高影响因子
CHEMISTRY-A EUROPEAN JOURNAL
·
2015
·Vol. 21
·期 27
·9809-9815
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IF 5.731
Shang-Xiong Huang-Fu ,Jin-Ni Shen ,Hua Lin,Ling Chen,Li-Ming Wu
Graphical 72-Atom supercubooctahedron : A novel type of supertetrahedral connectivity is exhibited by the 72-atom discrete supercubooctahedron in (Cs 6 Cl) 2 Cs 5 [Ga 15 Ge 9 Se 48 ] (see figure), which undergoes both cation and anion exchange. Electronic-structure studies help to understand the Ge/Ga distribution, and the band structure is studied theoretically. A novel type of supertetrahedral connectivity is exhibited by the 72-atom discrete supercubooctahedron in (Cs 6 Cl) 2 Cs 5 [Ga 15 Ge 9 Se 48 ] ( 1 ), which undergoes both cation and anion exchange, as revealed by unambiguous single-crystal X-ray diffraction data. Electronic-structure studies helped to understand the Ge/Ga distribution.
研究领域:
材料科学
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化学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Optical Materials Express
·
2018
·Vol. 8
·期 7
·1754-1761
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IF 2.566
Yantao Xu,Xusheng Xiao,Xiaoxia Cui,Fei Gao,Jian Cui,Xiaogang Liu,Haitao Guo,Jiangbo She,Gang Chen,Min Lu,Bo Peng
The diamagnetic performance of GeS2-Ga2S3 and GeS2-Ga2S3-PbI2 chalcogenide glasses were investigated, and the composition, wavelength and temperature dependences of the Verdet constant were discussed in detail. It indicates that the contributions to the Verdet constant for each kind of ion are in the order of VPb>VGa>VGe in these chalcogenide glasses, and the Becquerel rule is proved to be an effective guidance for predicting the Verdet constant value. A large Verdet constant is obtained in 68GeS2·17Ga2S3·15PbI2 composition glass and the value is 0.230 min·G−1·cm−1 at 635nm, which is greatly larger than those of commercial diamagnetic glasses. Besides, the temperature coefficient of Verdet constant can be regarded as a constant between 278 and 368 K, indicating these chalcogenide glasses are good candidates for magneto-optical devices in temperature instability conditions.
研究领域:
材料科学
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光学
✓ 已验证
产品关联
DOI
高影响因子
SEPARATION AND PURIFICATION TECHNOLOGY
·
2023
·
IF 8.6
Zidong Tan,Xin Jin,Yong Zhen,Chang Wei,Xingbin Li,Zhigan Deng,Minting Li
Selective extraction of indium and germanium from natural resources due to their important role in high-tech fields is attracting more and more attention. In this paper, indium and germanium were recovered from In-Ge residue leaching solution by the selective solvent extraction of indium with D2EHPA and the precipitation of germanium using tannin. This process included two main stages: indium-selective solvent extraction and germanium-selective precipitation. In the first stage, indium was extracted by using an organic phase containing 15% D2EHPA and 85% kerosene. The indium-loaded organic phase was washed with 0.5 M H 2 SO 4 and then stripped by 4 M HCl solution to obtain an indium extraction ratio of 99% and a stripping ratio of 98.3%. In the second stage, the pH of the raffinate was adjusted to 3.5–4.0 with ZnO dust and then mixed with tannin. Germanium (99%) was selectively precipitated as a tannin-germanium complex. The washed tannin-germanium complex was baked at 500 °C for 3 h to produce a germanium concentrate. By studying the separation coefficients of indium, germanium, and zinc (1994 and 1093, respectively), and controlling the reaction conditions, the maximum separation of indium, germanium, and zinc was obtained. The extraction mechanism of indium from sulfuric acid solution by D2EHPA and element migration during the precipitation of germanium using tannin were also studied. This proposed process flow can be used to selectively recover germanium and indium from In-Ge residue leaching solutions.
