Nanoscale Horizons
·
2018
·Vol. 4
·期 2
·452-456
·
IF 9.391
Yong Zhang,Wenxin Xu,Xiaojie Xu,Wei Yang,Siyuan Li,Jiaxin Chen,Xiaosheng Fang
It has always been a challenge to prepare self-powered ultraviolet photodetectors (UV PDs) utilizing a green, facile and low-cost method. Here, we provide such an approach for fabricating self-powered photodetectors based on Te nanowire/TiO2 nanoparticle (NP) and Te nanowire/ZnO nanoparticle (NP) heterojunctions. It is noteworthy that such devices were prepared via simply brushing non-toxic solution-processed Te nanowires and commercial TiO2 and ZnO nanoparticles onto paper. The as-obtained UV PDs can work under zero bias due to photovoltaic effects from the Te/TiO2 and Te/ZnO heterojunctions. This study not only presents high-performance UV PDs, but also provides a general and effective method for developing environmentally-friendly and energy-efficient optoelectronic devices for practical applications. The concept of employing daily-use brushes and recyclable paper provides a facile way to fabricate green low-cost PDs.
研究领域:
材料科学
·
纳米技术
·
光电子学
·
环境友好型器件
·
能源效率
✓ 已验证
DOI
高影响因子
Laser & Photonics Reviews
·
2022
·Vol. 16
·期 11
·2200338
·
IF 10.947
Jidong Liu,Qiaoyan Hao,Haibo Gan,Peng Li,Benxuan Li,Yudi Tu,Jingting Zhu,Dianyu Qi,Yang Chai,Wenjing Zhang,Fei Liu
Photodetectors based on two-dimensional (2D) van der Waals heterostructures (vdWHs) have demonstrated great potential in modern nanotechnologies across a wide range of applications. However, due to the severe interface recombination of the photogenerated electron–hole pairs and various absorption edges of constituent layers, they would suffer from low carrier collection efficiency, and the spectral response range of each constituent layer is indistinguishable. Herein, tellurium (Te) nanoflakes with broadband photoresponse are synthesized to construct type-I InSe/Te vdWHs photodetector, which exhibits an ultralow reverse dark current of 3 × 10 −14 A and an ultrahigh current rectification ratio of 10 8 . Moreover, considerable photovoltaic effect of the heterostructure device is observed under illumination, attaining a light on/off ratio of up to 10 5 , a high specific detectivity of 1.77 × 10 11 Jones, and a fast response time of 320 µs. Based on type-I band alignment, the Te layer can collect the photogenerated holes from the InSe layer to suppress the recombination of photogenerated carriers. More importantly, the spectral response of the InSe/Te heterostructure photodetector can be selectively modulated by the InSe layer. This work demonstrates that band alignment engineering of 2D vdWHs holds great potential for developing high-performance self-powered photodetectors.
研究领域:
材料科学
·
纳米技术
✓ 已验证
DOI
高影响因子
ACS Applied Energy Materials
·
2021
·
IF 6.024
Shuyao Li,Junhua Jiang,Zheng Ma,Yanqun Chen,Lanwei Li,Jianli Wang,Chao Wang
As we all know, the introduction of porous structure into the matrix is a very effective method to enhance the material’s thermoelectric performance. Herein, Er-doped Bi0.46Sb1.54Te3 bulk materials were successfully synthesized by high-energy ball milling and spark plasma sintering. The carrier mobility is enhanced and the carrier concentration is optimized by Er doping, thereby improving the electrical transport properties. Furthermore, the dispersed secondary phase nanoparticles and pores introduced by Er doping provide additional phonon scattering, which leads to the decreased lattice thermal conductivity. Finally, the Erx(Bi0.23Sb0.77)2–xTe3 (x = 0.02) sample shows a maximum ZT value of 1.21 at 350 K, and the average ZT value of 1.17 between 300–400 K is achieved.
