International Journal of Minerals Metallurgy and Materials
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2025
·Vol. 32
·期 4
·964-972
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IF 7.2
Han Dan,Liu Xiaoru,Li Donghui,Shi Jiexu,Wang Yu,Wang Yuxuan,Wang Hongtao,Sang Shengbo
In this work, we realized a room-temperature nitrogen dioxide (NO 2 ) gas sensor based on a platinum (Pt)-loaded nanoporous gallium nitride (NP-GaN) sensing material using the thermal reduction method and coreduction with the catalysis of polyols. The gas sensor gained excellent sensitivity to NO 2 at a concentration range of 200 ppm to 100 ppb, benefiting from the loading of Pt nanoparticles, and exhibited a short response time (22 s) and recovery time (170 s) to 100 ppm of NO 2 at room temperature with excellent selectivity to NO 2 compared with other gases. This phenomenon was attributed to the spillover effect and the synergic electronic interaction with semiconductor materials of Pt, which not only provided more electrons for the adsorption of NO 2 molecules but also occupied effective sites, causing poor sites for other gases. The low detection limit of Pt/NP-GaN was 100 ppb, and the gas sensor still had a fast response 70 d after fabrication. Besides, the gas-sensing mechanism of the gas sensor was further elaborated to determine the reason leading to its improved properties. The significant spillover impact and oxygen dissociation of Pt provided advantages to its synergic electronic interaction with semiconductor materials, leading to the improvement of the gas properties of gas sensors.
研究领域:
材料科学
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传感器技术
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环境监测
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产品关联
DOI
高影响因子
NANOTECHNOLOGY
·
2023
·Vol. 34
·期 31
·315203
·
IF 3.5
WeiSun Huang,Shengjie Hu,Xuecheng Jiang,Yuyan Weng,Yu Liu,Xue Tang,Guofeng Yang,Xun Wang,Naiyan Lu
Carcinoembryonic antigen (CEA) is a well-known biomarker and validated serum biomarker for lung cancer. We introduce a simple label-free method for CEA detection. Specific recognition of CEA was made possible by immobilizing CEA antibodies in the sensing region of AlGaN/GaN high-electron-mobility transistors. The biosensors have a detection limit of 1 fg ml−1 in phosphate buffer solution. This approach has advantages of integration, miniaturization, low cost, and rapid detection compared to other testing methods for lung cancer and could be used in future medical diagnostics.
研究领域:
医学诊断
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生物传感技术
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半导体器件
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产品关联
DOI
PubMed
高影响因子
APL Materials
·
2015
·Vol. 3
·期 10
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IF 2.789
Wang Lizhong,Ouyang Shuxin,Ren Bofan,Ye Jinhua,Wang Defa
Macroporous GaN/ZnO solid solution photocatalyst is synthesized through a novel sol-gel method under mild conditions. The performance of as-synthesized solid solution photocatalyst is evaluated for decomposition of gaseous 2-propanol (IPA). It is found that due to enhancement in both the adsorption to gaseous IPA and the absorbance to visible light, the porous GaN/ZnO solid solution exhibits a good photocatalytic performance for IPA decomposition. Moreover, the mechanism for photocatalytic degradation IPA over porous GaN/ZnO solid solution is also investigated in comparison with those for the two end materials ZnO and GaN. The trapping effects with different scavengers prove that both the photoexcited electrons and holes affect the IPA photodegradation process, simultaneously.
研究领域:
材料科学
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环境科学
✓ 已验证
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2020
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IF 8.758
Jing Li,Wenjin Yang,Aimin Wu,Xinglai Zhang,Tingting Xu,Baodan Liu
A (GaN)1–x(ZnO)x solid solution as a promising visible-light-driven photocatalyst for overall water splitting has attracted extensive attention. In this work, we proposed a template reactive strategy toward the synthesis of band-gap tunable 2D (GaN)1–x(ZnO)x nanosheets as thin as 14 nm to reduce the carrier transportation path and thus efficiently decrease the recombination of electrons and holes. It is demonstrated that the template strategy enables an ideal morphology and structure transformation from hexagonal 2D ZnGa2O4 nanosheets to 2D (GaN)1–x(ZnO)x nanosheets in the nitridation process. After the modification of 1 wt % of Rh cocatalyst, the flowerlike (GaN)0.89(ZnO)0.11 nanosheets show an enhanced hydrogen evolution in pure water (pH 4.5).
