Small
·
2021
·Vol. 18
·期 5
·2104401
·
IF 13.281
Cheng-Yi Zhu,Jing-Kai Qin,Pei-Yu Huang,Hai-Lin Sun,Nie-Feng Sun,Yan-Lei Shi,Liang Zhen,Cheng-Yan Xu
2D van der Waals (vdW) semiconductors hold great potentials for more-than-Moore field-effect transistors (FETs), and the efficient utilization of their theoretical performance requires compatible high- k dielectrics to guarantee the high gate coupling efficiency. The deposition of traditional high- k dielectric oxide films on 2D materials usually generates interface concerns, thereby causing the carrier scattering and degeneration of device performance. Here, utilizing a space-confined epitaxy growth approach, the authors successfully obtained air-stable ultrathin indium phosphorus sulfide (In 2 P 3 S 9 ) nanosheets, the thickness of which can be scaled down to monolayer limit ( ≈ 0.69 nm) due to its layered structure. 2D In 2 P 3 S 9 exhibits excellent insulating properties, with a high dielectric constant ( ≈ 24) and large breakdown voltage ( ≈ 8.1 MV cm −1 ) at room temperature. Serving as gate insulator, ultrathin In 2 P 3 S 9 nanosheet can be integrated into MoS 2 FETs with high-quality dielectric/semiconductor interface, thus providing a competitive electrical performance of device with subthreshold swings (SS) down to 88 mV dec −1 and a high ON/OFF ratio of 10 5 . This study proves an important strategy to prepare 2D vdW high- k dielectrics, and greatly facilitates the ongoing research of 2D materials for functional electronics.
研究领域:
材料科学
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电子工程
·
半导体物理
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Journal of Physical Chemistry C
·
2020
·
IF 4.189
Darvaish Khan,Jianxin Zou,Subrata Panda,Wenjiang Ding
Improving desorption kinetics and achieving thermodynamic destabilization of MgH2 is of great importance for its practical applications. In the present study, a MgH2–In composite was synthesized through high-energy ball milling of MgH2 and In, and microstructures; hydrogen ab/desorption properties of the composite were carefully investigated with respect to the identically processed pure MgH2. The thermodynamic destabilization of MgH2 was achieved through reversible phase transformation of Mg(In) solid solution due to the partial solubility of In in Mg lattice (11 atom %), which resulted in lower enthalpy values and reduced desorption temperatures. X-ray diffraction peak analysis revealed the presence of internal stress/strain fields caused by the lattice mismatch between Mg and indium, which could play an important role in improving the desorption properties of the composite. Hydrogen evolution of the MgH2–In composite was directly observed via an in situ high-resolution transmission electron microscope (TEM), which shows the “hydrogen pump” effect of a Mg3In phase which is stable only under a hydrogen environment. The formation mechanism of the Mg3In phase and its role as “hydrogen pump” in the improvements of desorption kinetics are thoroughly discussed based on the TEM observations and density functional theory (DFT) calculations.
研究领域:
材料科学
·
物理化学
✓ 已验证
产品关联
DOI
高影响因子
Nano Research
·
2023
·Vol. 16
·期 7
·10156-10163
·
IF 9.9
Li Haotao,Tian Fengshou,Chen Shuming
The importance of optical resonance in enhancing light outcoupling efficiency (OCE) is frequently overlooked in conventional bottom-emitting quantum-dot light-emitting diodes (QLEDs) due to their weak microcavity effect. Herein, we show that by synergistically optimizing the optical and the electrical performances, QLEDs with efficiency approaching the theoretical limit can be realized. By introducing a high refractive index indium zinc oxide (IZO) electrode and optimizing its thickness, the light OCE is significantly improved and consequently the red QLEDs exhibit an external quantum efficiency (EQE) of 33.2%, which is 1.4-fold higher than that of the reference devices with conventional indium tin oxide (ITO) electrodes. Moreover, with a high refractive index plastic substrate and a microlens array, the EQE can further be improved to a record value of 37.5%. Similar results are obtained in green and blue devices, which show an EQE of 18.8% and 14.4%, respectively. We also predict that the theoretical EQE limit of red, green, and blue QLEDs can reach 35.4%–36.5%, 24.8%–34.0%, and 25.1%–35.8%, respectively, without using any light outcoupling structures. The proposed synergistic optimization strategy enables the efficiencies of red, green, and blue QLEDs to approach their theoretical limits.
