MATERIALS LETTERS
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2023
·
IF 3
Huaide Chen,Guojun Xu,Chenxin Jin,Jize Wu,Linwu Xiong,Xiaomin Li,Fugen Sun,Lang Zhou,Zhihao Yue
Silicon monoxide (SiO x , 0 < x < 2) has been limited in commercial applications due to its low electrical conductivity and large volume expansion effect. The existing method is to use liquid phase method for carbon coating treatment, but some problems such as uneven coating are still exist. Therefore, in this paper, C 2 H 2 is used as carbon source to coat SiO x material in a rotating chemical vapor deposition furnace to obtain hard carbon coated SiO x (SiO x @C) material. At the rate of 0.5C (1C = 2.1 A g −1 ), the discharge specific capacity of SiO x @C remained at 1116.8 mAh g −1 after 140 cycles, which is 539.8 mAh g −1 higher than SiO x .
研究领域:
材料科学
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能源存储
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DOI
高影响因子
Materials Science and Engineering B-Advanced Functional Solid-State Materials
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2023
·
IF 3.6
Qian Pan,Junhui Hu,Chengzhi Hu,Ying Yan
A sound absorption perlite brick coated with carbon nanotubes (CNTs)/perlite slurry was prepared by two kinds of Chemical Vapor Deposition (CVD) methods (one-step method and two step method) to develop an efficient sound absorption composite material in full frequency. The characterization results indicated that CNTs delivered by two-step method are denser and purer than that delivered by one-step method. Moreover, the grain sizes played an important role in the acoustic performance of sound absorption perlite brick. The average sound absorption coefficient of sound absorption perlite bricks decreased steadily and significantly with incremental grain size. In addition, the effects of CNTs on the acoustic performance of the materials were explored. The results showed that the sound absorption coefficients of the bricks coated with CNTs/perlite slurry were all over 0.7 when the frequency was above 500 Hz, and the highest value reached 0.96, indicating a positive influence of the CNTs coatings.
研究领域:
材料科学
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声学工程
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DOI
高影响因子
Nanomaterials
·
2023
·Vol. 13
·期 8
·1368
·
IF 5.3
Zixuan Wang,Yecheng Nie,Haohui Ou,Dao Chen,Yingqian Cen,Jidong Liu,Di Wu,Guo Hong,Benxuan Li,Guichuan Xing,Wenjing Zhang
Monolayer transition metal dichalcogenides (TMDs) have drawn significant attention for their potential applications in electronics and optoelectronics. To achieve consistent electronic properties and high device yield, uniform large monolayer crystals are crucial. In this report, we describe the growth of high-quality and uniform monolayer WSe2film using chemical vapor deposition on polycrystalline Au substrates. This method allows for the fabrication of continuous large-area WSe2film with large-size domains. Additionally, a novel transfer-free method is used to fabricate field-effect transistors (FETs) based on the as-grown WSe2. The exceptional metal/semiconductor interfaces achieved through this fabrication method result in monolayer WSe2FETs with extraordinary electrical performance comparable to those with thermal deposition electrodes, with a high mobility of up to ≈62.95 cm2V−1s−1at room temperature. In addition, the as-fabricated transfer-free devices can maintain their original performance after weeks without obvious device decay. The transfer-free WSe2-based photodetectors exhibit prominent photoresponse with a high photoresponsivity of ~1.7 × 104A W−1at Vds= 1 V and Vg= −60 V and a maximum detectivity value of ~1.2 × 1013Jones. Our study presents a robust pathway for the growth of high-quality monolayer TMDs thin films and large-scale device fabrication.Keywords:chemical vapor deposition;monolayer WSe2;transfer-free;transistor;photodetector
研究领域:
材料科学
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纳米技术
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电子学
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光电子学
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产品关联
DOI
PubMed
高影响因子
CARBON
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2023
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IF 10.9
Patrick Ryan Galligan,Yixin Xu,Tsz Wing Tang,Hongwei Liu,Mohsen Tamtaji,Yanguang Zhou,Zhengtang Luo
Hexagonal boron carbon nitride (hBCN) thin films with a wide range of carbon doping are synthesized in a chemical vapor deposition (CVD) process by varying 3 distinct precursors. Utilizing the optothermal method, the highest thermal conductivities of hBCN thin films is measured experimentally as 836 ± 312 W/m·K, for the hBCN with the highest carbon doping, surpassing the measured hexagonal boron nitride (hBN) conductivity of 462 ± 158 W/m·K. Moreover, we demonstrate that the electrical conductivity retains the insulative properties of hBN with lower carbon doping levels. Additionally, insights of how increasing amounts of carbon increase the conductivity by forming graphene like channels integrated into the hBN networks have been examined by molecular dynamics simulations. These simulations confirm a greater increase in high frequency phonon group velocities contribute to higher thermal conductivity, when aligning carbon rather than simply increasing the quantity of carbon. The aligned carbon channels are effective in overcoming the additional phonon scattering, that occurs especially in the LA mode , when adding carbon to the hBN network. By varying the carbon doping to maximize the thermal conductivity while minimizing the electrical conductivity , we have discovered an effective method of producing optimized hBCN thin films, which are ideal to be utilized in thermal interface material applications as a lower cost alternative to hBN.
