ACS Applied Polymer Materials
·
2025
·
IF 4.7
Likun Zang,Mingyang Zhang,Fuyuan Liu,Hui Tong
The demand for high-temperature polymer dielectrics continues to rise in fields such as smart grids, wind power generation, and electric vehicles. However, high-temperature dielectrics like poly(ether imide) (PEI) still face the issue of leakage current under electrothermal coupling fields, leading to a sharp decrease in the energy storage density. To address this challenge, we propose a molecular semiconductor copolymerization strategy, wherein 1,4,5,8-naphthalene tetracarboxylic dianhydride (NTCDA) and 3,4,9,10-perylene tetracarboxylic dianhydride are incorporated into the PEI backbone. This approach not only suppresses space charge migration but also ensures long-term leakage current stabilization, significantly improving the charge–discharge cycling stability and energy storage density. Crucially, copolymerization eliminates the risk of nanoscale phase separation between semiconductors and PEI matrices, ensuring uniform dielectric properties. By systematically optimizing the molecular semiconductor content, we demonstrate that a 0.125 mol % copolymerized PEI (NTCDA-co-PEI) achieves a remarkable energy storage density of 3.91 J/cm3 at 150 °C─double that of intrinsic PEI─while maintaining a stable dissipation factor. This work provides a scalable molecular design strategy for high-performance polymer dielectrics operating under extreme electrothermal conditions, paving the way for next-generation capacitive energy storage systems.
研究领域:
材料科学
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高分子科学
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电气工程
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储能技术
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介电材料
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产品关联
DOI
高影响因子
Nature Communications
·
2024
·Vol. 15
·期 1
·1-10
·
IF 14.7
Xu Weiting,Jiang Jiayang,Chen Yujia,Tang Ning,Jiang Chengbao,Yang Shengxue
Two-dimensional (2D) dielectrics, integrated with high-mobility semiconductors, show great promise to overcome the scaling limits in miniaturized integrated circuits. However, the 2D dielectrics explored to date still face the challenges of low crystallinity, diminished dielectric constant, and the lack of effective synthesis methods. Here, we report the controllable synthesis of ultra-thin gadolinium oxychloride (GdOCl) nanosheets via a chloride hydrate-assisted chemical vapor deposition (CVD) method. The resultant GdOCl nanosheets display good dielectric properties, including a high dielectric constant (high-κ) of 15.3, robust breakdown field strengths ( E bd ) exceeding 9.9 MV/cm, and minimal gate leakage currents of approximately 10 −6 A/cm 2 . The top-gated GdOCl/MoS 2 field-effect transistors (FETs) exhibit commendable switch characteristics, a negligible hysteresis of ~5 mV and a subthreshold swing down to 67.9 mV dec −1 . The GdOCl/MoS 2 FETs can also be employed to construct functional logic gates. Our study underscores the significant potential of the 2D GdOCl dielectric for innovative high-speed operated nanoelectronic devices.
研究领域:
材料科学
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纳米技术
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电子学
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半导体器件
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DOI
高影响因子
Nature Communications
·
2024
·Vol. 15
·期 1
·1-9
·
IF 14.7
Zhang Qiyan,Xie Qiaohui,Wang Tao,Huang Shuangwu,Zhang Qiming
Polymers are key dielectric materials for energy storage capacitors in advanced electronics and electric power systems due to their high breakdown strengths, low loss, great reliability, lightweight, and low cost. However, their electric and dielectric performance deteriorates at elevated temperatures, making them unable to meet the rising demand for harsh-environment electronics such as electric vehicles, renewable energy, and electrified transportation. Here, we present an all-polymer nanostructured dielectric material that achieves a discharged energy density of 7.1 J/cm³ with a charge-discharge efficiency of 90% at 150°C, outperforming the existing dielectric polymers and representing more than a twofold improvement in discharged energy density compared with polyetherimide. The self-assembled nano-scale multiboundaries effectively impede the charge injection and excitation, leading to more than one order of magnitude lower leakage current density than the pristine polymer matrix PEI at high electric fields and elevated temperature. In addition, the film processing is simple, straightforward, and low cost, thus this all-polymer nanostructured dielectric material strategy is suitable for the mass production of dielectric polymer films for high-temperature capacitive energy storage.
