Applied Materials Today
·
2026
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IF 7
Tongtong Kang,Changyong Lan,Shuren Zhou,Xinyi Luo,Xiaoqi Gao,Haodong Fan,Yi Yin,Chun Li
1T’-MoTe 2 /flat-Si and 1T’-MoTe 2 /pyramidal-Si heterojunction photodetectors were in-situ fabricated. • The MoTe 2 /pyramidal-Si heterojunction photodetector exhibits 31% enhancement in responsivity compared with the MoTe 2 /flat-Si counterpart. • The MoTe 2 /pyramidal-Si heterojunction photodetector exhibits broadband spectral response (400-1550 nm), high responsivity (451 mA/W), high specific detectivity (7.8 × 10 11 Jones), and fast response (4 μs). • An 8 × 8 photodetector array is fabricated and demonstrates good imaging capability. Mixed van der Waals (vdW) heterojunction photodetectors have attracted considerable attention in recent years due to synergistic effects of component materials with different dimensions, which enable enhanced performance. Among these mixed vdW heterojunctions, two-dimensional (2D) material/Si heterojunction photodetectors hold great promise, combining the superior optoelectronic properties of 2D materials with the mature processing technology of Si. In this work, we report the fabrication of a 1 T′-MoTe 2 /pyramidal-Si heterojunction photodetector via sputtering and subsequent in-situ thermal conversion. Compared with the MoTe 2 /flat-Si counterpart, the MoTe 2 /pyramidal-Si photodetector shows a 31% enhancement in responsivity, reaching 451 mA/W at 820 nm. In addition, it exhibits excellent photodetection performance in terms of specific detectivity (7.8 × 10 11 Jones at 850 nm under zero bias), broadband spectral response (400–1550 nm), large linear dynamic range (162 dB), and fast response (4 μs at 850 nm under a bias voltage of −5 V). An 8 × 8 photodetector array is fabricated and demonstrates good imaging capability. Our work provides a novel approach for developing high-performance mixed vdW heterojunction photodetectors. Download: Download high-res image (207KB) Download: Download full-size image
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高影响因子
ENERGY
·
2021
·
IF 7.147
Yi-Jie Zhang,Yi-Jun Gao,Xiaoge Wang,Qin Ye,Ya Zhang,Yu Wu,Shu-Han Chen,Bo Ruan,Dean Shi,Tao Jiang,Fang-Chang Tsai,Ning Ma
Sodium-ion batteries (SIBs) are highly potential for next-generation electrochemical energy storage because of their abundant resources and low prices. Transition metal dichalcogenides (TMDCs) have an excellent capacity, high electrical conductivity, and diverse structures. However, its volume expansion and tendency to restack during charge/discharge cycles lead to inferior electrochemical properties, limiting its development in the battery field. Herein, we synthesized MoO 2 /NC rods covered with MoTe 2 nanosheets on the surface (MoTe 2 @MoO 2 /NC) by a high-temperature solid-phase synthesis method based on Mo-MOF a sacrificial template for sodium-ion batteries. The MoO 2 core enhances the electron transfer efficiency as a conductive backbone and prevents the volume expansion of MoTe 2 nanosheets. Meanwhile, the MoTe 2 nanosheets are tightly wrapped around the MoO 2 core, significantly reducing the ion diffusion path. Furthermore, the C and N doped substrates with conductivity ensure the integrity of the structure and enhance the conductivity of the electrodes. Benefiting from these advantages, MoTe 2 @MoO 2 /NC delivered a high electrochemical performance with high capacity (∼463.9 mAh g −1 ), superior fast-charge discharge ability (∼294.7, and 258.3 mAh g −1 at 5, and 10 A g −1 , respectively). Even at a high current density of 1 A g −1 , the specific capacity was maintained at about 328.3 mAh g −1 after 100 cycles.
研究领域:
材料科学
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储能
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电化学
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纳米材料
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高影响因子
Advanced Materials Interfaces
·
2022
·Vol. 9
·期 12
·2101863
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IF 6.389
Yuan Liu,Xiaokun Wen,Wenyu Lei,Li Yang,Pengzhen Zhang,Yuhui Zhang,Haixin Chang,Wenfeng Zhang
Besides the widely investigated potential as alternative to silicon in microelectronics, semiconducting 2D transition metal dichalcogenides (TMDs) also show appealing prospects in thin film transistors (TFTs)-based applications, while still suffer from insufficient demonstration. Herein, the authors systematically report high-performance and low-power chemical vapor deposition-grown polycrystalline molybdenum ditelluride (MoTe 2 ) TFTs with solution-processed ternary Hf 0.5 Zr 0.5 O 2 /HfAlO 2 high-k dielectric. Benefitting from the optimized high quality HfAlO 2 film synthesis and proper postannealing treatment, the constructed MoTe 2 TFTs exhibit a high mobility ≈27.24 cm 2 V −1 S −1 , a current on/off ratio ≈6.43 × 10 5 , threshold voltage ≈−3.27 V, and subthreshold swing (SS) value ≈152.4 mV dec −1 , respectively. Moreover, by supplementing another solution-processed layer of ferroelectric Hf 0.5 Zr 0.5 O 2 to form double layer of HfAlO 2 /Hf 0.5 Zr 0.5 O 2 dielectric, the device performance can be further improved with an ignorable hysteresis, increased mobility of ≈55.53 cm 2 V −1 S −1 , and significantly reduced SS value of ≈110.16 mV dec −1 , respectively. The current investigation offers a feasible strategy to fabricate high-performance and low-power MoTe 2 TFTs for potential TMDs-based TFTs applications.
