JOURNAL OF MATERIALS SCIENCE
·
2019
·Vol. 54
·期 24
·14742-14751
·
IF 3.442
Yang Tao,Li Xing,Wang Liming,Liu Yiming,Chen Kaijian,Yang Xun,Liao Lei,Dong Lin,Shan Chong-Xin
Due to their unique structure and photoelectrical properties, two-dimensional (2D) materials have attracted enormous attention on next-generation optoelectronic devices. Recently, the newly discovered 2D layered Bi 2 O 2 Se has exhibited outstanding sensitivity and optoelectronic properties. However, the performance of these 2D layered Bi 2 O 2 Se photodetectors can be limited by the high dark currents. The suitable band structure of 2D MoSe 2 can form a type-II heterojunction with Bi 2 O 2 Se, which can reduce the dark current, modulate the interlayer transition energy and induce the charge spatial separation. Herein, we demonstrated a photodetector based on the heterojunction fabricated by van der Waals assembly between Bi 2 O 2 Se and few-layer MoSe 2 , showing visible to near-infrared detection range. Moreover, our results showed that the dark current of this photodetector was significantly reduced and the I on /I off ratio was greatly improved. Importantly, it exhibited a broad detection range from 405 to 808 nm with a responsivity of 413.1 mA W −1 , a high detectivity of 3.7 × 10 11 Jones (at 780 nm) at room temperature. Compared with the 2D Bi 2 O 2 Se photodetector, the photocurrent response and recovery time in the heterojunction photodetector was greatly reduced from 1.92/1.31 to 0.79/0.49 s at room temperature. Our results showed that 2D Bi 2 O 2 Se/MoSe 2 heterojunction has a great potential for broadband and fast photodetection.
研究领域:
凝聚态物理
·
纳米光电子学
·
材料科学
·
半导体器件
·
低维材料
✓ 已验证
DOI
高影响因子
CHEMISTRY OF MATERIALS
·
2022
·
IF 10.508
Ruiwen Ji,Meng Lei,Cécile Genevois,Wenda Zhang,Xing Ming,Lunhua He,Mathieu Allix,Congling Yin,Xiaojun Kuang,Xianran Xing
Layered materials coupling a two-dimensional strong-bonding layered network with much weaker van der Waals (vdW) interaction between the layers are sought after for the development of nanoelectronics and energy conversion devices. It is important to elucidate the layer stacking rules in these vdW materials and control the thickness of the strong-bonding layers for tuning the nanosheet height during exfoliation and therefore tailor physical properties. Here, we show that the single Bi2O2Se ionic layer in the three-anion vdW semiconductor Bi4O4SeCl2 showing extremely low thermal conductivity can be expanded to higher-order layers forming a homologous series Bi2+2nO2+2nSenX2 (X = Cl, Br) with variable ionic layer thicknesses. Bi4O4SeX2 (n = 1) and Bi6O6Se2X2 (n = 2) were isolated as single-phase materials, while materials with larger layer thicknesses such as Bi8O8Se3Cl2 (n = 3) contain different defect-intergrowth structures at the crystallite scale. The anionic disorder of Se and X within the Bi2O2Se and Bi2O2X2 slabs is a critical factor in the stabilization of Bi2+2nO2+2nSenX2. The ∼50% Se substitution by X anions in the Bi2O2Se slab as related to the weak interlayer interaction can serve as a stabilization criterion of Bi2+2nO2+2nSenX2. All of these materials show similar optical indirect band gaps of ∼1.05 eV, originating from the electronic states in the Bi2O2Se slabs. Pellets prepared from these vdW materials possessed low bulk resistivities (100 Ω·cm) and exceptionally low and tunable thermal conductivities (0.66 W/mK and lower) parallel to the pressing axis of the pellets (heavier the halogen is, lower is the thermal conductivity). The results presented here provide important multiple anion chemistry for tailoring the ionic-bonding network into different thicknesses in the vdW layered structures and therefore their physical properties.
研究领域:
材料科学
·
化学
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2025
·
IF 6.3
Jing Liu,Silan Zhou,Rong Hu,Lin Xue,Jun Li
The development of advanced electrode materials with high specific capacitance and long-term stability is crucial for next-generation supercapacitors. In this work, a novel Bi₂O₂Se/polyaniline (PANI) composite electrode was synthesized via an optimised synthesis protocol. The developed composite exhibited remarkable electrochemical performance, achieving a specific capacity of 630.5 mAh g⁻¹ at 1 A g⁻¹ – surpassing the performance of pristine Bi₂O₂Se (266.7 mAh g⁻¹) by a factor of 2.3. Notably, it achieved 60 % capacity retention at an ultra-high current density of 20 A g⁻¹ and maintains 73 % capacity retention after 5000 cycles, demonstrating outstanding cycling stability. These breakthroughs stem from the synergistic interplay between Bi₂O₂Se's interlayer architecture and PANI's pseudocapacitive properties. This work establishes the Bi₂O₂Se/PANI composite as a promising electrode material for next-generation supercapacitors and offers a versatile design framework for flexible electronics and grid-scale renewable energy storage systems.
