Nanomaterials
·
2025
·Vol. 15
·期 13
·1010
·
IF 4.3
Qiya Liu,Min Zhang,Xinsheng Yang,Tixian Zeng,Minghu Pan
Topological insulators (TIs) can be widely applied in the fields of ultrafast optical and spintronic devices owing to the existence of topologically protected gapless Dirac surface states. However, the study of ultrafast dynamics of carriers in TIs remains elusive. In this work, the carrier dynamics of Li-doped Bi2−xSe3single crystals were investigated by femtosecond (fs) transient optical spectroscopy (ΔR/R(t) signals). The temperature dependence for the relaxation rates of the electron–electron interaction and electron–phonon coupling is consistent with the results of electrical transport, which indicates the carrier dynamics of TI is highly related with carrier concentrations. We find that the carrier type and concentration of Bi2Se3can be tuned by Li doping, leading to a metal-insulation transition at low temperatures (T ≤ 55 K), indicating that electron–electron interactions are dominant at low temperature. For T > 55 K, electron–phonon coupling in the bulk carriers becomes the main electric transport mechanism.
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Photonics
·
2025
·Vol. 12
·期 7
·709
·
IF 1.9
Yun Wei,Peng Wan,Lijian Li,Tao He,Wanyu Ma,Tong Xu,Bingwang Yang,Shulin Sha,Caixia Kan,Mingming Jiang
Topological insulators (TIs) hold considerable promise for the advancement of optoelectronic technologies, including spectroscopy, imaging, and communication, owing to their remarkable optical and electrical characteristics. This study proposes a novel combination of Bi2Se3TIs and ReSe2for self-powered broadband photodetectors with high sensitivity and fast response time. The Bi2Se3/ReSe2heterojunction photodetector achieves broadband response spectra ranging for 375 nm to 1μm. It demonstrates a significant responsivity of 64 mA/W at a wavelength of 600 nm (1 mW/cm2), exhibits a rapid response speed of 345μs rise/336μs fall time, and has a 3 dB bandwidth of 1.4 kHz under zero-bias conditions. The high performance can be attributed to the suitable energy band structure of Bi2Se3/ReSe2and high carrier mobility in surface states of Bi2Se3. Excitingly, self-powered TIs photodetectors allow for high-quality signal transmission. The TIs employed in photodetectors can stimulate the production of new optoelectronic features, but they could also be used for highly integrated photonic circuits in the future.
研究领域:
光电子学
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材料科学
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纳米技术
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光子学
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半导体器件
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Nano-Micro Letters
·
2026
·Vol. 18
·期 1
·409
·
IF 38.5
Xu Yan,Zhang Xuefei,Lou Size,Tang Zhe,Xie Dongmei,Zhang Chuanrui,Chen Mengran,Liu Heng,Sun Chuan,Ou Yixiang,Zong Peng-an
A pyramid-interface-structured Bi 2 Se 3 layer was electrochemically constructed on flexible carbon paper, exhibiting excellent hydrophobicity with a contact angle of 143.7°.
Dual-mode decoupling of temperature and pressure without cross-interference was achieved using a single material in both air and underwater environments.
The sensor maintains stable signal output under prolonged underwater operation, mechanical bending, electromagnetic interference exposure, and even direct flame contact, demonstrating exceptional environmental resilience.
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Journal of Physics-Energy
·
2020
·Vol. 3
·期 1
·014003
·
IF 0
Guanda Zhou,Ting Zhao,Oumin Wang,Xin Xia,Jia Hong Pan
Rutile TiO2 nanorod arrays vertically aligned on conductive fluorine-doped tin oxide glass are optimized for photocatalysis in terms of the density and diameter of nanorods by tuning the concentration of Ti precursor and reaction time during the hydrothermal process. Quantum dots (QDs) of V2VI3( V = Bi; VI = Se, Te) topographic insulators are then employed as sensitizers to enhance the visible-light response of TiO2. Electrochemical measurements show that the decoration of Bi2Se3 or Bi2Te3 significantly increases the photocurrent due to the enhanced light harvesting properties and the charge carrier separation capability mediated by the topographic isolation effect of V2VI3 QDs. Photoelectrocatalytic (PEC) activity evaluation is conducted towards the decoloration of azo dyes, including methyl orange and methylene blue under the sunlight irradiation. The elaborated Bi2Se3/TiO2 nanorod array exhibits the superior PEC performances, presenting shows great potentials in environmental remediation.
