CERAMICS INTERNATIONAL
·
2022
·
IF 5.532
Pengpeng Xu,Junyi Yu,Chaofan Li,Suibin Luo,Shanming Ke,Yangbo Zhou,Shuhui Yu,Rong Sun
Flexible polymer composites with high dielectric constants and low dielectric losses at high frequencies are highly desired in microwave and RF applications. However, a high dielectric constant is often obtained at the expense of flexibility because a high loading of filler is needed. In this work, we synthesize a core-shell structured 1D filler by coating high-dielectric-constant PbTiO 3 onto the surface of low-thermal-expansion-coefficient SiC nanofibers , which are then incorporated into the epoxy matrix together with BaTiO 3 nanoparticles to form the multi-phase BaTiO 3 /SiC@PbTiO 3 /epoxy composite film . A high dielectric constant (35 at 100 Hz and 20 at 5 GHz) and a low dielectric loss (0.023 at 100 Hz and 0.13 at 5 GHz) are achieved as the filling content of SiC@PbTiO 3 and BaTiO 3 is 5.24 wt% and 80 wt%, respectively. Prediction models of the effective dielectric constant of polymer-based composites reveal that a continuous polarization network is constructed in the composites owing to the physical contact between BaTiO 3 and PbTiO 3 . The construction of the multi-phase filler provides a feasible way to effectively adjust and improve the dielectric properties of polymer-based composite films.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2021
·
IF 4.527
Qihuang Deng,Wei Xiong,Bingshuang Mao,Maolin Bo,Yefeng Feng
Increasing the dielectric constant of polymer/sulfide ceramic composites by using wide-bandgap semiconducting sulfide ceramic fillers like ZnS is difficult because of their low interface polarization. To increase the dielectric constant, in this study, ternary polymer-based composite films were designed and fabricated using a hybrid filler consisting of shell-like ZnS particles and core-like V 2 C MXene particles. First, V 2 C MXene with a multi-layered structure was synthesized from the simplest raw materials followed by the in-situ hydrothermal growth of ZnS particles around the V 2 C particles. Then, binary polymer/ZnS and ternary polymer/V 2 C–ZnS composites were fabricated, and their dielectric, conductive, and electrical breakdown properties were investigated. Finally, the effect of interfacial bonding between the V 2 C and ZnS phases was investigated by density functional theory calculations, and the contribution of V 2 C/ZnS interfacial bonding to the higher dielectric constant of the ternary composites than that of the binary composites was explained. The ternary composites exhibited balanced electrical properties suitable for energy storage applications. The ternary composite with 10 wt% hybrid filler loading exhibited a high dielectric constant of ~52, a low dielectric loss of ~0.11 at 100 Hz, and a high electrical breakdown strength of ~202 MV m −1 . This study paves the way for the facile fabrication of high-performance composite dielectrics for application in advanced capacitors.
研究领域:
材料科学
·
电气工程
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2021
·Vol. 32
·期 22
·26359-26370
·
IF 2.478
Wang Yuping,Dong Qing,Shi Shuying,Zhang Xiaoqian,Zhu Ze,Guo Zhenfeng,Chow Yuk Tak,Wang Xinqiang,Zhang Guanghui,Zhu Luyi,Xu Dong
Ba 0.7 Sr 0.29 La 0.01 TiO 3 (BSLT) fibers with good crystallinity were prepared by the electrospinning method, and the flexible BSLT/PVDF composite membranes were prepared by a simple papermaking process. The fiber exhibited good fiber morphology after being heat-treated to 900 °C. The composite membrane showed strong tensile strength and excellent dielectric properties. The tensile strength of the 20% PVDF composite membrane was 2.66 times that of pure BSLT membrane. Fiber membrane after compounding with PVDF maintained high dielectric constant ε r with a small dielectric loss tan δ . It has good frequency stability in the range of 100 Hz to 100 kHz. The dielectric constant of 20% PVDF composite fiber membrane could still reach 49.5 ( f = 1000 Hz). The dielectric constant and dielectric loss maintained good stability in the range of 40 to 160 °C. The dielectric constant and dielectric loss of the prepared fiber membrane possessed more stable temperature stability and frequency stability than those of barium titanate-based/organic polymer membranes prepared by other methods.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ELECTROCERAMICS