研究领域:
材料科学
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物理学
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DOI
高影响因子
SEPARATION AND PURIFICATION TECHNOLOGY
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2024
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IF 8.1
Ying Chen,Yuan Gao,Yongsheng Xu,Yuanlin Jing,Wenchao Peng
Nitrogen doped carbon materials have great potential in the peroxymonosulfate based advanced oxidation processes due to their high efficiency. However, because of the limitation of prepared method, the doped N species are usually uncontrollable. In this work, a series of metal-free N-doped carbon materials are synthesized by chemical vapor deposition (CVD) with a CaO template and through regulating the deposition temperature we achieve the gradient control of the edged-N species. Taken phenol as the pollutant probe, the catalytic performances of N-doped carbon material are investigated, and 700 °C is determined to be the optimal deposition temperature for carbon material with a reaction rate constant of 0.335 min −1 . After the analysis of kinetics and the N species, we demonstrate that the content of pyrrolic N has an exponential relationship with the activity. Radicals quenching experiments, electron paramagnetic resonance and electrochemical test are also employed to verify that O 2 •– , 1 O 2 , and direct electron transfer are the dominated reactive oxidation species rather than typic hydroxyl and sulfate radicals. Overall，this doped strategy through CVD give a new insight of controlling doped species in carbon materials preparation.
研究领域:
环境科学
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材料科学
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产品关联
DOI
高影响因子
OPTICAL MATERIALS
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2024
·
IF 3.8
Jun Xie,Mei Zhao,Youqing Dong,Chao Zou,Shuang Pan,Quanlong Xu,Yun Yang,Shun Wang,Lijie Zhang
The all-inorganic lead-free perovskite Cs 2 SnI 6 has gained considerable research attention due to its outstanding characteristics, including non-toxicity, robust stability, and superior photoelectric performance. In this research, we employed a simple yet robust chemical vapor deposition technique to successfully grow ultra-thin 2D Cs 2 SnI 6 flakes on a mica substrate, achieving a minimal thickness of just 8 nm and a significant lateral size of up to 48 μm. The obtained 2D Cs 2 SnI 6 flakes displayed an extended photoluminescent lifetime of approximately 1.44 ns and exceptional stability, maintaining their crystal structure intact over a period of 60 days. The photodetectors fabricated from Cs 2 SnI 6 flakes demonstrated a broad ultraviolet to near-infrared response range (365–1342 nm), with a responsivity of up to 6.25 × 10 5 A W −1 . They additionally displayed rapid rise and decay times of 31.32 ms and 72.42 ms, respectively, with an external quantum efficiency reaching as high as 1.92 × 10 6 %, and a detectivity achieving 1.27 × 10 11 Jones. This research serves as a critical step forward in enabling the facile yet robust synthesis of stable, all-inorganic ultra-thin lead-free perovskites, paving the way for innovation in environmentally friendly optoelectronic devices.