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Small
·
2020
·Vol. 16
·期 32
·2002312
·
IF 11.459
Ke Pei,Fakun Wang,Wei Han,Sanjun Yang,Kailang Liu,Kewei Liu,Huiqiao Li,Tianyou Zhai
Organic single-crystalline semiconductors show great potential in high-performance photodetectors. However, they suffer from persistent photoconductivity (PPC) due to the charge trapping, which has severely hindered high-speed imaging applications. Here, a universal strategy of solving the PPC by integrating with topological insulator Bi 2 Se 3 is provided. The rubrene/Bi 2 Se 3 heterojunctions are selected as an example for general demonstration due to the reproducibly high mobility and broad optoelectronic applications of rubrene crystals. By virtue of high carrier concentration on Bi 2 Se 3 surface and the strong built-in electrical field, the photoresponse of the heterotransistor is significantly reduced for more than two orders (from over 10 s to 54 ms), meanwhile the photoresponsivity can reach 124 A W −1 . To the best of knowledge, this operating speed is among the fastest responses in organic–inorganic heterojunctions. The heterotransistor also shows unique negative differential resistance under positive gate bias, which can be explained by photoinduced de-trapping of electron trap states in the bulk rubrene crystals. Besides, the rubrene/Bi 2 Se 3 heterojunction behaves as a gate-tunable backward-like diode due to the inhomogenous carrier distribution in the thick rubrene crystal and inversion of relative Fermi level positions. The findings demonstrate versatile functionalities of the rubrene/Bi 2 Se 3 heterojunctions for various emerging optoelectronic applications.
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Advanced Optical Materials
·
2025
·
IF 7.2
Tuo Zhang,Yuan Ren,Xueqiong Cui,Zhenliang Li,Yujian Rao,Zejun Han,Qiongfeng Shi,Li Tao
Surface topography serves as powerful tuning knobs for enhancing the performance of compound semiconductor-based photodetectors. However, existing studies have been confined to microscale or submicron structures (e.g., photonic crystals) due to the challenges in fabricating well-defined sub-50 nm mesostructures in semiconductor thin films. Here, a programmable and scalable approach to synthesize mesoporous Bi 2 Se 3 (mBi 2 Se 3 ) films with precisely tunable pore size (13–30 nm), porosity, thickness, and crystallinity via amphiphilic block copolymer-templated electrochemical deposition is presented. The resulting nanoscale spherical interfaces enable multi-level light scattering, significantly boosting photodetector performance. The mBi 2 Se 3 /Au/Si based optimized devices exhibit a responsivity (R) of 6 mA W −1 , a detectivity (D*) of 10 13 Jones, and a sensitivity ( S ) of 10 6 cm 2 /W—orders of magnitude higher than their non-porous counterparts, and superior to other reported Bi 2 Se 3 based or mesostructured photodetectors. This work advances optical micro/nanostructure engineering down to the 10-nm scale, paving the way for next-generation photodetectors that simultaneously achieve high responsivity, detectivity, and speed. These findings hold great promise for applications in high-resolution infrared imaging and real-time image recognition.
研究领域:
材料科学
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纳米技术
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半导体物理
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电化学
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光电子学
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JOURNAL OF POWER SOURCES
·
2025
·
IF 7.9
Xue Guo,Jiahui Cao,Yang Liu,Kun Zhao,Hui Peng,Jianbo Xiong,Bitao Su,Xiaobo Zhang,Ming Zhong
The integration of heterostructure engineering with carbon materials exhibits significant advantages in enhancing ion transport efficiency and stability, buffering volume changes, and improving electrochemical lithium/sodium storage performance of transition metal selenide electrodes. In this study, we employ binary metal-organic frameworks as the precursors to successfully prepare rod-shaped composites assembled by carbon-coated bimetallic heterostructure nanoparticles (Cu 2-x Se/Bi 2 Se 3 @C) through a controlled selenization process at varying temperatures. The optimized Cu 2-x Se/Bi 2 Se 3 @C-600 composite demonstrate exceptional lithium storage capabilities, achieving high reversible capacities of 1102.3 mAh g −1 at 0.2 A g −1 after 100 cycles and 640.6 mAh g −1 at 1.0 A g −1 after 500 cycles. Ex-situ XRD analysis and theoretical calculations are utilized to elucidate the electrochemical reaction mechanisms and the benefits of the heterointerface in enhancing performance. The density functional theory calculation results indicate that the heterointerface in Cu 2-x Se/Bi 2 Se 3 reduces diffusion energy barrier of surface Li + ions and enhances electronic conductivity. The unique structure and composition advantages also grant the optimal composite superior sodium storage performance with high specific capacity (442.7 mAh g −1 at 0.2 A g −1 after 100 cycles), exceptional rate capability (297.3 mAh g −1 at 10.0 A g −1 ), and long-term cyclability (254.7 mAh g −1 at 5.0 A g −1 after 500 cycles).
