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PbSe
CRYSTENGCOMM · 2012 ·Vol. 14 ·期 20 ·7049-7054 · IF 3.842

A facile solution route for the synthesis of PbSe–Au nanocomposites with different morphologies

Weiwei Hu,Hui Liu,Feng Ye,Yulong Ding,Jun Yang

A key frontier in nanomaterial fabrication is the integration of different materials within the same structure as a means to increase functionality. Herein, a facile solution route for the synthesis of nanocomposites consisting of PbSe and gold is reported. It has been found that the molar ratio of PbSe/Au has great influence on the morphologies of the PbSe–Au nanocomposites. The evolution from nanocomposites with multiple Au deposition on the particle surface to those with a single Au domain, and further to pineapple-like morphologies has been illustrated by increasing the molar ratio of Au/PbSe during the synthesis. Surprisingly, the experimental observations show that the growth of Au on the surface of PbSe has an upper limit size. Upon the achievement of this size, addition of more Au precursors only results in the deposition of Au on extra sites over the surface of PbSe instead of continuous growth of the Au domain, termed ‘pineapple-like’ nanocomposites. This thereby extends an opportunity for the fabrication and control of nanostructures, in particular for nanocrystals composed of different materials.

研究领域: 材料科学 · 纳米技术
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Journal of Physical Chemistry C · 2015 · IF 4.772

Utilizing Sn Precursor To Promote the Nucleation of PbSe Quantum Dots with in Situ Halide Passivation

Zhong Zhang,Chao Liu,Xiujian Zhao

The lead chalcogenide quantum dots with a size smaller than 3 nm and good chemical stability were difficult to synthesize due to the poor chemical reactivity of commonly used phosphine-free chalcogen and lead sources. Here we report the synthesis of small and surface passivated PbSe quantum dots (QDs) by addition of SnCl2 as the nucleation promoting agent and PbCl2 as the in situ passivation agent. Common PbCl2 (dissolved in oleylamine, oleic acid, and 1-octadecene) and elemental Se (dissolved in oleylamine) were used to synthesize small PbSe QDs by addition of SnCl2 to promote the fast nucleation of PbSe nanocrystals. The sizes of the PbSe QDs are between 3 and 8 nm and are tunable by controlling the ratio of PbCl2/SnCl2 and the reaction time. High photostability of PbSe QDs approved by the XPS analysis and photoluminescence spectra of PbSe QDs was also achieved by the in situ formation of thin halide adlayers on the surface of QDs. This new method is green with accessible raw materials and simple in situ passivation scheme and will enable the broader utilization of PbSe QDs in ambient conditions in many optoelectronic applications.

CAS / MDL: 112-90-3 112-88-9
研究领域: 材料科学 · 纳米技术 · 化学工程
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Journal of Science-Advanced Materials and Devices · 2021 · IF 5.469

Large-scale preparation of ultra-long ZnSe–PbSe heterojunction nanowires for flexible broadband photodetectors

Jianping Deng,Wenlei Lv,Pengchao Zhang,Wendeng Huang

Flexible photodetectors show great applications in wearable electronics such as health monitoring and the Internet of Things. In this study, we have prepared ultralong ZnSe–PbSe heterojunction nanowires with a length of 20 μm in gram-scale by an in-situ cation exchange reaction. The produced PbSe nanoparticles on the ZnSe nanowire configuration are close to an ideal heterojunction system due to the small lattice mismatch of 7.4% in the (111) direction. The Ohmic contact is formed for nanowire photodetectors. The ZnSe–PbSe heterojunction nanowire photodetector exhibits a broadband photoresponse with the peak responsivity of 40 A W −1 while the ZnSe nanowire photodetector shows a narrowband photoresponse of 5 A W −1 , as a result of its extended absorption across the entire UV-visible-NIR. Electrons are transported from PbSe to ZnSe while holes are trapped at PbSe, and electrons are extracted to an external circuit by an Al electrode, resulting in a high gain of the photoconductor. The broadband photoresponse, the large linear dynamic range of 66 dB, the fast response speed of 0.02 s and the protracted cycle of 5000 show the feasibility of the flexible heterojunction photodetector.