研究领域:
材料科学
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能源化学
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产品关联
DOI
PubMed
高影响因子
JOURNAL OF POWER SOURCES
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2024
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IF 8.1
Kai Zhou,Min Zou,Jingwen Guo,Zhen Xu,Wei Hu,Yuzhou Zhu,Libin Liu,Ligang Gai
The surface atomic structure and crystallinity have an important effect on the electrochemical energy storage of electrode materials , in addition to the surface chemistry and textural properties. We report here for the first time that the surface atomic structure and crystallinity of GaN , a renowned electrode material for energy storage, can be tuned by controlling the annealing time via potassium nitrate-mediated synthesis. The underlying mechanism for GaN microcrystals with enhanced intensity ratios of I (002)/(100) and I (101)/(100) manifesting excellent rate performance has been revealed by theoretical computations. The energy storage mechanism and electrode kinetics of the GaN electrodes have been clarified. In addition, the GaN microcrystals-based symmetric supercapacitors empowered by 52 wt% H 3 PO 4 can deliver an output voltage of 1.5 V and volumetric specific energy of 11.6 and 40.2 W h L −1 at a specific power of 392.2 W L −1 when operating at −60 and 60 °C, respectively, with electrode material on a commercial loading level.
研究领域:
材料科学
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电化学
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产品关联
DOI
高影响因子
DALTON TRANSACTIONS
·
2012
·Vol. 41
·期 17
·5334-5342
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IF 3.838
Yan Zhao,Bing Yan
Three kinds of rare earth hybrid materials with enhanced thermostability and photoluminescence properties have been prepared for the first time by using a functionalized GaN matrix as one of the building blocks. A number of silane coupling agents (isocyanate triethoxysilane (ICTES), 3-chloropropyl triethoxysilane (CPTES) and 3-aminopropyl triethoxysilane (APTES)) behave as the covalent linkages for modification by both hydroxylation of GaN and functionalized photoactive ligands (4-mercaptobenzoic acid (MBA), 4-hydroxybenzoic acid (HBA) and nitrobenzoyl chloride (NBC)), resulting in the precursors (MBA–ICTES–GaN, HBA–CPTES–GaN and NBC–APTES–GaN). Subsequently, multicomponent photofunctional rare earth hybrid materials with the three precursors and 1,10-phenanthroline (Phen) are assembled and characterized by their FTIR spectra, UV–vis diffuse reflectance spectra, XRD patterns, and photoluminescent behaviour (luminescence, lifetime, quantum efficiency, and energy transfer). These results reveal that the Eu3+ hybrids with the MBA–ICTES–GaN unit have a better luminescence intensity ratio, higher quantum efficiency and longer lifetime than those with the HBA–CPTES–GaN and NBC–APTES–GaN units. Meanwhile the hybrid Phen–Tb–HBA–CPTES–GaN possesses a stronger characteristic emission of Tb3+ ions than the other two hybrids (Phen–Tb–MBA–ICTES–GaN and Phen–Tb–NBC–APTES–GaN). Moreover, two-color-based hybrid materials are fabricated by combining different molar ratios of Eu3+ and Tb3+ in the same system (Phen–RE–MBA–ICTES–GaN) with emission at a wavelength of 331 nm (RE = Eu, Tb) and yellow luminescence can be achieved.