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ADVANCED MATERIALS
·
2023
·Vol. 35
·期 51
·2306269
·
IF 29.4
Yu Zong,Haichao Chen,Jinsong Wang,Menghua Wu,Yu Chen,Liyu Wang,Xinliang Huang,Hongwei He,Xin Ning,Zhongchao Bai,Wen Wen,Daming Zhu,Xiaochuan Ren,Nana Wang,Shixue Dou
The challenge with aqueous zinc-ion batteries (ZIBs) lies in finding suitable cathode materials that can provide high capacity and fast kinetics. Herein, two-dimensional topological Bi 2 Se 3 with acceptable Bi-vacancies for ZIBs cathode (Cu-Bi 2−x Se 3 ) is constructed through one-step hydrothermal process accompanied by Cu heteroatom introduction. The cation-deficient Cu-Bi 2−x Se 3 nanosheets (≈4 nm) bring improved conductivity from large surface topological metal states contribution and enhanced bulk conductivity. Besides, the increased adsorption energy and reduced Zn 2+ migration barrier demonstrated by density-functional theory (DFT) calculations illustrate the decreased Coulombic ion-lattice repulsion of Cu-Bi 2−x Se 3 . Therefore, Cu-Bi 2−x Se 3 exhibits both enhanced ion and electron transport capability, leading to more carrier reversible insertion proved by in situ synchrotron X-ray diffraction (SXRD). These features endow Cu-Bi 2−x Se 3 with sufficient specific capacity (320 mA h g −1 at 0.1 A g −1 ), high-rate performance (97 mA h g −1 at 10 A g −1 ), and reliable cycling stability (70 mA h g −1 at 10 A g −1 after 4000 cycles). Furthermore, quasi-solid-state fiber-shaped ZIBs employing the Cu-Bi 2−x Se 3 cathode demonstrate respectable performance and superior flexibility even under high mass loading. This work implements a conceptually innovative strategy represented by cation defect design in topological insulator cathode for achieving high-performance battery electrochemistry.
研究领域:
材料科学
·
电化学
·
储能技术
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Nature Communications
·
2022
·Vol. 13
·期 1
·1-12
·
IF 17.694
Zhao Yuwei,Lu Yue,Li Huiping,Zhu Yongbin,Meng You,Li Na,Wang Donghong,Jiang Feng,Mo Funian,Long Changbai,Guo Ying,Li Xinliang,Huang Zhaodong,Li Qing,Ho Johnny C.,Fan Jun,Sui Manling,Chen Furong,Zhu Wenguang,Liu Weishu,Zhi Chunyi
The performances of rechargeable batteries are strongly affected by the operating environmental temperature. In particular, low temperatures (e.g., ≤0 °C) are detrimental to efficient cell cycling. To circumvent this issue, we propose a few-layer Bi 2 Se 3 (a topological insulator) as cathode material for Zn metal batteries. When the few-layer Bi 2 Se 3 is used in combination with an anti-freeze hydrogel electrolyte, the capacity delivered by the cell at −20 °C and 1 A g −1 is 1.3 larger than the capacity at 25 °C for the same specific current. Also, at 0 °C the Zn | |few-layer Bi 2 Se 3 cell shows capacity retention of 94.6% after 2000 cycles at 1 A g −1 . This behaviour is related to the fact that the Zn-ion uptake in the few-layer Bi 2 Se 3 is higher at low temperatures, e.g., almost four Zn 2+ at 25 °C and six Zn 2+ at −20 °C. We demonstrate that the unusual performance improvements at low temperatures are only achievable with the few-layer Bi 2 Se 3 rather than bulk Bi 2 Se 3 . We also show that the favourable low-temperature conductivity and ion diffusion capability of few-layer Bi 2 Se 3 are linked with the presence of topological surface states and weaker lattice vibrations, respectively.
研究领域:
材料科学
·
电化学
·
能源存储
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NEW JOURNAL OF CHEMISTRY
·
2025
·
IF 2.5
Bolong Li,Qian Ma,Pan Gao,Huayushuo Zhang,Xiaoxia Yang,Mingming Song,Chao Li,Xiaomei Jiang
Direct X-ray detection technology, enabled by its rapid response, high special resolution and simple system configuration, has witnessed widespread applications in medical imaging, industrial non-destructive testing and scientific research. This drives the need for high-performance X-ray detection materials aiming for high sensitivity and low detection limits. Sulfides face significant challenges in X-ray detection performance due to the low atomic number of sulfur, intrinsic defects such as sulfur vacancies, and surface oxidation susceptibility. Herein, a series of rod-like clustered Bi2S3/Bi2Se3 composites with tunable S/Se molar ratios were synthesized via a facile hydrothermal method. Precise control of Se incorporation effectively modulated the morphology of nanorod-assembled Bi2S3 clusters, enhancing their structural and optoelectronic properties. Notably, the optimized Bi2S3-8% Se composite exhibited enlarged dimensions and denser nanorod clusters, leading to significantly improved X-ray detection performance. Under 40 kV X-ray irradiation, detectors based on Bi2S3-8% Se pellets achieved a remarkable sensitivity of 1025.37 μC·Gyair-1·cm-2, representing 3.5 times higher than pure Bi2S3. Furthermore, its detection limit was drastically reduced to 130 nGyair·s-1. The enhanced performance is attributed to the formation of Bi2S3/Bi2Se3 heterostructures, which facilitate efficient charge separation and transport, thereby boosting X-ray photoconversion efficiency. These findings highlight the potential of Bi2S3/Bi2Se3 composites as high-performance direct X-ray detectors, offering a promising strategy for developing advanced radiation detection materials.
