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Journal of Magnesium and Alloys · 2023 · IF 17.6

A micro-alloyed Mg-Zn-Ge alloy as promising anode for primary Mg-air batteries

Pingli Jiang,Depeng Li,Ruiqing Hou,Hong Yang,Junjie Yang,Shijie Zhu,Liguo Wang,Shaokang Guan

Alloying is one of the effective approaches to boost the discharge property of magnesium (Mg) anodes for primary Mg-air batteries and recently micro-alloying is highly recommended at the aim of developing advanced primary Mg system. In this study, micro-alloyed extruded Mg0.5Zn0.2Ge (in wt.%) alloy is evaluated as an anode candidate for primary Mg-air batteries in both half-cell and Mg-air full cell configurations, in comparison with commercially accepted Mg anodes, typified by as-cast HP Mg and extruded AZ31 alloy. The corrosion behavior at open circuit potential (OCP) condition of the three materials is also compared through electrochemical tests. Mg0.5Zn0.2Ge alloy displays the most negative OCP value and the highest corrosion resistance at OCP. During discharge, Mg0.5Zn0.2Ge anode exhibits low wasteful-discharge rate and homogeneous dissolution that gives rise to the absence of “chunk effect”. Consequently, the anodic efficiency and specific capacity of Mg0.5Zn0.2Ge anode are superior to those of HP Mg and AZ31 anodes, e.g. 57.3% and 1257 mAh g −1 at 1 mA cm −2 . Additionally, Mg-air battery based on Mg0.5Zn0.2Ge anode offers higher cell voltage and specific energy than those assembled with HP Mg and AZ31 anodes, which can be further optimized by addition of electrolyte additives. Therefore, micro-alloyed Mg0.5Zn0.2Ge alloy can serve as a promising candidate for anode material of primary Mg-air batteries.

CAS / MDL: 7647-14-5 1333-82-0
研究领域: 材料科学 · 电化学
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ACS Applied Nano Materials · 2025 · IF 5.5

Ge–Si/C Nanofiber Composite with Enhanced Cyclic Stability and Rate Capability for Lithium-Ion Batteries

Hui Gu,Zhenpeng Zhu,Zhiyuan Gao,Junhao Zhang,Xingmei Guo,Yuanjun Liu,Xiangjun Zheng,Qianqian Fan,Zhongyao Duan,Fu Cao,Chunsheng Li,Qinghong Kong

To deal with the low conductivity and structural instability of the silicon (Si)-based anode, a Ge–Si/C nanofiber (Ge–Si/CNF) composite is fabricated based on different starting reaction potentials for Si and Ge with lithium and excellent conductivity of Ge. Sucrose is innovatively introduced as a spinning aid to maintain the carbon fiber structure derived from poly(vinyl alcohol) as the spinning polymer. When Ge–Si/CNFs are investigated as the anode material for lithium-ion batteries, it demonstrates excellent cyclic stability and rate capability. Specifically, the Ge–Si/CNFs anode can still retain 764.1 mA h g–1 at 0.5 A g–1 after 1000 cycles, and its capacity retention rate reaches 72.1%. Significantly, the specific capacity is 1168.7 mA h g–1 at 2.0 A g–1, which is restored to 1731.4 mA h g–1 when it is adjusted back to 0.1 A g–1. The excellent lithium storage of Ge–Si/CNF anode is attributed to the effective release of stress during the lithiation/delithiation process because of the different starting potentials of Si and Ge. When one component is lithiated, the other one can act as a buffer matrix for improving the structural stability. Additionally, the addition of Ge and carbon fibers can speed up the transfer rate of Li+ and electrons.