研究领域:
冶金学
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材料科学
✓ 已验证
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2020
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IF 8.758
Chao Liu,Yan-Qing He,Li Deng,Jun-Tao Li,Shi-Gang Sun,Xiao-Cun Liu,Wen-Jie Tan,Bo Li,Sheng-Qing Xia
Germanium nanomaterials are important for their potential applications in many fields. However, current synthetic technologies usually involve either high-cost explosive reagents or complicated facilities, which make the mass production especially challenging. In this report, a method was developed to synthesize nano-Ge materials conveniently, realized by decomposing LiZnGe in air at room temperature. The process is nontoxic, inexpensive, and, most of all, very suitable for large-scale production in combination with ball milling. The as-prepared Ge nanomaterials are crystalline whose structures can be flexibly tuned through the ball milling syntheses. As the lithium-ion battery anode, such Ge nanomaterials exhibited long-term cycle ability with high specific capacity as well as excellent rate performance. These results not only provided a very efficient way to prepare nano-Ge in lab or even promising industry production but also suggested a universal method in synthesizing the tetrels elemental nanomaterials.
研究领域:
材料科学
·
能源存储
✓ 已验证
产品关联
DOI
PubMed
高影响因子
COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS
·
2024
·
IF 4.9
Hanjun Wu,Lan Hu,Zhenyue Zhang,Wenda Guo,Wendou Chen,Junxia Yu,Guoqing Feng,Ruan Chi,Zhiquan Pan
In this study, a novel trihydroxyl functionalized titanium dioxide (TiO 2 -NH 2 -3OH) was successfully synthesized by the Schiff base reaction method. TiO 2 -NH 2 -3OH was characterized by Scanning Electron Microscopy (SEM), Fourier Transform Infrared Spectroscopy (FT-IR), x-ray Photoelectron Spectroscopy (XPS), x-ray diffraction techniques (XRD), and further applied to recover germanium (Ge(IV)) from coal acid leaching solution. TiO 2 -NH 2 -3OH exhibited superior capture performance on Ge(IV) at a pH of 3, and the optimal TiO 2 -NH 2 -3OH dosages were 0.8 g L −1 . The distribution coefficients of germanium for coexisting metal ions (Zn 2+ , Co 2+ , Mn 2+ , Ni 2+ and Al 3+ ) were all greater than 1, indicating that TiO 2 -NH 2 -3OH had good selective adsorption performance for Ge(IV) in complex solution environments. Compared with other kinetic models, pseudo-second-order model was more suitable to reveal the absorption of Ge(IV). Moreover, the experiment data were fitted better with Langmuir model at 298 K than the other isothermal models, and the maximum adsorption capacity was up to 72.94 mg g −1 . Thermodynamic data suggesting that the capture of Ge(IV) on TiO 2 -NH 2 -3OH was a spontaneous endothermic process, increasing the temperature was beneficial for the adsorption reaction to proceed. TiO 2 -NH 2 -3OH with saturated adsorption still maintained a high removal rate of 80.55 % of Ge(IV) after five cycles, indicating good stability and recyclability of TiO 2 -NH 2 -3OH. XPS analysis indicated that the capture of germanium by TiO 2 -NH 2 -3OH may be due to the ion exchange interaction between -OH and Ge(OH) 4 on the adsorbent surface. This work indicated that TiO 2 -NH 2 -3OH had great advantages and potential for the recovery of Ge(IV) from coal acid leaching solution.
