CERAMICS INTERNATIONAL
·
2022
·Vol. 48
·期 22
·33967-33975
·
IF 5.532
Ya-nan Li,Ping Wu,Shiping Zhang,Yili Pei,Jinguang Yang,Sen Chen,Li Wang
Adding nanoparticles is a method to regulate the performance of thermoelectric materials. Ca 3 Co 4 O 9 /x MoSi 2 (x = 0, 0.05, 0.10, 0.13, and 0.16) was synthesized by a wet chemical method combined with atmospheric pressure sintering. The XRD and SEM results reveal that there are no other reaction in the samples. The grain size of all samples decrease with increasing MoSi 2 content, and all presented a similar flake morphology. The influence of MoSi 2 on the thermoelectric performance of Ca 3 Co 4 O 9 is systematically analysed. The appropriate addition of nano-MoSi 2 particles can increase the carrier concentration and enhance conductivity of Ca 3 Co 4 O 9 . The electrical conductivity of Ca 3 Co 4 O 9 /0.05 MoSi 2 is 83.16 Scm −1 , which is 49.2% higher than that of Ca 3 Co 4 O 9 at 1080 K. The Seebeck coefficient of the Ca 3 Co 4 O 9 /0.16 MoSi 2 sample reaches 197.56 μVK −1 at 980 K, which is significantly better than that of previously reported samples prepared by the same method. Moreover, combined with the experimental results and the analysis of the effective medium theory model, the addition of MoSi 2 can effectively debase the thermal conductivity of Ca 3 Co 4 O 9 . The thermal conductivity of Ca 3 Co 4 O 9 /0.16 MoSi 2 (∼1.26 Wm −1 K −1 , 1080 K) samples decrease greatly, which is attributed to the influence of interfacial thermal resistance and pores in the Ca 3 Co 4 O 9 /MoSi 2 . The ZT value of the Ca 3 Co 4 O 9 /0.05 MoSi 2 sample increases by 44.4% compare with that of Ca 3 Co 4 O 9 and reaches 0.26 at 1080 K. These results demonstrate that adding an appropriate amount of MoSi 2 particles is one of the methods to enhance the thermoelectric performance of Ca 3 Co 4 O 9 ceramic samples.
研究领域:
材料科学
·
凝聚态物理
·
无机非金属材料
·
能源材料
·
热电转换
✓ 已验证
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2020
·
IF 8.758
Qinghui Jiang,Huishan Hu,Junyou Yang,Jiwu Xin,Sihui Li,Giuseppe Viola,Haixue Yan
SnTe has attracted considerable attention as an environmentally friendly thermoelectric material. The thermoelectric figure of merit ZT value is related to low thermal conductivity that can be successfully realized using fabrication of nanostructures. However, the practical realization of SnTe nanostructured composites is often limited by long reaction time, low yield, and aggregation of nanoparticles. Herein, a simple substitution reaction between Cu2Se and SnTe was adopted to realize Cu1.75Te-SnTe nanocomposites with unique all-scale hierarchical structures. On the atomic level, the substitution SeTe is introduced into the lattice via the reaction between Cu2Se and SnTe; on the nanoscopic level, Cu1.75Te nanoinclusions with 10 nm size are evenly distributed at the grain boundaries of SnTe with average grain size less than 1 μm; on the mesoscopic level, these SnTe grains stack up to larger particles (10–20 μm), which are further surrounded by Cu1.75Te grains with a predominant size of 1–2 μm. These hierarchical structures, together with additional SnTe stacking faults, can effectively scatter phonons with different wavelengths to reduce the lattice thermal conductivity. At 873 K, a thermal conductivity value of 0.49 W·m–1·K–1 was obtained in the SnTe nanocomposite sample with 0.057 Cu1.75Te molar content, which is 40% lower than that of the pristine SnTe. By using the same approach for scattering phonons across integrated length scales, a ZT value of 1.02 (∼80% enhancement, compared with that of the pristine SnTe) was achieved at 873 K for the sample of the SnTe nanocomposite with 0.034 Cu1.75Te molar content. This large increase in ZT values highlights the role of multiscale hierarchical architecture in controlling phonon scattering, offering a viable alternative to realize higher performance thermoelectric bulk materials.