研究领域:
材料科学
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电气工程
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储能技术
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产品关联
DOI
PubMed
高影响因子
CERAMICS INTERNATIONAL
·
2021
·
IF 4.527
Weiqian Song,Yangxi Yan,Maolin Zhang,Dongyan Zhang,Li Jin,Zhimin Li
In this study, Co-doped 0.49 Pb(Ni 1/3 Nb 2/3 )O 3 -0.51 Pb(Hf 0.3 Ti 0.7 )O 3 ceramics with high piezoelectric constants, electromechanical coupling coefficients, and low dielectric losses were prepared by conventional solid-phase reaction method for use as piezoelectric energy harvesters in both resonant and non-resonant working states. XRD results showed the dissolution of Co ions in the crystal lattice , thereby replacing B-sites and transforming the crystal phase into tetragonal phase. Valence states of Co obtained from fitted XPS data confirmed the existence of Co as Co 2+ in the lattice. The introduction of Co 2+ effectively increased grain size, improved ferroelectric properties , reduced leakage current density, and enhanced electromechanical coupling coefficient k p . Impacts of Co-doping on properties of the as-obtained ceramics were discussed. The optimal performances were obtained at x = 1.25, with piezoelectric constant d 33 ~780 pC/N, electromechanical coupling coefficient k p ~0.62, and dielectric loss tan δ = 0.78%. In sum, the excellent piezoelectric properties of Co-doped PNN-PHT ceramics look promising for use as piezoelectric energy harvesters.
研究领域:
材料科学
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陶瓷
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压电材料
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能量收集
✓ 已验证
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2025
·
IF 19
Chao Zhong,Kuibao Yu,Yuan Qie,Yongshen Yu,Yongyi Lu,Ge Deng,Tailiang Guo,Hailong Hu,Fushan Li
Colloidal quantum dots (QDs) have shown great promise in the development of high-resolution displays for near-eye visual communication with the outside world. However, achieving full-color high-precision assembly of QDs at the nanoscale remains a critical challenge. This study proposes a novel strategy for the region-selective assembly of QDs for achieving ultra-high-resolution light-emitting devices. This approach leverages interface-assembled ultrathin surface microstructures to create specific wettability patterns, guiding the selective assembly of QDs on their surfaces. Ultimately, an ultra-high-resolution 36 599 pixels per inch (PPI) light-emitting device is successfully realized, with a record-high external quantum efficiency (EQE) of 18.74%. The addition of a molecular microstructure enhances the fidelity of the assembled QDs pattern, providing nearly a two-fold increase in contrast ratio while effectively suppressing device leakage current. Additionally, the assembly process is compatible with photo-crosslinking technology, resulting in a full-color light-emitting device with an EQE of 11.01%. Our strategy paves a simple and effective way for advancements in high-performance nano-display technology.
研究领域:
纳米技术
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显示技术
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光电子学
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材料科学
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自组装
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量子点
✓ 已验证
产品关联
DOI
高影响因子
Polymer-Plastics Technology and Materials
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2021
·
IF 2.371
Guozheng Cao,Wenying Zhou,Yujia Kou,Ying Li,Ting Li,Yun Wang,Dan Cao,Hongju Wu,Guangheng Wang,Zhi-Min Dang
To suppress the high dielectric loss of graphene oxide (GO)/poly(vinylidene fluoride) (PVDF) while still maintaining a high dielectric constant (k) near the filler percolation threshold, herein, GO nanosheets coated with polyvinyl pyrrolidone (PVP), poly(dopamine) (PDA) and tannic and Fe coordination complexes (TA-Fe), respectively, were incorporated into PVDF to investigate the effects of the three kinds of insulating interlayers on the dielectric properties of the nanocomposites. The results indicate that compared with pristine GO, all surface modified GO exhibit homogeneous dispersion in the matrix owing to the enhanced interface between fillers and matrix, and that the dielectric loss of the nanocomposites are significantly suppressed to rather low levels thanks to the presence of various insulating interlayers between GO nanosheets, which prevent them from direct contact, thereby remarkably reducing the leakage current and conductivity. Moreover, Activation energies for the pristine and modified GO/PVDF nanocomposites are calculated, respectively, and the introduction of insulating interlayers significantly reduces the relaxation activation energy of the nanocomposites.
研究领域:
材料科学
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电气工程
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纳米技术
✓ 已验证
产品关联
DOI
高影响因子
CHINESE CHEMICAL LETTERS
·
2024
·
IF 9.4
Jian Wang,Baohui Wang,Pin Ma,Yifei Zhang,Honghong Gong,Biyun Peng,Sen Liang,Yunchuan Xie,Hailong Wang
ABSTRACT PVDF-based nanocomposites have gained significant focus in capacitors for their excellent dielectric strength, its multi-scale structural inhomogeneity is the bottleneck for improving the energy storage performance. Here, the composite components are optimized by the matrix modification, BST (Ba 0.6 Sr 0.4 TiO 3 ) ceramic fibrillation and surface coating. A series of PVDF/polymethyl methacrylate/lysozyme@BST nanofibers with continuous gradient distribution (PF-M/ m BST nf-g) are prepared by the concentration gradient-biaxial high-speed electrospinning. The finite element simulation and experiment results indicate that the continuous gradient structure is favorable for the microstructure and inhomogeneity of the electric field distribution, significantly increasing the breakdown strength ( E b ) and the permittivity ( ε r ), as well as effectively suppressing the interfacial injected charge and leakage current. As a result, the energy storage density ( U e ) of 23.1 J/cm 3 at 600 MV/m with the charge-discharge efficiency ( η ) of 71% is achieved compared to PF-M (5.6 J/cm 3 @350 MV/m, 65%). The exciting energy storage performance based on the well-designed PF-M/ m BST nf-g provides important information for the development and application of polymer nanocomposite dielectrics.