研究领域:
材料科学
·
电化学
·
储能
·
纳米技术
✓ 已验证
产品关联
DOI
高影响因子
VACUUM
·
2025
·
IF 3.9
Pingfan Ning,Xiangyu Li,Feifei Lan,Xuerong Li,Yingmin Wang,Hongjuan Cheng,Yujian Wang
Bi 2 O 2 Se exhibits broader application prospects compared to other two-dimensional materials due to its high electron mobility , optimal band gap and good environmental stability. In this paper, large-area high-quality 2D Bi 2 O 2 Se single-crystal nanosheets were synthesized via a NaCl-assisted chemical vapor deposition (CVD) approach. It was found that the addition of a modest amount of NaCl effectively promoted the transverse growth of 2D Bi 2 O 2 Se, resulting in larger dimensions. At the same time, the effects of varying NaCl concentrations on the growth of 2D Bi 2 O 2 Se were investigated, elucidating the underlying growth mechanisms. Additionally, various halogen salt-assisted growth experiments were conducted to explore the differential effects of distinct halogen salts on the process. The results indicate that the salt-assisted method significantly enhances the growth process, offering novel insights for the large-scale synthesis of 2D Bi 2 O 2 Se.
研究领域:
材料科学
·
纳米技术
·
半导体材料
·
晶体生长
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
·
2018
·Vol. 101
·期 10
·4634-4644
·
IF 2.956
Xing Tan,Jin-Le Lan,Kerong Hu,Ben Xu,Yaochun Liu,Peng Zhang,Xing-Zhong Cao,Yingcai Zhu,Wei Xu,Yuan-Hua Lin,Ce-Wen Nan
N -type Bi 2 O 2 Se has a bright prospect for mid-temperature thermoelectric applications on account of the intrinsically low thermal conductivity. However, the low carrier concentration of Bi 2 O 2 Se (~10 15 cm −3 ) severely limits its thermoelectric performance. Herein, the boosting of the carrier concentration to ~10 19 cm −3 can be realized in our La-doped Bi 2 O 2 Se ceramic samples, which could be ascribed to the formation of isoelectronic traps and the narrowing of band gap, and contribute to a marked increase in the electrical conductivity (from 0.03 S cm −1 to 182 S cm −1 ). Our X-ray absorption near-edge structure spectra results reveal that a local disordering of oxygen atoms could be an important reason for the intrinsically low thermal conductivity of Bi 2 O 2 Se, and the point defects can also suppress the lattice thermal conductivity in La-doped Bi 2 O 2 Se. The ZT value can be enhanced by a factor of ~4.5 to 0.35 at 823 K for Bi 1.98 La 0.02 O 2 Se as compared to the pristine Bi 2 O 2 Se. The coordinated optimization of electrical and thermal properties demonstrates an effective method for the rational design of high-performance thermoelectric materials.
研究领域:
材料科学
·
热电学
·
固体物理
·
陶瓷
·
能源材料
✓ 已验证
DOI
高影响因子
Advanced Optical Materials
·
2022
·Vol. 10
·期 23
·2201396
·
IF 10.05
Yuchao Wei,Chao Chen,Chong Tan,Le He,Zhengze Ren,Chaoyi Zhang,Silu Peng,Jiayue Han,Hongxi Zhou,Jun Wang
Owing to its suitable electronic bandgap, excellent air stability, and high carrier mobility at room temperature, low-dimensional bismuth oxyselenide (Bi 2 O 2 Se) has become attractive in the context of visible–near-infrared (VIS–NIR) detection. However, the high carrier concentration and bolometric effect of Bi 2 O 2 Se nanosheets are not conducive to reducing the dark current and improving the response speed, which hinders Bi 2 O 2 Se nanosheet-based photodetectors from achieving an optimal performance. In this study, a Bi 2 O 2 Se nanoribbon is controllably synthesized on a fluorophlogopite substrate by means of the chemical vapor deposition approach. Through the use of a Bi 2 O 2 Se nanoribbon structure and the application of a Schottky barrier between the Bi 2 O 2 Se and Au electrodes, a fast response and low noise photodetector is achieved. More specifically, the response times are 2.1 and 313 µs at 650 and 1550 nm, respectively, and the corresponding optimal detectivities are 3.28 × 10 13 and 8.07 × 10 9 Jones. Furthermore, the device reaches a −3 dB bandwidth of 81 kHz and exhibits a responsivity of 3.2 × 10 5 A W −1 at 650 nm under a bias of 5 V. This study provides new opportunities for the application of high-performance VIS–NIR photodetectors.