研究领域:
材料科学
·
热电学
·
纳米技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
CERAMICS INTERNATIONAL
·
2024
·
IF 5.1
Qinghui Jiang,Hui Long,Xianwei Zeng,Bo Wang,Boyu Yang,Jitao Yi,Yubo Luo,Junyou Yang,Haitao Ye,Yong Liu
BiCuSeO, an oxide thermoelectric material with a superlattice structure, presents the advantages of affordability, low toxicity, and environmental friendliness . However, its intrinsic low electrical conductivity has impeded its possible applications. To address this challenge, we put tiny PbZr 0.52 Ti 0.48 O 3 (PZT) with varying weight percentages ( x = 0, 5, 7, 9, 11) into BiCuSeO (BCSO) to fabricate thermoelectric nanocomposites . Through the spark plasma sintering process, PZT particles underwent in-situ decomposition, generating nano-sized second phases such as PbO 2 , TiO 2 , and PbZrO 3 , which are homogenously distributed within BCSO matrix (validated by XRD and TEM). The introduced PbO 2 , TiO 2 , and PbZrO 3 second phases served a dual purpose: inhibiting the grain growth of BCSO and introducing additional nano-grain boundaries. This resulted in more effective phonon scattering sites, thereby reducing lattice thermal conductivity . Simultaneously, the Pb element derived from PZT decomposition was doped into the Bi site of the BCSO matrix, causing a reduction in the band gap of BCSO from 0.49 eV to 0.388 eV and a significant increase in carrier concentration. Consequently, this doping enhanced the electrical conductivity of BCSO-based composites, with the composite with 11 wt% PZT additive amount exhibiting a remarkable 318-fold increase, reaching 550 S/cm compared to pristine BCSO. Notably, the composite with 7 wt% PZT additive amount achieved an exceptionally low lattice thermal conductivity of 0.333 W m −1 K −1 at 823 K. Through the synergistic optimization of electrical and thermal transport properties, the BCSO-based composite with 7 wt% PZT additive amount obtained a ZT value of ∼0.9 at 873 K, representing a 2.45-fold increase compared to pristine BiCuSeO. This straightforward method presents a cost-effective and scalable approach to enhance the thermoelectric performance of various materials, opening new avenues for potential commercial applications.
研究领域:
材料科学
·
热电学
·
纳米技术
✓ 已验证
DOI
高影响因子
Materials Today Electronics
·
2024
·
IF 0
Guanzheng Luo,Wang Li,Yingchao Wei,Yao Dai,Wenjie Shu,Linyao Wu,Xin Li,Yubo Luo,Junyou Yang
Cu 3 InSnSe 5 is a newly discovered copper-based diamond-like thermoelectric semiconductor, whose thermoelectric performance can be further enhanced by the MnSe alloying herein. We observed the formation of MnSe 2 precipitates that effectively scattered low-frequency phonons, which significantly reduced the lattice thermal conductivity at mid-to-low temperatures. While a high amount of MnSe alloying led to the formation of MnSe 2 precipitates which enhanced the phonons scattering, a smaller MnSe content improved the power factor in a certain as well. Ultimately, our research achieved a peak ZT of 1.00 and an average ZT of 0.50 over the 300–773 K temperature range by 10 mol.% MnSe alloyed Cu 3 InSnSe 5 pseudo-binary solid solution, demonstrating the potential of MnSe alloying for optimizing the thermoelectric performance of copper-based diamond-like semiconductor materials.
研究领域:
材料科学
·
凝聚态物理
·
半导体物理
·
能源材料
·
热电转换
✓ 已验证
DOI
RSC Advances
·
2015
·Vol. 5
·期 85
·69878-69885
·
IF 3.84
Guang-Kun Ren,Jin-le Lan,Sajid Butt,Kyle J. Ventura,Yuan-Hua Lin,Ce-Wen Nan
BiCuSeO oxyselenides have been successfully fabricated by self-propagating high-temperature synthesis (SHS). Compared with the SHS process of binary or ternary alloys, thermal analysis indicates the ignition temperature of quaternary layered BiCuSeO oxyselenides approaches the second lower melting point of the compound. The ZT value of SHS-synthesized BiCuSeO is almost 1.5 times larger than that of the solid state reaction (SSR) product at 873 K. This is attributed to the existing amorphous region, nano-pores, and optimized grain size. Furthermore, with the partial substitution of Pb2+ for Bi3+, ZT was enhanced through the optimization of charge carrier concentration and band gap narrowing. This achieved a ZT of 0.91 at 873 K for Bi1−xPbxCuSeO (x = 0.04). Combining with the Debye–Callaway model analysis, the ultralow lattice thermal conductivity of BiCuSeO can potentially be derived from the synergistic effect of intrinsic point defects, efficient grain boundaries and some other mechanisms.