·
2023
·Vol. 51
·期 1
·51-58
·
IF 1.7
Zhang Yu,Ma Jianli,Li Chang,Chen Chen,She Yubin
The reaction sintering, without calcination and following re-grinding, has been paid increasing attention. Non - stoichiometric Li 2 Mg 3 Sn 1 − x O 6 ( x = 0.00, 0.02, 0.04, 0.06, 0.08, 0.10) ceramics were successfully gained through reaction sintering process in the study, and its phase composition, morphology and dielectric characteristics were studied. This XRD patterns of Li 2 Mg 3 Sn 1 − x O 6 samples prepared after sintering at 1,305 ℃ for 6 h indicates that green bodies are mainly composed of Li 2 Mg 3 SnO 6 phase, accompanied by the second phase of Mg 2 SnO 4 . A host of pores, elliptic - like grains and wrinkle - like grains were visibly observed from the SEM images of Li 2 Mg 3 Sn 1 − x O 6 ceramics, which is because of the severe volatilization of Li elements at high temperature. The apparent density, relative permittivity, quality factor and temperature coefficient of resonant frequency of samples will be devastate owing to porous morphology and Mg 2 SnO 4 phase to a large extent. Finally, when x = 0.08, Li 2 Mg 3 Sn 0.92 O 6 ceramics have optimal dielectric performances: ε r = 9.133, Q×f = 55,429 GHz, τ f = -36.1 ppm/℃.
研究领域:
材料科学
·
陶瓷工程
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2023
·Vol. 34
·期 2
·1-12
·
IF 2.8
Su Qi,Qu Jing-Jing,Liu Fei,Feng Ai-lin,Yuan Chang-Lai,Liu Xiao,Meng Liu-Fang,Ding Guo-An,Su Ming-wei,Chen Guo-Hua
A series of new systems of the SrCe 1- x Ti x O 3 and SrCe 1− x Zr x O 3 (SCT x and SCZ x , x = 0.0–0.1) ceramics have been prepared by the traditional solid-phase methods. The XRD patterns results show that an ABO 3 -type perovskite structure of the SrCeO 3 ceramic can be obtained as x = 0.0. With the increase in Ti 4+ - and Zr 4+ -ions-doping content of x = 0.02–0.1, the SCT x and SCZ x ceramics basically belong to the perovskite phase with the orthorhombic structure of the space group Pmcn (62), and the results of EDS analysis on the proportion of each element can also verify the correctness of the XRD analytical results. In addition, all the microstructures are dense for the SCT x and SCZ x ( x = 0.0–0.1) samples. The fitting results of complex plane impedance verified that the temperature stability of SCT x solid solution ceramics is more suitable for adjusting to the practical application range. Especially, the SCT x ( x = 0.03) ceramics sintered at 1270 °C for 4 h can obtain the relatively excellent dielectric properties of ε r = 50.16, Q × f = 8,940 GHz (at 5.91 GHz), and τ f = + 0.08 ppm/°C.
研究领域:
材料科学
·
陶瓷工程
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2023
·
IF 6.2
Wenchao Zhang,Liangjun Wang,Shiyu Liu,Feng Guan,Min Jiang,Yanpeng Li,Dong Yue,Jialong Li,Xiaoxu Liu,Yu Feng
It is important that the dielectric material in the electrical system be able to handle the increasing applied electric strength owing to the rising demands for power supply reliability. Based on this, in this work, Nb 2 O 5 donor doped SiO 2 (NSO) particles were synthesized by high-temperature sintering method and successfully doped into the PI matrix. The maximum E b of the composite material is 527.3 kV/mm, which is 64.2% higher than that of pure PI (321.1 kV/mm) and 34.8% higher than that of the SiO 2 /PI composite material (392.5 kV/mm) owning to the effect of donor doping on the carrier transport of the composite material. At the same time, it maintains excellent dielectric stability and lower dielectric loss even at 100 ℃. These consequences offer a new strategy for enhancing the integrated dielectric properties of polymer dielectrics in insulation fields.