研究领域:
材料科学
·
热电材料研究
✓ 已验证
产品关联
DOI
高影响因子
Nanomaterials
·
2022
·Vol. 12
·期 9
·1575
·
IF 5.719
Fujin Li,Lin Bo,Ruipeng Zhang,Sida Liu,Junliang Zhu,Min Zuo,Degang Zhao
Thermoelectric materials can directly convert heat and electricity, which is a kind of promising energy material. In view of cost and mechanical properties, polycrystalline SnSe material with highzTvalue is greatly desired. In this study, polycrystalline Sn0.94Pb0.01Se1-xTexsamples were prepared by the vacuum melting–hot pressing sintering method. Sn vacancies, Pb and Te atoms were simultaneously introduced into the polycrystalline SnSe. The power factor of Sn0.94Pb0.01Se1-xTexsamples was decreased, which could be attributed to the generation ofn-type semiconductor SnSe2. In addition, the phonons were strongly scattered by point defects and dislocations, which led to the decrease of thermal conductivity—from 0.43 Wm−1K−1to 0.29 Wm−1K−1at 750 K. Finally, the polycrystalline Sn0.94Pb0.01Se0.96Te0.04sample achieved the maximumzTvalue of 0.60 at 750 K.Keywords:SnSe;nanoparticles;zT;thermoelectric;TEM
研究领域:
材料科学
·
能源工程
✓ 已验证
DOI
PubMed
高影响因子
RSC Advances
·
2017
·Vol. 7
·期 29
·17682-17688
·
IF 3.108
Xin Qian,Yu Xiao,Lei Zheng,Bingchao Qin,Yiming Zhou,Yanling Pei,Bifei Yuan,Shangkai Gong,Li-Dong Zhao
Elementary Te is predicted to be a high-performance thermoelectric material through theoretical calculation, and the experimental results have confirmed this prediction through optimizing carrier concentrations. In this work, we investigate the thermoelectric transport properties in undoped Te at 300–673 K, revealing a low thermal conductivity ∼1.8 W m−1 K−1 at room temperature and a ZT ∼ 0.2 at 653 K. To further improve the thermoelectric performance in the Te system, we choose Sn, Pb, Bi, and Sb as dopants in Te. We find Bi and Sb can effectively enhance the electrical conductivity by two orders, from ∼2 S cm−1 in undoped Te to ∼300 S cm−1 and ∼550 S cm−1 at 300 K in Bi-doped and Sb-doped samples respectively. Meanwhile, these dopants can simultaneously significantly suppress the lattice thermal conductivity, decreasing from 1.22 W m−1 K−1 in undoped Te to 0.68 W m−1 K−1 and 0.73 W m−1 K−1 at 673 K in Bi-doped and Sb-doped samples, respectively. Maximum ZT values of ∼0.8 in Te0.9925Bi0.0075 and ∼1.1 in Te0.985Sb0.015 at 673 K can be achieved. The results indicate that Sb is an effective dopant in the Te system.
研究领域:
材料科学
·
热电学
·
半导体掺杂
✓ 已验证
DOI
高影响因子
JOURNAL OF COLLOID AND INTERFACE SCIENCE
·
2020
·
IF 7.489
Miaomiao Yu,Feng Gao,Yunxia Hu,Lifeng Wang,PingAn Hu,Wei Feng
Multilayer indium selenide (InSe) is a good candidate for high performance electronic and optoelectronic devices. The electrical performance of InSe is effectively regulated by dielectric layers, contact electrodes and surface doping. However, as a powerful tool to tune properties of materials, alloy engineering is absent for multilayer InSe. In this letter, for the first time, we investigate the electrical property of InSe 1-x Te x alloys and optoelectronic property of InSe-InSe 0.82 Te 0.18 p-n heterojunction. The electrical transport properties of InSe 1-x Te x alloys strongly depend on the content of Te composition. With the ratio of Te/Se increasing, the n -type electron transport behavior of InSe gradually transfers to the p-type hole transport behavior of InSe 0.82 Te 0.18 . The p-n InSe-InSe 0.82 Te 0.18 heterojunction shows a rectification effect and a self-powered photodetection. The self-powered photodetector (SPPD) has a broad photodetection range from visible light (400 nm) to near-infrared (NIR) light (1000 nm). The responsivity ( R ) of SPPD is 14.1 mA/W under illuminated by NIR light (900 nm) at zero bias, which is comparable to some of the 2D heterojunctions NIR photodetectors measured with an external bias. The SPPD also shows a stable and fast response to NIR light (900 nm). This work demonstrates that the electrical transport properties of InSe 1-x Te x alloys significantly rely on the ratio of Te/Se and suggests that InSe-InSe 1-x Te x p-n heterojunction has a excellent potential for application in the self-powered optoelectronic device.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ENVIRONMENTAL RESEARCH
·
2023
·
IF 8.3
Yuqing Liu,Huiqing Ma,Ang Li,Haixia Pan,Xianliang Yi,Yang Liu,Jingjing Zhan,Hao Zhou