研究领域:
光电子学
·
纳米技术
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材料科学
·
固体物理
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显示技术
✓ 已验证
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2023
·Vol. 33
·期 48
·2306668
·
IF 19
Yingqian Cen,Yudi Tu,Jingting Zhu,Yutao Hu,Qiaoyan Hao,Wenjing Zhang
Devices based on 2DMs van der Waals (vdW) heterostructures always compose of multiple contacts. Due to the instability of nanoscale 2DMs and interfaces, these contacts can be affected by the operation-induced photo or thermal effect. They can trigger the evolution of junctions and rearrange the junctions across a device, which are detrimental for applications. Herein, vdW heterostructure of indium selenide (InSe) and black phosphorus (BP) on Au electrodes are investigated to reveal the contact evolution and its relation to device performance. During operation, light irradiation changes the I–V characteristics from symmetry to strong rectification. Photocurrent mapping and Kelvin-probe force microscopy (KPFM) reveal triple junctions in this heterostructure, i.e., Au-InSe junction, InSe homojunction, and InSe-BP heterojunction. The variation of I–V characteristics of vdW heterostructure is ascribed to the evolution of Au-InSe junction from quasi-ohmic junction with a near-zero work function difference ( Δφ ) to a strong Schottky junction ( Δφ = ≈0.27 eV). The stabilized device demonstrates distinguished time-domain response at individual junctions and overall device, indicating the evolution of contacts and the consequent opposite junction directions degrade the overall device performance. This research emphasizes the importance of dealing with heterogeneous contacts and junction directions in designing vdW heterostructure photodetectors.
研究领域:
材料科学
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纳米技术
·
光电器件
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF FOOD COMPOSITION AND ANALYSIS
·
2024
·
IF 4
Congdi Chen,Youyan Liu,Chao Liang,Hongyao Li,Ziyi Wan,Hanyue Xiao,Jiexue Wang,Jun Liu,Guowei Deng,Min Yang
Recently, there has been significant interest in the utilization of indium-doped cadmium sulfide (CdS) for the detection of chloramphenicol (CAP) in food samples due to its exceptional performance. The objective of this research is to develop a simple, rapid, and highly sensitive sensor for CAP detection. CdS possesses remarkable characteristics as a semiconductor material, including a large specific surface area, abundant pore structure, and excellent electrical conductivity. The electrochemical properties of glassy carbon electrodes (GCE) were comprehensively investigated both in their pristine state and when modified with CdS/GCE, CdIn 2 S 4 /GCE, Cd 1.5 In 2 S 4.5 /GCE, and Cd 2 In 2 S 5 /GCE. The surface areas of the modified electrodes CdIn 2 S 4 /GCE, Cd 1.5 In 2 S 4.5 /GCE, and Cd 2 In 2 S 5 /GCE were measured to be 0.08 cm 2 , 0.097 cm 2 , and 0.25 cm 2 , respectively. Five replicate samples using the optimized proportioned electrode Cd 2 In 2 S 5 /GCE resulted in a response error below 5%. These results indicate that the composite demonstrates exceptional conductivity and reproducibility while maintaining satisfactory sensitivity and high specificity. The proposed sensor based on Cd 2 In 2 S 5 /GCE exhibited an impressive dynamic linear range from 10 nmol/L to 20 μmol/L with an exceptionally low detection limit of 3.8 nmol/L and remarkable sensitivity of 0.38 μA μm −1 cm −2 . This sensor successfully quantified CAP in water samples with a satisfactory recovery rate ranging from 99.5% to 100.3%, accompanied by an RSD below 7.6%. Consequently，this developed electrochemical sensor presents itself as the optimal choice for simultaneous determination of CAP in both food and water samples.