研究领域:
材料科学
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半导体器件
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薄膜技术
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纳米电子学
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高影响因子
Science China-Materials
·
2021
·Vol. 64
·期 9
·2202-2211
·
IF 8.273
Wang Yaqian,Shen Yongli,Xiao Xiong,Dai Linxiu,Yao Shuang,An Changhua
Metastable 1T′ MoTe 2 has attracted much attention as a cost-effective electrocatalyst for hydrogen evolution reaction (HER) in recent years. However, few studies were done over common stable 2H phase because it often exhibits inferior performance. Herein, stable 2H MoTe 2 with S-doped Te vacancies has been synthesized by one-step telluride conversion of 1T MoS 2 at 700°C under Ar/H 2 atmosphere. It is demonstrated that the synergistic effect of S-doping and Te vacancies changes the electronic structures of the catalyst. Density functional theory (DFT) studies show that plentiful electrons accumulate on the surface S atoms in S-doped Te vacancies of 2H MoTe 2 catalyst, which may be as active sites to promote HER. Moreover, the as-synthesized catalyst can be directly used as working electrode, and realizes current density of 100 mA cm −2 at overpotential of 217 mV with Tafel slope of 94 mV dec −1 . This work stimulates intensive studies on the activation of inert phase of other nanocatalysts towards various reactions.
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高影响因子
Advanced Science
·
2026
·
IF 14.1
Yao Yao,Lulu Cao,Xiaolin Sun,Qiang Wang,Zhiyang Xu,Tianrui Zhai,Yan Zhao,Yijian Jiang,Zhanguo Li,Yinzhou Yan
Fabrication of cross-scaled ultrasensitive surface-enhanced Raman scattering (SERS) substrates ranging from nanogaps for efficient localized surface plasmon resonances (LSPRs) to mm 2 -size for easy operation is challenging. Here, we propose femtosecond-laser-induced periodic phase-transition ( fs -LIPPT) of 1T’-MoTe 2 nanograting template, inducing Au nanostructures for frequency-shift digital-SERS immunoassay. The interference between the incident transverse electric wave and propagation wave in the 2H-MoTe 2 /SiO 2 -interlayer waveguide triggers the highly homogeneous periodic 1T’ phase-transition pattern. The Au nanoparticles (Au NP s) are subsequently reduced at the 1T’ regions in chloroauric acid solution, forming a subwavelength Au NP s@1T’-MoTe 2 nanograting with 295.0 ± 8.1 nm in period. The Fano resonances by coupling the narrow-band guided-mode resonances supported in the 1T’-MoTe 2 /SiO 2 -interlayer nanograting with the broadband LSPRs in Au NP s promote optical localization, achieving the superior performance with a limit of detection in 10 −14 m and a SERS performance factor of 7.5 × 10 6 for rhodamine 6G (R6G). A paradigm of frequency-shift digital-SERS immunoassay for serological diagnosis is established using the R6G-labeled Au NP s@1T’-MoTe 2 nanograting conjugated with immunoglobulin G of rheumatoid arthritis, by which the discrimination accuracy is unexpectedly close to unity. The present work provides a novel protocol for SERS serum immunoassay, opening opportunities for early diagnosis and accurate prognosis of autoimmune diseases by blood test in the future.
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PubMed
高影响因子
CERAMICS INTERNATIONAL
·
2024
·
IF 5.1
Lifeng Zhang,Yaoxin He,Jiaxi Bai,Fenghua Liu,Robert Bradley,Weiping Wu,Xingang Kong,Shouwu Guo
Addressing the slow electrochemical kinetics and electrode pulverization of sodium ion batteries (SIBs) is needed to continuously develop advanced anode materials . Molybdenum telluride (MoTe 2 ) is considered promising for SIBs anodes due to its wider interlayer distance , faster electronic conductivity , and weaker interlayer force. However, the nanoparticle aggregation and layered structure collapse caused by bond breakage weaken its inherent advantages for excellent sodium storage performance. Herein, hierarchically nanostructured regulation and surface coating of MoTe 2 based SIB anodes are simultaneously achieved by employing Mo-PDA as precursors through a concise and effective method containing chelation, preoxidation and tellurization. The microstructure and morphology of MoTe 2 /C composites can be facilely regulated by controlling the chelation time and tellurization temperature. The as-synthesized MoTe 2 /C-6h-600 electrode exhibits encouraging Na + storage performance, which delivers discharge capacitances of 290.7 mAh g −1 (0.1 A g −1 ) and 161.1 mAh g −1 (1.0 A g −1 ) after hundreds and thousands cycles, respevtively. Furthermore, the assembled full cell of MoTe 2 /C-6h-600//NVP delivers a stable reversible capacitance of 103 mAh g −1 , which is promising for future practical applications.
