Nanomaterials
·
2022
·Vol. 12
·期 9
·1575
·
IF 5.719
Fujin Li,Lin Bo,Ruipeng Zhang,Sida Liu,Junliang Zhu,Min Zuo,Degang Zhao
Thermoelectric materials can directly convert heat and electricity, which is a kind of promising energy material. In view of cost and mechanical properties, polycrystalline SnSe material with highzTvalue is greatly desired. In this study, polycrystalline Sn0.94Pb0.01Se1-xTexsamples were prepared by the vacuum melting–hot pressing sintering method. Sn vacancies, Pb and Te atoms were simultaneously introduced into the polycrystalline SnSe. The power factor of Sn0.94Pb0.01Se1-xTexsamples was decreased, which could be attributed to the generation ofn-type semiconductor SnSe2. In addition, the phonons were strongly scattered by point defects and dislocations, which led to the decrease of thermal conductivity—from 0.43 Wm−1K−1to 0.29 Wm−1K−1at 750 K. Finally, the polycrystalline Sn0.94Pb0.01Se0.96Te0.04sample achieved the maximumzTvalue of 0.60 at 750 K.Keywords:SnSe;nanoparticles;zT;thermoelectric;TEM
研究领域:
材料科学
·
能源工程
✓ 已验证
DOI
PubMed
高影响因子
JOURNAL OF NANOPARTICLE RESEARCH
·
2015
·Vol. 17
·期 7
·1-7
·
IF 2.184
Wu Yimin,Qiao Xvsheng,Fan Xianping,Zhang Xianghua,Cui Shuo,Wan Jun
In this study, large-scale synthesis of Cu 3 SbSe 4 and Cu 3 Sb 0.98 Sn 0.02 Se 4 nanoparticles with a narrow size distribution was achieved through a rapid-injection route. These nanoparticles showed a monodisperse and quasi-spherical morphology. The Cu 3 SbSe 4 and Cu 3 Sb 0.98 Sn 0.02 Se 4 nanoparticle-based bulk materials were then prepared by hot-pressed sinter of the nanoparticles, and their thermoelectric performances were systematically studied. Due to the reduced lattice thermal conductivity from enhanced phonon scattering at the grain interfaces of the bulk materials, the maximum ZT value of the Cu 3 Sb 0.98 Sn 0.02 Se 4 bulk materials reached 0.50 at 575 K.
研究领域:
材料科学
·
纳米技术
·
热电材料
✓ 已验证
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2025
·
IF 5.6
Lijie Shi,Jun Ding,Xiangbin Chen,Xiang Qu,Zhiquan Chen,Man Jiang
Low-cost preparation of thermoelectric materials is crucial for reducing energy consumption. In this study, we prepared the nanopolycrystalline SnSe ceramic by combining the hydrothermal and cold sintering process (CSP) at a relatively low temperature of 170 °C from 300 MPa to 510 MPa. XRD analyses indicated that a pronounced preferential orientation of the cold sintered SnSe along the (h00) directions. SEM observations showed that a well-crystallized layered structure was formed. All SnSe samples exhibit remarkably low thermal conductivity of 0.3 Wm −1 K −1 at 773 K. This low thermal conductivity can be attributed to the use of ethanol as a transient liquid phase and the application of high pressure, which promotes the rearrangement of nanopolycrystals and introduces high densities of dislocations and stacking faults in SnSe. A maximum ZT value of 1.35 at 773 K was achieved for the 405 MPa sintered sample. This study provides a cost-effective and efficient strategy for the preparation of polycrystalline SnSe thermoelectric material.