研究领域:
材料科学
·
电气工程
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2018
·Vol. 29
·期 23
·20247-20252
·
IF 2.324
Zhang Yun,Ding Shihua,Song Tianxiu,Huang Long,Zhang Xiaoyun
Rutile-structured CoTiNb 2 O 8 ceramics were synthesized via traditional solid-state route. The effects of LiF addition on their sintering behavior, phase composition, microstructure and microwave dielectric properties were investigated systematically in this study. The sintering temperature was successfully lowered to 950 °C by a small amount (1 wt%) of sintering aid. XRD and EDS results indicated that chemical reaction between LiF and host ceramic took place during sintering process. And CoTiNb 2 O 8 with Li 0.8 Co 0.2 Nb 0.96 O 3 second phase coexisted in the entire composition range. The addition of LiF to the CoTiNb 2 O 8 ceramics induced a limited degradation in microwave dielectric properties. The ε r and Q × f values of the low-fired CoTiNb 2 O 8 ceramics ranged from 39.4 to 53.9 and 17,580 GHz to 20,147 GHz, respectively. While the τ f decreased in negative values with increasing LiF content. When sintered at 950 °C, the CoTiNb 2 O 8 ceramic doped with 1 wt% LiF had excellent microwave dielectric properties: ε r = 53.9, Q × f = 20,147 GHz, and τ f = 77.2 ppm/°C, making them promising for LTCC applications.
研究领域:
材料科学
·
电子工程
✓ 已验证
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2021
·
IF 4.527
Kang Du,Chang-Zhi Yin,Yan-Bo Guo,Chao Zhang,Xiao-Chuan Wang,Wen-Zhong Lu,Wen Lei
The CaSnSi 1- x Ge x O 5 (0 ≤ x ≤ 1.0) microwave dielectric ceramics were prepared using traditional solid reaction sintered at 1450 °C-1500 °C for 5 h, and the substitution of Ge 4+ for Si 4+ formed the CaSnSi 1- x Ge x O 5 solid solution at 0 ≤ x ≤ 1.0. The phase transition from monoclinic with A 2/ a space group to triclinic with A 1 ‾ space group at CaSnSi 1- x Ge x O 5 ceramics was clarified by Rietveld refinement and high-resolution transmission electron microscopy/selected area diffraction. The crystal structure, X-ray diffraction patterns , and microwave dielectric properties ( ε r = 11.28, Q × f = 72,900 GHz at 11.62 GHz, and τ f = −62.9 ppm/°C) of novel single-phase CaSnGeO 5 ceramic were initially reported. In single-phase area, the increase in SnO 6 octahedral distortion could reduce the τ f value of CaSnSi 1- x Ge x O 5 ceramics (0 ≤ x ≤ 0.6) to near zero. In multiphase area, the near-zero τ f value (τ f = +5.2 ppm/°C) was obtained at x = 0.7. The remarkable change between +5.2 ppm/°C ( x = 0.7) and −77.8 ppm/°C ( x = 0.8) of τ f value was attributed to the appearance of ε r anomaly peak (T 1 = 125 °C). The optimal microwave dielectric properties ( ε r = 11.70, Q × f = 37,900 GHz at 12.6 GHz, and τ f = +5.2 ppm/°C) of CaSnSi 1- x Ge x O 5 ceramics were obtained at x = 0.7.
研究领域:
材料科学
·
物理学
✓ 已验证
DOI
高影响因子
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
·
2022
·
IF 6.364
Xiaowen Hu,Jinwu Chen,Jie Li,Huaicheng Xiang,Ying Tang,Liang Fang
Two zircon-structured ceramics AEuV 2 O 8 (A = Bi, La) were prepared with optimal sintering temperatures of 900 °C and 1375 °C, respectively. They exhibited sharp contrast performances with medium ε r ∼ 28.7 ± 0.1, Q × f ∼ 14,000 ± 300 GHz, and large positive τ f ∼ 75.7 ± 2.0 ppm/°C for BiEuV 2 O 8 , whereas low ε r ∼ 10.4 ± 0.1 Q × f ∼ 25,100 ± 300 GHz, and negative τ f ∼ − 40.7 ± 2.0 ppm/°C for LaEuV 2 O 8 . The rattling effect at the A-site was more dominant in determining microwave dielectric properties than that of compressed V 5+ at the B-site. It resulted in the higher ε r , lower Q × f and τ ε , and larger τ f of BiEuV 2 O 8 than those of LaEuV 2 O 8 . Besides, their Q × f was related with the relative density, bond valence and FWHM of the B 1 g Raman mode.