研究领域:
材料科学
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电气工程
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纳米技术
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能源存储
✓ 已验证
产品关联
DOI
高影响因子
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
·
2024
·Vol. 130
·期 6
·1-15
·
IF 2.5
Zia Layiq,Saleem Farwa,Jaffari G. Hassnain,Hussain Mozaffar,Shah S. Ismat
Magnetoelectric composite materials, which exhibit both ferroelectric and ferromagnetic properties simultaneously, have attracted considerable interest for their potential in various applications such as microelectronics, memory devices, and spintronics. In this study, we investigated the synthesis, structural, morphological, electrical, and magnetic properties of multiferroic CoFe 2 O 4 /0.65BiFeO 3 -0.35PbTiO 3 (CFO/65BF-35PT) composite thin films. These films were prepared using a high ferroelectric, morphotropic phase boundary (MPB) composition, 65BF-35PT, combined with a high magnetostrictive compound, CFO. Multilayered CFO/65BF-35PT composite films were spin-coated onto fluorine-doped tin oxide (FTO)/glass substrates using the sol-gel method, with variation in the solution molarity to achieve different layer thicknesses. Structural analysis revealed a perovskite phase for 65BF-35PT and a spinal structure for CFO, with the presence of rhombohedral and tetragonal polymorphs confirming MPB composition. Scanning electron microscope images demonstrated uniform growth of 1 μm thick composite films. Ferroelectric hysteresis loops exhibited considerable leakage current at room temperature, increasing with higher CFO content, while current versus voltage plots revealed ohmic conduction at low applied fields and space charge limited current (SCLC) conduction at high fields in all composite films. The crossover field between ohmic and SCLC conduction decreased with increasing CFO content. Moreover, room-temperature magnetic hysteresis loops showed a decrease in saturation and coercive field with increasing CFO concentration, and the temperature-dependent magnetization response indicated a monotonic decrease, with magnetization vanishing around 800 K, confirming the magnetic order of CFO. Our findings demonstrate that stable ferroelectric and ferromagnetic phases can be achieved at low temperatures by depositing composite films containing CFO/MPB on a low-cost FTO substrate.
研究领域:
材料科学
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电气工程
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物理学
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纳米技术
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自旋电子学
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微电子学
✓ 已验证
产品关联
DOI
高影响因子
Nature Photonics
·
2024
·Vol. 18
·期 8
·870-877
·
IF 32.3
Hua Yunqiu,Zhang Guodong,Sun Xue,Zhang Peng,Hao Yingying,Xu Yadong,Yang Yujie,Lin Qianqian,Li Xiang,Zhai Zhongjun,Cui Fucai,Liu Hongjie,Liu Jiaxin,Tao Xutang
Halide perovskites have shown great potential for X-ray detection in medical imaging and product inspection applications. However, the ion migration in perovskites causes large noise and baseline drift, deteriorating the X-ray detection and imaging performance. Here we adopt the atmosphere-controlled edge-defined film-fed growth (EFG) method to grow high-quality shape-controlled CsPbBr 3 single crystals (SCs) in an Ar and HBr mixed atmosphere. Compared with the vertical Bridgman (VB)-CsPbBr 3 SCs, the EFG-CsPbBr 3 SCs show a much lower trap density, a higher resistivity (1.61 × 10 10 Ω cm) and a larger ion migration activation energy (0.378 eV), decreasing the leakage current and baseline drift. An X-ray detector based on EFG-CsPbBr 3 SCs hence exhibits outstanding balanced performance, with a negligible dark-current drift of 1.68 × 10 −9 μA cm −1 s −1 V −1 , an incredibly low detection limit of 10.81 nGy air s −1 and a sensitivity of 46,180 μC Gy air −1 cm −2 under a high electric field of 5,000 V cm −1 . Furthermore, the detector maintains a stable response for 30 days. Our work provides an effective strategy to improve lead-halide perovskite SCs for high-performance X-ray detection and imaging.