CAS / MDL: 9002-89-5
研究领域: 材料科学 · 能源存储
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ADVANCED FUNCTIONAL MATERIALS · 2026 · IF 19.9

Electronic State Modulation of Cu by Ge for Post C─C Steps in Electrochemical CO2 Reduction

Xiangji Zhou,Zhilong Zheng,Jian Zhang,Jiapeng Ji,Xiaolong Zhang

The precise control of product selectivity in the electrochemical CO 2 reduction reaction (ECR) toward specific multi-carbon (C 2+ ) compounds remains a significant challenge. This work demonstrates that incorporating germanium (Ge) into copper (Cu) nanoparticles to form a solid solution effectively tunes the surface electronic states of Cu, thereby steering the C 2+ product distribution from ethylene toward ethanol. First-principles calculations predict that an optimal Ge content (Cu 94 Ge 6 ) optimizes the Cu 3d orbital hybridization and shifts the d-band center, strengthening the adsorption of the critical * CH 2 CHO intermediate and favoring its hydrogenation pathway. Experimentally, the Cu 94 Ge 6 catalyst exhibits an ethanol-to-ethylene ratio of ∼1.8, significantly higher than that of pure Cu (∼0.6). Comprehensive characterization, including in situ ATR-FTIR and quasi in situ XPS, reveals that the Ge-induced electronic modulation enhances the adsorption of COCHO/CH 2 CHO intermediates and promotes the presence of isolated interfacial water, which collectively facilitates ethanol formation. This study presents a viable strategy for regulating C 2+ product selectivity through solid-solution electronic engineering in Cu-based electrocatalysts.

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JOURNAL OF THE EUROPEAN CERAMIC SOCIETY · 2026 ·Vol. 46 ·期 9 ·118212 · IF 6.3

Synergistic enhancement of thermoelectric performance in n-type Sb2Te3 alloyed PbTe via I/Ge co-doping

Xinyu Wang,Ruipeng Wang,Jianli Jiang,Haining Meng,Haigang Hou,Jian Yang,Guiwu Liu,Guanjun Qiao

PbTe-based thermoelectric materials are promising for mid-temperature waste heat recovery, yet n-type PbTe underperforms its p-type counterpart. Herein, high-performance n-type PbTe is achieved through I/Ge co-doping and in-situ composite engineering with Sb 2 Te 3 prepared by melting combined spark plasma sintering. Sb 2 Te 3 alloying introduce in-situ formed Sb/Sb 2 Te 3 precipitates. Furthermore, iodine doping optimizes the carrier concentration to ∼3.4 × 10 19 cm –3 , boosting the room-temperature electrical conductivity to ∼1404 S cm −1 and yielding a high power factor of ∼17.4 μW cm −1 K −2 for the PbTe-Sb 2 Te 3 sample. Meanwhile, lattice thermal conductivity is synergistically suppressed to ∼0.37 W m –1 K –1 at 673 K through Ge-induced point defects/off-center anharmonicity and Sb/Sb 2 Te 3 precipitates. This synergistic strategy results in a peak ZT of ∼1.30 at 823 K and a high average ZT of ∼0.91 at 323–823 K. This work demonstrates that synergistic I/Ge co-doping and composite precipitation effectively enhance thermoelectric performance in n-type PbTe.

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Advanced Optical Materials · 2026 ·Vol. 14 ·期 34 ·e71686 · IF 7.2

Dynamic Lone Pair Expression-Driven Strong Light Emission in a Zero-Dimensional Ge(II)-Based Perovskite

Jijun Qian,Xiwen Liang,Zhiguo Nie,Weiwei Meng,Sirui Bao,Xiong Huang,Qichuan Hu,Yulan Huang,Run Xu,Bo Wu,Guofu Zhou,Mingzhu Long

Metal halide perovskites derive their remarkable optoelectronic properties from the combined effects of strong electron-phonon coupling, exciton localization, and the dynamic stereochemical activity of n s 2 lone pairs. However, Ge (II)-based perovskites typically exhibit static lone-pair expression (LPE) and pronounced octahedral distortion, attributed to the second-order Jahn-Teller effect, which leads to severe nonradiative recombination. Here, we demonstrate that incorporating 1-methylpiperazium (MPZ 2+ ), with bidentate coordination sites and balanced polarity, steric effect, and conformational flexibility, can effectively tune the organic-inorganic interactions in a newly synthesized Ge(II)-based zero-dimensional perovskite, (MPZ) 2 GeI 6 , with suppressed LPE in Ge(II) ground states and minimized octahedral distortion. The structural symmetry facilitates strong orbital overlap between Ge 2+ and I − , leading to increased electron-phonon coupling and high defect tolerance. Coupled with the enhanced quantum confinement of isolated 0D [GeI 6 ] octahedra, (MPZ) 2 GeI 6 exhibits a large Stokes shift of 216 nm and a record-high photoluminescence quantum yield of 19.1% among reported Ge 2+ -based perovskites. Additionally, it demonstrates remarkable resistance to moisture, maintaining structural integrity and photoluminescence even after absorbing 0.5 g of water per gram of material, attributable to the polarity of MPZ molecules that help stabilize water molecules. These findings offer new insights into the structural and optical modulation of Ge-based perovskites.