研究领域:
材料科学
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光电技术
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纳米科技
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产品关联
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
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2012
·Vol. 23
·期 2
·198-203
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IF 10.179
Tianru Wu,Guqiao Ding,Honglie Shen,Haomin Wang,Lei Sun,Da Jiang,Xiaoming Xie,Mianheng Jiang
A simple but efficient strategy to synthesize millimeter-sized graphene single crystal grains by regulating the supply of reactants in the chemical vapor deposition (CVD) process is demonstrated. Polystyrene is used as a carbon source. Pulse heating on the carbon source is utilized to minimize the nucleation density of graphene on copper foil, while a gradual increase in the temperature of the carbon source and the flow rate of hydrogen is adapted to drive the continuous growth of the graphene grains. As a result, the nucleation density of graphene grain can be controlled to as low as ≈100 nuclei/cm 2 , and a single crystal grain can grow up to dimensions of ≈1.2 mm. Raman spectroscopy, transmission electron microscopy (TEM), and electrical-transport measurements show that the graphene grains obtained are of high quality. The strategy presented provides very good controllability and enables the possibility of large graphene single crystals, which is of vital importance for practical applications.
研究领域:
材料科学
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物理化学
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DOI
高影响因子
Nanoscale Horizons
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2022
·Vol. 7
·期 7
·743-751
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IF 11.684
Xing Xin,Jiamei Chen,Yanmei Zhang,Mao-Lin Chen,Youzhe Bao,Weizhen Liu,Yichun Liu,Haiyang Xu,Wencai Ren
The synthesis of large-scale monolayer single-crystal MX2 (M = Mo, W; X = S, Se), a typical transition metal dichalcogenide (TMD), is the premise for their future applications. Compared with insulating substrates such as SiO2 and sapphire, Au is more favourable for the fast growth of TMDs by chemical vapor deposition (CVD). Recently, large-scale single-crystal WX2 was successfully grown and transferred on Au. In sharp contrast, the growth and transfer for monolayer MoX2 is still very challenging, because Au has a higher solubility of Mo and stronger interaction with MoX2 than WX2. Compared with the most studied MoS2, MoSe2 is superior in many aspects because of the narrower band gap and tunable excitonic charging effects. However, the synthesis of large-scale single-crystal MoSe2 on Au has not been reported so far. Here, a pre-alloying CVD method was developed to solve the problems for the growth and non-destructive transfer of MoX2. It has realized the ultrafast growth (30 s) of submillimeter-scale (560 μm) single-crystal MoSe2 for the first time. As-grown samples are strictly monolayers with good optical and electrical properties, which can be easily transferred without sacrificing Au foils by the electrochemical bubbling method. It was found that pre-alloying not only passivates the energetically active sites on Au but also weakens the interaction between Au and MoSe2, which is responsible for the ultrafast growth and easy transfer of MoSe2. This method is also universal for the fast growth and non-destructive transfer of other 2D TMDs.
研究领域:
材料科学
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纳米技术
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DOI
高影响因子
JOURNAL OF APPLIED PHYSICS
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2016
·Vol. 120
·期 12
·
IF 2.101
Hao Song,Yang Bingchu,Gao Yongli
Compared with the most studied monolayer MoS 2 , bilayer MoS 2 possesses many distinct fascinating physical properties and potential applications owing to interlayer interactions and structural symmetry. Here, bilayer MoS 2 domains with strict identical AB Bernal stacked order were controllably synthesized using chemical vapor deposition method. In addition, the electrostatic properties of bilayer MoS 2 were systematically investigated by multiple means of photoemission electron microscopy, electrostatic force microscopy, and kelvin probe force microscopy. We found that the work function of monolayer MoS 2 is homogeneous across single crystals and polycrystalline films except for grain boundaries. However, the work function of the Bernal stacked bilayer MoS 2 decreases by 50 ± 4 meV compared with that of monolayer MoS 2 due to the interlayer coupling and screening effects. The deeper understanding gained here on the electrostatic properties of the AB Bernal stacked bilayer MoS 2 should help in the creation of next-generation electronic and optoelectronic devices.