研究领域:
材料科学
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电化学
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高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
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2023
·
IF 6.2
Lifeng Zhang,Jiaxi Bai,Yaoxin He,Bangmei Lu,Liyue Xue,Xingang Kong,Shouwu Guo
Developing flexible and binder-free electrodes with superior electrochemical performance is the critical key for flexible electronics and wearable devices . MoTe 2 , a typical two-dimensional (2D) layered material, has emerged as an attractive anode material for sodium ion batteries (SIBs) because its abundant active sites and rapid Na + transfer and storage. In this work, a series of flexible MoTe 2 /C nanofibers (NFs) are successfully synthesized via a facile electrospinning process with tellurization treatment. As binder and current collector-free anodes, the optimized MoTe 2 /C-600 shows significantly enhanced Na + storage performance, which delivers a high reversible capacity of 294 mAh g −1 after 100 cycles at 0.1 A g −1 and an ultra-long time cycling performance of 5000 cycles at 1.0 A g −1 . The as-prepared MoTe 2 /C NFs possess double merits of well 1D conductive paths and 3D ion diffusion channels, which effectively boost the electron/Na + transfer. Meanwhile, its excellent flexibility and mechanical strength greatly enhance the cycling stability. More importantly, in-situ X-ray diffraction and ex-situ transmission electron microscope were employed to demonstrate its structure evolution, revealing that the high capacity of MoTe 2 /C-600 results from the cooperation of Na + intercalation and conversion reaction. The findings of this study provide a better understanding on the sodium storage mechanism of MoTe 2 -based flexible electrodes.
研究领域:
材料科学
·
能源存储
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DOI
高影响因子
ADVANCED MATERIALS
·
2024
·Vol. 37
·期 23
·2404013
·
IF 27.4
Yunxia Hu,Jun Wang,Mohsen Tamtaji,Yuan Feng,Tsz Wing Tang,Mohammadreza Amjadian,Ting Kang,Mengyang Xu,Xingyi Shi,Dongxu Zhao,Yongli Mi,Zhengtang Luo,Liang An
Van der Waals junctions hold significant potentials for various applications in multifunctional and low-power electronics and optoelectronics. The multistep device fabrication process usually introduces lattice mismatch and defects at the junction interfaces, which deteriorate device performance. Here the layer engineering synthesis of van der Waals homojunctions consisting of 2H-MoTe 2 with asymmetric thickness to eliminate heterogenous interfaces and thus obtain clean interfaces is reported. Experimental results confirm that the homostructure nature gives rise to the formation of pristine van der Waals junctions, avoiding chemical disorders and defects. The ability to tune the energy bands of 2H-MoTe 2 continuously through layer engineering enables the creation of adjustable built-in electric field at the homojunction boundaries, which leads to the achievement of self-powered photodetection based on the obtained 2H-MoTe 2 films. Furthermore, the successful integration of 2H-MoTe 2 homojunctions into an image sensor with 10 × 10 pixels, brings about zero-power consumption and near-infrared imaging functions. The pristine van der Waals homojunctions and effective integration strategies shed new insights into the development of large-scale application for two-dimensional materials in advanced electronics and optoelectronics.
研究领域:
光电子学
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纳米电子学
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二维材料
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半导体器件
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图像传感技术
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DOI
高影响因子
Nature Communications
·
2021
·Vol. 12
·期 1
·1-10
·
IF 14.919
Zhang Xiankun,Liu Baishan,Gao Li,Yu Huihui,Liu Xiaozhi,Du Junli,Xiao Jiankun,Liu Yihe,Gu Lin,Liao Qingliang,Kang Zhuo,Zhang Zheng,Zhang Yue
The applications of any two-dimensional (2D) semiconductor devices cannot bypass the control of metal-semiconductor interfaces, which can be severely affected by complex Fermi pinning effects and defect states. Here, we report a near-ideal rectifier in the all-2D Schottky junctions composed of the 2D metal 1 T′-MoTe 2 and the semiconducting monolayer MoS 2 . We show that the van der Waals integration of the two 2D materials can efficiently address the severe Fermi pinning effect generated by conventional metals, leading to increased Schottky barrier height. Furthermore, by healing original atom-vacancies and reducing the intrinsic defect doping in MoS 2 , the Schottky barrier width can be effectively enlarged by 59%. The 1 T′-MoTe 2 /healed-MoS 2 rectifier exhibits a near-unity ideality factor of ~1.6, a rectifying ratio of >5 × 10 5 , and high external quantum efficiency exceeding 20%. Finally, we generalize the barrier optimization strategy to other Schottky junctions, defining an alternative solution to enhance the performance of 2D-material-based electronic devices.
研究领域:
材料科学
·
纳米技术
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半导体物理
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器件工程
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PubMed
高影响因子
危险品化学品经营许可证（带存储）