研究领域: 材料科学 · 光电子学
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Frontiers of Optoelectronics · 2023 ·Vol. 16 ·期 1 ·1-11 · IF 5.4

Fluoride passivation of ZnO electron transport layers for efficient PbSe colloidal quantum dot photovoltaics

He Jungang,Ge You,Wang Ya,Yuan Mohan,Xia Hang,Zhang Xingchen,Chen Xiao,Wang Xia,Zhou Xianchang,Li Kanghua,Chen Chao,Tang Jiang

Lead selenide (PbSe) colloidal quantum dots (CQDs) are suitable for the development of the next-generation of photovoltaics (PVs) because of efficient multiple-exciton generation and strong charge coupling ability. To date, the reported high-efficient PbSe CQD PVs use spin-coated zinc oxide (ZnO) as the electron transport layer (ETL). However, it is found that the surface defects of ZnO present a difficulty in completion of passivation, and this impedes the continuous progress of devices. To address this disadvantage, fluoride (F) anions are employed for the surface passivation of ZnO through a chemical bath deposition method (CBD). The F-passivated ZnO ETL possesses decreased densities of oxygen vacancy and a favorable band alignment. Benefiting from these improvements, PbSe CQD PVs report an efficiency of 10.04%, comparatively 9.4% higher than that of devices using sol-gel (SG) ZnO as ETL. We are optimistic that this interface passivation strategy has great potential in the development of solution-processed CQD optoelectronic devices. Graphical Abstract

研究领域: 材料科学 · 光电化学
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CHEMISTRY OF MATERIALS · 2020 · IF 9.567

Colloidal Synthesis of Giant Shell PbSe-Based Core/Shell Quantum Dots in Polar Solvent: Cation Exchange versus Epitaxial Growth

Dong Li,Xiaoli Zhang,Muhammad Ramzan,Kai Gu,Yu Chen,Jiatao Zhang,Bingsuo Zou,Haizheng Zhong

Shell thickness control of core/shell quantum dots (QDs) plays an important role in determining their optical properties as well as the corresponding device performance. PbSe-based core/shell QDs are attractive near-infrared (NIR) light emitters for photonic and optoelectronic applications. We herein report the colloidal synthesis of giant shell PbSe-based core/shell QDs through controllable reactions between preformed PbSe QDs and Cd2+ ions in polar solvents. The preformed PbSe QDs experienced cation-exchange reaction in N,N-dimethylformamide (DMF), while they underwent epitaxial growth of CdS shell in dimethyl sulfoxide (DMSO). The cation exchange of preformed PbSe QDs in DMF result in PbSe/CdSe core/shell QDs with similar size (ca. 6.3 nm) but tunable shell thickness from 0.5 to 2.9 nm. In comparison, the epitaxial growth of preformed PbSe QDs in DMSO produce PbSe/CdS core/shell QDs in DMSO with average core size of ∼5.7 nm but tunable shell thickness from 0.5 to 3.1 nm. These resulting PbSe-based core/shell QDs show tunable photoluminescence emission of 1393–1744 nm for PbSe/CdSe core/shell QDs and 1566–1719 nm for PbSe/CdS core/shell QDs. The cation exchange and epitaxial growth reactions of preformed PbSe QDs were further investigated by comparing the interactions between solvents and cation ions through nuclear magnetic resonance (NMR) measurements. The interactions between Cd2+ and DMSO are stronger than that of DMF, while the interactions between Pb2+ and DMSO are weaker than that of DMF. The difference accounts for the reaction transition from cation exchange to epitaxial growth, providing alternative route for fabricating shell controllable PbSe-based core/shell QDs.