研究领域:
材料科学
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物理化学
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纳米技术
✓ 已验证
DOI
高影响因子
Nanomaterials
·
2019
·Vol. 10
·期 1
·75
·
IF 4.034
Siyuan Wang,Guang Wang,Xi Yang,Hang Yang,Mengjian Zhu,Sen Zhang,Gang Peng,Zheng Li
Two-dimensional (2D) layered semiconductor materials, such as transition metal dichalcogenides (TMDCs), have attracted considerable interests because of their intriguing optical and electronic properties. Controlled growth of TMDC crystals with large grain size and atomically smooth surface is indeed desirable but remains challenging due to excessive nucleation. Here, we have synthesized high-quality monolayer, bilayer MoSe2triangular crystals, and continuous thin films with controlled nucleation density via reverse-flow chemical vapor deposition (CVD). High crystallinity and good saturated absorption performance of MoSe2have been systematically investigated and carefully demonstrated. Optimized nucleation and uniform morphology could be achieved via fine-tuning reverse-flow switching time, growth time and temperature, with corresponding growth kinetics proposed. Our work opens up a new approach for controllable synthesis of monolayer TMDC crystals with high yield and reliability, which promote surface/interface engineering of 2D semiconductors towards van der Waals heterostructure device applications.Keywords:transition metal dichalcogenides (TMDCs);MoSe2;controlled growth;reverse-flow chemical vapor deposition (CVD)
研究领域:
材料科学
·
半导体物理
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DOI
PubMed
高影响因子
Coatings
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2024
·Vol. 14
·期 11
·1473
·
IF 2.9
Bin Zhu,Wenjun Li,Wu Tang,Hui Tang
With the increasing demand for renewable energy and sustainable technologies, lithium-ion batteries (LIBs) have become crucial energy storage components. Despite the promising properties of the high capacity and stability of TiO2, its large-scale application as an anode for LIBs is hindered by challenges like poor conductivity and volumetric changes during cycling. Here, a rutile TiO2composite material with a thinned carbon coating (TiO2@TC) was synthesized through chemical vapor deposition (CVD) and a subsequent annealing process, which significantly improved the reversibility, cycling stability, and rate performance of the TiO2anode materials. The thickness of the carbon layer on TiO2was precisely controlled and thinned from 4.2 nm to 1.9 nm after secondary annealing treatment, leading to a smaller steric hindrance and an improved conductivity while serving as protective coatings by preventing the electrochemical degradation of the TiO2surface and hindering volumetric changes during cycling. The resulting TiO2@TC with the thin carbon layer demonstrated a high specific capacity of 167 mAh g−1at 0.5 C in Li-based half cells, which could stably run for 200 cycles with nearly 100% capacity retention. The thin carbon layer also contributes to an improved rate performance of 90 mAh g−1at even 20 C. This work provides an innovational strategy for improving the conductivity and volumetric changes during the cycling of TiO2anodes.
研究领域:
材料科学
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能源存储技术
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产品关联
DOI
高影响因子
ACS Applied Electronic Materials
·
2025
·
IF 4.7
Li Xiao,Xiuxian Li,Zhukang Zhang,Yue Long,Gang Wang,Hengxiang Gong
Integrating wide band gap semiconductor materials with silicon (Si) to create heterojunctions is an effective strategy for enhancing the ultraviolet (UV) sensitivity of optoelectronic devices. However, epitaxially growing high-quality wide band gap films on Si substrates at low temperatures without compromising the properties of Si remains challenging. In this study, we introduce a low-cost mist chemical vapor deposition (CVD) technique to deposit Cs3Cu2I5 perovskite films and fabricate a simple-structured Cs3Cu2I5/n-Si planar heterojunction. This technique enables an orderly deposition and rapid crystallization process, distinct from traditional solution-based methods. Herein, we report for the first time a compact, thick Cs3Cu2I5 film with an average grain size of 5.27 μm and a thickness of approximately 2.8 μm exhibiting orientated growth along the (303) plane. Furthermore, the simply constructed Cs3Cu2I5/n-Si photodiode exhibited a maximum photoresponsivity of 186 mA W–1 and a specific detectivity of 2.5 × 1012 Jones under 278 nm illumination. The on–off cycling tests demonstrated excellent operational stability, with unpackaged devices retaining 90% of their initial photocurrent after two months of storage under ambient conditions.
研究领域:
材料科学
·
光电子学
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产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）