JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
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2026
·Vol. 37
·期 15
·1211
·
IF 3.2
Wang Zhiquan,Dong Chengang,Wang Xin
Resistive switching (RS) in oxide-based memristive devices is strongly affected by the stochastic formation and rupture of oxygen vacancies ( V o ) conductive filaments, which limits device-to-device uniformity, cycle-to-cycle stability, and overall reliability. To mitigate such randomness, HfO 2 thin films were prepared via a sol–gel route at different post-annealing temperatures, and Pt point defects or interlayer defects were further introduced. The synergistic effects of annealing temperature and Pt-related defects on RS characteristics were systematically evaluated. Electrical measurements reveal that HfO 2 films annealed at 500 °C exhibit the most desirable RS behavior and overall performance. At lower annealing temperatures, excessive organic residues and insufficient film densification suppress the formation of stable conductive filaments, resulting in weak switching behavior. In contrast, excessively high temperatures induce grain coarsening and grain boundary reduction, and may simultaneously generate excess V o , leading to degraded insulation (i.e., reduced high-resistance state (HRS)) and thus weakened RS performance. Furthermore, a moderate density of Pt point defects induces local electric-field distortion, which is believed to promote directional V o migration, and enhance filament formation reproducibility, thereby contributing to improved switching stability. However, when the defect density becomes too high (strong Pt aggregation or layer-like Pt intercalation), the film insulation is compromised, HRS resistance decreases, and RS performance deteriorates. In this study, the sample with 20 s Pt sputtering exhibited the optimal RS performance. Overall, rational design of artificial defect structures combined with appropriate thermal treatment can help suppress the stochastic nature of filament evolution and consequently improve switching stability and device reliability. These findings provide experimental guidance and mechanistic insight into defect-engineering strategies for highly stable RS memory devices.
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高影响因子
Discover Materials
·
2026
·Vol. 6
·期 1
·152
·
IF 5.8
Kumar Ashwini,Gong Yong,Cui Jin,Qiu Fujun,Zhang Yong,Pu Xingyu,Sharma Poorva
A novel biphasic Dy 2 Hf 2 O 7 -HfO 2 composite was synthesized via a solid-state reaction route for potential thermal barrier coating (TBC) applications. X-ray diffraction confirmed that the reaction between Dy 2 O 3 and HfO 2 at 1500 °C yields a dense composite comprising ∼81 wt% cubic pyrochlore Dy 2 Hf 2 O 7 and ∼19 wt% cubic fluorite HfO 2 . Microstructural analysis revealed a hierarchical architecture of nanoscale crystallites (25–34 nm for Dy 2 Hf 2 O 7 and ~ 13 nm for HfO 2 ) agglomerated into faceted microparticles (~ 1.1 μm). Williamson-Hall analysis indicated significant lattice strain within the Dy 2 Hf 2 O 7 phase due to its complex pyrochlore framework and cation-size mismatch, whereas HfO 2 remained nearly strain-free. The thermophysical properties of Dy 2 Hf 2 O 7 –HfO 2 composites were studied from room temperature to 1200 °C. The thermal expansion coefficient increased from 7.6 × 10 − 6 K − 1 to 9.2 × 10 − 6 K − 1 between room temperature and 1200 °C, while thermal diffusivity and conductivity decreased due to enhanced phonon–phonon scattering and interfacial disorder. The specific heat capacity rose from 0.35 to 0.50 Jg −1 K − 1 , consistent with Debye behavior approaching the Dulong-Petit limit. The composite’s low thermal conductivity (~ 1.3 W/mK at 1200 °C) and moderate thermal expansion, indicating its excellent thermal stability and suitability for high-temperature insulation and thermal barrier coating applications.