Tellurium (Te) is a rare element within the chalcogen group, and its biogeochemical cycle has been studied extensively. Tellurite (Te(IV)) is the most soluble Te species and is highly toxic to organisms. Chemical or biological Te(IV) reduction to elemental tellurium (Te 0 ) is generally considered an effective detoxification route for Te(IV)-containing wastewater. This study unveils a previously unnoticed Te 0 oxidation process mediated by the manganese-oxidizing bacterium Bacillus sp. FF-1. This bacterium, which exhibits both Mn(II)-oxidizing and Te(IV)-reducing abilities, can produce manganese oxides (BioMnO x ) and Te 0 (BioTe 0 ) when exposed to Mn(II) and Te(IV), respectively. When 5 mM Mn(II) was added after incubating 0.1 mM or 1 mM Te(IV) with strain FF-1 for 16 h, BioTe 0 was certainly re-oxidized to Te(IV) by BioMnOx. Chemogenic and exogenous biogenic Te 0 can also be oxidized by BioMnOx, although at different rates. This study highlights a new transformation process of tellurium species mediated by manganese-oxidizing bacteria, revealing that the environmental fate and ecological risks of Te 0 need to be re-evaluated.
研究领域:
微生物学
·
环境科学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
LANGMUIR
·
2026
·
IF 4.4
Xiaobing Zhu,Moneeb Zafar,Yanmei Ren,Rongke Sun,Rui Li,Xin He,Yanqing Ma,Lei Ma
Abstract Tellurium nanowires have demonstrated great potential for various applications, such as thermoelectric devices, optoelectronics, and biosensors, due to their excellent electronic, thermal, and optical properties. However, lacking an effective method to prepare vertically aligned and uniformly distributed tellurium nanowire arrays is a bottleneck for their practical applications. In this study, we successfully fabricated aligned tellurium nanowires (A-Te NWs) on a Pt/polyimide/glass substrate using a seedless chemical liquid-phase method. Pt square arrays were employed as the catalytic layer to define patterned selective growth regions on the polyimide/glass substrate. Such geometric confinement of growth proves highly effective in promoting the vertical ordering of A-Te NWs. Moreover, the verticality and density of A-Te NWs highly depend on the Pt pattern size. Specifically, smaller patterns result in denser and more vertical A-Te NWs due to their lower surface roughness. In addition, the Pt layer thickness and liquid-phase reaction conditions for the growth of A-Te NWs have been optimized to yield densely packed and vertically aligned A-Te NWs, with a Pt layer thickness of 3 nm, a reaction time of 6 h, a reaction temperature of 30 °C, a pH of 10, a hydrazine hydrate amount of 2 mL, and a cetyltrimethylammonium bromide concentration of 5 mM. Our work paves the way for the practical applications of tellurium nanowires.
✓ 已验证
DOI
高影响因子
RARE METALS
·
2017
·Vol. 37
·期 4
·343-350
·
IF 1.189
Qin Bing-Chao,Xiao Yu,Zhou Yi-Ming,Zhao Li-Dong
IV–VI compounds are considered as promising thermoelectric materials, and high thermoelectric performance was achieved in IV–VI solid solutions. In this work, the thermoelectric properties of Pb–Sn–Te–Se-based solid solutions were systematically investigated. Among these solid solutions, it is found that a figure of merit ( ZT ) peak value of 1.0 at 873 K can be obtained in (PbTe) 0.5 (SnTe) 0.5 , on account of the combination of superior electrical properties in SnTe and low thermal conductivity in PbTe. Furthermore, we investigated and summarized the thermoelectric transport properties and proposed the thermoelectric performance maps for the IV–VI solid solutions in Pb–Sn–Te–Se system. This comprehensive investigation on Pb–Sn–Te–Se-based solid solutions can effectively guide and scan thermoelectric performance for a given unknown composition and enhance the thermoelectric properties in IV–VI compounds. Graphical
研究领域:
材料科学
·
凝聚态物理
·
功能材料
·
热电转换
·
半导体物理
✓ 已验证
DOI
高影响因子
iScience
·
2023
·
IF 5.8
Jie Li,Junrong Zhang,Junwei Chu,Liu Yang,Xinxin Zhao,Yan Zhang,Tong Liu,Yang Lu,Cheng Chen,Xingang Hou,Long Fang,Yijun Xu,Junyong Wang,Kai Zhang
Summary As an elemental semiconductor, tellurium (Te) has been famous for its high hole-mobility, excellent ambient stability and topological states. Here, we realize the controllable synthesis of horizontal Te nanoribbon arrays (TRAs) with an angular interval of 60°on mica substrates by physical vapor deposition strategy. The growth of Te nanoribbons (TRs) is driven by two factors, where the intrinsic quasi-one-dimensional spiral chain structure promotes the elongation of their length; the epitaxy relationship between [110] direction of Te and [110] direction of mica facilitates the oriented growth and the expansion of their width. The bending of TRs which have not been reported is induced by grain boundary. Field-effect transistors based on TRs demonstrate high mobility and on/off ratio corresponding to 397 cm 2 V −1 s −1 and 1.5×10 5 , respectively. These phenomena supply an opportunity to deep insight into the vapor-transport synthesis of low-dimensional Te and explore its underlying application in monolithic integration.