研究领域:
材料科学
·
光电探测
✓ 已验证
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2026
·Vol. 37
·期 14
·1112
·
IF 3.2
Wei Zehao,Liu Jing,Wang Xihe,Li Jun
Electrochromic materials undergo reversible color changes through redox reactions involving the insertion and extraction of electrons and ions under an applied electric field. In this study, we systematically investigate the photo-assisted electrochromic behavior of Bi 2 O 2 Se nanosheets, which exhibit a color transition from gray to yellow under light modulation. Bi 2 O 2 Se nanosheets were successfully synthesized via a hydrothermal method and characterized in a three-electrode system using photoelectrochemical measurements. During the tests, an external bias of 0.6 V was applied while the samples were illuminated with monochromatic light in the wavelength range of 400–650 nm. The results show that illumination across this wavelength range can promote the coloration process.Upon further reducing the applied voltage, it is found that shorter-wavelength light effectively lowers the threshold voltage for electrochromic switching, exhibiting a nonlinear increase in threshold voltage with increasing incident wavelength. Compared with white-light illumination, the coloration process under monochromatic light is slower and mainly results in partial coloration. The colored samples were subsequently discharged at 0 V, during which the electrode color gradually recovered, and the photocurrent returned to approximately 0.42 µA cm⁻ 2 , close to its initial value. These results indicate that the system exhibits a certain degree of reversibility in both electrochromic behavior and electrochemical function.Overall, the findings demonstrate that photon energy can modulate the threshold voltage and kinetics of electrochromic processes in Bi 2 O 2 Se nanosheets, providing new experimental insights and potential applications for photo-responsive electrochromic devices.
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2026
·
IF 6.3
Canda Zheng,Yunbo Shi,Bolun Tang,Peicheng Han,Jianhua Zhang
Tungsten oxide (WO 3 ) is widely used for detecting harmful gases, such as NO 2 , because of its excellent gas-sensing properties. However, pure WO 3 sensors suffer from high operating temperatures, poor selectivity, and rapid sensitivity degradation. In this study, for the first time, Bi 2 O 2 Se crystals were synthesized via a high-temperature solid-state reaction under a vacuum, and WO 3 /Bi 2 O 2 Se heterojunction composites were fabricated using a one-step hydrothermal method to enhance the NO 2 sensing performance. By adjusting the Bi 2 O 2 Se content, the optimal performance was achieved at 15 wt% Bi 2 O 2 Se (WB-15), which showed a high response (R g /R a = 3.42) toward 50 ppm NO 2 at 190 °C, a low detection limit (100 ppb), rapid response/recovery times (83/91 s), excellent repeatability (S = 2.42%), and good long-term stability. Characterization results showed that acidic etching (pH 1.7) increased the specific surface area and the number of active sites of Bi 2 O 2 Se, enhancing its gas adsorption capacity. Analysis of gas-sensing mechanism revealed that the n–n heterojunction between WO 3 and Bi 2 O 2 Se effectively modulated the interface barrier and carrier migration, intensifying the electron depletion effect under NO 2 and significantly improving the sensing response. This study introduced Bi 2 O 2 Se as a novel sensitizing material, offering a new approach for designing high-performance heterojunction gas sensors with enhanced sensitivity and selectivity.
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
·
2018
·
IF 3.794
Rui Liu,Jin-le Lan,Xing Tan,Yao-chun Liu,Guang-kun Ren,Chan Liu,Zhi-fang Zhou,Ce-wen Nan,Yuan-hua Lin
The Bi 2 O 2 Se-based compounds with an intrinsically low thermal conductivity and relatively high Seebeck coefficient are good candidates for thermoelectric application. However, the low electrical conductivity resulted from carrier concentration of only 10 15 cm −3 for pristine material, which is too low for optimized thermoelectrics. As a result, the carrier concentration optimization of Bi 2 O 2 Se is important and useful to achieve higher power factor. In this work, the effect of Ge-doping at the Bi site has been investigated systematically, with expectations of carrier concentration optimization. It is found that Ge doping is an efficient method to increase carrier concentration. Due to the largely increased carrier concentration via Ge doping, the room temperature electrical conductivity rises rapidly from 0.03 S/cm in pristine sample to 133 S/cm in x = 0.08 sample. Combined with the intrinsically low thermal conductivity , a maximum ZT value of 0.30 has been achieved at 823 K for Bi 1.92 Ge 0.08 O 2 Se, which is the highest ZT value for Bi 2 O 2 Se-based thermoelectric materials .
