ADVANCED FUNCTIONAL MATERIALS
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2025
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IF 19
Chao Zhong,Kuibao Yu,Yuan Qie,Yongshen Yu,Yongyi Lu,Ge Deng,Tailiang Guo,Hailong Hu,Fushan Li
Colloidal quantum dots (QDs) have shown great promise in the development of high-resolution displays for near-eye visual communication with the outside world. However, achieving full-color high-precision assembly of QDs at the nanoscale remains a critical challenge. This study proposes a novel strategy for the region-selective assembly of QDs for achieving ultra-high-resolution light-emitting devices. This approach leverages interface-assembled ultrathin surface microstructures to create specific wettability patterns, guiding the selective assembly of QDs on their surfaces. Ultimately, an ultra-high-resolution 36 599 pixels per inch (PPI) light-emitting device is successfully realized, with a record-high external quantum efficiency (EQE) of 18.74%. The addition of a molecular microstructure enhances the fidelity of the assembled QDs pattern, providing nearly a two-fold increase in contrast ratio while effectively suppressing device leakage current. Additionally, the assembly process is compatible with photo-crosslinking technology, resulting in a full-color light-emitting device with an EQE of 11.01%. Our strategy paves a simple and effective way for advancements in high-performance nano-display technology.
研究领域:
纳米技术
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显示技术
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光电子学
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材料科学
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自组装
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量子点
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DOI
高影响因子
Nature Communications
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2024
·Vol. 15
·期 1
·1-13
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IF 14.7
Chen Tianhong,Yan Dongpeng
Long persistent luminescence (LPL) has gained considerable attention for the applications in decoration, emergency signage, information encryption and biomedicine. However, recently developed LPL materials – encompassing inorganics, organics and inorganic-organic hybrids – often display monochromatic afterglow with limited functionality. Furthermore, triplet exciton-based phosphors are prone to thermal quenching, significantly restricting their high emission efficiency. Here, we show a straightforward wet-chemistry approach for fabricating multimode LPL materials by introducing both anion (Br − ) and cation (Sn 2+ ) doping into hexagonal CsCdCl 3 all-inorganic perovskites. This process involves establishing new trapping centers from [CdCl 6-n Br n ] 4− and/or [Sn 2-n Cd n Cl 9 ] 5− linker units, disrupting the local symmetry in the host framework. These halide perovskites demonstrate afterglow duration time ( > 2,000 s), nearly full-color coverage, high photoluminescence quantum yield ( ~ 84.47%), and the anti-thermal quenching temperature up to 377 K. Particularly, CsCdCl 3 : x %Br display temperature-dependent LPL and time-valve controllable time-dependent luminescence, while CsCdCl 3 : x %Sn exhibit forward and reverse excitation-dependent Janus-type luminescence. Combining both experimental and computational studies, this finding not only introduces a local-symmetry breaking strategy for simultaneously enhancing afterglow lifetime and efficiency, but also provides new insights into the multimode LPL materials with dynamic tunability for applications in luminescence, photonics, high-security anti-counterfeiting and information storage.
研究领域:
材料科学
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光电技术
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光子学
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纳米技术
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DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
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2025
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IF 19
Yu Han,Jun Li,Shuhuan Hao,Wan-Zhen Fo,Liwen Cao,Mengjiao Li,Yanan Liu,Jianhua Zhang
Photonic synaptic transistors, designed to emulate the multispectral light detection of retinal neurons, play a pivotal role in advancing artificial vision systems capable of full-color image recognition. However, their limited sensitivity to weak and multispectral light significantly hampers their application in full-color image capture and recognition. In this work, a p-i-n structured synaptic transistor is introduced that improves weak light sensitivity and enhances synaptic performance by addressing interface issues. By integrating P3HT/LiF/InZnGdO nanofibers as p-i-n structure, the spectral response is successfully broadened from visible to near-UV region, achieving sensitivity to light intensities as low as 0.05 mW cm −2 . The device exhibits remarkable PPF characteristics across the wavelength range of 395–633 nm, with the PPF index showing a maximum increase of 84% compared to the single InZnGdO nanofiber device. Additionally, multiple neural networks are constructed with data from the synaptic transistor array driven by wavelength-tunable synaptic plasticity to validate the device's feasibility in various application scenarios. The proposed device achieved a recognition accuracy of up to 95.26% for high-precision full-color images based on the public CIFAR-10 dataset. This p-i-n structure offers a novel pathway to enhance the synaptic performance of metal oxide-based synaptic transistors, advancing the development of next-generation artificial vision.
研究领域:
神经形态工程
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光电子学
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人工智能
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材料科学
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传感器与探测器
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DOI
高影响因子
ACS Applied Electronic Materials
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2020
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IF 0
Yanni Sun,Xikang Yang,Wei Jiao,Jun Wu,Zhenfu Zhao
All-inorganic perovskite quantum dot (PeQD) light-emitting diodes (QLEDs) are promising candidates for the next-generation flat-panel displays and semiconductor lighting technology. However, the stability issues severely limit their commercial applications. In this study, highly stable CsPbX3 (X = Cl, Br, I) PeQD films were prepared using InX3 (X = Cl, Br, I) and trioctylphosphine oxide (TOPO) as inorganic–organic hybrid ligands to passivate the surface defects of PeQDs. The obtained InX3-TOPO-CsPbX3 PeQDs not only have high photoluminance quantum yields (PL QYs) and very narrow emission (14–35 nm) but also possess long-term stability. This is mainly due to the synergistic effect of InX3 and TOPO inorganic–organic surface ligand passivation, which can effectively inhibit the halogen vacancy and reduce the surface defect of PeQDs. In addition, the chemical states of InBr3-TOPO-CsPbBr3 PeQDs were analyzed by XPS technology and it was found that InX3-TOPO synergistic surface passivation can effectively reduce the Pb═O bond in the crystal lattice. Moreover, full-colored perovskite QLEDs based on InX3-TOPO-CsPbX3 PeQDs were achieved by using ZnO/PBD as the double electron transport layer, NiO/TFB as the double hole transport material, and InX3-TOPO-CsPbX3 PeQDs as the light-emitting layer. The EQE (%) and luminance (cd m–2) of red, green, and blue QLEDs based on these InX3-TOPO-CsPbX3 PeQDs were 8.2% and 9080 cd m–2, 7.8% and 18,600 cd m–2, and 1.62% and 164 cd m–2, respectively. This cooperative effect based on the InX3-TOPO hybrid passivation strategy will open a way for the preparation of highly efficient, stable, and color-tunable perovskite QLEDs.
研究领域:
材料科学
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光电技术
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纳米技术
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半导体物理
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DOI
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