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JOURNAL OF ALLOYS AND COMPOUNDS
·
2026
·
IF 6.7
Xiaofei Xu,Yijie Wu,Yuan Li,Lixia Ouyang,Jie Jiang
Ce-doped HfO₂ thin films exhibited excellent γ-ray radiation tolerance. • Stable ferroelectric performance was maintained after γ-ray irradiation. • Ce doping stabilized the ferroelectric orthorhombic phase. • Radiation-induced defect accumulation and domain-wall pinning were suppressed. • Ce doping significantly improved electrical reliability. HfO 2 -based ferroelectric thin films have emerged as promising candidates for next-generation non-volatile memories operating in extreme environments owing to their excellent CMOS compatibility, scalability, and robust ferroelectricity. However, ionizing radiation induces oxygen vacancies and charge traps that deteriorate polarization stability and device reliability, while the relationship between radiation-induced defects and polarization switching kinetics remains insufficiently understood. In this work, Hf 0.85 Ce 0.15 O 2 (HCO) ferroelectric thin films were fabricated via a sol–gel process, and their structural evolution, domain-switching kinetics, and memory reliability were systematically investigated under 60 Co γ-ray total ionizing dose (TID) irradiation ranging from 0 to 1000 krad(Si). The HCO films maintained a stable ferroelectric phase after irradiation, with the remanent polarization ( P r ) exhibiting only a slight variation from 19.914 to 20.107 μC cm −2 and the coercive field ( E c ) increasing marginally from 1.418 to 1.465 MV cm −1 . Piezoresponse force microscopy (PFM) confirmed reversible domain switching throughout the irradiation process, while kinetic analysis based on the Merz model revealed that the activation field increased only from 9.49 to 10.07 MV cm −1 (≈6%), indicating that domain-wall mobility was well preserved. Moreover, the leakage current density remained within the order of 10 −10 –10 −8 A cm −2 , accompanied by excellent electrical reliability. XPS analysis revealed only limited changes in the Ce valence state and oxygen chemical environment after irradiation, consistent with the overall structural and ferroelectric stability of the films. Based on these results, the stable Ce–O coordination is proposed to help maintain local lattice stability and mitigate the influence of irradiation-induced perturbations on polarization switching. This work provides new insights into the radiation-stability mechanism of HfO 2 -based ferroelectrics and offers a promising strategy for the design of highly reliable ferroelectric memories for aerospace and nuclear electronics.
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JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
·
2023
·
IF 5.7
Wei Zhou,Yutong Ren,Zhipeng Sun,Ling He,Ling Pan,Peng Xiao,Yang Li
High-temperature molten silicate deposit corrosion has become a critical factor for the failure of thermal barrier coatings. In this work, promising ytterbium hafnate ceramics with different HfO 2 content were prepared by solid-phase reaction, and the effect of HfO 2 content on Fe-containing silicate corrosion behavior of ytterbium hafnate ceramics was investigated. The evolution of HfO 2 content showed negligible influences on reaction products and corrosion mechanism. The attack of Fe-containing silicate melts on the ceramic led to the formation of a reaction layer consisting of apatite, fluorite, and garnet. This layer plays a critical role in preventing further penetration of the melts. However, ytterbium hafnate ceramics with lower HfO 2 content showed better resistance to melt attack.
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高影响因子
Advanced Science
·
2025
·
IF 14.1
Jiawei Gu,Qiongle Peng,Xuanqi Zhong,Yi Zheng,Zhiqiang Ma,Xiaoxian Song,Ruihuan Zhang,Bao Liu,Yanhu Zhang,Zhengbao Yang
The pursuit of multifunctional sensors has intensified due to their potential for integrated, efficient operation. However, realizing a flexible material that combines simplicity in the fabrication process with high performance and multifunctionality remains a formidable challenge. In this study, a multi-interface heterostructured nanofiber membrane composed of Polyvinylidene fluoride (PVDF), HfO 2 , and nano-copper is fabricated, leveraging the synergistic interplay of piezoelectric and piezo-phototronic effects for flexible, self-powered sensing. The incorporation of hafnium oxide (HfO 2 ) and nano-Cu enhances the crystallinity of the piezoelectric β -phase and improves the dielectric properties, substantially boosting electromechanical performance. The resultant piezoelectric sensor achieves an output voltage of 15V and maintains stability over 5000 cycles at 5 Hz, enabling precise detection of human motions. Meanwhile, the PVDF/HfO 2 -based photodetector exhibits broadband sensitivity (from near-UV to near-IR), high photoresponsivity (5.67 mA W −1 ), high detectivity (4.14×10 11 Jones), and rapid response (600 µs rising, 53 µs falling). Critically, the device demonstrates a 28.6% current enhancement under simultaneous light and pressure, highlighting a strong piezo-phototronic effect. This work presents a multifunctional fiber film for dual-mode sensing (pressure & light), with promising applications in wearable electronics and aerospace systems. Its straightforward fabrication and high performance offer a viable pathway toward next-generation, flexible, self-powered sensors.
