Nanomaterials
·
2026
·Vol. 16
·期 3
·205
·
IF 4.8
Qiya Liu,Xinsheng Yang,Min Zhang
Magnetic topological insulators (TIs) are promising candidates for realizing the quantum anomalous Hall effect (QAHE) and advancing the development of next-generation low-energy transistors and electronic devices. Doping Bi2Se3with nano-carbon can introduce magnetic order and open the Dirac gap without introducing extrinsic magnetic impurities. In this work, the C0.06Bi2Se3single crystal was prepared using the Bridgman method, and their electrical and magnetotransport properties were systematically investigated. Temperature-dependent resistivity and magnetoresistance measurements revealed a magnetic-field-induced metal–insulator-like transition near 152 K. Angle-resolved photoemission spectroscopy (ARPES) detected an energy gap of about 43 meV at the Dirac point, confirming that carbon doping modulates the surface state and opens the gap. Pronounced Shubnikov–de Haas oscillations indicate high carrier mobility in C0.06Bi2Se3. Furthermore, the temperature-dependent Kerr spectra shows that the spin relaxation behavior of C0.06Bi2Se3differs significantly from that of pure Bi2Se3; the relaxation process of spin electrons from the surface state (τs) dominates the spin dynamics and exhibits distinct trends around 30 K and 150 K due to the interplay of the Dirac gap and impurity-induced states. These results demonstrate the potential of magnetic topological insulator C0.06Bi2Se3for novel electronic and spintronic applications.
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DOI
PubMed
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2018
·Vol. 28
·期 33
·1802707
·
IF 13.325
Fakun Wang,Leigang Li,Wenjuan Huang,Liang Li,Bao Jin,Huiqiao Li,Tianyou Zhai
Infrared detection at optical communication wavelength is of great significance because of their diverse commercial and military communication applications. The layered Bi 2 Se 3 with a narrow band gap of 0.3 eV is regarded as a promising candidate toward high-performance terahertz to infrared applications. However, the controllable synthesis of large-size ultrathin Bi 2 Se 3 flakes remains a challenge owing to complex nucleation process and infrared telecommunication photodetectors based on Bi 2 Se 3 flakes are rarely reported. Here, large size (submillimeter: 0.2–0.4 mm in lateral dimensions) and ultrathin (thickness: 3 nm to few nanometers) 2D Bi 2 Se 3 flakes with high crystal quality are obtained by suppressing the nucleation density. More importantly, back-gate field-effect transistor based on Bi 2 Se 3 flake exhibits an ultrahigh on/off current ratio of 10 6 and competitive mobility of 39.4 cm 2 V −1 s −1 . Moreover, excellent on/off ratio of 972.5, responsivity of 23.8 A W −1 , and external quantum efficiency of 2035% are obtained from Bi 2 Se 3 -based photodetector at 1456 nm in the E-band of the telecommunication range. With controlled morphology and excellent photoresponse performance, the Bi 2 Se 3 photodetector shows great potential in the optoelectronic field including communications, military, and remote sensing.