研究领域:
化学工程
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材料科学
✓ 已验证
产品关联
DOI
高影响因子
Advanced Electronic Materials
·
2022
·Vol. 8
·期 12
·2200620
·
IF 7.633
Guoliang Xiong,Gang Zhang,Xiaozhan Yang,Wenlin Feng
A novel 2D layered material Ti 3 C 2 T x (MXene) is favored by researchers in the application field of optoelectronics due to its tunable work function, great light transmittance, and excellent electrical conductivity. In this work, Ti 3 C 2 T x /n-germanium (MXene/n-Ge) Schottky heterostructures are fabricated and investigated. Schottky contacts of MXene with n-Ge are identified by ultraviolet photoelectron spectroscopy (UPS). Based on the MXene/n-Ge Schottky junctions, an ultrafast, broadband, and self-powered photodetector is demonstrated and studied. The MXene/n-Ge device exhibits excellent photoresponse from ultraviolet to near-infrared light illumination. In particular, it shows an excellent on/off ratio (≈10 4 ), a high responsivity (3.14 A/W), a larger specific detectivity (2.14 × 10 11 Jones), and an ultrafast response speed (t rise of 1.4 µs and t decay of 4.1 µs). Moreover, the MXene/n-Ge Schottky heterostructure photodetector also shows excellent low-temperature work characteristics of 73 K. It is believed that this work will attract more researchers’ attention to MXene in the field of optoelectronic devices.
研究领域:
材料科学
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光电设备
·
半导体物理
✓ 已验证
DOI
高影响因子
Journal of Physical Chemistry C
·
2016
·
IF 4.509
Fei Li,Zhiguo Xia,Quanlin Liu
Controlled synthesis of absorber materials Cu2ZnGeS4 (CZGS) has been performed using different Ge precursors, including GeCl4 and the self-synthesized Ge complexes with Ge-glycolic acid (denoted as Ge-Gly), Ge-tartaric acid (denoted as Ge-Tar), and Ge-citric acid (denoted as Ge-Cit). The grain size of as-prepared CZGS nanocrystals (NCs) is dependent on the Ge precursors. All four Ge precursors enabled the wurtzstannite CZGS phase formation. The Ge-Cit precursor led to the formation of monodispersed NCs owing to the fact that the undissolved metal-Cit complex in OLA absorbed the small CZSG NCs and avoided the irregular crystalline behavior. The other three precursors induced two different sizes, and the corresponding reaction mechanism has been proposed. Moreover, the Cu2ZnGe1–xSnxS4 NCs with different Ge/Sn ratios were prepared using the Ge-Cit precursor, verifying the general effect on the phase formation and selective grain sizes. The compositional effect on the band gap variation and morphologies of Cu2ZnGe1–xSnxS4 was also studied.
研究领域:
材料科学
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化学合成
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF APPLIED PHYSICS
·
2017
·Vol. 121
·期 12
·
IF 2.068
Wu Lei,Dai LiDong,Li HePing,Hu Haiying,Zhuang YuKai,Liu KaiXiang
We present a pressure-induced amorphization for pure and 0.5 mol. % Bi 3+ -doped Zn 2 GeO 4 samples, measured by high pressure Raman spectroscopy and high resolution transmission electron microscopy. Pressure-induced conductivity switching phenomena were discovered for both samples at around ∼7.01 GPa and ∼11.11 GPa, respectively, which closely correlated with the crystalline-to-amorphous transformation. The detailed conduction mechanism and the defect reaction process at high pressure indicate that the application of pressure could efficiently manipulate the microstructure and electrical performance of rare-earth doped polycrystalline materials, and therefore holds great promise for numerous applications in the future.