研究领域:
食品科学
·
分析化学
✓ 已验证
产品关联
DOI
高影响因子
HYDROMETALLURGY
·
2019
·
IF 3.465
Deliang Luo,Nengwu Zhu,Yao Li,Jiaying Cui,Pingxiao Wu,Jieyuan Wang
The fragile indium supply inspired the development of recycling programs for end-of-life electronics products, especially liquid crystal displays (LCDs). LCDs consume 70% of the total indium resources used in the world today. In this study, a novel fusion of leaching and extraction processes was proposed to recycle indium from waste LCDs using the functionalized ionic liquid betainium bis(trifluoromethylsulfonyl)imide ([Hbet][Tf 2 N]). Under the optimum conditions of 10 mL 50% (v/v) ionic liquid/ascorbic acid, 20 g/L of solid/liquid ratio, and 90 °C operation temperature within 24 h, the indium leaching rate could reach as high as 99.75% and the indium extraction rate could be enriched by 98.63% in the ionic liquid phase after cooling and stratifying. Introducing ascorbic acid into the process in place of deionized water decreased the distribution rate of iron from 59.87% to 8.84% and promoted the separation of indium and iron. Indium in the ionic liquid phase could then be transferred into an indium-rich solution using oxalic acid and retrieve the ionic liquid. The characteristics of the regenerated ionic liquid remained relatively stable for reutilization. Therefore, the proposed fusion of leaching and extraction processes by [Hbet][Tf 2 N] provides an efficient alternative to recycle indium from waste LCDs.
研究领域:
材料科学
·
环境科学
✓ 已验证
DOI
高影响因子
PROCESS SAFETY AND ENVIRONMENTAL PROTECTION
·
2019
·
IF 4.384
Yao Li,Nengwu Zhu,Xiaorong Wei,Jiaying Cui,Pingxiao Wu,Ping Li,Jinhua Wu,Yimin Lin
Recovery of rare metal indium from waste LCD screens is important since its content is about 500 times of the original ore. Oxalic acid has excellent ability to leach indium from waste LCD screens, and how to achieve reactor scale operation is critical to promote indium recovery. In this study, a temperature-controlled aciduric stirred reactor (TCASR) was constructed to investigate the effects of operational conditions on the leaching efficiency of indium at reactor scale. Results showed that complete leaching was achieved in 10 min under the conditions of 0.2 mol/L oxalic acid, 300 g/L of ITO glass powder dosage, 90℃ and 500 rpm of stirring speed. Compared with the previous study, the consumption of oxalic acid decreased 3/5, ITO glass powder dosage increased by 6 times and reaction time decreased 7/9. Meanwhile, the duration of indium ion concentration was maintained for 20 min instead of decreasing immediately after reaching the peak, which was conducive to actual application. The process kinetics model illustrated that temperature played the most important role in affecting the reaction rate. The potential reason of longer indium ion concentration maintaining duration was preliminarily speculated as a faster leaching of indium than calcium result in less coprecipitation caused by calcium oxalate. Therefore, the TCASR is applicable for leaching of indium from waste LCD screens by oxalic acid due to the higher leaching efficiency, less reagents consumption and stronger processing ability.
研究领域:
环境科学
·
冶金工程
✓ 已验证
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2025
·
IF 5.6
Bowen Xing,Min Zhang,Zhenya Zhang,Xiaolong Yao
In this study, In-doped SnS 2 nanostructures were synthesized by a one-step hydrothermal method. Characterization results demonstrated that S vacancies were successfully constructed in the synthesized material. Samples doped with different masses of indium were prepared. Among them, the In/V s2 -SnS 2 sample with moderate sulfur vacancy content the In/V s2 -SnS 2 showed the best ammonia detection response (500 ppm) at room temperature, and the peak response reached 2392. Moreover, the sensor exhibited a response/recovery time of 37.5s/3.3s. The adsorption energies of ammonia on the pure phase SnS 2 surface and S vacancies were determined by the first principle DFT calculations. The theoretical analysis agreed well with the experimental results, suggesting that the S vacancies provided more active sites for effective adsorption, favoring the sensitive detection of ammonia molecules. The proposed study demonstrates that In-doping created S vacancies in SnS 2 , which is promising for gas sensitization, laying the foundation for high-performance room-temperature gas sensors.