研究领域: 材料科学 · 纳米技术 · 光学
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JOURNAL OF ALLOYS AND COMPOUNDS · 2025 · IF 6.3

Enhanced thermoelectric performance in n-type PbSe via coherent interface through Cu2S alloying

Pengli Si,Xinxin Wang,Yajing Wang,Guangmeng You,Xueke Gu,Zheng Jiang,Jingdan Lei,Chao Wang

N-type PbSe-based materials have emerged as a research focus in medium-to-high temperature thermoelectric applications due to their high carrier mobility, stability across wide temperature ranges, and cost-effectiveness. However, simultaneously maintaining high carrier mobility while reducing lattice thermal conductivity remains a critical challenge for PbSe-based materials. Research demonstrates that constructing coherent interfaces optimizes charge carrier scattering, thereby maintaining high carrier mobility while achieving thermal conductivity reduction. In this work, after Cu 2 S alloying treatment, coherent nanostructured precipitates consisting of Cu 2 S (monoclinic phase) and PbS (cubic phase) are formed at grain boundaries. The lattice mismatch at the interface is maintained below 4.5%, which consequently leads to only a marginal reduction in charge carrier mobility. Meanwhile, Cu 2 S, as a dynamic electron donor, increases the carrier concentration. Additionally, the diffusion of Cu + ions introduces lattice disorder, which, in combination with the low- to mid-frequency phonon scattering from the nano-precipitates, significantly reduces the lattice thermal conductivity. As a result, a ZT value of 1.53 is achieved at 773 K. The Pb 1.02 Se-0.5% Cu 2 S composite prepared in this study exhibits superior thermoelectric performance compared to most n-type PbSe-based materials, demonstrating that the introduction of coherent nanostructures constitutes an effective strategy for enhancing the thermoelectric properties of n-type PbSe.

CAS / MDL: 7782-49-2
研究领域: 材料科学 · 热电材料 · 凝聚态物理 · 半导体材料 · 能源材料
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Small · 2025 ·Vol. 21 ·期 27 ·2412833 · IF 12.1

Orbital Splitting and Interstitial Doping Lead to High Thermoelectric Performance in n-type PbSe

Deshang Xiang,Yaru Gong,Chen Chen,Rongxin Sun,Song Zhao,Yuqi Liu,Qingyang Jian,Yanan Li,Wei Dou,Di Li,Pan Ying,Guodong Tang

PbSe has garnered significant attention due to its earth-abundance and low cost of Se element. Here the synthesis of Zn and Sn co-doped n -type PbSe with noteworthy thermoelectric performance enhancement is reported. Microstructural characterization and first-principles calculations demonstrate that Zn occupies the interstitial site between Se tetrahedra in PbSe, thereby creating a high-density network of needle-like defects that induces lattice strain and reduces the lattice thermal conductivity. Zn interstitial doping provides additional free electrons, leading to sharp increase of carrier concentration. DFT calculation reveals that orbital splitting of VBM boosts carrier mobility of PbSe. The significantly enhanced carrier mobility produces high power factor in the whole temperature range. As a result, a high peak ZT of 1.7 is realized for Zn and Sn co-doped n -type PbSe with a remarkable average ZT of 1.2 over the temperature range of 423–873K. These findings demonstrate that combining orbital splitting and interstitial doping is an effective strategy to synergistically optimize the electrical-thermal transport of n -type PbSe, making it a promising candidate for energy conversion applications.