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Science China-Materials
·
2021
·Vol. 65
·期 4
·1000-1011
·
IF 8.273
Luo Mingwei,Lu Chunhui,Liu Yuqi,Han Taotao,Ge Yanqing,Zhou Yixuan,Xu Xinlong
Heterostructures based on new advanced materials offer a cornerstone for future optoelectronic devices with improved photoelectric performance. Band alignment is crucial for understanding the mechanism of charge carrier transportation and interface dynamics in heterostructures. Herein, we grew SnS 2 /Bi 2 X 3 (X = Se, Te) van der Waals heterostructures by combining physical vapor deposition with chemical vapor deposition. The band alignment, measured by high-resolution X-ray photoelectron spectroscopy, suggested the successful design of type-I SnS 2 /Bi 2 Se 3 and type-II SnS 2 /Bi 2 Te 3 heterostructures. The SnS 2 /Bi 2 X 3 heterostructure greatly improved the photoelectric response of a photoelectrochemical-type photodetector. The photocurrent densities in the type-I SnS 2 /Bi 2 Se 3 and type-II SnS 2 /Bi 2 Te 3 heterostructure-based devices were more than one order of magnitude higher than those of SnS 2 , Bi 2 Se 3 , and Bi 2 Te 3 . The improved photoelectric properties of the SnS 2 /Bi 2 X 3 heterostructures can be explained as follows: (i) the photoexcited electrons and holes are effectively separated in the heterostructures; (ii) the charge-transfer efficiency and carrier density at the interface between the SnS 2 /Bi 2 X 3 heterostructures and the electrolyte are greatly improved; (iii) the formed heterostructures expand the light absorption range. The photoelectric performance was further enhanced by efficient light trapping in the upright SnS 2 . The photoelectric response is higher in the type-I SnS 2 /Bi 2 Se 3 heterostructure than in the type-II SnS 2 /Bi 2 Te 3 heterostructure due to more efficient charge transportation at the type-I SnS 2 /Bi 2 Se 3 heterostructure/electrolyte interface. These results suggest that suitable type-I and type-II heterostructures can be developed for high-performance photodetectors and other optoelectronic devices.
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BIOSENSORS & BIOELECTRONICS
·
2026
·
IF 10.5
Haozi Lu,Wei Zhou,Ye Li,Meiqing Yang,Jifei Yang,Can Hu,Yabo Ogunduyile,Travis Hu,Gang Yu,Huimin Li,Ming Zhang,Song Liu
In the field of non-invasive detection methods, sweat analysis has been increasingly capturing the interest of researchers due to its potential for clinical and health monitoring applications. While the detection of various substances in sweat has been extensively documented, the detection of heavy metal ions such as cadmium (Cd 2+ ) and lead (Pb 2+ ) is challenging due to their low concentrations, often falling below 100 ppb. Sweat testing also faces challenges such as variability in sweat production and evaporation rates, biological fouling, and sensor sensitivity decay, which significantly affect the accurate measurement of biomarker levels in sweat. Traditionally, machine learning in the biosensing domain is often employed for final data analysis and fitting, but its application in optimizing experimental conditions is less common. In this study, we developed a sensing platform based on Ti 3 C 2 T x /Bi 2 Se 3 nanoflower-modified screen-printed carbon electrodes (SPCE) for the detection of Cd 2+ and Pb 2+ in simulated sweat. The sensor demonstrates a broad detection range and relatively low limits of detection (LOD), with a linear detection range of 10-150 ppb and an LOD of 2.88 ppb for Cd 2+ , and a linear detection range of 5-150 ppb and an LOD of 3.45 ppb for Pb 2+ . In addition, an LSBoost–NGO machine-learning framework was employed to model the dependence of the stripping current on key experimental variables and to identify operating conditions that maximize analytical performance. These results demonstrate the potential of Ti 3 C 2 T x /Bi 2 Se 3 /SPCEs combined with machine-learning-guided optimization for sweat-based monitoring of trace heavy metal ion..
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