研究领域:
材料科学
·
传感器技术
✓ 已验证
产品关联
DOI
高影响因子
Environmental Science-Nano
·
2020
·Vol. 7
·期 8
·2229-2239
·
IF 7.683
Xianjun Tan,Guanhan Chen,Dingyu Xing,Wenhui Ding,Hao Liu,Ting Li,Yuxiong Huang
More and more attention has been redirected to per- and polyfluorinated alkyl substances (PFASs), particularly perfluorooctanoic acid (PFOA), owing to their ecotoxicity and environmental risks. As one of the major emerging and persistent contaminants in the environment, the current treatment processes could not remove PFOA efficiently. The recent advances in heterogeneous photocatalysis have demonstrated high efficiencies in degrading persistent contaminants, which provides an alternative approach for PFOA removal. Notably, Ga2O3-based photocatalysts exhibited great potential for PFOA remediation due to their high oxidizing capability and energy sustainability. Thus, Ga2O3 hierarchical nanosheets modified by a series of transition metals were rationally developed, and applied as heterogeneous photocatalysts for fast and efficient PFOA degradation. Noteworthily, the indium modified Ga2O3 hierarchical nanosheets achieved prominent PFOA decomposition activity, which can completely degrade 20 mg L−1 PFOA within 1 hour. The In–Ga2O3 hierarchical composites have dramatically enhanced the degradation kinetics for PFOA, which was 7.8 times higher than that of pristine Ga2O3. With in-depth mechanism investigation, we have demonstrated that In modification can not only enhance light harvesting and suppress photogenerated carrier recombination, but also favor the improvement of the adsorption ability for PFOA through the coexistence of monodentate and bidentate/bridging coordination modes. The transition metals–modification strategy paves the way for fabricating high-performance nanoscale photocatalysts for the removal of PFASs in water.
研究领域:
环境科学
·
材料科学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2023
·
IF 6.2
Pengtao Sheng,Youyang Xie,Shuyu Han,Yanling Li,Weili Li
Manganese ion-doped quantum dots (QDs) with wide band gaps have been widely investigated to modify their electronic, magnetic, and photophysical properties. The research on Mn-doped Cu-In-Se QDs with narrow band gaps has been minimal due to the profound differences in the reaction reactivity of cations. In this work, photoluminescent and magnetic Cu-In-Se QD nanoprobes were designed and synthesized by introducing Zn 2+ ions, which function as an intermediate acid that can regulate metal ion acidity to enhance the doping efficiency of Mn 2+ ions in a facile phosphine-free hot-injection protocol. The emission peaks of Zn-doped Cu-In-Se QDs and MnZn-doped Cu-In-Se QDs exhibit significant composition-dependent shifts. Moreover, incorporating manganese ions confers a paramagnetic character to MnZn-doped Cu-In-Se QDs and provides a quasi-core shell structure with an Mn-rich alloy shell layer, as demonstrated by the micro-structural surface analysis and electron paramagnetic resonance spectroscopy . Analyzing the decay lifetime and quantum yield reveals that this host-dopant coupling involves a preferential energy transfer from the host material to the dopant (Mn 2+ ions), wherein photogenerated electrons nonradiatively transfer to the 4 T 1 level of Mn dopant and then recombine with the Cu x state above the valance band of host QDs. The ability to serve as nanoprobes for the visualization of tumors through fluorescence and magnetic resonance dual-modality imaging makes these ternary MnZn-doped Cu-In-Se QDs strong candidates for practical applications in biology/biomedicine field.