研究领域: 材料科学 · 凝聚态物理 · 能源材料 · 热电转换 · 半导体物理
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INFRARED PHYSICS & TECHNOLOGY · 2023 · IF 3.3

Enhancement of mid-infrared saturable absorption of graphene by compositing with PbSe for ultra-short pulse lasers in the ∼ 2.8 to ∼ 4 μm band

Zhenni Ou,Xiaoyu Wang,Baohua Zhu,Dunlu Sun,Tinglun Xing,Yuzong Gu

The suitably large modulation depth of the saturable absorber (SA) is crucial to obtaining short pulse lasers via passive Q-switching or mode-locking techniques. Graphene could theoretically be used as a mid-infrared (mid-IR) SA due to its zero band-gap. However, the low modulation depth of graphene in the mid-IR region limits its applications. In this work, to improve the mid-IR modulation depth of graphene, a strategy of functionalizing graphene with narrow-band gap semiconductors was adopted. Graphene/PbSe (G/PbSe) composite was synthesized by a facile hydrothermal process and the reflective G/PbSe SA was prepared by spin-coating method. The saturation absorption properties were investigated by the open aperture Z-scan technique. The results indicated that the saturation absorption properties of G/PbSe SA were largely enhanced, and the modulation depth was increased from 3.02 % to 5.4 % at ∼ 2.8 μm and from 2.5 % to 6.4 % at ∼ 4 μm compared with pure graphene. Moreover, with the as-prepared reflective G/PbSe SA, passively Q-switched Er:YAP laser operation at ∼ 2.8 µm was realized. At the pump power of 6.78 W, the pulse train with pulse width of 326 ns and repetition rate of 107 kHz was obtained, and the average output power was 498 mW. This study presents a way for preparing graphene-based mid-IR SAs for short pulse mid-IR lasers.

研究领域: 光学材料 · 激光技术
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Small · 2024 ·Vol. 20 ·期 45 ·2403852 · IF 13

Enhanced Thermoelectric Performance of N-Type PbSe Through Semi-Coherent Nanostructure by AgCuTe Alloying

Xinxin Wang,Chao Wang,Yajing Wang,Min Hao,Shengqiang Cui,Xudong Huang,Chunhui Wang,Jing Chen,Zhenxiang Cheng,Jianli Wang

N-type PbSe thermoelectric materials encounter challenges in improving the power factor due to the single-band structure near the Fermi level, which obstructs typical band convergence. The primary strategy for enhancing the thermoelectric figure of merit (ZT) for n-type PbSe involves reducing lattice thermal conductivity (κ lat ) by introducing various defect structures. However, lattice mismatches resulting from internal defects within the matrix can diminish carrier mobility, thereby affecting electrical transport properties. In this study, n-type AgCuTe-alloyed PbSe systems achieve a peak ZT value of ≈1.5 at 773 K. Transmission electron microscopy reveals nanoprecipitates of Ag 2 Te, the room temperature second phase of AgCuTe, within the PbSe matrix. Meanwhile, a unique semi-coherent phase boundary is observed between the PbSe matrix and the Ag 2 Te nanoprecipitates. This semi-coherent phase interface effectively scatters low-frequency phonons while minimizing damage to carrier mobility. Additionally, the dynamic doping effect of Cu atoms from the decomposition of AgCuTe within the matrix further optimize the high-temperature thermoelectric performance. Overall, these factors significantly enhance the ZT across the whole temperature range. The ZT value of ≈1.5 indicates high competitiveness compared to the latest reported n-type PbSe materials, suggesting that these findings hold promise for advancing the development of efficient thermoelectric systems.

研究领域: 材料科学 · 凝聚态物理 · 能源材料 · 纳米结构工程 · 热电转换
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Nano Research · 2021 ·Vol. 14 ·期 10 ·3386-3394 · IF 8.897

Unconventionally anisotropic growth of PbSe nanorods: Controllable fabrication under solution-solid-solid regime over Ag2Se catalysis for broadband photodetection