研究领域:
材料科学
·
凝聚态物理
·
无机非金属材料
·
能源材料
·
热电转换
✓ 已验证
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE
·
2021
·Vol. 56
·期 22
·12732-12739
·
IF 4.22
Li Yuping,Huo Haojie,Huang Hai,Guo Kai,Yang Xinxin,Xing Juanjuan,Luo Jun,Rao Guang-Hui,Zhao Jing-Tai
Layered oxygen-containing compound Bi 2 O 2 Se is a promising n-type thermoelectric material, favored by its considerably high Seebeck coefficient and low thermal conductivity. Significant preferred orientation along plane (110), identified in the hot-pressed sample, results in obvious anisotropy in the electrical and thermal transport properties. Nb substitution Bi in the insulating layer [Bi 2 O 2 ] 2+ can effectively increase the electron concentration (from 10 16 to 10 18 cm −3 ) by two orders of magnitude, while maintaining high mobility. Therefore, a larger power factor of 2.19 μW cm −1 K −2 has been obtained for Bi 1.94 Nb 0.06 O 2 Se at 823 K, which enlarges by three times in comparison with pristine Bi 2 O 2 Se (0.673 μW cm −1 K −2 ). Combined with the inherently low thermal conductivity, the ZT values of Bi 1.94 Nb 0.06 O 2 Se reach 0.195 at 823 K, corresponding to 325% enhancement. This study shows that the substitution of Nb for Bi is a promising way to optimize the thermoelectric properties of Bi 2 O 2 Se-based thermoelectric materials.
研究领域:
材料科学
·
热电学
·
固体物理学
✓ 已验证
DOI
高影响因子
ADVANCED MATERIALS
·
2022
·Vol. 34
·期 38
·2202949
·
IF 32.086
Pengfei Xu,Wei Zhao,Xixi Liu,Baohai Jia,Jiaqing He,Liangwei Fu,Biao Xu
Nanostructure engineering is a key strategy for tailoring properties in the fields of batteries, solar cells, thermoelectrics, and so on. Limited by grain coarsening, however, the nanostructure effect gradually degrades during the materials’ manufacturing and in-service period. Herein, a strategy of cleavage-fracture for grain shrinking is developed in a Pb 0.98 Sb 0.02 Te sample during sintering, and the grain size remains stable after repeated tests. Moreover, the initial grain boundary is filled by fractured slender grains and enriched by dislocations, evolving into a hierarchical grain-boundary structure. The lattice thermal conductivity ( k lat ) is greatly reduced to approach the amorphous limit. As a result, a record-high ZT value of ≈1.9 is obtained at 815 K in the n-type Pb 0.98 Sb 0.02 Te sample and a decent efficiency of 6.7% in thermoelectric device. This strategy for grain shrinking will shed light on the application of nanostructure engineering under high temperature and extreme conditions in other material systems.
研究领域:
材料科学
·
热电学
·
纳米技术
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2025
·
IF 6.3
Fenghao Yu,Chaoxin Qiu,Cong Xiao,Yanxin Du,Lin Lai,Wei Ren,Wei Li,Liting Jiang,Xiaohua Luo,Shengcan Ma
At present, Ag-based thermoelectric materials have received extensive attention and have demonstrated excellent performance in related device application. Among them, AgBiSe 2 is a lead-free thermoelectric material that exhibits significant n -type doping characteristics. It has been previously reported that R Cl 3 -doping ( R denotes the rare earth elements) has achieved excellent results in some n -type thermoelectric materials. However, there is still a lack of systematic research on the effect of R Cl 3 doping on AgBiSe 2 based materials. In this work, n -type AgBiSe 1.98 polycrystalline materials doped with CeCl 3 (0.5–2 mol%) are successfully synthesized by the melting method in combination with spark plasma sintering (SPS) technique. Compared with AgBiSe 2 , the CeCl 3 -doped AgBiSe 1.98 samples have achieved a significant increase in thermoelectric figure of merit ( ZT ) value, which should be attributed to the higher power factor ( PF = S 2 σ ) and inherently low thermal conductivity. Specifically, a large ZT max of ∼ 0.65 is achieved at 733 K in the 2 mol% CeCl 3 -doped AgBiSe 1.98 sample, which shows an increase of 41 %. This study demonstrates that CeCl 3 -doping, as a novel strategy that can improve simultaneously n H and m *, reveals excellent optimization effects in the thermoelectric performance regulation of AgBiSe 2 -based materials.