研究领域:
材料科学
·
生物医学工程
·
光学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
·
2023
·
IF 10.9
Leini Wang,Gang He,Wenhao Wang,Xiaofen Xu,Shanshan Jiang,Elvira Fortunato,Rodrigo Martins
The homojunction based on Ti 3 C 2 T x MXene-doped In 2 O 3 and indium oxide as the channel layer is realized in high-performance metal oxide thin film transistors (TFTs). Doping of MXene into In 2 O 3 results in n-type semiconductor behavior, realizing tunable work function of In 2 O 3 from 5.11 to 4.79 eV as MXene content increases from 0 to 2 wt.%. MXene-doped In 2 O 3 -based homojunction TFT presents optimal performance with electron mobilities of greater than 27.10 cm 2 /(V s) at 240 °C, far exceeding the maximum mobility of 3.91 cm 2 /(V s) for single-layer In 2 O 3 TFTs. The improved performance originates from boosting of a two-dimensional electron gas (2DEG) formed at carefully engineered In 2 O 3 /MXene-doped In 2 O 3 oxide homojunction interface. Besides, the transformation in conduction mechanism leads to better stability of MXene-doped In 2 O 3 homojunction devices compared to undoped bilayer In 2 O 3 . Low-frequency noise further illustrates that doping MXene into In 2 O 3 helps to reduce the device trap density, demonstrating excellent electrical performance. A resistor-loaded unipolar inverter based on In 2 O 3 /0.5% MXene-In 2 O 3 TFT has demonstrated full swing characteristics and a high gain of 13. The effective doping of MXene into constructed homojunction TFTs not only contributes to improved stability, but also provides an effective strategy for designing novel homojunction TFTs for low-cost oxide-based electronics.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
高影响因子
Nano Energy
·
2024
·
IF 16.8
Jiangtao Guo,Liangfei Duan,Wen Yang,Qin Wang,Yunbo Zhang,Yong Zhang,Zhong Lin Wang,Peizhi Yang
Highly efficient and flexible power sources have always been the focus and goal in the field of wearable electronics. However, the existing wearable power sources are limited by their large size, high weight, electrolyte leakage, and poor mechanical compliance, which seriously hinders their practical applications. Herein, we propose a novel strategy to achieve and demonstrate a fabric-based high-performance wearable triboelectric nanogenerator (TENG) structure. The metals of gallium (Ga), bismuth (Bi), indium (In), and tin (Sn) are mixed according to specific mass ratios, and then they are transformed in liquid phase to form room-temperature multiphase soft metals of GaBiInSn. The material exhibits both metallic and fluidic properties, and possesses a characteristic of multiphase structure. The GaBiInSn material is directly deposited between polytetrafluoroethylene (PTFE) layers and nonwoven fabrics to establish multi-level conductive and frictional interfaces, creating charge transfer and solid-liquid hybrid dielectric layers. Therefore, the thin film-type triboelectric nanogenerators with a structure of PTFE/GaBiInSn/nonwoven fabric (LM-P-TENGs) is manufactured. The LM-P-TENGs can be integrated onto fabrics without compromising their breathability, comfortableness, and flexibility. Particularly, LM-P-TENGs efficiently convert the mechanical energy of human limb movements into sustainable electrical energy output. Under the human limb mechanical triggering conditions, LM-P-TENG achieves a champion specific open-circuit voltage up to 900 V, peak short-circuit current density of 43.3 mA/m 2 , and high power density of 12.56 W/m 2 . This work demonstrates the application potential of room-temperature multiphase soft materials in flexible wearable power sources, while introducing a novel power supply mode for wearable electronics. Additionally, the LM-P-TENGs also present applications in self-powered wearables, medical biosensing systems, human-machine interaction systems, near-eye display systems, etc. for the flexible electronics.
研究领域:
材料科学
·
能源技术
·
柔性电子学
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）