研究领域:
材料科学
·
能源材料
✓ 已验证
产品关联
DOI
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2024
·
IF 13.3
Juan Bi,Yuxin Liang,Yang Bai,Baoning Cui,Zhaopeng Lu,Bangsheng Li
Some studies have proven the effectiveness of high-entropy alloying in reducing lattice thermal conductivity; however, the synchronous degradation in carrier mobility limits the thermoelectric properties of high-entropy materials. Herein, we present a series of medium-entropy oxides (Sr 1/3 Ba 1/3 Ca 1/3 ) 1-x La x TiO 3 (x = 0.05, 0.1, 0.15) with different levels of La doping, breaking the trade-off between carrier and phonon transport. The medium-entropy design helps keep the carrier mobility at a moderate level while modulating the carrier concentration through La 3+ doping, thereby yielding a peak power factor value of 1842 μW/(m⋅K 2 ) at 773 K. Meanwhile, the incorporation of nano-micro-porous structure and medium entropy effect leads to a significant reduction in lattice thermal conductivity, reaching 2.3 W/(m⋅K) at 1073 K. Consequently, a ZT max value of 0.67 is obtained for the MEP-10La sample at 1073 K, which is one of the state-of-the-art ZT values reported for the SrTiO 3 -based materials. The present work provides a viable approach for the development of thermoelectric materials with enhanced performance.
研究领域:
材料科学
·
热电学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2023
·Vol. 34
·期 6
·1-8
·
IF 2.8
Xue Lisha,Wang Yuan,Zhu Shuangmei,Mao Qianhui,Jia Xiaopeng,Zhang Yuewen
We have synthesized the quaternary copper selenide Bi x Cu 2−3 x Se 0.95 Te 0.05 compounds by high-pressure followed with ball milling method and investigated their thermoelectric properties. The crystal structure and element doping are characterized and verified by the X-ray diffraction, high-resolution transmission electron microscope and X-ray photoelectron spectroscopy. Compared with other samples, the samples with x = 0.001 and 0.002 have larger layered grain size and smaller grain boundary. This may lead to the reduction of resistivity in a wide temperature range, thus realizing the optimization of electronic characteristics. The dislocation-induced lattice strain fluctuations may cause the abrupt thermal conductivity, which is contrary to the previous results. Eventually, a peak value of zT = 1.03 at 873 K is obtained for Bi 0.001 Cu 1.997 Se 0.95 Te 0.05 and Bi 0.002 Cu 1.994 Se 0.95 Te 0.05 .
研究领域:
材料科学
·
物理学
✓ 已验证
产品关联
DOI
高影响因子
Advanced Electronic Materials
·
2024
·Vol. 10
·期 6
·2300809
·
IF 5.3
Abdul Basit,Jiwu Xin,Yubo Luo,Ji-Yan Y. Dai,Junyou Yang
Lead-free polycrystalline manganese telluride holds great potential in the development of waste heat recovery due to its fascinating physical properties. However, the poor thermoelectric (TE) performance in the p-type MnTe alloys always results from their inferior carrier concentration, leading to low power factor and high thermal conductivity which restrict the overall thermoelectric performance. In this work, the problem is solved by decoupling its electrical and thermal transports through the hole donor Ge-deficiency in MnTe + x mol.% GeTe (0 ≤ x ≤ 4) compounds. Intrinsically, extra GeTe in MnTe + x mol.% GeTe compound offers free charge carriers due to a narrow bandgap comparatively, realizing not only a full assessment of stimulated electrical performance but also an enhanced power factor. Moreover, benefiting from the nano-precipitates and tweed microstructures, the lattice thermal conductivity effectively reduces due to the intensive phonon scattering accordingly. Ultimately, a maximum ZT of ≈1.2 at 873 K in the 3 mol.% GeTe doped MnTe sample is realized.
研究领域:
材料科学
·
能源工程
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2018
·
IF 3.779
Dongyang Wang,Xiao Zhang,Yong Yu,Lin Xie,Jinfeng Wang,Guangtao Wang,Jiaqing He,Yuling Zhou,Qiantao Pang,Jianwei Shao,Li-Dong Zhao
In this work, we report that the high performance of SnTe could be realized by enhancing electrical transport properties (power factor) and reducing thermal conductivity through stepwisely introducing elements of Sb, In and Se. We found that Sb and In co-doping can enhance Seebeck coefficients in the broad temperature range via optimizing carrier density and introducing resonant state, respectively. Moreover, nanostructures could be formed when the Sb content beyond the solubility limit in SnTe matrix, which coupled with point defects from In and Se alloying result in a very low (lattice) thermal conductivity through the enhanced phonon scattering from defects and grain boundaries. A peak ZT ∼1.0 at 923 K can be achieved with the enhanced power factor and reduced thermal conductivity. Accordingly, the average ZT value increases from ∼0.20 for undoped SnTe to ∼ 0.60 for multiple-doped SnTe (Sn 0.823 Sb 0.17 In 0.007 Te 0.98 Se 0.02 ) over 300–923 K, generating a high calculated conversion efficiency ∼ 11%. Present results indicate the high performance of SnTe can be obtained through stepwisely optimizing strategy in both electrical and thermal transport properties.