研究领域:
材料科学
·
热电材料
·
凝聚态物理
·
无机非金属材料
·
能源材料
✓ 已验证
产品关联
DOI
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2025
·
IF 13.2
Jiaman Wei,Wei Yu,Zhijian Li,Jiaxin Hu,Tonghui Wang,Yuan Yu,Xin Guo
The inherent cation disordering and wide bandgap of CuInTe 2 seriously impede carrier concentration optimization, constraining the enhancement of thermoelectric performance. In this work, the inherent cases were addressed by introducing Sb doping and high pressure. Cu Sb bonding was strengthened by incorporating Sb into Te sites, realizing cation ordering while supplying extra hole carriers. Furthermore, with bandgap narrowing induced by applying pressure, the carrier concentration was significantly increased to over ∼10 19 cm −3 , accompanied by optimizing the electronic structure. As a consequence, a high power factor of 1152.4 μWm −1 K −2 at 773 K was achieved. In addition, abundant defect structures were introduced due to Sb doping and external pressure, largely suppressing phonon transport and thus reducing the lattice thermal conductivity to 0.63 Wm −1 K −1 , which approaches the theoretical minimum. Ultimately, a high zT value of 1.14 at 773 K was achieved for CuInTe 1.995 Sb 0.005 prepared under 2.5 GPa. This study demonstrates the efficacy of high pressure and Sb doping in improving the thermoelectric performance of CuInTe 2 , and provides a feasible approach for optimizing cation ordering and band structure in thermoelectrics.
研究领域:
材料科学
·
热电学
·
固体物理
·
能量转换
·
无机化学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ELECTRONIC MATERIALS
·
2014
·Vol. 43
·期 6
·2435-2439
·
IF 1.675
Tan Qing,Li Jing-Feng
To study the possibility of SnS as an earth-abundant and environmentally friendly thermoelectric material, the electrical and thermal transport properties of bulk materials prepared by combining mechanical alloying and spark plasma sintering were investigated. It was revealed that SnS has potential as a good thermoelectric material, benefiting from its intrinsically low thermal conductivity below 1.0 W/m/K above 400 K and its high Seebeck coefficient over 500 μ V/K. Although the highest ZT value was 0.16 at 823 K in the pristine sample, further enhancement can be expected through chemical doping to increase the electrical conductivity. It was also revealed that changing the stoichiometric ratio and sintering temperature had less apparent influence on the microstructure and thermoelectric properties of SnS because redundant S in the powders decomposed during the sintering process.
研究领域:
材料科学
·
热电学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2013
·Vol. 24
·期 8
·3095-3100
·
IF 1.486
Gao Feng,Zhang Jing,Song Hongzhang,Qin Zhen,Yang Delin,Hu Xing
The influence of Fe doping on the lattice structure and thermoelectric properties of GdBaCo 2− x
Fe
x
O 5+ δ
( x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0) ceramics was studied from room temperature to 525 K. The results show that presence of Fe will increase both electrical resistivity and Seebeck coefficients of the samples. Due to the lattice misfit and carrier concentration reduction caused by Fe, the thermal conductivity of the sample decreases. The activation energy of conductivity is larger than that of thermopower calculated in the semiconductive region, which means that the conduction mechanism may be determined as a small polaron hopping model. The optimum Fe doping amount is x = 0.6, which results in a ZT value 0.02 at 373 K.
研究领域:
材料科学
·
凝聚态物理
·
功能陶瓷
·
热电材料
·
固态离子学
✓ 已验证
DOI
高影响因子
Journal of Materiomics
·
2025
·
IF 9.6
Jiang-Hu Yu,Yu Wang,Chong-Yu Wang,Hao Liang,Yi-Lin Liu,Ze-Yuan Yang,Yi-Xin Zhang,Jing Feng,Zhen-Hua Ge
The extensive utilization of thermoelectric (TE) conversion technology necessitates stricter performance requirements for bismuth telluride (Bi 2 Te 3 )-based commercial materials. Despite the numerous optimization methods available for Bi 2 Te 3 -based materials, each optimization method has a certain upper limitation, and combining multiple strategies can achieve the optimal thermoelectric figure of merit ( zT ). In this study, the thermoelectric properties of (Bi,Sb) 2 Te 3 materials are enhanced through the combined use of the heavy element Pb to regulate carrier concentration and the In element to optimize the band structure. Notably, indium (In) can suppress p-type antisite defects, which generate abundant Te vacancies, and help regulate the carrier concentration to its optimal level. This co-doping strategy achieves optimal carrier concentration, thereby enhancing the power factor (PF=4.57×10 3 μW⸱m –1 ⸱K –2 ), and generating abundant dislocations, the presence of the rich nano-second phase Sb 2 O 3 contributes to reduced lattice thermal conductivity. Consequently, a peak zT value of 1.41 at 323 K and a high average zT value of 1.23 between 300 K and 500 K are achieved. Additionally, two pairs of thermoelectric modules, composed of p-type (Bi 0.42 Sb 1.58 ) 0.994 (In, Pb) 0.006 Te 3 and zone-melted n-type Bi 2 Te 2.7 Se 0.3 , demonstrate a conversion efficiency of 7.3% at a temperature difference of 250 K. This underscores the promising potential of these thermoelectric modules in commercialization. Thus, this study demonstrates the feasibility of combining multiple strategies and is expected to provide a potential reference for other thermoelectric systems.
✓ 已验证
产品关联
DOI
高影响因子
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