研究领域:
材料科学
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物理学
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电子工程
·
医学成像
✓ 已验证
产品关联
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2019
·
IF 3.45
Weihua Wu,Lingyan Liang,Jingjing Yu,Xi Xiao,Hongliang Zhang,Junhua Gao,Fei Zhuge,Ting-Chang Chang,Linfeng Lan,Hongtao Cao
Dielectrics fabrication on rough substrates, always leading to microstructural defects and detrimental dielectric properties eventually, is a great challenge for academic endeavors in this field. We report here on self-flattening AlO x :Y dielectric thin films processed by a facile aqueous solution method. The obtained AlO x :Y dielectrics are dense, large-area uniform, and amenable to accurate control of film thickness by repeating the deposition cycles. In particular, an atomically smooth surface with a RMS of 0.10 nm was realized for the AlO x :Y film with a thickness of 14.5 nm on Si wafer, yielding a low leakage current density of 7.9 × 10 -8 A cm -2 @2 MV/cm, a dielectric constant of 8.8 @100 Hz, and an attenuated dielectric dispersion property. The interactions between pre-baked YO x underlayer and later-dropped AlO x precursor were comprehensively investigated, in order to understand the film growth mechanism and the origin of self-flattening effect. Fortunately, this self-flattening effect is also applicable to other substrates. A RMS of 0.81 nm was achieved on ITO glasses , and the height distribution profile of the film surface was found to follow symmetric Gaussian distribution. This preparation routine was also examined by device verification in the fully-transparent thin-film transistors. The combination of ease of preparation and attractive physical properties would provide a green-route solution platform for dielectric synthesis, for interface engineering, and for well-performed devices on rough substrates.
研究领域:
材料科学
·
电子学
·
纳米技术
·
薄膜技术
✓ 已验证
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2023
·
IF 9.5
Wangying Xu,Tao Peng,Changjie Zhou,Deliang Zhu
Rare earth oxides (REOs) can be used as high-κ gate dielectrics that are at the core of electronic devices. However, a bottleneck remains with regard to obtaining high-performance REO dielectrics due to the serious hygroscopic issue and high defect states. Here, a general boronization strategy is reported to enhance the high-κ REO gate dielectric performance. Complementary characterization reveals that boronization is capable of reducing oxygen vacancies/hydroxyl defects in REOs and suppressing moisture absorption, leading to the improvement of leakage current, breakdown strength (up to 9 MV/cm), and capacitance–frequency stability. Furthermore, oxide transistors based on boronized REO dielectrics demonstrate state-of-the-art device characteristics with a high mobility of 40 cm2/V s, a current on/off ratio of 108, a subthreshold swing of 82 mV/dec, a hysteresis of 0.05 V, and superior bias stress stability.
研究领域:
材料科学
·
半导体器件
·
电子工程
✓ 已验证
DOI
PubMed
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2024
·
IF 13.3
Yongjian Chen,Xiankan Zeng,Cheng Yan,Shiyu Yang,Lunyao Pan,Chenglong Li,Maolin Mu,Wen Li,Guanqi Tang,Weiqing Yang
Charge carriers will recombine outside the emitting layer (EML) in non-ideal perovskite light-emitting diodes (PeLEDs), which can lead to parasitic loss and be detrimental to the performance of PeLEDs. Here, we have subtly utilized the property of perovskite nanocrystals (NCs) to design and optimize the homogeneity and optical property of EML, thereby suppressing the undesired carrier loss behavior in system. Photoluminescence (PL) spectra with transmission electron microscopy (TEM) images show that smaller and more homogeneous NCs in size are obtained by temperature-controlled (TC) method. Atomic force microscopy (AFM) images and temperature-dependent PL spectra show that EML with better optical property and uniformity is fabricated. The multiscale capacitance characterization shows that the device with modified EML exhibits significantly reduced leakage current, while the increased specific surface area between electron transport layer (ETL) and EML substantially reduces charge accumulation. Additionally, multiscale reactance, impedance and phase angle responses, reveal that the carrier oscillation behavior in the optimized device is suppressed compared to control group, leading to less energy loss. Consequently, the optimized devices exhibit lower leakage current and superior electroluminescent properties. The luminance is increased from 31650 cd/m 2 to 72941 cd/m 2 , current efficiency (CE) is improved from 59.9 cd/A to 94.3 cd/A, and the external quantum efficiency (EQE) rises from 12.6 % to 19.7 %, corresponding to improvement of 230 %, 157 %, and 156 %, respectively. This research provides valuable insight into the impact of functional layer morphology on carrier dynamic behavior in PeLEDs.
研究领域:
材料科学
·
光电技术
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纳米技术
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）