研究领域:
材料科学
·
热电转换
✓ 已验证
产品关联
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2024
·
IF 18.5
Kangpeng Jin,Haonan Nie,Fengxian Gao,Jiang-Jiang Ma,Mingfang Shu,Xi Yan,Zhen-Hua Ge,Xiao Gao,Weiyun Zhao,Ming Liu,Yuan Yu,Jie Ma,Biao Xu,Liangwei Fu
Mg 3 (Sb,Bi) 2 alloys offer exceptional near-room temperature thermoelectric (TE) performance comparable to Bi 2 Te 3 . However, the low carrier mobility due to Mg vacancies and relatively high lattice thermal conductivity adversely affect overall TE performance. Herein, carrier mobility and thermal conductivity of Mg 3 (Sb,Bi) 2 are decoupled by modulating both the phase interface and grain boundaries through incorporating different sizes of iron (Fe). Ferromagnetic micrometer-sized Fe particles enhance the figure of merit ( ZT ) more than superparamagnetic nano-sized counterparts. Magnetic moments of Fe induce the charge density overlap near phase boundaries and ≈1 nm Fe interfacial layer lowers grain-boundary barriers, leading to sharply increased carrier mobility. Moreover, the additional magnon-phonon scattering reduces lattice thermal conductivity by over 40%. Consequently, Fe/Mg 3 (Sb,Bi) 2 composite achieves a high average ZT of 1.4 over room temperature to 573 K. The fabricated Mg 3 (Sb,Bi) 2 -CdSb module demonstrates a high conversion efficiency of 8.4% under a 275 K temperature gradient, among the best for Mg 3 (Sb,Bi) 2 -based modules. This work uncovers the role of thermo-electro-magnetic interactions in bolstering TE performance and inspires the development of low-cost, high-efficiency TE modules for low-grade heat recovery.
研究领域:
材料科学
·
物理学
·
能源科学
✓ 已验证
DOI
高影响因子
ACS Applied Energy Materials
·
2021
·
IF 6.024
Shuyao Li,Junhua Jiang,Zheng Ma,Yanqun Chen,Lanwei Li,Jianli Wang,Chao Wang
As we all know, the introduction of porous structure into the matrix is a very effective method to enhance the material’s thermoelectric performance. Herein, Er-doped Bi0.46Sb1.54Te3 bulk materials were successfully synthesized by high-energy ball milling and spark plasma sintering. The carrier mobility is enhanced and the carrier concentration is optimized by Er doping, thereby improving the electrical transport properties. Furthermore, the dispersed secondary phase nanoparticles and pores introduced by Er doping provide additional phonon scattering, which leads to the decreased lattice thermal conductivity. Finally, the Erx(Bi0.23Sb0.77)2–xTe3 (x = 0.02) sample shows a maximum ZT value of 1.21 at 350 K, and the average ZT value of 1.17 between 300–400 K is achieved.
研究领域:
材料科学
·
热电材料研究
✓ 已验证
产品关联
DOI
高影响因子
Small
·
2025
·
IF 12.1
Jie Huang,Kangpeng Jin,Chen Li,Hao Yang,Yiming Zhang,Xiyang Wang,Ming Huang,Zhen-Hua Ge,Liangwei Fu
Maximizing the average figure-of-merit ( ZT avg ) of thermoelectric (TE) materials is crucial for optimizing the module performance. Herein, this work enhances the ZT avg to 1.42 (298–673 K) in a n-type Mg 3 (Sb, Bi) 2 -based material by a stepwise optimization strategy. Specifically, Cr injects electron into Mg 3 Sb 0.8 Bi 1.19 Te 0.01 , which synergistically boosts carrier concentration and forms an electron accumulation layer at the interface. Meanwhile, lattice softening and interfacial scattering suppress lattice thermal conductivity. A peak ZT of 1.72 at 673 K and ZT avg of 1.30 over 298–673 K are achieved for Mg 3 Sb 0.8 Bi 1.19 Te 0.01 –1.5 wt.% Cr. Then, through grain refinement and Se doping instead of Te, a delicate equipoise is reached between the power factor and the electronic thermal conductivity. Eventually, the Mg 3 Sb 0.8 Bi 1.19 Se 0.01 –1.5 wt.% Cr sample obtains an outstanding ZT of ≈1.9 at 573 K and ZT avg of 1.42 over 298–673 K. The integrated two-pair full-Zintl YbZn 2 Sb 2 /Mg 3 (Sb, Bi) 2 module achieves a high conversion efficiency of 10.5% and power density of 0.37 W cm −2 simultaneously under a temperature difference of 370 K. More importantly, this module exhibits excellent thermal stability during a 10-day in situ test. This work provides new ideas for applications of full-Zintl modules to the recovery of waste heat.