研究领域:
材料科学
·
半导体物理
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ACS Nano
·
2024
·
IF 15.8
Lu Yu,Xiao-Lei Shi,Yuanqing Mao,Wei-Di Liu,Zhen Ji,Sitong Wei,Zipei Zhang,Weiyu Song,Shuqi Zheng,Zhi-Gang Chen
Incorporating donor doping into Mg3Sb1.5Bi0.5 to achieve n-type conductivity is one of the crucial strategies for performance enhancement. In pursuit of higher thermoelectric performance, we herein report co-doping with Te and Y to optimize the thermoelectric properties of Mg3Sb1.5Bi0.5, achieving a peak ZT exceeding 1.7 at 703 K in Y0.01Mg3.19Sb1.5Bi0.47Te0.03. Guided by first-principles calculations for compositional design, we find that Te-doping shifts the Fermi level into the conduction band, resulting in n-type semiconductor behavior, while Y-doping further shifts the Fermi level into the conduction band and reduces the bandgap, leading to enhanced thermoelectric performance with a power factor as high as >20 μW cm–1 K–2. Additionally, through detailed micro/nanostructure characterizations, we discover that Te and Y co-doping induces dense crystal and lattice defects, including local lattice distortions and strains caused by point defects, and densely distributed grain boundaries between nanocrystalline domains. These defects efficiently scatter phonons of various wavelengths, resulting in a low thermal conductivity of 0.83 W m–1 K–1 and ultimately achieving a high ZT. Furthermore, the dense lattice defects induced by co-doping can further strengthen the mechanical performance, which is crucial for its service in devices. This work provides guidance for the composition and structure design of thermoelectric materials.
研究领域:
材料科学
·
物理学
·
纳米技术
✓ 已验证
DOI
高影响因子
eScience
·
2023
·
IF 0
Mengjun Wang,Jun Jia,Hao Yan,Guang Li,Qiming Hong,Yuzheng Guo,Yong Xu,Xiaoqing Huang
Phase modulation of noble metal alloys (NMAs) is critically important in nanoscience since the distinct atomic arrangements can largely determine their physicochemical properties. However, the precise modulation of NMAs is formidably challenging, because thermodynamically stable phases are generally preferential compared to those metastable ones. Herein, we proposed a potential energy trapping strategy for phase modulation of Pd–Te alloys with solvents. Thereinto, ethylene glycol can increase the energy barrier for both Pd leaching and Te introduction, forming metastable Pd 20 Te 7 phase. Inversely, N, N-dimethylformamide is unable to trap metastable phase, inducing the phase evolution to thermodynamically stable PdTe phase, and the precise phase modulation was realized including Pd 20 Te 7 , PdTe and PdTe 2 phases. The Pd–Te alloys displayed phase-dependent formic acid oxidation catalytic performance with PdTe phase showing the best. This work proposes a strategy for creating metastable phase with potential energy trap, which may deepen the understanding of phase engineering for noble metal-based nanocrystals.
研究领域:
纳米科学
·
材料化学
·
物理化学
✓ 已验证
DOI
危险品化学品经营许可证（带存储）