研究领域:
材料科学
·
柔性电子学
·
传感器与探测器
·
纳米技术
·
光电子学
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高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2026
·
IF 6.7
Yongguang Xiao,Jibo Xiao,Ningjie Ma,Wei Zhang,Yujie Xiao,Gang Li,Minghua Tang
In this study, Sm-doped HfO 2 (Hf 1- x Sm x O 2 ) thin films on Pt/TiN/SiO 2 /Si substrates were fabricated using chemical solution deposition (CSD) method. The effects of Sm doping concentration on the microstructure and ferroelectric properties of Hf 1- x Sm x O 2 films were systematically investigated. Grazing-incidence X-ray diffraction (GIXRD) analysis and ferroelectric property measurements of the polycrystalline Sm:HfO 2 films with thicknesses ranging from 60 to 88 nm, revealed that samples doped with 2.50% Sm exhibited optimal ferroelectric characteristics with a residual polarization ( P r ) of 15.96 µC/cm 2 and a coercive field ( E c ) of 1.13 MV/cm after annealing at 800℃. Interestingly, the 2.50% Sm-doped sample also demonstrates excellent endurance and retention properties, sustaining over 10 8 switching cycles without breakdown. Furthermore, density functional theory (DFT) calculations were conducted to elucidate the regulation mechanism of doping samarium on the ferroelectric properties of HfO 2 films. The well consistency of the computational results and experimental observations, indicating that samarium doping is a feasible strategy for enhancing the ferroelectric properties of hafnium oxide films.
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ACS Applied Materials & Interfaces
·
2026
·
IF 7.8
Ma Bingchuang,Xu Zijian,Cao Xinxin,Li Xingwen,Han Guifang,Li Tianhao,Song Yujie
Flexible HfO 2 /SiC composite nanofibrous membranes were fabricated via a polymer-derived ceramic strategy by incorporating HfO 2 nanocrystals into a SiC matrix. The optimized membrane exhibits a tensile strength of 1.97 MPa, a static load-bearing capability of approximately 3800 times its own weight, and excellent cyclic bending durability, maintaining Δ R / R 0 below 3% after 1.6 × 10 4 cycles under 180 ° repeated bending. These results demonstrate its robust mechanical stability under both static loading and repeated bending deformation. Concurrently, the membrane achieves a low thermal conductivity of 0.1513 W·m −1 ·K −1 and a high infrared emissivity of ∼0.95. When subjected to direct exposure to a 1200 ° C flame, a 2.5 mm-thick membrane exhibits a backside temperature of only 172.6 ° C. The measured temperature-difference sustainability per unit thickness is 1.19 × 10 5 ° C·s·mm −1 under prolonged thermal exposure, which is 1.6 times that of conventional ceramic, fibrous, and aerogel insulators. Moreover, molecular dynamics simulations provide further evidence that the incorporation of HfO 2 has a reinforcing effect. These results highlight the potential of HfO 2 /SiC nanofibrous membranes for lightweight thermal protection applications under extreme environments.
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高影响因子
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
·
2023
·
IF 5.7
Yulan Yu,Guanghui Feng,Yujun Jia,Hejun Li
In this work, AlN whisker-reinforced (Zr, Hf)O 2 coating was prepared on SiC coated carbon/carbon composites by sol-gel and plasma spraying methods. Its cyclic ablation resistance was evaluated using an oxyacetylene torch with a heat flux of 2.38 MW/m 2 . After ablation, the coating showed apparently decreased crack sizes and quantity as compared with the one without AlN whisker addition, pointing out its better crack tolerance. Moreover, the coating had a thinner oxidized region based on the linear ablation rate (−0.042 µm/s), greatly lower than that of pure oxide coating (−0.922 µm/s). After detailed observation and characterization, probable protection mechanism was proposed.
研究领域:
材料科学
·
航空航天工程
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高影响因子
CORROSION SCIENCE
·
2022
·
IF 7.72
Wanbo Hou,Tao Feng,Xiangyuan Meng,Xinhao Shi,Mingde Tong,Hejun Li,Hongjiao Lin
The ablation resistance of C f /HfC PIP -SiC CVI composites was tested under an oxyacetylene flame. After ablation, many SiO 2 nanowires were in-situ grown in the edge region. From the edge region to the transition region, the melting behaviors of SiO 2 nanowires was gradually intensified, and finally, they completely transformed into SiO 2 glass. At the border of the central region and the transition region, the HfO 2 grains were gradually precipitated from the SiO 2 glass and formed a tubular structure. By comparing the ablation behaviors at different temperatures and times, the ablation mechanisms of C f /HfC PIP -SiC CVI composites was investigated systematically.