研究领域:
材料科学
·
物理学
✓ 已验证
DOI
高影响因子
RSC Advances
·
2016
·Vol. 6
·期 90
·86889-86903
·
IF 3.289
H. L. Pan,Q. Q. Liu,Y. H. Zhang,H. T. Wu
Wolframite structure Zn1−xCoxZrNb2O8 (x = 0, 0.02, 0.04, 0.06, 0.08, 0.10) ceramics were prepared by the conventional solid state method. The crystal structures were studied via X-ray diffraction, and lattice vibrational modes were obtained by Raman spectroscopy. It could be found that all the A-site (Zn2+/Co2+, Zr4+) and B-site (Nb5+) cations were octahedrally coordinated with oxygen anions from the diagrammatic sketch of the crystal structure. Rietveld refinement was used to analyze the crystal structure and the lattice parameters were obtained. Based on the complex chemical bond theory and lattice parameters, intrinsic factors such as the bond ionicity, lattice energy, bond energy and coefficient of thermal expansion were calculated. Based on the results, Nb–O bonds played an important role in affecting the microwave dielectric proprieties of Zn1−xCoxZrNb2O8 ceramics. Co2+ substitution would affect the crystal structure and influence the microwave dielectric properties. The tendency of the dielectric constant (εr) could be predicted by the polarizability and bond ionicity of Nb–O bonds, and the εr showed the same tendency with Raman shifts of Nb–O vibration modes. The variation of the quality factor (Qf) could be explained by the change of the lattice energy of Nb–O bonds and the full width at half maximum (FWHM) values of Nb-site Raman modes. The temperature coefficient of resonant frequency (τf) showed the same tendency with the bond energy, octahedral distortion and bond valence of Nb–O bonds, and the opposite tendency with the thermal expansion coefficient.
研究领域:
材料科学
·
物理学
✓ 已验证
DOI
高影响因子
Crystals
·
2022
·Vol. 12
·期 3
·405
·
IF 2.67
Yun Liu,Binbin Huang,Xiaoyang Chen,Ping Yu
Mg2TiO4-doped Ca0.65Sr0.35Zr0.65Ti0.35O3(CSZT) thin films with different Mg2TiO4concentrations were deposited on the LaNiO3(LNO)/p-Si substrate using radio-frequency magnetron sputtering technology. The dielectric response of the prepared x% Mg2TiO4-CSZT thin films with frequency, voltage, and temperature was systematically studied. The tanδ and leakage current density of CSZT thin films were reduced effectively by introducing Mg2TiO4content. The prepared 6% Mg2TiO4-CSZT thin film, due to its low loss (tanδ ~0.01 at 1 MHz), satisfied temperature stability (TCC ~−68 ppm/°C, from −55 °C to 205 °C), high withstand voltage (>160 V), and small leakage current density (about 3.34 × 10−6A/cm2at operating voltage of 160 V). This may be useful for capacitor materials in the next generation of portable electronic systems.Keywords:linear dielectric thin films;RF magnetron sputtering
研究领域:
材料科学
·
电子工程
✓ 已验证
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2022
·Vol. 33
·期 13
·10183-10193
·
IF 2.779
Zhang Liangbin,Mei Hongrong,Rao Zhenggang,Shu Longlong,Li Chunchun
In this work, a strategy was demonstrated to reduce the sintering temperature of Mg 2 SiO 4 ceramics while keeping the macrostructure unchanged, through an appropriate amount of low melting point Ge substitution for B-site Si. A series of Mg 2 Si 1 − x Ge x O 4 ( x = 0.1–0.4) ceramics were prepared by a solid-state reaction method. Influences of Ge substitution on the sintering behavior, crystal structure, and microwave dielectric properties were studied. By comparison, the Ge-substituted samples could be effectively sintered at relatively lower sintering temperatures (~ 1370 °C), which is more than 100 °C lower than the nominal Mg 2 SiO 4 . In addition, the optimum microwave dielectric performance was achieved in the sample with x = 0.4, with the relative density ~ 97%, the relative dielectric constant ( ε r ) of 7.2, the quality factor ( Q × f ) of 75,794 GHz, and the temperature coefficient of the resonance frequency ( τ f ) of − 41.2 ppm/°C. This compositional regulation provides a paradigm for improving the sintering characteristics of silicate.
研究领域:
材料科学
·
无机化学
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）