You Su,Zhang Li,Yang Qing

Broadband optoelectronic devices intrigue enormous interests on account of their promising potential in optical communications, sensors and environmental monitoring. PbSe nanocrystals are promising candidates for the construction of next-generation photodetectors due to their fascinating intrinsic properties and solution-processed compatibility with varied substrates. Here, we report the fabrication of a broadband photodetector on the basis of high-quality solution-processed PbSe nanorods in rock-salt phase grown along unconventionally anisotropic growth direction of <112> zone axis. The rock-salt PbSe nanorods are synthesized in solution phase over the catalysis of Ag 2 Se with relatively high-temperature body-centered cubic phase via a solution-solid-solid growth regime using oleylamine and oleic acid as solvents and stabilizer surfactants, from which the PbSe nanorods with the unconventionally anisotropic growth direction are controllably grown in size and shape in the synthetic procedure typically with about 17 nm in diameter and 58 nm in length on average. Meanwhile, the PbSe nanorods-based photodetector exhibits a broadband response from 405 to 1,064 nm with a high responsivity of 0.78 A·W −1 and a fast response time of 17.5 µs. The response time is much faster in comparison with most of the PbSe-based photodetectors with response time in millisecond level.

研究领域: 材料科学 · 光电探测器领域
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Nanoscale Horizons · 2025 · IF 6.6

Two-step ligand exchange to promote charge transfer in PbSe quantum dot photodetectors for pulse monitoring

Jingwen Yang,Zaihua Duan,Wenxin Zeng,Yichen Bu,Xing Tang,Guosheng Wang,Xin Zhou,Qian Dai,Zhen Yuan,Yadong Jiang,Huiling Tai

Quantum dots (QDs) have emerged as promising materials for next-generation infrared semiconductors due to their facile solution processing, low-cost, tunable bandgap and superior optoelectronic properties. However, organic long-chain ligands that modify the surface of QDs hinder charge transfer, thus impairing the performance of QD infrared photodetectors. Here, we report a two-step ligand exchange strategy that decouples the native long-chain ligands from the QDs using specific molecules and then attaches the short-chain ligands, resulting in high response for lead-rich lead selenide (PbSe) QD photodetectors. During the layer-by-layer film deposition process, 1-octanethiol is first used for primary ligand exchange to remove stable ligands, followed by 3-mercaptopropionic acid for secondary exchange to ensure thorough passivation of surface defects. The two-step processing PbSe QD photodetector has a responsivity of up to 1.28 A W−1, a detectivity of 9.65 × 1012 Jones and a record high external quantum efficiency of 144.4% at a bias voltage of 0.5 V at 1100 nm. Benefitting from the high performance, the PbSe QD photodetector can be integrated into a pulse monitoring platform, achieving a physiological sign monitoring by capturing real-time pulse signals of human superficial arteries.

研究领域: 纳米技术 · 光电子学 · 材料科学 · 生物医学工程 · 红外探测器
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RSC Advances · 2016 ·Vol. 6 ·期 21 ·17029-17035 · IF 3.289

PbSe quantum dot films with enhanced electron mobility employed in hybrid polymer/nanocrystal solar cells

Xiaoyu Zhang,Yu Zhang,Hua Wu,Long Yan,Zhenguang Wang,Jun Zhao,William W. Yu,Andrey L. Rogach

We explore two strategies to improve the performance of hybrid solar cells fabricated using poly(3-hexylthiophene) (P3HT) and colloidal PbSe nanocrystals, which have reached a 1 sun power conversion efficiency of 2.9%. Using an atomic passivation strategy towards inorganic ligand-capped nanocrystals, the electron mobilities of PbSe quantum dot films are improved from 1.95 × 10−6 cm2 V−1 s−1 to 1.15 × 10−5 cm2 V−1 s−1. Employing ultrasmall PbSe nanocrystals allows us to adjust their bandgaps towards the type II heterojunction with P3HT, thus achieving efficient charge separation and transfer between the polymer/inorganic constituents. The device performance dropped to half after 10 days' storage, and the P3HT/PbSe interface was found to play a primary role in this efficiency degradation.

研究领域: 材料科学 · 纳米科技 · 光伏技术 · 半导体物理 · 表面与界面化学
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