研究领域:
光电子学
·
纳米材料
·
红外探测
·
光子学
·
半导体器件
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DOI
高影响因子
Materials
·
2017
·Vol. 10
·期 11
·1332
·
IF 2.654
Xinghua Wu,Chao Tan,Qingkai Wang,Yanyan Guo,Dianyuan Wang,Yongqian Wang,Dawei Meng
Two-dimensional Bi2Se3nanosheets with hexagonal shape are synthesized by a solution synthetic route. The Bi2Se3nanosheets are 120 nm in edge width and 7 nm in thickness. The size of the Bi2Se3nanosheets can be controlled by choosing different kinds of reducing agents including hydroxylamine and ethylenediamine. Subsequently, we demonstrate a configuration of two-color all-optical switching based on plasma channels effect using the as-synthesized Bi2Se3nanosheets as an optical media. The signal light can be modulated as two states including dot and ring shape by changing the intensity of control light. The modulated signal light exhibits excellent spatial propagation properties. As a type of interesting optical material, ultrathin two-dimensional Bi2Se3nanosheets might provide an effective option for photoelectric applications.Keywords:nanoparticles;optical materials and properties;nanocrystalline;optical switching
研究领域:
材料科学
·
光学
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PubMed
高影响因子
APPLIED SURFACE SCIENCE
·
2025
·
IF 6.9
Zhihao Xing,Weige Zhang,Jing Xie,Xinhui Liu,Zhenjiang Lu,Jindou Hu,Yali Cao
The Bi 2 Se 3 electrode material with dual storage mechanism has great potential to promote the development of high-capacity lithium-ion batteries. However, the serve selenium loss, large volume expansion and poor conductivity of Bi 2 Se 3 greatly hinder its practical application. To circumvent these issues, a unique Bi 2 Se 3 @C layered nanomaterial with sandwich like architecture was prepared by in situ selenization of precursor that originated from low-temperature solid-state chemical reaction, which provides superior lithium-ion storage capacity due to the advantages of increased interlayer spacing and abundant active sites, as well as the carbon-coated Bi 2 Se 3 nanoparticles inhibit self-aggregation and buffer the expansion of volume. The Bi 2 Se 3 @C-5/1 presents an exceptional capacity of 561.4 mA h g −1 (500 mA g −1 , 300 cycles) and 476 mA h g −1 (3 A g −1 , 500 cycles), as well as outstanding rate capability and durability. The splendid lithium storage property of sandwiched Bi 2 Se 3 @C is anticipated to provide a feasible method for designing and constructing other anode materials.
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高影响因子
iScience
·
2026
·
IF 4.5
Liying Wen,Dongsheng Hu,Ruihong Zhang,Xiaoxiang Hu,Yan Luo,Hui Chen,Yifang Liang,Yong Li,Shifeng Wang
Two-dimensional materials have attracted much attention due to their unique structures and excellent optoelectronic properties. In this work, we fabricated c-axis-aligned SnSe 2 /Bi 2 Se 3 2D heterostructures via a hydrothermal technique, where the epitaxial growth of Bi 2 Se 3 nanoplates is achieved on SnSe 2 microplate substrates. The electronic states at the interfaces can be regulated facilely via tuning the Bi 2 Se 3 nanoplate coverage. The heterostructure not only increases the wavelength range over which light is absorbed, but also promotes the separation and migration of photo-excited charge carriers. Therefore, the heterostructure-based photodetector attains a photoresponse that outperforms those devices composed of pure SnSe 2 and Bi 2 Se 3 by a factor of 3.0 and 4.9, respectively. Furthermore, the optimal heterostructure generates a photocurrent of 289 μA cm -2 under ultraviolet illumination, which surpasses those of recently reported state-of-the-art photodetectors. Accordingly, this work establishes an effective approach for developing low-cost, high-perfomance optoelectronic devices based on 2D chalcogenides.
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高影响因子
Small Methods
·
2019
·Vol. 3
·期 12
·1900349
·
IF 0
Ye Zhang,Feng Zhang,Yiguo Xu,Weichun Huang,Leiming Wu,Zhijun Dong,Yupeng Zhang,Biqing Dong,Xiuwen Zhang,Han Zhang
Heterojunctions, composed of different materials, are widely explored in optoelectronic devices thanks to their unique advantages, such as high carrier mobility and excellent photoelectronic characteristics. In this work, Bi 2 Se 3 /Te@Se heterojunctions (Bi 2 Se 3 /Te@Se) are synthesized through the epitaxial growth of Bi 2 Se 3 nanosheets (Bi 2 Se 3 NTs) on tellurium@selenium nanotubes (Te@Se NTs) by using a low-cost and facile solvothermal process. Bi 2 Se 3 /Te@Se are further applied in high-performance photoelectrochemical (PEC)-type photodetection due to the advantages of broadband optical response and fast carrier relaxation time. The PEC results demonstrate that the as-prepared photodetectors have pronounced photoresponse behavior from the ultraviolet to visible band with self-driven ability and excellent long-term stability. It is anticipated that this work provides a new strategy for epitaxial growth of topological insulators on semiconductors for designing new heterojunctions toward high-performance optoelectronic devices.