CAS / MDL: 109-01-3
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Materials Chemistry Frontiers · 2023 ·Vol. 7 ·期 17 ·3754-3761 · IF 7

Ultrahigh conductivity and non-trivial band structure in van der Waals Nb dichalcogenides with Ge intercalation

Xue Han,Zhaolong Liu,Zhongnan Guo,Xiaojing Feng,Yan Gao,Shifeng Jin,Wenxia Yuan

Chemical intercalation has great potential to realize exotic electrical properties in van der Waals materials. Here we report the Ge intercalation in layered Nb dichalcogenides NbX2 (X = Se and S), which can induce ultrahigh conductivity and novel transport properties. Using the chemical vapor transport method, single crystals of two intercalated materials, namely, Ge0.33NbS2 and Ge0.26NbSe2, were grown. Despite the similar structures with an edge-sharing NbX6 triangular prism, the intercalated Ge shows different configurations in these two compounds, which is ordered in sulfide but disordered in selenide. The measurement of transport properties demonstrated that both Ge0.33NbS2 and Ge0.26NbSe2 are metallic and interestingly the conductivity of Ge0.33NbS2 at 300 K reaches 6.83 × 104 S cm−1, which is higher than those of other metallic transition metal dichalcogenides and even comparable to that of the electrode material Pt. Ge0.33NbS2 also shows high carrier mobility (83.40 cm2 V−1 s−1 at 300 K) and unsaturated linear magnetoresistance, while negative magnetoresistance was observed in Ge0.26NbSe2 below 10 K. The first-principles calculations indicated that the ultrahigh conductivity in Ge0.33NbS2 is ascribed to the non-trivial topological bands near the Fermi surface. Our work highlights the effective regulation of transport properties of van der Waals materials via modulating the band structures by chemical intercalation.

研究领域: 凝聚态物理 · 材料科学 · 纳米电子学
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INORGANIC CHEMISTRY · 2015 · IF 4.762

Syntheses, Crystal Structures, Ion-Exchange, and Photocatalytic Properties of Two Amine-Directed Ge–Sb–S Compounds

Bo Zhang,Mei-Ling Feng,Hong-Hua Cui,Cheng-Feng Du,Xing-Hui Qi,Nan-Nan Shen,Xiao-Ying Huang

Among numerous heterometallic chalcogenidoantimonates, relatively a few amine-directed Ge–Sb–S compounds have been synthesized. Presented here are the solvothermal syntheses, crystal structures, and ion-exchange, optical, and photocatalytic properties of two novel amine-directed Ge–Sb–S compounds, namely, [CH3NH3]20Ge10Sb28S72·7H2O (1) and [(CH3CH2CH2)2NH2]3Ge3Sb5S15·0.5(C2H5OH) (2). The structure of 1 features an unprecedented two-dimensional Ge–Sb–S double-layer composed of two twofold rotational symmetry-related thick [Ge8Sb28S72]n28n– single layers adhered via vertex-sharing [GeS4] tetrahedra. Compound 2 features a unique [Ge3Sb5S15]n3n– slab perforated with large elliptic-like windows. Remarkably, compound 1 exhibited excellent Cs+ ion-exchange property despite the presence of excess competitive cations, such as Na+, K+, Mg2+, and Ca2+ ions. In addition, compound 1 displayed visible-light-driven photocatalytic activity for degradation of rhodamine B.