研究领域:
材料科学
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物理学
✓ 已验证
产品关联
DOI
高影响因子
Journal of Cleaner Production
·
2022
·
IF 11.072
Tao Jiang,Pengcheng Wang,Tao Zhang,Deqing Zhu,Zhihong Liu
Owning to the lack of commercial independent germanium deposit and the ever-growing germanium demand of high-tech field, the recovery of germanium from various resources shows strategic significance. In this study, a novel solvent extraction system based on primary amine (N1923) and hydroxycitric acid (HCA) was developed to recover germanium from leaching liquors of secondary zinc oxide and some typical resources. The results indicated that the solvent system showed high extraction efficiency and germanium selectivity ; equilibrium pH and the dosage of HCA were the key parameters for germanium recovery, the germanium extraction capacity of an organic phase with 0.24 mol/L N1923 was 7.97 g/L; germanium could be separated from zinc, arsenic, iron, and cadmium at an equilibrium pH of 1.0, and the separation factors of germanium to those elements were up to 1778, 232, 67074, and 14706, respectively; the system was also with well separation performance of germanium from typical germanium containing leachates of copper cake and coal fly ash. Stoichiometry analysis and FT-IR, NMR, and ESI-MS spectra demonstrated that the extraction of germanium followed a coordination anion extraction mechanism, the germanium extraction complexes was RNH 3 ⋅GeO 2 C 6 H 4 O 7 . 0.5 mol/L NaOH can be selected for the stripping of germanium. 2
研究领域:
冶金学
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材料科学
✓ 已验证
产品关联
DOI
高影响因子
Journal of Environmental Chemical Engineering
·
2023
·
IF 7.7
Cheng Huang,Kun Li,Hong Zhang,Wenwen Zhang,Yanlin Sun,Shujie Xing,Ying Shao,Jing Zhu,Yalan Chen,Long Chen
In this study, a solid adsorbent based on Chinese gallotannin and chitosan was generated and applied to adsorb rare and scattered metals, including Ge (Ⅳ), Ga (Ⅲ), and In (Ⅲ), from simulated zinc plant leachates. Fourier-transform infrared spectroscopy (FTIR) and solid state nuclear magnetic resonance (SSNMR) were performed to characterize the grafting way of Chinese gallotannin on the chitosan matrix. It was clearly showed that Chinese gallotannin was immobilized on the chitosan by Schiff-base condensation and phenol-formaldehyde reaction at the molar ratio of glutaraldehyde to tannin of 2:1. And the amount of chitosan amino groups was ten times that of tannin, with an initial pH of 4. The adsorption experiments showed that an appropriate increase in pH was more beneficial to enhance the adsorption capacity of immobilized Chinese gallotannin (ICGT). At a temperature exceeding 30 °C, the immobilized tannin became less sensitive to temperature. Adsorption kinetics studies showed that the adsorption of the three scattered metals by ICGT followed a quasi-second-order kinetic equation , with chemisorption as the mechanism. The adsorption isotherm was well fitted by the Langmuir model, indicating uniform adsorption sites on the surface of ICGT. The adsorption capacities of Ge (Ⅳ), Ga (Ⅲ), and In (Ⅲ) in solution by the adsorption model of monolayer were 61.39 mg/g, 63.82 mg/g, and 59.92 mg/g, respectively. Mechanical property and stability tests showed that ICGT had good resistance to harsh adsorption conditions of scattered metal ions .
研究领域:
材料科学
·
环境科学
·
化学工程
✓ 已验证
产品关联
DOI
高影响因子
Journal of Energy Chemistry
·
2019
·
IF 5.162
Mingtao Yan,Huiyuan Geng,Peng Jiang,Xinhe Bao
Thermoelectric properties of orthorhombic or rhombohedral GeSe have attracted great attention recently, with the rise of its structural analog SnSe. However, the p -type cubic GeSe with higher symmetry and higher valence band degeneracy, which might exhibit higher thermoelectric performance, has never been synthesized. Here we report on the successful synthesis of p -type crystalline cubic GeSe by alloying with Sb 2 Te 3 and the spontaneously formed Ge-vacancies. An unexpected glass-like temperature independent lattice thermal conductivity is observed in crystalline cubic GeSe, which results from strong phonon scattering by vacancy-induced disorders. Combining the multiple scattering theory and chemical bond analysis, we further reveal the existence of Anderson localization induced by Ge-vacancies. The Anderson localization results in a nearly constant Seebeck coefficient with increasing the carrier concentration. These results provide a general insight towards understanding and improving the thermoelectric properties of thermoelectric materials with vacancies and atomic-scale disorders.
研究领域:
材料科学
·
凝聚态物理
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）