研究领域:
材料科学
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光学
✓ 已验证
DOI
高影响因子
ACS Applied Nano Materials
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2019
·
IF 0
Hongxiang Zhang,Chunxia Wu,Canran Zhang,Bisheng Yan,Jiyuan Guo,Gangyi Zhu,Jun Dai
In this paper, we report the dual-wavelength green-light emission from zinc oxide (ZnO)-nanoseed-decorated p-GaN (gallium nitride)/n-ZnO nanorod/CsPbBr3 quantum dots (QDs) light-emitting diodes (LEDs). At the same time, the effect of ZnO nanoseeds on the p-GaN/n-ZnO nanorod/CsPbBr3 QDs LED performance is deeply studied. ZnO nanoseeds were fabricated by magnetron sputtering and the sol–gel method; then ZnO nanorods were obtained on GaN by hydrothermal treatment to form the p-GaN/n-ZnO nanorod heterojunction, and green CsPbBr3 QDs were further deposited on ZnO nanorod arrays to realize LEDs. The results show that magnetron-sputtering ZnO nanoseeds can induce regular vertical ZnO nanorod arrays, and the corresponding device presents a better electroluminescence (EL) performance. The X-ray diffraction, atomic force microscopy, and EL mechanisms indicate that the p-GaN/n-ZnO nanorod with magnetron-sputtering ZnO nanoseeds has a better crystalline interface. Our results indicate that the p-GaN/n-ZnO nanorod/CsPbBr3 QDs heterojunction structure can be served as dual-wavelength LEDs, and magnetron-sputtering ZnO nanoseeds can give rise to a better EL performance.
研究领域:
材料科学
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光电技术
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纳米科技
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产品关联
DOI
MICROCHEMICAL JOURNAL
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2025
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IF 5.1
Shengjie Hu,Yin Zou,Xuecheng Jiang,Yuyan Weng,Yu Liu,Xue Tang,Guofeng Yang,Naiyan Lu
Staphylococcus aureus is a common foodborne pathogen known to cause infections and poisoning. Hence, there is a pressing need to establish a rapid and sensitive detection method to mitigate the risk of bacterial contamination. Gallium nitride-based high electron mobility transistors (GaN HEMTs), representing emerging semiconductor sensors, have garnered significant research attention due to their advantages in integration, miniaturization, and rapid sensitivity. In recent years, the device has demonstrated excellent performance in detecting gases, heavy metals, and biomarkers. This paper prepares a novel GaN HEMT sensor with aptamer modification that can be applied to the detection of Staphylococcus aureus , which has great potential for application in food safety detection. The linear detection range of the functionalized device is 10 2 CFU/mL–10 7 CFU/mL, and the detection limit was 19 CFU/mL. In terms of specificity, interfering bacteria such as E. coli produced only 9.6 %–16.7 % of the current signal generated by S. aureus . When tested with actual samples, the device showed consistent detection results compared to those in the buffer system (95.2 %–97.2 %). This work demonstrates performance that is comparable to or even superior to other methods in terms of detection limits and response speed. Additionally, the HEMT sensor stands out by eliminating the need for supplementary reference electrodes or complex systems. With its rapid detection time, user-friendly operation, and exceptional selectivity, this sensor shows great promise for practical applications, particularly in field testing scenarios.
研究领域:
食品安全检测
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微生物学
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传感器技术
✓ 已验证
产品关联
DOI
高影响因子
SENSORS AND ACTUATORS B-CHEMICAL
·
2022
·
IF 9.221
Donghui Li,Dan Han,Yi Chen,Zhihua Liu,Xiaoru Liu,Lulu Liu,Xiaomei Han,Xiuli He,Shengbo Sang
Accurate detection of NO 2 gas with low concentration and high stability is of great significance to ecological protection and human health. In this work, hollow porous GaN nanofibers were fabricated by a low-cost solvothermal method and controlled nitridation process. Systematic characterizations results demonstrate large specific surface and abundant adsorpation sites of the GaN nanofibers. Excellent NO 2 sensing performances were tested at 200 °C, including the high sensitivity of 22.9 (200 ppm), rapid response time within 11 s, high selectivity, and low detection limit (0.5 ppb). Furthermore, the anti-interference ability, cross-sensitivity characteristics, and long-term stability of the sensor in the actual working environment were also systematically investigated. The surface depletion layer model and the change of the potential barrier were used to explain the enhanced gas-sensing performance. The fabricated GaN sensor offered a promising candidate for real-time monitoring of sub-ppb-level NO 2 gas in actual environments.