研究领域:
材料科学
·
热电学
·
能量转换
·
固体物理
·
可持续能源
✓ 已验证
产品关联
DOI
PubMed
高影响因子
CERAMICS INTERNATIONAL
·
2020
·Vol. 47
·期 5
·6548-6553
·
IF 3.83
Chuangchuang Ruan,Hongzhang Song,Mengmeng Fan,Haoshan Hao,Shaohui Liu
Misfit-layered oxides Ca 3 Co 4 O 9+δ + z wt% SiC ( z = 0.00, 0.025, 0.05, 0.1, 0.2) samples were synthesized using solid-state sintering method and the effects of SiC nanoparticles diapersion on the thermoelectric properties were investigated. Thermoelectric properties of Ca 3 Co 4 O 9+δ + z wt% SiC ( z = 0.00, 0.025, 0.05, 0.1, 0.2) were investigated up to 923 K. Compared with pure sample, the electrical resistivity of SiC-added samples reduces, for Ca 3 Co 4 O 9+δ + z wt% SiC ( z = 0.00, 0.025, 0.05, 0.1, 0.2) ceramic samples with x ≤ 0.05, the electrical resistivity decreases with increasing SiC nanoparticles adding amounts. And, the electrical resistivity exists transition from semiconductor to metal conduction mechanism. While, the thermal conductivity also decreases due to the addition of SiC nanoparticles . As a result, the Ca 3 Co 4 O 9+δ + 0.2 wt% SiC sample had the lowest thermal conductivity of 1.47 W/Km at 923 K, which was 18.4% lower than that of the Ca 3 Co 4 O 9+δ sample. The ZT value of Ca 3 Co 4 O 9+δ + 0.05 wt% SiC can reach 0.218, which is 40.9% higher than the pure Ca 3 Co 4 O 9+δ sample.
研究领域:
材料科学
·
凝聚态物理
·
无机非金属材料
·
能源材料
✓ 已验证
DOI
高影响因子
Crystals
·
2025
·Vol. 15
·期 7
·622
·
IF 2.4
Haoyu Zhao,Junliang Zhu,Zhonghe Zhu,Lin Bo,Wenying Wang,Xingshuo Liu,Changcun Li,Degang Zhao
Cubic phase SnSe-based materials have great potential in the field of thermoelectricity due to their reduced carrier scattering, increased band degeneracy, and ultra-low lattice thermal conductivity. Nevertheless, systematic studies on the influence of element doping on the thermoelectric properties of cubic SnSe-based materials are still relatively scarce. To enrich the research in this field, this work investigates the effects of Ge doping on the phase composition, electrical and thermal transport properties of cubic Sn0.50Ag0.25Bi0.25Se0.50Te0.50thermoelectric materials. X-ray diffraction (XRD) analysis confirmed that the Ge-doped samples exhibited a single cubic phase structure, while scanning electron microscopy (SEM) and energy-dispersive spectroscopy (EDS) revealed a uniform distribution of elements within the samples. The results indicate that increasing the Ge doping content substantially enhances their electrical conductivity, albeit at the expense of elevated thermal conductivity. By optimizing the content of Ge-doping, the thermoelectric figure of merit (ZT) reached 0.74 at 750 K. Notably, while moderate Ge doping enhances electrical transport properties, excessive doping leads to a significant rise in thermal conductivity, ultimately constraining further thermoelectric performance gains.
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）