CAS / MDL: 74-89-5
研究领域: 材料化学 · 晶体学 · 环境科学
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JOURNAL OF POWER SOURCES · 2025 · IF 7.9

An oxygen-deficient Ge/GeO2/C anode for lithium ion batteries with enhanced reversible energy storage performance

Guanzheng Wang,Huazhi Lei,Zhong Liu,Zhentao Yuan,Lu Li,Zhaolin Zhan,Xiao Wang

Although GeO 2 exhibites a large theoretical capacity (2125 mAh g −1 ), its large volume change limits its wide application in anode materials. A novel oxygen-deficient and amorphous Ge/GeO 2 /C composite anode consisted of crystal Ge was synthesized in situ using hydrothermal methods and reductive sintering to improve the specific capacity and long life of GeO 2 -based anodes. The capacity of the Ge/GeO 2 /C anode is 1160 mAh g −1 at 0.2 A g −1 for 200 cycles. The reversible specific capacity is retained at 1004 mAh g −1 at A g −1 for 600 cycles, thereby showing excellent stability. The presence of rich oxygen vacancies and crystalline Ge can assist the reversible decomposition of amorphous GeO 2 to improve the ionic and electronic conductivity of the anode. In addition, a stable and uniform film thickness of ∼20 nm is formed at the Ge/GeO 2 /C electrode surfaces after down cycling 200 times, as observed by transmission electron microscopy. These excellent properties are due to the carbon composite, amorphous structure and high oxygen vacancy concentration of the anode and the synergistic effect by crystalline Ge.

CAS / MDL: 1336-21-6 14431-43-7
研究领域: 材料科学 · 能源存储
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RSC Advances · 2017 ·Vol. 7 ·期 47 ·29378-29385 · IF 3.108

BaCu2MIVQ4 (MIV = Si, Ge, and Sn; Q = S, Se): synthesis, crystal structures, optical performances and theoretical calculations

Leyan Nian,Junben Huang,Kui Wu,Zhi Su,Zhihua Yang,Shilie Pan

Five non-centrosymmetric (NCS) quaternary metal chalcogenides, BaCu2SiSe4, BaCu2GeS4, BaCu2GeSe4, BaCu2SnS4, and BaCu2SnSe4, were successfully synthesized by solid-state reaction in vacuum-sealed silica tubes. They crystallized in the three different space groups: Ama2 for BaCu2SnSe4, P3121 for BaCu2GeS4 and BaCu2GeSe4, and P3221 for BaCu2SiSe4 and BaCu2SnS4. Note that BaCu2GeS4 and BaCu2GeSe4 show the mirror symmetrical structures to those of BaCu2SiSe4 and BaCu2SnS4. In comparison with their structures, it can be found that the [CuSe4] units are connected together to form a two-dimensional (2D) layer structure in BaCu2SnSe4, which is different from the 3D framework structure formed by the interlinked [CuQ4] (Q = S and Se) units in other four title compounds. In addition, BaCu2SnSe4 exhibits only one type of tunnel structure with the isolated [BaSe8] units existing in each tunnel, which is also different from the other title compounds (two types of tunnels with the isolated [BaSe8] units and [BaSe6]n chains located). The interesting structural changes also indicate that slight change of cation size would result in different structure features, and future structure prediction should devote considerable attention to the different chalcogen atoms. Moreover, important optical properties (optical bandgap, infrared (IR) absorption edge, second harmonic generation (SHG) response) of the title compounds were systematically investigated. Among them, IR and Raman spectra indicate that all of them exhibit the wide IR absorption edges (∼22 μm). Powder SHG measurement shows that BaCu2SnS4 possesses good SHG response about 1.6 times that of benchmark AgGaS2 (AGS) at the particle size 55–88 μm. All results indicate that BaCu2SnS4 can be expected as a potential IR nonlinear optical (NLO) candidate. Theoretical calculation was also used to analyze the structure–property relationship and their electronic structures and origin of NLO effect were studied in detail.

研究领域: 材料科学 · 晶体学 · 光学
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ELECTROCHIMICA ACTA · 2018 · IF 5.116

Ge nanoparticles embedded in spherical ordered mesoporous carbon as anode material for high performance lithium ion batteries

Min Zhao,Dong-Lin Zhao,Xin-Yao Han,Hui-Xian Yang,Ya-Jing Duan,Xin-Min Tian

Germanium-based anode materials suffer from huge volume expansion during the lithium ion insertion/extraction process, along with particle agglomeration, resulting in electrodes destruction and batteries failure. Ge nanoparticles embedded in spherical ordered mesoporous carbon (S-OMC/Ge) composite could effectively alleviate the defects in the cycle, which provided a novel material with stable cycle performance, high capacity and good conductivity. The S-OMC/Ge composite maintained reversible capacities of 996 mAh·g −1 after 160 cycles at a current density of 100 mA g −1 and 530 mAh·g −1 at a high rate of 1 A g −1 , attributed to the synergistic effect between the support of spherical OMC and the high capacity provided by dispersed Ge particles.