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DOI
SENSORS AND ACTUATORS B-CHEMICAL
·
2023
·
IF 8.4
Dandan Song,Xingge Huang,Minze Han,Xiaoyue Xu,Guoqiang Li,Xiaotong Wang,Yisong Zhao,Faming Gao
Selenides possess more electroactive unsaturated edge sites and superior redox activity, due to larger ionic radius together with low electronegativity of Se in comparation with sulfur and oxygen. However, mono-metallic selenides still suffer from the intrinsic limitations of low conductivity and electrochemical activity, which hinders their application in electrochemical sensor . Benefiting from the synergistic effects , bimetallic selenides exhibit relatively high electrical conductivity and electrochemical property. Moreover, heterostructure engineering is identified as an ingenious technology to endow materials with desired functions for developing high performance devices. Herein, a carbon-encapsulated bimetallic selenides (Bi 2 Se 3 -FeSe 2 @C) composite with lateral layered heterostructure was synthesized and employed as electrode material for electrochemical biosensing. The formed few-layered Bi 2 Se 3 -FeSe 2 @C lateral heterostructure with a large surface area possesses superb electrochemical properties and abundant immobilized sites toward acetylcholinesterase (AChE). The robust AChE-NF/Bi 2 Se 3 -FeSe 2 @C/GCE biosensor exhibited promising monocrotophos detection performance along with high sensitivity, a wide linear range (10 −5 ∼10 µg mL −1 ) and low limit of detection (1.51 ×10 −13 M).
研究领域:
材料科学
·
生物医学工程
·
分析化学
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DOI
高影响因子
Crystals
·
2017
·Vol. 7
·期 9
·257
·
IF 1.566
Rui Liu,Xing Tan,Guangkun Ren,Yaochun Liu,Zhifang Zhou,Chan Liu,Yuanhua Lin,Cewen Nan
Polycrystalline Bi2Se3−xTex(x = 0~1.5) samples were prepared by self-propagating high-temperature synthesis (SHS) combined with spark plasma sintering (SPS) and their thermoelectric properties were investigated. The SHS-SPS process can shorten the time with few energy consumptions, and obtain almost pure Bi2Se3-based phases. Consequently, the Se vacancies and anti-site defects contribute to the converged carrier concentration of ~2 × 1019cm−3while the increased carrier effective mass enhances the Seebeck coefficient to more than −158 μV K−1over the entire temperature range. The lattice thermal conductivity is suppressed from 1.07 Wm−1K−1for the pristine specimen to ~0.6 Wm−1K−1for Te-substitution samples at 300 K because of point defects caused by the difference of mass and size between Te and Se atoms. Coupled with the enhanced power factor and reduced lattice thermal conductivity, a highZTof 0.67 can be obtained at 473 K for the Bi2Se1.5Te1.5sample. Our results reveal that Te-substitution based on the SHS-SPS method is highly-efficient and can improve the thermoelectric properties of Bi2Se3-based materials largely.
研究领域:
材料科学
·
凝聚态物理
·
无机非金属材料
·
能源材料
·
热电转换
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DOI
高影响因子
ACS Applied Materials & Interfaces
·
2021
·
IF 9.229
Yihong She,Zhen Wu,Shengdong You,Quan Du,Xiaohong Chu,Lijuan Niu,Changchun Ding,Kenan Zhang,Lijie Zhang,Shaoming Huang
Two-dimensional (2D) heterojunctions have attracted great attention due to their excellent optoelectronic properties. Until now, precisely controlling the nucleation density and stacking area of 2D heterojunctions has been of critical importance but still a huge challenge. It hampers the progress of controlled growth of 2D heterojunctions for optoelectronic devices because the potential relation between numerous growth parameters and nucleation density is always poorly understood. Herein, by cooperatively controlling three parameters (substrate temperature, gas flow rate, and precursor concentration) in modified vapor deposition growth, the nucleation density and stacking area of WS2/Bi2Se3 vertical heterojunctions were successfully modulated. High-quality WS2/Bi2Se3 vertical heterojunctions with various stacking areas were effectively grown from single and multiple nucleation sites. Moreover, the potential nucleation mechanism and efficient charge transfer of WS2/Bi2Se3 vertical heterojunctions were systematically studied by utilizing the density functional theory and photoluminescence spectra. This modified vapor deposition strategy and the proposed mechanism are helpful in controlling the nucleation density and stacking area of other heterojunctions, which plays a key role in the preparation of electronic and optoelectronic nanodevices.