研究领域:
材料科学
·
航空航天工程
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高影响因子
CERAMICS INTERNATIONAL
·
2026
·
IF 6
Chunlin Wang,Hongzhao Xu,Shubo Xu,Wuju Wang,Yanchun Zhou,Xinghong Zhang,Wenbo Han,Changqing Hong
Oxide aerogels are promising as high-efficiency thermal insulation materials under extreme conditions owing to their low density, high porosity, large specific surface area, and ultralow thermal conductivity. However, their limited temperature resistance, volumetric changes during crystallisation and phase transitions, hinder their widespread application. To overcome this bottleneck, a novel strategy to retard the crystallisation and enhance the thermal stability of HfO 2 aerogel through the controlled incorporation of Si and Y was proposed. HfO 2 and ternary HfO 2 –Y 2 O 3 –SiO 2 (HYS) aerogels were synthesised via sol–gel method. The HfO 2 aerogel crystallised below 600 °C and underwent sintering at 1200 °C. Conversely, the HYS aerogel comprised low-crystallinity Y 2 Hf 7 O 17 nanocrystals after heat treatment at 900 °C, demonstrating a large specific surface area of 310.23 m 2 /g. The dopant elements were found to effectively inhibit sintering, enabling the HYS aerogel to retain a significantly large specific surface area of 48.72 m 2 /g even after heat treatment at 1200 °C. Y 2 Hf 7 O 17 exhibited a minimum thermal conductivity of 0.89 W·m −1 ·K −1 , providing the HYS aerogel with superior high-temperature thermal insulation performance. Furthermore, the comparatively lower linear shrinkage during the high-temperature heating process revealed HYS as a promising novel thermal insulation material for extreme environmental applications. This study expands on the oxide aerogel system and provides valuable guidance for component selection and design strategies for high-thermal-stability oxide aerogels.
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高影响因子
CERAMICS INTERNATIONAL
·
2022
·
IF 5.532
Yuan Liu,Weiwei Liu,Yang Zhou,Jingbo Chen,Zhiguo Wang,Wen Du,Jianhui Wen,Jun Cao,Dou Zhang
To investigate the influence of modification of ceramic fillers on the dielectric properties of polymer-based composites, TiO 2 and core-shell structured TiO 2 @HfO 2 nanowires were synthesized, and investigated in this study. TiO 2 nanowires/polyvinylidene fluoride (PVDF) and TiO 2 @HfO 2 nanowires/PVDF nanocomposites were prepared using the solution casting method. The experimental results showed that the TiO 2 @HfO 2 nanowires/PVDF composites had improved dielectric properties compared with that of the TiO 2 nanowires/PVDF composites. Owing to the enhanced interfacial polarisation by the multilevel interface, the composites with 10 wt % TiO 2 @HfO 2 nanowires achieved the highest permittivity of 12.56 at 1 kHz, which was enhanced by ∼72% compared to the PVDF matrix. The electric field was evenly distributed by building the fillers with a gradient dielectric constant. The characteristic breakdown strength of the composite with 5 wt % TiO 2 @HfO 2 reached 377.76 kV/mm, compared with that of 334.37 kV/mm for the composite with 5 wt % TiO 2 nanowires. This study initiated a novel strategy for preparing dielectrics with high dielectric constant and improved breakdown strength.
研究领域:
材料科学
·
电气工程
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高影响因子
SENSORS
·
2025
·Vol. 25
·期 20
·6429
·
IF 3.5
Luqi Yao,Yunfang Jia
In the pursuit of advanced non-volatile memory technologies, ferroelectric memristors have attracted great attention. However, traditional perovskite ferroelectric materials are hampered by environmental pollution, limited applicability, and the complexity and high cost of conventional vacuum deposition methods. This has spurred the exploration of alternative materials and fabrication strategies. Herein, a flexible Pt/Zr: HfO2(HZO)/graphene oxide (GO)/mica memristor is successfully fabricated using the total solution-processed method. The interfacial oxygen competition mechanism between the HZO layer and the GO bottom electrode facilitates the formation of the HZO ferroelectric phase. The as-prepared device exhibits a switching ratio of approximately 150 and can maintain eight distinct resistance levels, and it can also effectively simulate neural responses. By integrating the ferroelectric polarization principle and the piezoelectric effect of HZO, along with the influence of GO, the performance variations of the as-prepared device under mechanical and thermal influences are further explored. Notably, Morse code recognition is achieved by utilizing the device’s pressure properties and setting specific press rules. The as-prepared device can accurately convert and store information, opening new avenues for non-volatile memory applications in silent communication and promoting the development of wearable electronics.
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高影响因子
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