研究领域:
材料科学
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环境科学
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
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2021
·
IF 5.316
Qing Liu,Yu Qing Yang,Xingfu Wang,Weidong Song,Xingjun Luo,Jiaqi Guo,Jiang Shi,Chuan Cheng,Dongyang Li,Longfei He,Kai Li,Fangliang Gao,Shuti Li
ABSTRACT In recent years, the combination of perovskites with other materials to improve the photoelectric performance has received widespread attention. In this work, we demonstrate a hybrid heterostructure photodetector with the combination of GaN microwire array and perovskite. Compared to perovskite and GaN microwire array photodetectors, the hybrid CH 3 NH 3 PbI 3- x Cl x /GaN microwire array photodetector exhibits more excellent photoelectric performances in a wide detection range from ultraviolet to visible. Under 325 nm laser irradiation, the hybrid photodetector generates a large photocurrent (1.04 ×10 -5 A), a high on/off ratio (>10 4 ), a fast response time (raise time of 0.66 ms and decay time of 0.71 ms), and higher responsivity , detectivity. Meanwhile, when the perovskite is combined with the GaN microwire array, the device also has a higher photocurrent, on/off ratio, and faster photoresponse compared with the perovskite photodetector in the visible light region. This is interpreted as the effective separation photogenerated carriers at the hetero-interface, and the directional transfer of carriers within the one-dimensional GaN microwire array. This study sheds light on fabricating high-performance heterostructures photodetectors.
研究领域:
材料科学
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光子学
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光电子学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF LUMINESCENCE
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2021
·
IF 3.599
Cen Zhang,Xiaonan Zhu,Fei Gao,Liu Yang,Weizhen Liu
The development of wavelength adjustable electrically driven panchromatic display light-emitting devices (LEDs), a future direction for lighting sources, still seems necessary because of great development prospects and practical significance. Herein, perovskite quantum dots (QDs) of CsPbBr 3 and CsPbI 3 with multi-color luminescence feature were employed into n-ZnO/p-GaN nano-heterojunction LEDs. A thin polystyrene cover layer was intentionally inserted between CsPbBr 3 and CsPbI 3 to prevent the undesired halogen anion-exchange reaction. A color-tunable electroluminescence (EL) could be achieved by changing the molar ratio of these two types of perovskite QDs. By further optimizing the molar ratio between CsPbBr 3 and CsPbI 3 , that is, the evolution of the share of red, green and blue-violet luminescence in EL spectra, a stable white light emission was obtained. The current research not only achieves multi-color EL emissions in a three-dimensional nano-architecture, but also proposes an effective and clever strategy for preparing and developing single-chip white LEDs.
研究领域:
材料科学
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光学工程
·
纳米技术
✓ 已验证
产品关联
DOI
高影响因子
SENSORS AND ACTUATORS B-CHEMICAL
·
2023
·
IF 8.4
Zi-ang Zhang,Li-fan Nie,Quan Zhou,Zhi-Dan Song,Ge-bo Pan
The structure and morphology of gas-sensitive materials were extremely important to performances of gas sensor. In this work, ZnO nano-crystalline (ZnO NCs) was synthesized on foam-like GaN (F-GaN) by sol-gel method as gas-sensitive materials of H 2 S gas sensor. When ZnO NCs/F-GaN composite structure was used as gas- sensitive materials for detection of H 2 S with the concentration of 50 ppm at 220 °C. Importantly, rapid response and recovery time was 78 and 31 s, respectively. Enhancement of the sensing response was mainly attributed to the combination between ZnO NCs and F-GaN. In addition, a multiphase catalytic mechanism was proposed to description the catalytic role of F-GaN in the gas sensing procedure. These results further broadened the application of as-prepared metal oxide semiconductor based GaN in the gas sensing field.
研究领域:
材料科学
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传感器技术
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化学工程
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）