研究领域:
材料科学
·
纳米技术
·
光电子学
·
凝聚态物理
·
化学气相沉积
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DOI
高影响因子
Advanced Materials Technologies
·
2026
·
IF 6
Jie Yang,Qingfeng Zhang,Quan Pei,Mei Yang,Jiafeng Zhai,Ling Li,Jue Liu,Shuhong Xie
The Bi 2 Se 3 /SnSe 2 @C heterostructure anode encapsulated within a carbon matrix was synthesized by coordination reactions followed by selenization. This rationally designed composite enhances K + diffusion kinetics and electron transfer synergistically, leading to outstanding potassium storage performance. It delivers excellent cycling stability and rate performance. At a high current density of 1000 mA g −1 , the Bi 2 Se 3 /SnSe 2 @C delivers an initial discharge capacity of 274.1 mAh g −1 , and exhibits stable cycling stability for 1000 cycles.
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高影响因子
Journal of Materials Chemistry C
·
2021
·Vol. 10
·期 4
·1289-1301
·
IF 7.393
Sartaj Wali,Qin Yin,Jiao Li,Guoxiang Si,Muhammad Shafi,Junfeng Ren,Hongbin Zhang
Organic–inorganic heterostructures (OIHs) are an emerging topic that has attracted great research enthusiasm due to their unique features for electronic and optoelectronic applications. Although OIHs constructed with topological insulators and organic small molecule semiconductors may have better device performance, this type of heterostructure has rarely been reported, and more research is required to uncover its internal dynamics. Thereby, OIHs based on organic rubrene and inorganic topological insulator Bi2Se3, which were prepared by employing simple physical vapor deposition, were investigated for the first time. Experimental results proved that the crystalline rubrene and topological insulator Bi2Se3 films are promising candidates for fabricating high-performance organic–inorganic heterostructure photodetectors (OIHPDs) accompanied by a broadband photodetection range. The Dirac surface state at the heterojunction interface facilitates the dissociation and transportation of photo-generated carriers. Importantly, the OIHPDs displayed excellent diode characteristics with a current rectifying ratio of 460, a maximum responsivity of 8.85 A W−1, a high detectivity of 3.14 × 1012 Jones, and an ultrafast response speed with τrise (2.1 μs) and τdecay (2.9 μs) under near-infrared light illumination of 1064 nm, respectively. Due to these interesting results, the OIHPDs can be used in many detection fields, and suggest a promising opportunity for novel device application in the future.
研究领域:
材料科学
·
光电子学
·
半导体物理
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DOI
高影响因子
Journal of Energy Storage
·
2026
·
IF 9.8
Ting Feng,Fang Wang,Yuhe Wang,Kai Lan,Yong Liu,Haitao Wu,Fengzhang Ren
Heterostructure engineering, especially for those constructed by bimetallics with different sodium storage mechanisms, can efficiently improve the electrochemical activity and conductivity of the anode materials. Herein, the Bi 2 Se 3 /NiSe 2 heterostructure with dual mechanisms is designed via simple hydrothermal and selenization processes. The constructed hierarchical structure is composed of the two-dimensional nanoplates formed by Bi 2 Se 3 species, coupled with carbon-coated NiSe 2 nanoparticles. The abundant Bi 2 Se 3 /NiSe 2 heterointerfaces and effective active sites can accelerate the infiltration of the electrolyte and significantly improve the electrochemical activity. Notably, the designed Bi 2 Se 3 /NiSe 2 @C possesses a unique complementarity originating from the different sodium storage mechanisms and reaction voltages of the two components. This can realize sodium storage in the whole operating voltage range, resulting in a high sodium storage capacity. Furthermore, a built-in electric field effect induced by the Bi 2 Se 3 /NiSe 2 heterojunction can accelerate electronic transfer and sodium ion diffusion while enhancing the Na + adsorption energy. Reassuringly, a high initial capacity of 632.6 mAh g −1 at 0.5 A g −1 , exceptional cycling stability (322.9 mAh g −1 at 3 A g −1 over 1270 cycles), and rate capability can be achieved for Bi 2 Se 3 /NiSe 2 @C. This work supplies a new idea for the design and preparation of novel heterostructures with complementary reaction potentials.
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高影响因子
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