研究领域:
材料科学
·
热电学
·
半导体物理
✓ 已验证
DOI
高影响因子
VACUUM
·
2023
·
IF 4
Heyan Yuan,Fang Wang,Xin Lin,Xin Shan,Kaiyi Zhang,Jixiang Zhong,Yujing Ji,Ke Shan,Yangyang Xie,Kai Hu,Zhitang Song,Kailiang Zhang
As an emerging ultrathin semiconductor material, Bi 2 O 2 Se has shown outstanding performance in fields of electronics, optoelectronics and ultrafast optics. High performance Bi 2 O 2 Se nanosheets were desperately needed for further foundational research and practical applications. However, their synthesis has not yet been completely developed. In this paper, high quality Bi 2 O 2 Se nanosheets were efficiently obtained by sdjusting synthesis pressure. The uniform nucleation of Bi 2 O 2 Se nanosheets on substrates was achieved, put forward the nucleation mechanism of Bi 2 O 2 Se nanosheets. The near-infrared (NIR) optoelectronic properties of multilayer Bi 2 O 2 Se nanosheets were systematically investigated. Photodetectors were constructed based on Bi 2 O 2 Se nanosheets of different thicknesses and the near-infrared (NIR) photoelectric properties of Bi 2 O 2 Se-based photodetectors with the highest responsivity were systematically investigated. The multilayer Bi 2 O 2 Se nanosheets exhibit sensitive responsivity to the NIR, including high responsivity (∼825 A/W), high external quantum efficiency (∼1.25 × 10 5 %) and high detectivity (6 × 10 10 Jones). These results suggest that devices based on multilayer Bi 2 O 2 Se nanosheets may have great potential for future applications in ultrafast, high-sensitivity NIR optoelectronic devices.
研究领域:
材料科学
·
光学
·
电子工程
✓ 已验证
DOI
高影响因子
Advanced Electronic Materials
·
2022
·Vol. 8
·期 9
·2200126
·
IF 7.633
Yan Xia,Jing Wang,Rui Chen,Hongbo Wang,Hang Xu,Changzhong Jiang,Wenqing Li,Xiangheng Xiao
2D materials have shown great potential in the application of resistive random access memory (RRAM) for information storage. Much attention has been attracted from 2D semiconducting bismuth oxyselenide (Bi 2 O 2 Se) for excellent properties in multi-performance nanoelectronics. By using a chemical vapor deposition (CVD) method, Bi 2 O 2 Se nanosheets with high quality are grown. Combining with the oxygen plasma method, 2D heterostructure of Bi 2 O 2 Se/Bi 2 SeO x nanosheet is realized; and the heterostructure exhibits obvious resistive switching behavior. The resistive switching mechanism is analyzed in detail, and the conductive mechanism of the fabricated device is also discussed. The resistive switching of Bi 2 O 2 Se nanosheets is endowed through the method of O 2 plasma treatment, which makes it feasible for developing its application in the RRAM.
研究领域:
材料科学
·
纳米电子学
·
非易失性存储器
·
二维材料
·
阻变效应
✓ 已验证
DOI
高影响因子
Science China-Materials
·
2026
·
IF 7.7
Xue Chengyuan,Li Ye,Sun Weiyu,Li Jiade,Guo Jiandong,Zhu Xuetao,Tan Congwei,Peng Hailin
Two-dimensional (2D) semiconductor Bi 2 O 2 Se has emerged as a promising channel material in post-Moore transistors. To realize its potential for industrial applications, a facile and reliable synthesis method for large-area, uniform, single-crystalline Bi 2 O 2 Se films on industrially compatible substrates is highly desired. However, existing approaches typically rely on solid-source evaporation, which suffers from poor precursor volatility and irreproducible mass transfer. Moreover, the epitaxial growth of 2D Bi 2 O 2 Se has been predominantly confined to non-scalable substrates such as perovskite oxides or mica. Here we report a metal-organic chemical vapor deposition (MOCVD) route to high-quality, single-crystalline Bi 2 O 2 Se films grown directly on industrially compatible r -plane sapphire. By employing triphenylbismuth and elemental selenium as volatile precursors, we achieve uniform and reproducible 2D film growth. Field-effect transistors fabricated from these films exhibit outstanding electrical performance, with an on/off ratio exceeding 10 5 , and the highest mobility of ∼228 cm 2 V −1 s −1 .
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产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）