研究领域: 材料科学 · 能源存储
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Nanoscale · 2019 ·Vol. 11 ·期 48 ·23116-23125 · IF 6.97

Synthesis of low-symmetry 2D Ge(1−x)SnxSe2 alloy flakes with anisotropic optical response and birefringence

Yijun Liu,Minghui Wu,Zhaoyang Sun,Shengxue Yang,Chunguang Hu,Li Huang,Wanfu Shen,Bin Wei,Zhongchang Wang,Shiqi Yang,Yu Ye,Yan Li,Chengbao Jiang

Low-symmetry two-dimensional (2D) materials with unique in-plane anisotropy can promote both fundamental science and practical applications in optics, optoelectronics, electronics, and polarization detection. As a member of 2D materials, doping/alloying material systems have gained great attention owing to the tunable bandgap and special properties. However, the in-plane anisotropic optical and electrical properties of these 2D alloy materials have rarely been reported. In this work, low-symmetry 2D Ge(1−x)SnxSe2 (x = 0–1.0) alloy flakes have been synthesized by chemical vapor deposition (CVD) with a bandgap varying from 1.55 eV (GeSe2, x = 0) to 1.90 eV (SnSe2, x = 1.0). Angle-resolved polarized Raman spectroscopy (ARPRS) is used to confirm the in-plane vibrational anisotropy, and azimuth-dependent reflectance difference microscopy (ADRDM) is applied to visualize the in-plane optical anisotropy. Polarization-dependent transmission spectroscopy (PDTS) is carried out to reflect the in-plane absorptional anisotropy and linear dichroism, and birefringence characteristics are also found in the subsequent studies. All of the results indicate the unique in-plane optical anisotropy and birefringence characteristics of the 2D Ge(1−x)SnxSe2 alloy flakes, providing new opportunities for polarization-controlled devices, optical wave plates, and polarizers.

研究领域: 材料科学 · 光学 · 物理化学
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ACS Nano · 2022 · IF 18.027

Enhanced Density of States Facilitates High Thermoelectric Performance in Solution-Grown Ge- and In-Codoped SnSe Nanoplates

Yaru Gong,Shihua Zhang,Yunxiang Hou,Shuang Li,Chong Wang,Wenjie Xiong,Qingtang Zhang,Xuefei Miao,Jizi Liu,Yang Cao,Di Li,Guang Chen,Guodong Tang

SnSe single crystals have gained great interest due to their excellent thermoelectric performance. However, polycrystalline SnSe is greatly desired due to facile processing, machinability, and scale-up application. Here, we report an outstanding high average ZT of 0.88 as well as a high peak ZT of 1.92 in solution-processed SnSe nanoplates. Nanosized boundaries formed by nanoplates and lattice strain created by lattice dislocations and stacking faults effectively scatter heat-carrying phonons, resulting in an ultralow lattice thermal conductivity of 0.19 W m–1 K–1 at 873 K. Ultraviolet photoelectron spectroscopy reveals that Ge and In incorporation produces an enhanced density of states in the electronic structure of SnSe, resulting in a large Seebeck coefficient. Ge and In codoping not only optimizes the Seebeck coefficient but also substantially increases the carrier concentration and electrical conductivity, helping to maintain a high power factor over a wide temperature range. Benefiting from an enhanced power factor and markedly reduced lattice thermal conductivity, high average ZT and peak ZT are achieved in Ge- and In-codoped SnSe nanoplates. This work achieves an ultrahigh average ZT of 0.88 in polycrystalline SnSe by adopting nontoxic element doping, potentially expanding its usefulness for various thermoelectric generator applications.

研究领域: 材料科学 · 热电学 · 纳米材料 · 能量转换
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